WO2009084857A3 - Light emitting diode and method of fabricating the same - Google Patents

Light emitting diode and method of fabricating the same Download PDF

Info

Publication number
WO2009084857A3
WO2009084857A3 PCT/KR2008/007658 KR2008007658W WO2009084857A3 WO 2009084857 A3 WO2009084857 A3 WO 2009084857A3 KR 2008007658 W KR2008007658 W KR 2008007658W WO 2009084857 A3 WO2009084857 A3 WO 2009084857A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
fabricating
support substrate
same
Prior art date
Application number
PCT/KR2008/007658
Other languages
French (fr)
Other versions
WO2009084857A2 (en
Inventor
Won Cheol Seo
Chang Youn Kim
Yeo Jin Yoon
Original Assignee
Seoul Opto Device Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080131071A external-priority patent/KR20090072980A/en
Application filed by Seoul Opto Device Co., Ltd. filed Critical Seoul Opto Device Co., Ltd.
Priority to US12/811,047 priority Critical patent/US8395166B2/en
Priority to JP2010540577A priority patent/JP5425095B2/en
Publication of WO2009084857A2 publication Critical patent/WO2009084857A2/en
Publication of WO2009084857A3 publication Critical patent/WO2009084857A3/en
Priority to US13/368,122 priority patent/US8628983B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers includes an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
PCT/KR2008/007658 2007-12-28 2008-12-24 Light emitting diode and method of fabricating the same WO2009084857A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/811,047 US8395166B2 (en) 2007-12-28 2008-12-24 Light emitting diode and method of fabricating the same
JP2010540577A JP5425095B2 (en) 2007-12-28 2008-12-24 Manufacturing method of light emitting diode
US13/368,122 US8628983B2 (en) 2007-12-28 2012-02-07 Light emitting diode and method of fabricating the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20070140605 2007-12-28
KR10-2007-0140605 2007-12-28
KR1020080131071A KR20090072980A (en) 2007-12-28 2008-12-22 Light emitting diode and method of fabricating the same
KR10-2008-0131071 2008-12-22

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/811,047 A-371-Of-International US8395166B2 (en) 2007-12-28 2008-12-24 Light emitting diode and method of fabricating the same
US13/368,122 Division US8628983B2 (en) 2007-12-28 2012-02-07 Light emitting diode and method of fabricating the same

Publications (2)

Publication Number Publication Date
WO2009084857A2 WO2009084857A2 (en) 2009-07-09
WO2009084857A3 true WO2009084857A3 (en) 2009-10-08

Family

ID=40824880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/007658 WO2009084857A2 (en) 2007-12-28 2008-12-24 Light emitting diode and method of fabricating the same

Country Status (1)

Country Link
WO (1) WO2009084857A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5438534B2 (en) * 2010-01-29 2014-03-12 Ｄｏｗａエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
KR101055003B1 (en) * 2010-03-09 2011-08-05 엘지이노텍 주식회사 Light emitting device, light emitting device package, lighting system, and method for fabricating the light emitting device
KR101051326B1 (en) * 2010-04-23 2011-07-22 주식회사 세미콘라이트 Compound semiconductor light emitting device
JP5725927B2 (en) 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． High efficiency light emitting diode and method for manufacturing the same
CN101937951B (en) * 2010-08-11 2012-02-22 中国科学院半导体研究所 Method for corroding light-emitting diode transfer substrate with gallium nitride-based vertical structure
DE102011015725B4 (en) * 2011-03-31 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for separating a component assembly
JP2014220533A (en) * 2014-08-26 2014-11-20 株式会社東芝 Semiconductor light-emitting element and semiconductor light-emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
KR20050012729A (en) * 2002-04-09 2005-02-02 오리올 인코포레이티드 Method Of Fabricating Vertical Structure LEDs
US20060065905A1 (en) * 2002-09-30 2006-03-30 Dominik Eisert Semiconductor component and production method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050012729A (en) * 2002-04-09 2005-02-02 오리올 인코포레이티드 Method Of Fabricating Vertical Structure LEDs
US20060065905A1 (en) * 2002-09-30 2006-03-30 Dominik Eisert Semiconductor component and production method
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices

Also Published As

Publication number Publication date
WO2009084857A2 (en) 2009-07-09

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