CN112750689A - 镓极性面氮化镓材料及同质外延生长方法 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 90
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 90
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 67
- 239000000463 material Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000007704 transition Effects 0.000 claims abstract description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
本发明公开了一种镓极性面氮化镓材料及同质外延生长方法，主要解决现有镓极性面氮化镓材料位错密度高、表面形貌差、背景载流子浓度高、生长工艺控制难度大和一致性差的问题。其材料结构，自下而上包括衬底(1)、过渡层(2)、氮化镓外延层(3)，其中过渡层采用InAlN或ScAlN或YAlN，衬底采用镓极性c面氮化镓单晶衬底。其制作步骤为：在衬底基片上，利用分子束外延方法生长厚度为1nm～10nm的过渡层；保持反应室温度、氮气流量和氮气射频源功率不变，在过渡层上生长氮化镓外延层。本发明材料结晶质量高、表面形貌光滑、背景载流子浓度低、生长工艺简单且一致性高，可用于制作高频微波功率器件和高速电力电子开关器件。
Description
技术领域
本发明属于半导体材料生长领域，特别涉及一种镓极性面氮化镓半导体材料，可用于制作高频微波功率器件和高速电力电子开关器件。
背景技术
作为第三代宽禁带半导体材料的典型代表，氮化镓材料具有宽禁带、高饱和电子速度、高击穿场强、高热导率、抗辐照等优越性能，在高频微波功率器件和高速电力电子开关器件中具有应用潜力。氮化镓材料和更宽禁带的InAlGaN材料形成的异质结，在其界面具有高载流子密度和高迁移率的二维电子气，是高电子迁移率晶体管的基本材料结构。经过三十年的发展，氮化镓材料无论在材料生长技术还是器件工艺方面都取得了非常大的进展，在5G通信和新能源汽车中得到了商业化应用。
目前，试验研究和市场商用的氮化镓材料基本上基于镓极性面氮化镓材料，这是由于镓极性面氮化镓材料生长技术成熟，工艺简单。但这些镓极性面氮化镓材料都是在碳化硅等衬底上采用金属有机物化学气相淀积技术或分子束外延技术异质外延生长获得的。氮化镓材料可通过异质外延生长或同质外延生长，异质外延生长的氮化镓材料中存在由晶格失配和热膨胀系数失配导致的高密度位错缺陷，这些缺陷常作为陷阱中心俘获电子引起器件电流崩塌，同时位错作为漏电通道降低器件击穿电压。常规异质外延生长的镓极性面氮化镓材料结构，如图1所示。其自下而上包括衬底、成核层、镓极性面氮化镓材料。该材料存在以下缺点：
1.异质外延镓极性面氮化镓材料需要采用成核层结构，但成核层结构容易形成横向漏电通道，降低器件击穿电压，且其生长条件需要精准调控，生长重复性差，工艺控制难度高；
2.异质外延镓极性面氮化镓材料中存在高密度位错缺陷，会使材料表面形貌粗糙，形成坑状缺陷和表面漏电通道，降低器件击穿电压；
3.异质外延镓极性面氮化镓材料中的位错易俘获电子，导致器件电流崩塌现象；
4.异质外延镓极性面氮化镓材料中，成核层和镓极性面氮化镓材料生长参数不同，需要改变生长温度和切换气流，生长过程需要短暂停顿和间隔。
发明内容
本发明目的在于针对上述已有技术的缺点，提出一种镓极性面氮化镓材料及同质外延生长方法，以提高镓极性面氮化镓材料晶体质量和表面形貌，降低材料生长工艺控制难度，提高工艺一致性和重复性，降低同质外延镓极性面氮化镓材料中非故意掺杂背景载流子浓度。
为实现上述目的，本发明的技术方案如下：
1、一种镓极性面氮化镓材料，包括衬底(1)和氮化镓外延层(3)，其特征在于：
所述氮化镓外延层(3)与衬底(1)之间设有过渡层(2)，该过渡层采用InAlN或ScAlN或YAlN，其厚度为1nm～10nm；
所述衬底(1)采用镓极性c面氮化镓单晶。
2、一种同质外延生长镓极性面氮化镓材料的方法，其特征在于，包括如下步骤：
1)选用镓极性c面氮化镓单晶作为衬底；
2)将衬底基片置于反应室中，在衬底基片上利用分子束外延法，在温度为660℃～700℃，氮气流量为2.3sccm，金属束流的平衡蒸汽压为1.5×10-8Torr～1.8×10-7Torr，氮气射频源功率为375W的工艺条件下，生长1nm～10nm的过渡层；
3)保持反应室温度、氮气流量和氮气射频源功率不变，设置镓束流平衡蒸气压为6.2×10-7Torr～7.6×10-7Torr，采用分子束外延法，在过渡层上生长氮化镓外延层，完成镓极性面氮化镓材料的制备。
进一步，所述金属束流平衡蒸汽压，包括铟束流平衡蒸气压、钪束流平衡蒸气压、钇束流平衡蒸气压和铝束流平衡蒸气压。
本发明与现有技术相比具有如下优点：
1.本发明由于采用镓极性c面氮化镓衬底，该衬底制备工艺成熟，可实现大尺寸单晶生长；
2.本发明由于采用InAlN或ScAlN或YAlN过渡层，可实现镓极性c面氮化镓衬底、过渡层与镓极性面氮化镓外延层这三者的面内晶格匹配，降低材料位错密度。
3.本发明采用InAlN或ScAlN或YAlN过渡层，由于其禁带宽度大于氮化镓材料，可以提高导带能带，起背势垒作用，阻止镓极性c面氮化镓衬底表面吸附的杂质向镓极性面氮化镓材料中扩散，降低镓极性面氮化镓材料非故意掺杂背景载流子浓度。
4.本发明采用分子束外延技术生长镓极性面氮化镓外延层，在富镓生长条件下易增强金属原子在薄膜生长表面的迁移能力和扩散长度，提高镓极性面氮化镓表面形貌。
5.本发明由于衬底与外延层均为氮化镓材料，因此生长类型属于同质外延，可避免异质外延中晶格失配带来的高密度位错缺陷，有利于提高器件击穿电压。
6.本发明由于过渡层和氮化镓外延层生长温度、氮气流量和氮气射频源功率一致，不需要生长间隔和停顿，减小了生长工艺控制难度。
附图说明
图1是传统生长镓极性面氮化镓材料的结构示意图；
图2是本发明的镓极性面氮化镓材料的结构示意图；
图3是本发明制作镓极性面氮化镓材料的流程示意图。
具体实施方式
以下结合附图对本发明的实施例进行进一步详细描述。
参照图2，本发明的镓极性面氮化镓材料，自下而上包括衬底1、过渡层2、氮化镓外延层3。其中过渡层采用的InAlN或ScAlN或YAlN，厚度为1nm～10nm；衬底采用镓极性c面氮化镓单晶；镓极性面氮化镓外延层的厚度根据实际需求确定。
参照图3，本发明制作镓极性面氮化镓材料给出如下三种实施例。
实施例1，制作衬底为镓极性c面氮化镓单晶，过渡层为厚度10nm的In0.17Al0.83N，外延层为氮化镓的镓极性面氮化镓材料。
步骤一，选用镓极性c面氮化镓单晶作为衬底，如图3(a)。
步骤二，外延In0.17Al0.83N过渡层，如图3(b)。
将衬底基片置于反应室中，设定温度为660℃，氮气流量为2.3sccm，铟束流平衡蒸气压为1.4×10-7Torr，铝束流平衡蒸气压为1.5×10-7Torr，氮气射频源功率为375W的工艺条件，使用分子束外延技术，在镓极性c面氮化镓单晶衬底上淀积厚度为10nm的In0.17Al0.83N过渡层。
步骤三，外延镓极性面氮化镓外延层，如图3(c)。
保持反应室温度、氮气流量和氮气射频源功率不变，设置镓束流平衡蒸气压为6.2×10-7Torr，使用分子束外延技术，在In0.17Al0.83N过渡层上淀积镓极性面氮化镓外延层，完成镓极性面氮化镓材料的制作。
实施例2，制作衬底为镓极性c面氮化镓单晶，过渡层为厚度5nm的Sc0.18Al0.82N，外延层为氮化镓的镓极性面氮化镓材料。
步骤1，选用镓极性c面氮化镓单晶作为衬底，如图3(a)。
步骤2，外延Sc0.18Al0.82N过渡层，如图3(b)。
将衬底基片置于反应室中，设定温度为680℃，氮气流量为2.3sccm，钪束流平衡蒸气压为1.8×10-8Torr，铝束流平衡蒸气压为1.4×10-7Torr，氮气射频源功率为375W的工艺条件，使用分子束外延技术，在镓极性c面氮化镓单晶衬底上淀积厚度为5nm的Sc0.18Al0.82N过渡层。
步骤3，使用分子束外延技术淀积氮化镓外延层，如图3(c)。
保持反应室温度、氮气流量和氮气射频源功率不变，设置镓束流平衡蒸气压为6.8×10-7Torr，使用分子束外延技术，在Sc0.18Al0.82N过渡层上淀积镓极性面氮化镓外延层，完成镓极性面氮化镓材料的制作。
实施例3，制作衬底为镓极性c面氮化镓单晶，过渡层为厚度1nm的Y0.11Al0.89N，外延层为氮化镓的镓极性面氮化镓材料。
步骤A，选用镓极性c面氮化镓单晶作为衬底，如图3(a)。
步骤B，外延Y0.11Al0.89N过渡层，如图3(b)。
将衬底基片置于反应室中，使用分子束外延技术，在温度为700℃，氮气流量为2.3sccm，钇束流平衡蒸气压为1.5×10-8Torr，铝束流平衡蒸气压为1.8×10-7Torr，氮气射频源功率为375W的工艺条件下，在镓极性c面氮化镓单晶衬底上生长厚度为1nm的Y0.11Al0.89N过渡层。
步骤C，生长镓极性面氮化镓外延层,如图3(c)。
保持反应室温度、氮气流量和氮气射频源功率不变，设置镓束流平衡蒸气压为7.6×10-7Torr，使用分子束外延技术，在Y0.11Al0.89N过渡层上淀积镓极性面氮化镓外延层，完成镓极性面氮化镓材料的制作。
上述三个实例中的氮化镓外延层厚度根据实际需求确定。
以上描述仅是本发明的三个具体事例，并未构成对本发明的任何限制，显然对于本领域的专业人员来说，在了解了本发明的内容和原理后，都可能在不背离本发明原理、结构的情况下，进行形式和细节的各种修改和改变，但是这些基于本发明思想的修正和改变仍在本发明的权利要求范围之内。
Claims (4)
1.一种镓极性面氮化镓材料，包括衬底(1)和氮化镓外延层(3)，其特征在于：
所述氮化镓外延层(3)与衬底(1)之间设有过渡层(2)，该过渡层采用InAlN或ScAlN或YAlN，其厚度为1nm～10nm；
所述衬底(1)采用镓极性c面氮化镓单晶。
2.如权利要求1所述的材料，其特征在于：所述氮化镓外延层的厚度根据使用要求确定。
3.一种同质外延生长镓极性面氮化镓材料的方法，其特征在于，包括如下步骤：
1)选用镓极性c面氮化镓单晶作为衬底；
2)将衬底基片置于反应室中，在衬底基片上利用分子束外延法，在温度为660℃～700℃，氮气流量为2.3sccm，金属束流的平衡蒸汽压为1.5×10-8Torr～1.8×10-7Torr，氮气射频源功率为375W的工艺条件下，生长1nm～10nm的过渡层；
3)保持反应室温度、氮气流量和氮气射频源功率不变，设置镓束流平衡蒸气压为6.2×10-7Torr～7.6×10-7Torr，采用分子束外延法，在过渡层上生长氮化镓外延层，完成镓极性面氮化镓材料的制备。
4.如权利要求3所述方法，其特征在于：所述金属束流平衡蒸汽压，包括铟束流平衡蒸气压、钪束流平衡蒸气压、钇束流平衡蒸气压和铝束流平衡蒸气压。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023070428A1 (zh) * | 2021-10-28 | 2023-05-04 | 华为技术有限公司 | 集成电路、其制备方法、功率放大器及电子设备 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780876A (en) * | 1995-04-24 | 1998-07-14 | Sharp Kabushiki Kaisha | Compound semiconductor light emitting device and manufacturing method thereof |
| US20010020700A1 (en) * | 2000-01-13 | 2001-09-13 | Kaoru Inoue | Semiconductor device |
| US20060255341A1 (en) * | 2005-04-21 | 2006-11-16 | Aonex Technologies, Inc. | Bonded intermediate substrate and method of making same |
| CN101345192A (zh) * | 2008-07-07 | 2009-01-14 | 中国电子科技集团公司第十三研究所 | InAlN缓冲层生长AlN和AlGaN的方法 |
| US20100252835A1 (en) * | 2007-11-21 | 2010-10-07 | Mitsubishi Chemical Corporation | Nitride semiconductor and nitride semiconductor crystal growth method |
| US20130075753A1 (en) * | 2011-09-27 | 2013-03-28 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
| US20140191241A1 (en) * | 2013-01-07 | 2014-07-10 | Avogy, Inc. | Gallium nitride vertical jfet with hexagonal cell structure |
| CN104269469A (zh) * | 2014-09-19 | 2015-01-07 | 西安电子科技大学 | 一种降低宽禁带半导体器件欧姆接触电阻的方法 |
| US20170125557A1 (en) * | 2013-03-20 | 2017-05-04 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Method of making a graphene base transistor with reduced collector area |
-
2021
- 2021-01-18 CN CN202110060189.3A patent/CN112750689A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780876A (en) * | 1995-04-24 | 1998-07-14 | Sharp Kabushiki Kaisha | Compound semiconductor light emitting device and manufacturing method thereof |
| US20010020700A1 (en) * | 2000-01-13 | 2001-09-13 | Kaoru Inoue | Semiconductor device |
| US20060255341A1 (en) * | 2005-04-21 | 2006-11-16 | Aonex Technologies, Inc. | Bonded intermediate substrate and method of making same |
| US20100252835A1 (en) * | 2007-11-21 | 2010-10-07 | Mitsubishi Chemical Corporation | Nitride semiconductor and nitride semiconductor crystal growth method |
| CN101345192A (zh) * | 2008-07-07 | 2009-01-14 | 中国电子科技集团公司第十三研究所 | InAlN缓冲层生长AlN和AlGaN的方法 |
| US20130075753A1 (en) * | 2011-09-27 | 2013-03-28 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
| US20140191241A1 (en) * | 2013-01-07 | 2014-07-10 | Avogy, Inc. | Gallium nitride vertical jfet with hexagonal cell structure |
| US20170125557A1 (en) * | 2013-03-20 | 2017-05-04 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Method of making a graphene base transistor with reduced collector area |
| CN104269469A (zh) * | 2014-09-19 | 2015-01-07 | 西安电子科技大学 | 一种降低宽禁带半导体器件欧姆接触电阻的方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023070428A1 (zh) * | 2021-10-28 | 2023-05-04 | 华为技术有限公司 | 集成电路、其制备方法、功率放大器及电子设备 |
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