JP2009123718A - Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ - Google Patents

Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ Download PDF

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JP2009123718A
JP2009123718A JP2007286691A JP2007286691A JP2009123718A JP 2009123718 A JP2009123718 A JP 2009123718A JP 2007286691 A JP2007286691 A JP 2007286691A JP 2007286691 A JP2007286691 A JP 2007286691A JP 2009123718 A JP2009123718 A JP 2009123718A
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Prior art keywords
layer
group iii
iii nitride
compound semiconductor
nitride compound
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JP2007286691A
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Japanese (ja)
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JP2009123718A5 (enExample
Inventor
Nobuaki Kaji
亘章 加治
Taisuke Yokoyama
泰典 横山
Hiromitsu Sakai
浩光 酒井
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP2007286691A priority Critical patent/JP2009123718A/ja
Priority to TW097101381A priority patent/TW200838000A/zh
Priority to KR1020097014525A priority patent/KR101151167B1/ko
Priority to PCT/JP2008/050336 priority patent/WO2008087930A1/ja
Priority to EP08703200.9A priority patent/EP2105973A4/en
Priority to US12/306,609 priority patent/US20090194784A1/en
Publication of JP2009123718A publication Critical patent/JP2009123718A/ja
Publication of JP2009123718A5 publication Critical patent/JP2009123718A5/ja
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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US10541514B2 (en) 2016-02-25 2020-01-21 Ngk Insulators, Ltd. Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device
JP2017220586A (ja) * 2016-06-08 2017-12-14 国立大学法人 東京大学 半導体発光素子
JP2022049679A (ja) * 2020-09-16 2022-03-29 エスピーティーエス テクノロジーズ リミティド 成膜方法

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