WO2012020676A1 - GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 - Google Patents
GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 Download PDFInfo
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Definitions
- the present invention relates to a polycrystalline aluminum nitride base material for GaN-based semiconductor crystal growth and a method for producing a GaN-based semiconductor using the same.
- gallium nitride (GaN) -based semiconductors such as GaN, InGaN, AlGaN, and InAlGaN are attracting attention and used as constituent layers.
- the LED element has a structure in which thin layers such as a GaN base are stacked.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-111766
- a multilayer structure of a GaN layer and a GaAlN layer is used. The yield of semiconductor elements is determined by how efficiently this thin semiconductor layer can be manufactured with a uniform thickness.
- An epitaxial growth method is usually used to manufacture a gallium nitride (GaN) based semiconductor device.
- GaN gallium nitride
- As the epitaxial substrate sapphire and SiC substrates have been used so far, but there are problems such as high cost (sapphire and SiC) and warpage due to a difference in linear expansion coefficient between gallium nitride and the substrate material.
- the linear expansion coefficient of GaN (a-plane) is 5.59 ⁇ 10 ⁇ 6 / K, whereas sapphire is about 7 to 8 ⁇ 10 ⁇ 6 / K and SiC is about 6.6 ⁇ 10 ⁇ 6 / K.
- the difference in linear expansion coefficient was about 1 ⁇ 10 ⁇ 6 / K or more.
- a GaN layer is epitaxially grown (epi-growth) on a sapphire substrate at a high temperature of about 1100 ° C. When exposed to such high temperatures, the problem of warpage due to the difference in linear expansion coefficient becomes large. In recent years, it has been desired to grow a GaN layer by enlarging a sapphire substrate in order to improve the number of semiconductor chips.
- an object of the present invention is to obtain an inexpensive material for obtaining a gallium nitride base crystal with little warpage.
- the polycrystalline aluminum nitride base material according to the present invention is a polycrystalline aluminum nitride base material as a substrate material for growing a GaN-based semiconductor, and has an average linear expansion coefficient of 4.9 ⁇ from 20 ° C. to 600 ° C. 10 ⁇ 6 / K or more and 6.1 ⁇ 10 ⁇ 6 / K or less, and the average linear expansion coefficient from 20 ° C. to 1100 ° C. is 5.5 ⁇ 10 ⁇ 6 / K or more and 6.6 ⁇ 10 ⁇ 6 / K or less. It is characterized by being.
- the polycrystalline aluminum nitride base material is composed of an aluminum nitride crystal and a grain boundary phase, and the content of the aluminum nitride crystal is 56.2% or more and 93.9% or less in terms of volume fraction. It is preferable.
- the grain boundary phase is at least one selected from the group consisting of Ca, Y, La, Ce, Nd, Pr, Eu, Gd, Dy, Ho, Er, Yb, and Lu. It is preferable to include a composite oxide with aluminum.
- the grain boundary phase preferably contains titanium nitride (TiN).
- the average particle diameter of the aluminum nitride crystal particles is 7 ⁇ m or less.
- the thermal conductivity is 46 W / m ⁇ K or more.
- the polycrystalline aluminum nitride base material preferably has a diameter of 50 mm or more.
- the surface roughness (Ra) of the polycrystalline aluminum nitride base material is 0.2 ⁇ m or less and the thickness is 3 mm or less.
- a method for manufacturing a GaN-based semiconductor according to another aspect of the present invention is characterized in that a GaN-based semiconductor crystal is grown using the polycrystalline aluminum nitride base material.
- the GaN-based semiconductor is crystal-grown through the buffer layer.
- the GaN-based semiconductor is selected from one selected from the group consisting of GaN, InGaN, AlGaN, and InAlGaN.
- a polycrystalline aluminum nitride substrate whose linear thermal expansion coefficient from room temperature to 1100 ° C. is close to that of GaN can be provided.
- the polycrystalline aluminum nitride substrate according to the present invention is a polycrystalline aluminum nitride base material as a substrate material for crystal growth of a GaN-based semiconductor, and has an average linear expansion coefficient of 4.9 ⁇ 10 4 from 20 ° C. to 600 ° C. -6 / K to 6.1 ⁇ 10 -6 / K and the average linear expansion coefficient from 20 ° C to 1100 ° C is 5.5 ⁇ 10 -6 / K to 6.6 ⁇ 10 -6 / K It is characterized by this.
- a polycrystalline aluminum nitride substrate means a substrate obtained by sintering aluminum nitride powder.
- the average linear expansion coefficient of the polycrystalline aluminum nitride substrate from 20 ° C. to 600 ° C. is from 4.9 ⁇ 10 ⁇ 6 / K to 6.1 ⁇ 10 ⁇ 6 / K, and from 20 ° C. to 1100 ° C.
- the average linear expansion coefficient is 5.5 ⁇ 10 ⁇ 6 / K or more and 6.6 ⁇ 10 ⁇ 6 / K or less.
- the linear expansion coefficient means a value indicating the amount of change in length with respect to temperature change.
- the measuring method shall be performed by a method according to JIS R1618.
- the unit is “/ K (Kelvin)”.
- the average linear expansion coefficient from 20 ° C. to 600 ° C. is a value obtained by dividing the rate of increase (expansion coefficient) at 600 ° C. with respect to 20 ° C. by the temperature difference of 580 ° C. is there.
- the linear expansion coefficient from 20 ° C. to 1100 ° C. is a value obtained by dividing the rate of increase (expansion coefficient) at 1100 ° C. with respect to 20 ° C. by 1080 ° C. which is a temperature difference.
- the linear expansion coefficient of GaN (a-plane).
- the linear expansion coefficient of GaN (a-plane) is 5.59 ⁇ 10 ⁇ 6 / K near room temperature, whereas sapphire is about 7 to 8 ⁇ 10 ⁇ 6 / K, and SiC is about 6.6 ⁇ .
- the difference in linear expansion coefficient was 10 ⁇ 6 / K, and about 1.0 ⁇ 10 ⁇ 6 / K.
- sapphire and SiC are single crystal bodies, the linear expansion coefficient as a material cannot be adjusted. In order to eliminate the difference in linear expansion coefficient without problems, it is necessary to reduce the GaN-based semiconductor, but the mass productivity of semiconductor elements (LEDs, semiconductor lasers, etc.) is poor, which increases the cost.
- the polycrystalline aluminum nitride substrate according to the present invention has an average coefficient of linear expansion from 20 ° C. to 600 ° C. of 4.9 ⁇ 10 ⁇ 6 / K or more and 6.1 ⁇ 10 ⁇ 6 / K or less, and from 20 ° C. to 1100. Since the average coefficient of linear expansion up to 5.5 ° C. is not less than 5.5 ⁇ 10 ⁇ 6 / K and not more than 6.6 ⁇ 10 ⁇ 6 / K, the problem of warping can be reduced even if the GaN-based semiconductor is increased in diameter. The mass productivity of the element can be improved.
- the polycrystalline aluminum nitride base material is preferably composed of an aluminum nitride crystal and a grain boundary phase, and the content of the aluminum nitride crystal is preferably 56.2% or more and 93.9% or less by volume fraction.
- the polycrystalline body is obtained by solidifying and sintering aluminum nitride powder (AlN powder). In order to increase the sinterability, it is preferable to use a sintering aid.
- An aluminum nitride crystal content of 56.2% or more and 93.9% or less means that the balance is a grain boundary phase. If the proportion of aluminum nitride crystals is less than 56.2% or exceeds 93.9%, it is difficult to obtain the intended linear expansion coefficient.
- the porosity is preferably 1% by volume or less, and more preferably 0.5% by volume or less.
- the substrate surface In order to grow a GaN layer on a polycrystalline aluminum nitride substrate, the substrate surface needs to be flat without voids due to pores. For this reason, the surface roughness Ra of the substrate is preferably 0.2 ⁇ m or less, and it is preferable that the substrate is mirror-finished so that Ra is 0.05 ⁇ m or less.
- the grain boundary phase includes a composite oxide of aluminum and at least one selected from the group consisting of Ca, Y, La, Ce, Nd, Pr, Eu, Gd, Dy, Ho, Er, Yb, and Lu. It is preferable.
- the grain boundary phase is a phase formed by changing the sintering aid during the sintering process. The presence of the grain boundary phase improves sinterability and facilitates control of the linear thermal expansion coefficient. Since these grain boundary phase components have a larger linear expansion coefficient than that of the aluminum nitride crystal, they are effective in adjusting the linear expansion coefficient of the aluminum nitride substrate. Whether or not it is a complex oxide can be analyzed by XRD.
- At least one selected from the group consisting of Ca, Y, La, Ce, Nd, Pr, Eu, Gd, Dy, Ho, Er, Yb, and Lu, which are the first sintering aids, increases the sinterability. It is effective and is preferably added as an oxide. If these rare earth elements are used, normal pressure sintering is also possible.
- the oxide of aluminum which is the second sintering aid may utilize impurity oxygen in the aluminum nitride powder, or may be a method in which aluminum oxide is added as a sintering aid. This is because the presence of aluminum oxide tends to form a composite oxide with the first sintering aid.
- these composite oxides are materials that can easily adjust the linear expansion coefficient and are stable even at a high temperature around 1100 ° C.
- the first sintering aid at least one selected from the group consisting of Ca, Y, La, Ce, Nd, Pr, Eu, Gd, Dy, Ho, Er, Yb, and Lu is used in terms of oxide. It is preferable to contain ⁇ 30% by mass. Further, it is preferable that aluminum is contained in an amount of 1 to 23% by mass in terms of oxide as the second sintering aid.
- TiN titanium nitride
- the rare earth element as the first sintering aid is expensive, by replacing a part thereof with TiN, it is possible to reduce the cost while controlling the linear expansion coefficient. Further, by using in combination with the first sintering aid, it is possible to produce at normal pressure sintering.
- the average particle size of the aluminum nitride crystal particles is preferably 7 ⁇ m or less.
- a grain boundary phase having a larger linear expansion coefficient than the aluminum nitride crystal particles is present at the grain boundaries between the aluminum nitride crystal particles. If the aluminum nitride crystal particles are too large, the abundance ratio between the aluminum nitride crystal particles and the grain boundary phase becomes non-uniform, which may cause a partial variation in the linear expansion coefficient. If the particle size is relatively small with an average particle size of 7 ⁇ m or less, partial variations can be reduced.
- the lower limit of the average particle diameter is not particularly limited, but is preferably 1 ⁇ m or more.
- the average particle size is less than 1 ⁇ m, raw material powder having a small particle size must be used, resulting in an increase in raw material cost. Further, by setting the average particle size to 7 ⁇ m or less, even if the aluminum nitride crystal particles fall off due to the polishing process, a flat surface is easily obtained without forming a large crater (degreasing trace). It is also important to obtain a flat surface for growing GaN-based crystals.
- the polycrystalline aluminum nitride substrate preferably has a thermal conductivity of 46 W / m ⁇ K or more.
- the thermal conductivity of the sapphire substrate is about 46 W / m ⁇ K.
- the thermal conductivity of the sapphire substrate is about 46 W / m ⁇ K.
- the upper limit of heat conductivity is not specifically limited, If many sintering aids are included, the heat conductivity will be 170 W / m * K or less.
- the diameter L of the substrate can be as large as 100 mm or more.
- the upper limit of a diameter is not specifically limited, In consideration of the ease of making, it is preferable that the diameter L is 300 mm or less.
- the crystal growth surface may be square or rectangular.
- the thickness of the substrate is preferably 3 mm or less.
- the thermal expansion coefficient can be adjusted after the thickness is reduced to 3 mm or less.
- the thickness W of the substrate is preferably 0.3 to 1.5 mm, more preferably 0.5 to 1.0 mm. If the substrate is thicker than 1.5 mm, the heat dissipation becomes worse. On the other hand, if it is thinner than 0.3 mm, the strength of the substrate becomes insufficient, and the handleability deteriorates.
- FIG. 2 is a schematic cross-sectional view showing an example of a manufacturing process of a GaN-based semiconductor.
- 1 is a polycrystalline aluminum nitride substrate
- 2 is a GaN-based semiconductor layer
- 3 is a buffer layer.
- a buffer layer is formed on the polycrystalline aluminum nitride substrate 1.
- the buffer layer is preferably made of the same material as the GaN-based semiconductor layer.
- a GaN-based semiconductor is grown on the buffer layer.
- the GaN-based semiconductor is preferably a kind selected from the group consisting of GaN, InGaN, AlGaN, and InAlGaN. Both are based on GaN, and the linear expansion coefficient of GaN (a-plane) is around 5.59 ⁇ 10 ⁇ 6 / K at room temperature.
- a polycrystalline aluminum nitride substrate 1 is disposed on a susceptor (not shown), and TMG gas (trimethylgallium gas) is formed by metal organic chemical vapor deposition (MOCVD) at 500 to 600 ° C. ), Flowing ammonia gas to form a GaN buffer layer.
- MOCVD metal organic chemical vapor deposition
- the film thickness of the GaN layer is increased (crystal growth) at 1000 to 1100 ° C. Since the MOCVD method is performed at a high temperature of 500 to 1100 ° C., it is effective to control the linear expansion coefficient in this temperature range. In particular, the expansion or contraction of the substrate in the cooling process from a high temperature of 1100 ° C. to 600 ° C. affects the warpage. In the polycrystalline aluminum nitride substrate according to the present invention, the linear expansion coefficient is approximated to that of a GaN-based semiconductor, so that the problem of warpage can be greatly suppressed.
- the GaN-based semiconductor can be grown in a large range (area), a large number of light emitting elements can be obtained at a time, so that mass productivity is improved.
- various layers such as a GaN base semiconductor layer and an insulating layer are formed or etched. Further, if a polycrystalline aluminum nitride substrate is unnecessary when manufacturing a light emitting element, it may be removed.
- a polycrystalline aluminum nitride substrate having a grain boundary phase is easy to remove with an alkaline solution or the like. It can also be scraped off.
- the thickness of the polycrystalline aluminum nitride substrate is preferably 3 mm or less.
- the method for producing the polycrystalline aluminum nitride substrate according to the present invention is not particularly limited, but the following method can be mentioned as a method for producing with good yield.
- aluminum nitride powder is prepared as a raw material powder.
- the aluminum nitride powder preferably has an average particle size of 0.6 to 2 ⁇ m. If the average particle size is less than 0.6 ⁇ m, the particle size is too fine and the price of the aluminum nitride powder may increase. On the other hand, if it exceeds 2 ⁇ m, the average particle size of the sintered aluminum nitride crystal is likely to exceed 7 ⁇ m. More preferably, aluminum nitride powder having an average particle size of 1.0 to 1.5 ⁇ m is used.
- the oxygen content in the aluminum nitride powder is preferably 0.6 to 2% by mass.
- a first sintering aid (Ca, Y, La, Ce, Nd, Pr, Eu, Gd, Dy, Ho, Er, Yb, and Lu is selected.
- a necessary amount of a single type of oxide), a second sintering aid (aluminum oxide), and a third sintering aid (TiN) are prepared and mixed with the aluminum nitride powder.
- the average particle size of the sintering aid is preferably 0.6 to 2 ⁇ m, which is about the same as that of the aluminum nitride powder.
- the amount of the sintering aid added is preferably mixed so that the volume fraction of aluminum nitride crystals is in the range of 56.2% to 93.9%. If the average particle size of the sintering aid powder is set to the same level as that of the aluminum nitride powder, the volume fraction can be easily adjusted.
- an aluminum nitride powder, a sintering aid powder, a binder, a solvent, a dispersion material, and the like are mixed to prepare a raw material slurry.
- a molded body is produced using the prepared raw material slurry.
- the method for producing the molded body include sheet molding using a doctor blade method and press molding in which granulated powder produced from a slurry is molded with a mold. If it is a doctor blade method, it will be easy to produce the large molded object 50 mm or more in diameter, and also 100 mm or more.
- a molded object is a sheet form, if necessary, a molded object may be processed and a disk shaped molded object may be produced.
- the sintering temperature is preferably 1600-1900 ° C.
- the first sintering aid is used as the sintering aid, it can be sintered by a normal pressure sintering method.
- the first sintering aid is not used, it is preferable to use a pressure sintering method such as hot pressing.
- the sintering atmosphere is preferably an inert atmosphere.
- Mirror processing is performed on the GaN-based semiconductor forming surface of the sintered body thus obtained.
- the surface processing is performed using a diamond grindstone so that the surface roughness Ra is 0.2 ⁇ m or less, preferably 0.05 ⁇ m or less. Moreover, you may perform the process which arranges the shape of a side surface or a back surface as needed.
- Example 1 Aluminum nitride powder (average particle size 1 ⁇ m, oxygen content 1.0 mass%), yttria (Y 2 O 3 ) powder (average particle size 1 ⁇ m) and alumina (Al 2 O 3 ) powder (average particle size 1 ⁇ m)
- the raw material powder was prepared by mixing at the ratio shown in Table 1.
- the mixing amount in the table is a mixture of yttria, which is the first sintering aid, alumina, which is the second sintering aid, and aluminum nitride powder, so as to be 100 parts by weight. is there.
- raw material powder was added to a solvent such as toluene or ethanol, and a dispersant was further added. Thereafter, an organic binder and a plasticizer were added and further mixed, and a green sheet having a thickness of 1.2 mm was formed by a doctor blade method. The green sheet was cut into a length of 170 mm ⁇ width of 170 mm, degreased, and sintered in nitrogen at 1700 ° C. for 5 hours to prepare a polycrystalline aluminum nitride substrate of Sample 1. Similar operations were repeated to produce polycrystalline aluminum nitride substrates of Samples 2-8.
- a solvent such as toluene or ethanol
- a dispersant was further added.
- an organic binder and a plasticizer were added and further mixed, and a green sheet having a thickness of 1.2 mm was formed by a doctor blade method.
- the green sheet was cut into a length of 170 mm ⁇ width of 170 mm, degreased, and sintered in nitrogen at
- the linear thermal expansion coefficient of each sample was measured.
- the linear expansion coefficient was measured according to JIS R1618.
- the temperature from 20 to 1300 ° C. was measured at about 0.1 ° C. to 0.3 ° C. intervals.
- the constituent phase of the grain boundary phase was analyzed by XRD.
- the thermal conductivity was measured by a laser flash method.
- the average particle size of the aluminum nitride crystal particles was measured.
- the average particle diameter of the aluminum nitride crystal particles was measured by a line intercept method by taking an enlarged photograph (100 ⁇ m ⁇ 100 ⁇ m) of a cross section of an arbitrary part of the sample. The results are shown in Table 1.
- Samples 2 to 7 are examples, and Sample 1 and Sample 8 are comparative examples.
- a composite oxide such as a YAG phase (Y 3 Al 5 O 12 ) or a YAP phase (YAlO 3 ) was detected in the grain boundary phase.
- the composite oxide was specified by XRD.
- Example 2 Next, the same experiment as in Example 1 was performed using Gd 2 O 3 (samples 9 to 14) as the first sintering aid and alumina as the second sintering aid.
- the average particle size of the aluminum nitride powder (impurity oxygen content 1.2 mass%), the first sintering aid, and the second sintering aid were all those having an average particle size of 1.2 ⁇ m.
- the sintering temperature was in the range of 1700-1800 ° C., and all were sintered in a nitrogen atmosphere.
- the same measurement as in Example 1 was performed on each obtained sample. The results are shown in Table 2.
- Samples 10 to 13 are examples, and Sample 9 and Sample 14 are comparative examples.
- a complex oxide such as Ga 3 Al 5 O 12 or GaAlO 3 was detected in the grain boundary phase. It can be seen that the linear expansion coefficient can be controlled even if the first sintering aid is changed to Gd 2 O 3 .
- Example 3 Next, the same experiment as in Example 1 was performed using Dy 2 O 3 (samples 15 to 20) as the first sintering aid and alumina as the second sintering aid.
- the average particle size of the aluminum nitride powder (impurity oxygen content 1.2 mass%), the first sintering aid, and the second sintering aid were all those having an average particle size of 1.2 ⁇ m.
- the sintering temperature was in the range of 1700-1800 ° C., and all were sintered in a nitrogen atmosphere.
- the same measurement as in Example 1 was performed on each obtained sample. The results are shown in Table 3.
- Samples 16 to 19 are examples, and Sample 15 and Sample 20 are comparative examples.
- a composite oxide such as Dy 3 Al 5 O 12 or DyAlO 3 was detected in the grain boundary phase. It can be seen that the linear expansion coefficient can be controlled even if the first sintering aid is changed to Dy 2 O 3 .
- the composite oxide was specified by XRD.
- Example 4 Ho 2 O 3 (sample 21), Er 2 O 3 (sample 22), Yb 2 O 3 (sample 23) were used as the first sintering aid, and alumina was used as the second sintering aid. . Further, the addition amount was adjusted so that the volume fraction of the AlN sintered body was 80%. The average particle size of the aluminum nitride powder (impurity oxygen content 1.2 mass%), the first sintering aid, and the second sintering aid were all those having an average particle size of 1.2 ⁇ m. The sintering temperature was in the range of 1700-1800 ° C., and all were sintered in a nitrogen atmosphere. Measurements similar to those in Examples 1 to 3 were performed on the obtained samples. The results are shown in Table 4.
- Aluminum nitride powder impurity oxygen content 0.8 mass%), the first sintering aid, the second sintering aid, and the third sintering aid were used with an average particle size of 1 ⁇ m.
- the sintering temperature was 1720 ° C. The results are shown in Table 5.
- Example 6 The polycrystalline aluminum nitride substrates of Samples 1 to 25 were processed into a disk shape having a diameter of 2 inches (50.8 mm), a thickness of 1 mm, and a surface roughness Ra of 0.01 ⁇ m. A GaN semiconductor crystal was grown using each sample.
- a sample (polycrystalline aluminum nitride substrate) is placed on a susceptor in an MOCVD apparatus, and TMG gas (trimethylgallium gas) and ammonia gas are flown at 500 to 600 ° C. by metal organic vapor phase epitaxy (MOCVD method).
- a buffer layer was formed.
- the film thickness of the GaN layer was increased at 1000 to 1100 ° C. (crystal growth was performed).
- the buffer layer was 0.02 ⁇ m, and the final GaN layer thickness was 3 ⁇ m.
- the GaN layer was provided on the surface of the polycrystalline aluminum nitride substrate (diameter 2 inches).
- the average linear expansion coefficient at 20 ° C. to 600 ° C. is 4.9 ⁇ 10 ⁇ 6 / K or more and 6.1 ⁇ 10 ⁇ 6 / K or less, and 20 ° C. to 1100 It can be seen that it is important that the average linear expansion coefficient up to ° C. is 5.5 ⁇ 10 ⁇ 6 / K or more and 6.6 ⁇ 10 ⁇ 6 / K or less.
- samples of the examples (Samples 2 to 7, 10 to 13, 16 to 19, and 21 to 25) have a high heat conductivity of 46 W / m / K or more, and thus have good heat dissipation. It is thought that it is effective in the effect which can suppress a malfunction. As a result, light emitting elements such as LEDs and semiconductor lasers can be efficiently manufactured.
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Abstract
Description
窒化アルミニウム粉末(平均粒径1μm、酸素含有量1.0質量%)とイットリア(Y2O3)粉末(平均粒径1μm)とアルミナ(Al2O3)粉末(平均粒径1μm)とを、表1に示した割合で混合して原料粉末を調製した。なお、表中の混合量は、第一の焼結助剤であるイットリア、第二の焼結助剤であるアルミナ、および窒化アルミニウム粉末を混合して100重量部となるように混合したものである。
次に、第一の焼結助剤としてGd2O3(試料9~14)を第二の焼結助剤としてアルミナを使用して実施例1と同様の実験を行った。なお、窒化アルミニウム粉末(不純物酸素量1.2質量%)、第一の焼結助剤および第二の焼結助剤の平均粒径はいずれも平均粒径1.2μmのものを用いた。焼結温度は1700~1800℃の範囲であり、いずれも窒素雰囲気中で焼結した。得られた各試料に対し、実施例1と同様の測定を行った。その結果を表2に示す。
次に、第一の焼結助剤としてDy2O3(試料15~20)を第二の焼結助剤としてアルミナを使用して実施例1と同様の実験を行った。なお、窒化アルミニウム粉末(不純物酸素量1.2質量%)、第一の焼結助剤および第二の焼結助剤の平均粒径はいずれも平均粒径1.2μmのものを用いた。焼結温度は1700~1800℃の範囲であり、いずれも窒素雰囲気中で焼結した。得られた各試料に対し、実施例1と同様の測定を行った。その結果を表3に示す。
次に、第一の焼結助剤としてHo2O3(試料21),Er2O3(試料22)、Yb2O3(試料23)、第二の焼結助剤としてアルミナを使用した。また、添加量はAlN焼結体の体積分率が80%になるような添加量に調整した。なお、窒化アルミニウム粉末(不純物酸素量1.2質量%)、第一の焼結助剤および第二の焼結助剤の平均粒径はいずれも平均粒径1.2μmのものを用いた。焼結温度は1700~1800℃の範囲であり、いずれも窒素雰囲気中で焼結した。得られた各試料に対し、実施例1~3と同様の測定を行った。その結果を表4に示す。
次に、第一の焼結助剤としてイットリア、第二の焼結助剤としてアルミナ、第三の焼結助剤として窒化チタン(TiN)(線膨張係数=9.4×10-6/K)を使用して多結晶窒化アルミニウム基板を作製した。窒化アルミニウム粉末(不純物酸素量0.8質量%)、第一の焼結助剤、第二の焼結助剤および第三の焼結助剤ともに平均粒径1μmのものを用いた。また、焼結温度は1720℃で行った。その結果を表5に示す。
試料1~25の多結晶窒化アルミニウム基板を加工して、直径2インチ(50.8mm)×厚さ1mm、表面粗さRa0.01μmの円盤状に加工した。各試料を用いてGaN半導体を結晶成長させた。
2…GaNベース半導体層
3…バッファー層
L…多結晶窒化アルミニウム基材の直径
W…多結晶窒化アルミニウム基材の厚さ
Claims (11)
- GaNベース半導体を結晶成長させるための基板材料としての多結晶窒化アルミニウム基材であって、20℃から600℃までの平均線膨張係数が4.9×10-6/K以上6.1×10-6/K以下、20℃から1100℃までの平均線膨張係数が5.5×10-6/K以上6.6×10-6/K以下であることを特徴とする、多結晶窒化アルミニウム基材。
- 多結晶窒化アルミニウム基材は窒化アルミニウム結晶と粒界相からなり、窒化アルミニウム結晶の含有量が、体積分率で56.2%以上93.9%以下である、請求項1に記載の多結晶窒化アルミニウム基材。
- 粒界相は、Ca、Y、La、Ce、Nd、Pr,Eu、Gd,Dy,Ho,Er、Yb,Luからなる群から選ばれる少なくとも一種とアルミニウムとの複合酸化物を含む、請求項1または2に記載の多結晶窒化アルミニウム基材。
- 粒界相は窒化チタン(TiN)を含む、請求項1~3のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 窒化アルミニウム結晶粒子の平均粒径が7μm以下である、請求項1~4のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 熱伝導率が46W/m・K以上である、請求項1~5のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 直径が50mm以上である、請求項1~6のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 表面粗さ(Ra)が0.2μm以下であり、厚さが3mm以下である、請求項1~7のいずれか1項に記載の多結晶窒化アルミニウム基材。
- GaNベース半導体を製造する方法であって、請求項1~8のいずれか1項に記載の多結晶窒化アルミニウム基材を用いてGaNベース半導体結晶を成長させることを含むことを特徴とする、GaNベース半導体の製造方法。
- GaNベース半導体をバッファー層を介して結晶成長させる、請求項9記載のGaNベース半導体の製造方法。
- GaNベース半導体が、GaN、InGaN、AlGaN、およびInAlGaNからなる群から選択される一種からなる、請求項9または10に記載のGaNベース半導体の製造方法。
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JP2018080103A (ja) * | 2010-12-14 | 2018-05-24 | ヘクサテック,インコーポレイテッド | 多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用 |
JP2013212963A (ja) * | 2012-04-03 | 2013-10-17 | Sumitomo Electric Ind Ltd | AlN系膜の製造方法およびそれに用いられる複合基板 |
WO2014004079A1 (en) * | 2012-06-29 | 2014-01-03 | Corning Incorporated | Glass-ceramic substrates for semiconductor processing |
CN104703939A (zh) * | 2012-06-29 | 2015-06-10 | 康宁股份有限公司 | 用于半导体加工的玻璃陶瓷基材 |
WO2015146978A1 (ja) * | 2014-03-25 | 2015-10-01 | 住友電気工業株式会社 | 複合基板およびそれを用いた半導体ウエハの製造方法 |
JP2015182928A (ja) * | 2014-03-25 | 2015-10-22 | 住友電気工業株式会社 | 複合基板およびそれを用いた半導体ウエハの製造方法 |
JP2016046459A (ja) * | 2014-08-26 | 2016-04-04 | 住友電気工業株式会社 | 電界効果型トランジスタおよびその製造方法 |
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JP6002038B2 (ja) | 2016-10-05 |
US20130157445A1 (en) | 2013-06-20 |
JPWO2012020676A1 (ja) | 2013-10-28 |
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