TW200707799A - Bonded intermediate substrate and method of making same - Google Patents

Bonded intermediate substrate and method of making same

Info

Publication number
TW200707799A
TW200707799A TW095114397A TW95114397A TW200707799A TW 200707799 A TW200707799 A TW 200707799A TW 095114397 A TW095114397 A TW 095114397A TW 95114397 A TW95114397 A TW 95114397A TW 200707799 A TW200707799 A TW 200707799A
Authority
TW
Taiwan
Prior art keywords
substrate
thin layer
intermediate substrate
handle
making same
Prior art date
Application number
TW095114397A
Other languages
English (en)
Chinese (zh)
Inventor
Thomas Henry Pinnington
James M Zahler
Young-Bae Park
Charles Tsai
Corinne Ladous
Harry A Atwater Jr
Sean Olson
Original Assignee
Aonex Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aonex Technologies Inc filed Critical Aonex Technologies Inc
Publication of TW200707799A publication Critical patent/TW200707799A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
TW095114397A 2005-04-21 2006-04-21 Bonded intermediate substrate and method of making same TW200707799A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US67336705P 2005-04-21 2005-04-21
US68282305P 2005-05-20 2005-05-20
US70035705P 2005-07-19 2005-07-19
US70388905P 2005-08-01 2005-08-01
US71141605P 2005-08-26 2005-08-26
US75130805P 2005-12-19 2005-12-19
US76249006P 2006-01-27 2006-01-27

Publications (1)

Publication Number Publication Date
TW200707799A true TW200707799A (en) 2007-02-16

Family

ID=37215279

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114397A TW200707799A (en) 2005-04-21 2006-04-21 Bonded intermediate substrate and method of making same

Country Status (4)

Country Link
US (1) US8101498B2 (cg-RX-API-DMAC7.html)
JP (1) JP5364368B2 (cg-RX-API-DMAC7.html)
TW (1) TW200707799A (cg-RX-API-DMAC7.html)
WO (1) WO2006116030A2 (cg-RX-API-DMAC7.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI486476B (zh) * 2011-02-28 2015-06-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI493746B (zh) * 2008-02-21 2015-07-21 日東電工股份有限公司 具有半透明陶瓷板之發光元件
US9397279B2 (en) 2013-12-27 2016-07-19 Industrial Technology Research Institute Electric conductive heat dissipation substrate
CN111741936A (zh) * 2018-12-21 2020-10-02 Ａｇｃ株式会社 层叠体和层叠体的制造方法
CN112968107A (zh) * 2020-08-26 2021-06-15 重庆康佳光电技术研究院有限公司 弱化结构的制作方法、微器件的转移方法
TWI883558B (zh) * 2023-09-27 2025-05-11 絜靜精微有限公司 晶種層植入之晶圓載板製造方法及其晶圓結構

Families Citing this family (255)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
WO2004077580A2 (en) * 2003-02-26 2004-09-10 Cree, Inc. White light source using emitting diode and phosphor and method of fabrication
JP2006525682A (ja) 2003-04-30 2006-11-09 クリー　インコーポレイテッド 高出力固体発光素子パッケージ
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
EP1759422B1 (en) 2004-06-04 2022-01-26 The Board Of Trustees Of The University Of Illinois Electrical device comprising printable semiconductor elements
US7799699B2 (en) * 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
JP5364368B2 (ja) 2005-04-21 2013-12-11 エイオーネックス・テクノロジーズ・インコーポレイテッド 基板の製造方法
WO2006130696A2 (en) * 2005-06-01 2006-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
CN101415864B (zh) * 2005-11-28 2014-01-08 晶体公司 具有减少缺陷的大的氮化铝晶体及其制造方法
US7641735B2 (en) 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
KR100661602B1 (ko) * 2005-12-09 2006-12-26 삼성전기주식회사 수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법
JP2009527071A (ja) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
EP2918708B1 (en) 2006-03-30 2019-10-30 Crystal Is, Inc. Method for annealing of aluminium nitride wafer
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US20100095882A1 (en) * 2008-10-16 2010-04-22 Tadao Hashimoto Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US8728234B2 (en) * 2008-06-04 2014-05-20 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
CN102800786B (zh) 2006-04-24 2015-09-16 克利公司 发光二极管和显示元件
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
KR100809209B1 (ko) * 2006-04-25 2008-02-29 삼성전기주식회사 비극성 ｍ면 질화물 반도체 제조방법
TWI336965B (en) * 2006-06-16 2011-02-01 High Power Optoelectronics Inc Semiconductor light emitting device and method of fabricating the same
WO2007149487A2 (en) * 2006-06-21 2007-12-27 The Regents Of The University Of California Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
KR100755656B1 (ko) * 2006-08-11 2007-09-04 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
KR100867518B1 (ko) * 2006-09-06 2008-11-07 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
JP4296195B2 (ja) * 2006-11-15 2009-07-15 シャープ株式会社 電界効果トランジスタ
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US20080194077A1 (en) * 2007-02-08 2008-08-14 National Central University Method of low temperature wafer bonding through Au/Ag diffusion
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
KR101335713B1 (ko) * 2007-02-28 2013-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 접합 기판의 제조방법 및 접합 기판
US20080217634A1 (en) * 2007-03-06 2008-09-11 Wen-Huang Liu Vertical light-emitting diode structure with omni-directional reflector
US20090085065A1 (en) * 2007-03-29 2009-04-02 The Regents Of The University Of California Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal
US7732301B1 (en) * 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
CN101295758B (zh) * 2007-04-29 2013-03-06 晶能光电（江西）有限公司 含有碳基衬底的铟镓铝氮发光器件以及其制造方法
JP4341693B2 (ja) * 2007-05-16 2009-10-07 ウシオ電機株式会社 Ｌｅｄ素子およびその製造方法
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7646025B1 (en) * 2007-05-31 2010-01-12 Chien-Min Sung Diamond LED devices and associated methods
US8309967B2 (en) 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
TWI353068B (en) * 2007-07-19 2011-11-21 Lite On Technology Corp Semiconductor light-emitting element and process f
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US7846753B2 (en) * 2007-08-10 2010-12-07 Hong Kong Applied Science And Technology Research Institute Vertical light emitting diode and method of making a vertical light emitting diode
US8222064B2 (en) 2007-08-10 2012-07-17 Hong Kong Applied Science and Technology Research Institute Company Limited Vertical light emitting diode device structure and method of fabricating the same
US8187900B2 (en) * 2007-08-10 2012-05-29 Hong Kong Applied Science and Technology Research Institute Company Limited Optimization of polishing stop design
JP2009049044A (ja) * 2007-08-13 2009-03-05 Sumitomo Electric Ind Ltd 半導体レーザを作製する方法
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
FR2920589B1 (fr) * 2007-09-04 2010-12-03 Soitec Silicon On Insulator "procede d'obtention d'un substrat hybride comprenant au moins une couche d'un materiau nitrure"
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
JP5452900B2 (ja) * 2007-09-21 2014-03-26 株式会社半導体エネルギー研究所 半導体膜付き基板の作製方法
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
JP2009099675A (ja) * 2007-10-15 2009-05-07 Showa Denko Kk 発光ダイオードの製造方法及び発光ダイオード、並びにランプ
JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
JP2011503847A (ja) * 2007-11-02 2011-01-27 ワコンダ テクノロジーズ， インコーポレイテッド 結晶質薄膜光起電力構造およびその形成方法
JP5156347B2 (ja) * 2007-11-21 2013-03-06 ローム株式会社 半導体発光素子およびその製造方法
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8093136B2 (en) * 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
EP2242588A4 (en) * 2008-01-15 2017-08-16 First Solar, Inc Plasma-treated photovoltaic devices
FR2926674B1 (fr) 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable
WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
EP2245218B1 (en) * 2008-02-25 2019-06-19 SixPoint Materials, Inc. Method for producing group iii nitride wafers and group iii nitride wafers
CN101965490B (zh) * 2008-03-05 2013-09-11 史泰克公司 用于流体的开关热电冷却的方法和设备
EP2269230A4 (en) 2008-03-08 2016-03-30 Crystal Solar Inc INTEGRATED METHOD AND SYSTEM FOR THE PRODUCTION OF MONOLITHIC PANELS OF CRYSTALLINE SOLAR CELLS
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
WO2009117062A2 (en) * 2008-03-19 2009-09-24 Sheetak, Inc. Metal-core thermoelectric cooling and power generation device
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
KR101438818B1 (ko) * 2008-04-01 2014-09-05 엘지이노텍 주식회사 발광다이오드 소자
DE102008038852B4 (de) * 2008-06-03 2024-02-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
EP3330413B1 (en) * 2008-06-04 2020-09-09 SixPoint Materials, Inc. Method of growing group iii nitride crystals using high-pressure vessel
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2009151642A1 (en) 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
TW201003981A (en) * 2008-07-14 2010-01-16 Advanced Optoelectronic Tech Substrate structure and method of removing the substrate structure
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
TWI495141B (zh) * 2008-08-01 2015-08-01 Epistar Corp 晶圓發光結構之形成方法及光源產生裝置
US8525200B2 (en) * 2008-08-18 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode with non-metallic reflector
CN102067337A (zh) * 2008-08-19 2011-05-18 晶能光电（江西）有限公司 具有硅胶保护层的半导体发光器件
EP2335293A1 (en) * 2008-09-04 2011-06-22 3M Innovative Properties Company Light source with improved monochromaticity
WO2010036602A1 (en) * 2008-09-26 2010-04-01 S.O.I.Tec Silicon On Insulator Technologies Method of forming a composite laser substrate
JP2010087218A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体からなる発光素子およびその製造方法
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
JP5646492B2 (ja) 2008-10-07 2014-12-24 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． 伸縮可能な集積回路およびセンサアレイを有する装置
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8410511B2 (en) * 2008-10-17 2013-04-02 Goldeneye, Inc. Methods for high temperature processing of epitaxial chips
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
WO2010060034A1 (en) * 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
WO2010088366A1 (en) 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US8955580B2 (en) 2009-08-14 2015-02-17 Wah Hong Industrial Corp. Use of a graphite heat-dissipation device including a plating metal layer
TW201035513A (en) * 2009-03-25 2010-10-01 Wah Hong Ind Corp Method for manufacturing heat dissipation interface device and product thereof
WO2010124059A2 (en) * 2009-04-24 2010-10-28 Wakonda Technologies, Inc. Crystalline thin-film photovoltaic structures and methods for forming the same
JP5597933B2 (ja) * 2009-05-01 2014-10-01 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板およびその製造方法
WO2010129718A2 (en) * 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
TWI573185B (zh) * 2009-05-12 2017-03-01 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
US20100309943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
JP5397042B2 (ja) * 2009-06-26 2014-01-22 富士通株式会社 半導体装置の製造方法
WO2011008280A1 (en) 2009-07-17 2011-01-20 Sheetak Inc. Heat pipes and thermoelectric cooling devices
US8436362B2 (en) 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
KR101113692B1 (ko) 2009-09-17 2012-02-27 한국과학기술원 태양전지 제조방법 및 이에 의하여 제조된 태양전지
KR20120094477A (ko) 2009-09-25 2012-08-24 크리, 인코포레이티드 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
JP5678092B2 (ja) * 2009-12-15 2015-02-25 ソイテック 基板を再利用する方法
WO2011084450A1 (en) 2009-12-16 2011-07-14 The Board Of Trustees Of The University Of Illinois Electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
US8648387B2 (en) * 2009-12-30 2014-02-11 Industrial Technology Research Institute Nitride semiconductor template and method of manufacturing the same
KR101149677B1 (ko) 2010-01-20 2012-07-11 주식회사 엘지실트론 플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자, 태양전지, ｌｅｄ
KR101055003B1 (ko) * 2010-03-09 2011-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지, 조명 시스템, 및 발광 소자 제조방법
KR101724273B1 (ko) 2010-03-17 2017-04-07 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 생체흡수성 기판 상 이식가능한 바이오의료 장치
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
DE102010017155B4 (de) * 2010-05-31 2012-01-26 Q-Cells Se Solarzelle
US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
EP2588651B1 (en) 2010-06-30 2020-01-08 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2012020676A1 (ja) * 2010-08-10 2012-02-16 株式会社 東芝 ＧａＮベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたＧａＮベース半導体の製造方法
JP5593163B2 (ja) * 2010-08-18 2014-09-17 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
FR2963982B1 (fr) * 2010-08-20 2012-09-28 Soitec Silicon On Insulator Procede de collage a basse temperature
US9356101B2 (en) * 2010-09-27 2016-05-31 Kabushiki Kaisha Toshiba Polycrystalline aluminum nitride base material for crystal growth of GaN-base semiconductor and method for manufacturing GaN-base semiconductor using the same
CN101964385B (zh) * 2010-10-28 2012-08-29 映瑞光电科技(上海)有限公司 发光二极管及其形成方法
JP5938871B2 (ja) * 2010-11-15 2016-06-22 住友電気工業株式会社 ＧａＮ系膜の製造方法
US20120118222A1 (en) * 2010-11-15 2012-05-17 Sumitomo Electric Industries, Ltd. METHOD OF MANUFACTURING GaN-BASED FILM
CN103238223B (zh) * 2010-12-08 2017-03-01 日亚化学工业株式会社 氮化物系半导体发光元件
US8766274B2 (en) 2010-12-14 2014-07-01 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
JP2012178548A (ja) * 2011-02-03 2012-09-13 Soytec 層移転用金属キャリア及びその形成方法
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US9184228B2 (en) 2011-03-07 2015-11-10 Sumitomo Electric Industries, Ltd. Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
JP2012230969A (ja) * 2011-04-25 2012-11-22 Sumitomo Electric Ind Ltd ＧａＮ系半導体デバイスの製造方法
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
EP2712491B1 (en) 2011-05-27 2019-12-04 Mc10, Inc. Flexible electronic structure
US20120309172A1 (en) * 2011-05-31 2012-12-06 Epowersoft, Inc. Epitaxial Lift-Off and Wafer Reuse
EP2713863B1 (en) 2011-06-03 2020-01-15 The Board of Trustees of the University of Illionis Conformable actively multiplexed high-density surface electrode array for brain interfacing
FR2977073B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement
WO2013008556A1 (ja) 2011-07-12 2013-01-17 丸文株式会社 発光素子及びその製造方法
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
ITMI20111559A1 (it) * 2011-08-30 2013-03-01 St Microelectronics Srl Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione
US9269858B2 (en) 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
WO2013049614A1 (en) * 2011-09-30 2013-04-04 Microlink Devices, Inc. Light emitting diode fabricated by epitaxial lift-off
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US9691873B2 (en) 2011-12-01 2017-06-27 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
WO2013134432A1 (en) * 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
WO2013132332A1 (en) * 2012-03-09 2013-09-12 Soitec Methods for forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods
FR2988219B1 (fr) * 2012-03-16 2015-03-13 Soitec Silicon On Insulator Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes
US8916483B2 (en) 2012-03-09 2014-12-23 Soitec Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
CN103305908A (zh) * 2012-03-14 2013-09-18 东莞市中镓半导体科技有限公司 一种用于GaN生长的复合衬底
KR20150004819A (ko) 2012-03-30 2015-01-13 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 표면에 상응하는 부속체 장착가능한 전자 장치
US20130264577A1 (en) * 2012-04-07 2013-10-10 Axlen, Inc. High flux high brightness led lighting devices
US9257339B2 (en) * 2012-05-04 2016-02-09 Silicon Genesis Corporation Techniques for forming optoelectronic devices
US20130328098A1 (en) * 2012-05-15 2013-12-12 High Power Opto. Inc. Buffer layer structure for light-emitting diode
WO2014015458A1 (zh) * 2012-07-23 2014-01-30 东莞市中镓半导体科技有限公司 一种带有防止金属扩散保护层的复合衬底
JP5792694B2 (ja) * 2012-08-14 2015-10-14 株式会社東芝 半導体発光素子
US8735219B2 (en) * 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
TWI588955B (zh) * 2012-09-24 2017-06-21 索泰克公司 使用多重底材形成iii-v族半導體結構之方法及應用此等方法所製作之半導體元件
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9029238B2 (en) 2012-10-11 2015-05-12 International Business Machines Corporation Advanced handler wafer bonding and debonding
EP2912685B1 (en) * 2012-10-26 2020-04-08 RFHIC Corporation Semiconductor devices with improved reliability and operating life and methods of manufacturing the same
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
FR3001225B1 (fr) * 2013-01-22 2016-01-22 Commissariat Energie Atomique Procede de fabrication d’une structure par collage direct
KR102077742B1 (ko) * 2013-02-27 2020-02-14 삼성전자주식회사 반도체 요소 전사 방법
CN108511567A (zh) 2013-03-15 2018-09-07 晶体公司 与赝配电子和光电器件的平面接触
FR3003692B1 (fr) * 2013-03-25 2015-04-10 Commissariat Energie Atomique Procede de fabrication d’une structure a multijonctions pour cellule photovoltaique
JP2014192272A (ja) * 2013-03-27 2014-10-06 Takamatsu Mekki:Kk Ｌｅｄ用のメタル基板
US9650723B1 (en) * 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US9105798B2 (en) * 2013-05-14 2015-08-11 Sun Harmonics, Ltd Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9876081B2 (en) * 2013-07-16 2018-01-23 The United States Of America, As Represented By The Secretary Of The Navy Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
JP5765865B2 (ja) 2013-07-17 2015-08-19 丸文株式会社 半導体発光素子及びフォトニック結晶周期構造のパラメータ計算方法
US9064789B2 (en) 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
US20150048301A1 (en) * 2013-08-19 2015-02-19 Micron Technology, Inc. Engineered substrates having mechanically weak structures and associated systems and methods
US9230847B2 (en) * 2013-10-01 2016-01-05 Micron Technology, Inc. Engineered substrate assemblies with thermally opaque materials, and associated systems, devices, and methods
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
US10361531B2 (en) * 2014-02-25 2019-07-23 Philips Photonics Gmbh Light emitting semiconductor devices with getter layer
CN105934833B (zh) * 2014-03-06 2017-09-15 丸文株式会社 深紫外led及其制造方法
JP6487940B2 (ja) * 2014-11-27 2019-03-20 国立研究開発法人産業技術総合研究所 半導体パッケージ及びその製造方法
KR101848034B1 (ko) 2015-01-16 2018-04-11 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
CA2975261C (en) * 2015-03-10 2019-07-30 Halliburton Energy Services, Inc. Polycrystalline diamond compacts and methods of manufacture
JP2018524677A (ja) 2015-06-01 2018-08-30 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 無線電力及び近距離無線通信機能を備えた小型電子システム
MX2017015587A (es) 2015-06-01 2018-08-23 Univ Illinois Metodo alternativo para sensor uv.
US9859458B2 (en) * 2015-06-19 2018-01-02 QMAT, Inc. Bond and release layer transfer process
KR102056414B1 (ko) 2015-09-03 2020-01-22 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
US9997391B2 (en) * 2015-10-19 2018-06-12 QROMIS, Inc. Lift off process for chip scale package solid state devices on engineered substrate
US9954065B2 (en) * 2015-11-09 2018-04-24 Infineon Technologies Ag Method of forming a semiconductor device and semiconductor device
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
FR3047350B1 (fr) 2016-02-03 2018-03-09 Soitec Substrat avance a miroir integre
JP6569802B2 (ja) * 2016-03-28 2019-09-04 株式会社ニコン 基板貼り合わせ装置および基板貼り合わせ方法
EP3249701B1 (en) * 2016-03-30 2020-07-08 Marubun Corporation Deep ultraviolet led and production method therefor
US10297445B2 (en) * 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
TWI795293B (zh) 2016-06-24 2023-03-01 美商克若密斯股份有限公司 工程基板結構
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
KR102403038B1 (ko) * 2016-08-23 2022-05-27 큐로미스, 인크 가공된 기판과 통합된 전자 전력 디바이스
US10438838B2 (en) * 2016-09-01 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and related method
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
CN110494987B (zh) * 2017-04-24 2022-03-01 苏州晶湛半导体有限公司 一种半导体结构和制备半导体结构的方法
JP6912716B2 (ja) * 2017-08-10 2021-08-04 富士通株式会社 半導体装置及びその製造方法
DE102017123154B4 (de) * 2017-10-05 2025-07-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN107742606B (zh) * 2017-10-30 2024-04-02 桂林电子科技大学 一种键合晶圆的结构及其制备方法
WO2019146737A1 (ja) 2018-01-26 2019-08-01 丸文株式会社 深紫外ｌｅｄ及びその製造方法
KR102131619B1 (ko) * 2018-06-12 2020-07-08 한국과학기술연구원 인화계 기판의 결정결함을 방지하기 위해 박막층을 형성하는 방법
WO2020010056A1 (en) 2018-07-03 2020-01-09 Invensas Bonding Technologies, Inc. Techniques for joining dissimilar materials in microelectronics
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
JP7326759B2 (ja) * 2019-02-06 2023-08-16 三菱ケミカル株式会社 ＧａＮ単結晶製造方法
FR3094559B1 (fr) * 2019-03-29 2024-06-21 Soitec Silicon On Insulator Procédé de transfert de paves d’un substrat donneur sur un substrat receveur
US10727216B1 (en) 2019-05-10 2020-07-28 Sandisk Technologies Llc Method for removing a bulk substrate from a bonded assembly of wafers
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
EP3989263A4 (en) * 2019-06-21 2022-06-29 Mitsubishi Electric Corporation Method for manufacturing composite substrate, and composite substrate
US11569398B2 (en) 2019-07-15 2023-01-31 SLT Technologies, Inc Power photodiode structures and devices
US11444216B2 (en) 2019-07-15 2022-09-13 Slt Technologies, Inc. Power photodiode structures, methods of making, and methods of use
US11575055B2 (en) 2019-07-15 2023-02-07 SLT Technologies, Inc Methods for coupling of optical fibers to a power photodiode
US10910272B1 (en) 2019-10-22 2021-02-02 Sandisk Technologies Llc Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same
CN114929947A (zh) * 2020-01-16 2022-08-19 Slt科技公司 高质量第iii族金属氮化物晶种及其制备方法
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11705322B2 (en) 2020-02-11 2023-07-18 Slt Technologies, Inc. Group III nitride substrate, method of making, and method of use
KR20230003471A (ko) 2020-03-19 2023-01-06 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 직접 결합된 구조체들을 위한 치수 보상 제어
EP4136685A4 (en) 2020-04-14 2024-04-10 Sheetak, Inc. APPARATUS, SYSTEM AND METHOD FOR HARVESTING THERMOELECTRIC ENERGY
KR20230017249A (ko) * 2020-05-29 2023-02-03 더 거번먼트 오브 더 유나이티드 스테이츠 오브 아메리카, 에즈 레프리젠티드 바이 더 세크러테리 오브 더 네이비 임의 기판으로의 대면적 iii족 질화물 반도체 물질 및 디바이스의 전사
JP2021195299A (ja) * 2020-06-09 2021-12-27 信越化学工業株式会社 Ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
WO2022027536A1 (en) * 2020-08-07 2022-02-10 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and fabrication method thereof
JP7585794B2 (ja) * 2021-01-07 2024-11-19 三菱電機株式会社 半導体装置
CN112750689A (zh) * 2021-01-18 2021-05-04 西安电子科技大学 镓极性面氮化镓材料及同质外延生长方法
US11855040B2 (en) * 2021-05-12 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implantation with annealing for substrate cutting
KR20230000950A (ko) * 2021-06-25 2023-01-03 삼성전자주식회사 발광 소자 및 이를 포함하는 디스플레이 장치
CN113725325A (zh) * 2021-07-30 2021-11-30 苏州光舵微纳科技股份有限公司 一种图形化蓝宝石复合衬底结构及其制备方法
TWI785763B (zh) * 2021-08-27 2022-12-01 合晶科技股份有限公司 複合基板及其製造方法
CN115188656B (zh) * 2022-06-10 2025-10-03 华南理工大学 一种单片集成材料及其制备方法
EP4620033A1 (en) * 2022-11-22 2025-09-24 Psiquantum, Corp. Method of removing a handle substrate from a solid-state die
CN116246951B (zh) * 2023-01-18 2025-12-30 浙江芯科半导体有限公司 一种从生长基板上剥离GaN外延层的方法
TWI878102B (zh) * 2024-04-24 2025-03-21 光鋐科技股份有限公司 發光二極體及其製造方法

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217564A (en) 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
NZ199835A (en) 1981-03-05 1984-03-30 Mobil Oil Corp Catalytic conversion of methanol dimethyl ether or a mixture thereof to ethylene
FR2504522A1 (fr) 1981-04-24 1982-10-29 Inst Francais Du Petrole Procede de purification d'une coupe c4 et/ou c5 d'hydrocarbures renfermant de l'eau et du dimethylether comme impuretes
US4499327A (en) 1982-10-04 1985-02-12 Union Carbide Corporation Production of light olefins
US5013681A (en) 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
JPH03270220A (ja) 1990-03-20 1991-12-02 Fujitsu Ltd バルク結晶成長用種結晶の作製方法
US6067062A (en) 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
US5090977A (en) 1990-11-13 1992-02-25 Exxon Chemical Patents Inc. Sequence for separating propylene from cracked gases
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5231047A (en) 1991-12-19 1993-07-27 Energy Conversion Devices, Inc. High quality photovoltaic semiconductor material and laser ablation method of fabrication same
FR2697835B1 (fr) 1992-11-06 1995-01-27 Inst Francais Du Petrole Procédé et dispositif de déshydrogénation catalytique d'une charge paraffinique C2+ comprenant des moyens pour inhiber l'eau dans l'effluent.
US5336841A (en) 1993-04-05 1994-08-09 Chemical Research & Licensing Company Oxygenate removal in MTBE process
FR2711986B1 (fr) 1993-11-05 1996-02-02 Inst Francais Du Petrole Procédé de séparation des composés oxygénés d'hydrocarbures, combinant une distillation et une perméation et son utilisation en éthérification.
US5391257A (en) 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
US5641381A (en) 1995-03-27 1997-06-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preferentially etched epitaxial liftoff of InP material
DE19516487C1 (de) 1995-05-05 1996-07-25 Fraunhofer Ges Forschung Verfahren zur vertikalen Integration mikroelektronischer Systeme
FR2747506B1 (fr) 1996-04-11 1998-05-15 Commissariat Energie Atomique Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques
FR2748850B1 (fr) 1996-05-15 1998-07-24 Commissariat Energie Atomique Procede de realisation d'un film mince de materiau solide et applications de ce procede
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5710057A (en) 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
US5955749A (en) 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
CA2233096C (en) 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrate and production method thereof
US6048411A (en) 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US5877070A (en) 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5914433A (en) 1997-07-22 1999-06-22 Uop Lll Process for producing polymer grade olefins
FR2767416B1 (fr) 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
JPH1167952A (ja) * 1997-08-15 1999-03-09 Sony Corp 窒化アルミニウム基板の製造方法
US5882987A (en) 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2774510B1 (fr) 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
US6130780A (en) 1998-02-19 2000-10-10 Massachusetts Institute Of Technology High omnidirectional reflector
US6121504A (en) 1998-04-29 2000-09-19 Exxon Chemical Patents Inc. Process for converting oxygenates to olefins with direct product quenching for heat recovery
JP3525061B2 (ja) 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6346458B1 (en) 1998-12-31 2002-02-12 Robert W. Bower Transposed split of ion cut materials
US6328796B1 (en) 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
JP3619393B2 (ja) * 1999-06-29 2005-02-09 京セラ株式会社 光半導体素子収納用パッケージ
FR2795866B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue
FR2795865B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'un film mince utilisant une mise sous pression
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
US6242324B1 (en) 1999-08-10 2001-06-05 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating singe crystal materials over CMOS devices
JP4414535B2 (ja) 2000-01-13 2010-02-10 進 野田 半導体装置の製造方法
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
JP3680677B2 (ja) * 2000-02-08 2005-08-10 セイコーエプソン株式会社 半導体素子製造装置および半導体素子の製造方法
JP4064592B2 (ja) 2000-02-14 2008-03-19 シャープ株式会社 光電変換装置
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
FR2810448B1 (fr) 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2840731B3 (fr) 2002-06-11 2004-07-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
US6497763B2 (en) 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
US20050026432A1 (en) 2001-04-17 2005-02-03 Atwater Harry A. Wafer bonded epitaxial templates for silicon heterostructures
US7238622B2 (en) 2001-04-17 2007-07-03 California Institute Of Technology Wafer bonded virtual substrate and method for forming the same
CA2482258A1 (en) 2001-04-17 2002-10-24 California Institute Of Technology A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
JP3699917B2 (ja) * 2001-09-19 2005-09-28 株式会社東芝 半導体素子及びその製造方法
US20030064535A1 (en) * 2001-09-28 2003-04-03 Kub Francis J. Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
FR2834123B1 (fr) 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
JP2003192442A (ja) * 2001-12-26 2003-07-09 Toshiba Corp 窒化アルミニウム基板、薄膜付き窒化アルミニウム基板およびこれからなるレーザー発光素子用サブマウント材
AU2003202858A1 (en) 2002-01-02 2003-07-24 Reveo, Inc. Photovoltaic cell and method of manufacture of photovoltaic cells
FR2835097B1 (fr) 2002-01-23 2005-10-14 Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil
JP2003273469A (ja) * 2002-03-15 2003-09-26 Nec Corp 窒化ガリウム系半導体素子及びその製造方法
KR100476901B1 (ko) 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법
JP2004071657A (ja) * 2002-08-01 2004-03-04 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体素子の製造方法
US6989314B2 (en) 2003-02-12 2006-01-24 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure and method of making same
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
DE60336543D1 (de) 2003-05-27 2011-05-12 Soitec Silicon On Insulator Verfahren zur Herstellung einer heteroepitaktischen Mikrostruktur
FR2857982B1 (fr) * 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7344903B2 (en) 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7358586B2 (en) 2004-09-28 2008-04-15 International Business Machines Corporation Silicon-on-insulator wafer having reentrant shape dielectric trenches
EP1681712A1 (en) 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
US7804100B2 (en) 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US7388278B2 (en) 2005-03-24 2008-06-17 International Business Machines Corporation High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods
JP5364368B2 (ja) 2005-04-21 2013-12-11 エイオーネックス・テクノロジーズ・インコーポレイテッド 基板の製造方法
DE102006007293B4 (de) 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493746B (zh) * 2008-02-21 2015-07-21 日東電工股份有限公司 具有半透明陶瓷板之發光元件
TWI486476B (zh) * 2011-02-28 2015-06-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
US9397279B2 (en) 2013-12-27 2016-07-19 Industrial Technology Research Institute Electric conductive heat dissipation substrate
CN111741936A (zh) * 2018-12-21 2020-10-02 Ａｇｃ株式会社 层叠体和层叠体的制造方法
CN112968107A (zh) * 2020-08-26 2021-06-15 重庆康佳光电技术研究院有限公司 弱化结构的制作方法、微器件的转移方法
CN112968107B (zh) * 2020-08-26 2022-07-26 重庆康佳光电技术研究院有限公司 弱化结构的制作方法、微器件的转移方法
TWI883558B (zh) * 2023-09-27 2025-05-11 絜靜精微有限公司 晶種層植入之晶圓載板製造方法及其晶圓結構

Also Published As

Publication number Publication date
JP5364368B2 (ja) 2013-12-11
US20060255341A1 (en) 2006-11-16
JP2008538658A (ja) 2008-10-30
US8101498B2 (en) 2012-01-24
WO2006116030A3 (en) 2009-04-23
WO2006116030A2 (en) 2006-11-02

Similar Documents

Publication Publication Date Title
TW200707799A (en) Bonded intermediate substrate and method of making same
TW200721452A (en) Novel method for intgegrating silicon CMOS and ALGaN/GaN wideband amplifiers on engineered substrates
WO2010151857A3 (en) Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
SG150571A1 (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
WO2009108733A3 (en) Current-injecting/tunneling light-emitting device and method
TW200518197A (en) Substrate for nitride semiconductor growth
TW200802985A (en) Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same
WO2011025290A3 (ko) 경사진 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
EP1245702A3 (en) Process for producing a gallium nitride crystal substrate
TW200729343A (en) Method for fabricating controlled stress silicon nitride films
WO2007002028A3 (en) Layer growth using metal film and/or islands
EP2175494A3 (en) Compound semiconductor device and manufacturing method of the same
WO2006127227A3 (en) Gallium nitride based structures including substrates and manufacturing methods thereof
TW200723521A (en) Metal oxide semiconductor devices and film structures and methods
TW200633022A (en) Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
EP2605269A3 (en) Composite Wafer for Fabrication of Semiconductor Devices
TW200518198A (en) Method for fabricating GaN-based nitride layer
WO2009136718A3 (ko) 반도체 소자 및 그 제조방법
DE602007012367D1 (cg-RX-API-DMAC7.html)
EP2696365A3 (en) Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
MY147005A (en) Method for bonding a semiconductor substrate to a metal subtrate
WO2011084269A3 (en) Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates
DE602007010978D1 (cg-RX-API-DMAC7.html)
WO2007019277A3 (en) Method of forming semiconductor layers on handle substrates
EP2096153A3 (en) Adhesive sheet for grinding back surface of semiconductor wafer and method for grinding back surface of semiconductor wafer using the same