JP6002038B2 - GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 - Google Patents
GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 Download PDFInfo
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Description
窒化アルミニウム粉末(平均粒径1μm、酸素含有量1.0質量%)とイットリア(Y2O3)粉末(平均粒径1μm)とアルミナ(Al2O3)粉末(平均粒径1μm)とを、表1に示した割合で混合して原料粉末を調製した。なお、表中の混合量は、第一の焼結助剤であるイットリア、第二の焼結助剤であるアルミナ、および窒化アルミニウム粉末を混合して100重量部となるように混合したものである。
次に、第一の焼結助剤としてGd2O3(試料9〜14)を第二の焼結助剤としてアルミナを使用して実施例1と同様の実験を行った。なお、窒化アルミニウム粉末(不純物酸素量1.2質量%)、第一の焼結助剤および第二の焼結助剤の平均粒径はいずれも平均粒径1.2μmのものを用いた。焼結温度は1700〜1800℃の範囲であり、いずれも窒素雰囲気中で焼結した。得られた各試料に対し、実施例1と同様の測定を行った。その結果を表2に示す。
次に、第一の焼結助剤としてDy2O3(試料15〜20)を第二の焼結助剤としてアルミナを使用して実施例1と同様の実験を行った。なお、窒化アルミニウム粉末(不純物酸素量1.2質量%)、第一の焼結助剤および第二の焼結助剤の平均粒径はいずれも平均粒径1.2μmのものを用いた。焼結温度は1700〜1800℃の範囲であり、いずれも窒素雰囲気中で焼結した。得られた各試料に対し、実施例1と同様の測定を行った。その結果を表3に示す。
次に、第一の焼結助剤としてHo2O3(試料21),Er2O3(試料22)、Yb2O3(試料23)、第二の焼結助剤としてアルミナを使用した。また、添加量はAlN焼結体の体積分率が80%になるような添加量に調整した。なお、窒化アルミニウム粉末(不純物酸素量1.2質量%)、第一の焼結助剤および第二の焼結助剤の平均粒径はいずれも平均粒径1.2μmのものを用いた。焼結温度は1700〜1800℃の範囲であり、いずれも窒素雰囲気中で焼結した。得られた各試料に対し、実施例1〜3と同様の測定を行った。その結果を表4に示す。
次に、第一の焼結助剤としてイットリア、第二の焼結助剤としてアルミナ、第三の焼結助剤として窒化チタン(TiN)(線膨張係数=9.4×10−6/K)を使用して多結晶窒化アルミニウム基板を作製した。窒化アルミニウム粉末(不純物酸素量0.8質量%)、第一の焼結助剤、第二の焼結助剤および第三の焼結助剤ともに平均粒径1μmのものを用いた。また、焼結温度は1720℃で行った。その結果を表5に示す。
試料1〜25の多結晶窒化アルミニウム基板を加工して、直径2インチ(50.8mm)×厚さ1mm、表面粗さRa0.01μmの円盤状に加工した。各試料を用いてGaN半導体を結晶成長させた。
2…GaNベース半導体層
3…バッファー層
L…多結晶窒化アルミニウム基材の直径
W…多結晶窒化アルミニウム基材の厚さ
Claims (7)
- GaNベース半導体を結晶成長させるための基板材料としての多結晶窒化アルミニウム基材であって、
20℃から600℃までの平均線膨張係数が4.9×10−6/K以上6.1×10−6/K以下、20℃から1100℃までの平均線膨張係数が5.5×10−6/K以上6.6×10−6/K以下であり、
第一焼結剤として、Y、GdおよびDyから選ばれる少なくとも1種を、酸化物換算で4〜30質量%、および第二焼結剤として、アルミニウムを酸化物換算で1〜23質量%含み、
前記多結晶窒化アルミニウム基材は窒化アルミニウム結晶と粒界相からなり、窒化アルミニウム結晶の含有量が、体積分率で56.2%以上93.9%以下であり、
前記粒界相は、Y、GdおよびDyから選ばれる少なくとも1種とアルミニウムとの複合酸化物を含み、
前記複合酸化物は、Y 3 Al 5 O 12 、YAlO 3 、Gd 3 Al 5 O 12 、GdAlO 3 、Dy 3 Al 5 O 12 、DyAlO 3 から選ばれる少なくとも1種であり、
前記多結晶窒化アルミニウム基材の表面粗さ(Ra)が0.2μm以下であり、厚さが3mm以下である、
ことを特徴とする、多結晶窒化アルミニウム基材。 - 窒化アルミニウム結晶粒子の平均粒径が7μm以下である、請求項1に記載の多結晶窒化アルミニウム基材。
- 熱伝導率が46W/m・K以上である、請求項1または2に記載の多結晶窒化アルミニウム基材。
- 直径が50mm以上である、請求項1〜3のいずれか1項に記載の多結晶窒化アルミニウム基材。
- GaNベース半導体を製造する方法であって、請求項1〜4のいずれか1項に記載の多結晶窒化アルミニウム基材を用いてGaNベース半導体結晶を成長させることを含むことを特徴とする、GaNベース半導体の製造方法。
- GaNベース半導体をバッファー層を介して結晶成長させる、請求項5記載のGaNベース半導体の製造方法。
- GaNベース半導体が、GaN、InGaN、AlGaN、およびInAlGaNからなる群から選択される一種からなる、請求項5または6に記載のGaNベース半導体の製造方法。
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US8766274B2 (en) * | 2010-12-14 | 2014-07-01 | Hexatech, Inc. | Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies |
JP5929434B2 (ja) * | 2012-04-03 | 2016-06-08 | 住友電気工業株式会社 | AlN系膜の製造方法およびそれに用いられる複合基板 |
EP2867177A1 (en) | 2012-06-29 | 2015-05-06 | Corning Incorporated | Glass-ceramic substrates for semiconductor processing |
JP6331553B2 (ja) * | 2014-03-25 | 2018-05-30 | 住友電気工業株式会社 | 複合基板およびそれを用いた半導体ウエハの製造方法 |
JP2016046459A (ja) * | 2014-08-26 | 2016-04-04 | 住友電気工業株式会社 | 電界効果型トランジスタおよびその製造方法 |
JP2016058693A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 |
JP6662160B2 (ja) * | 2016-04-07 | 2020-03-11 | 住友電気工業株式会社 | 多結晶セラミック基板、接合層付き多結晶セラミック基板および積層基板 |
US10355120B2 (en) | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
US10759712B2 (en) * | 2017-11-09 | 2020-09-01 | Canon Kabushiki Kaisha | Powder for additive modeling, structure, semiconductor production device component, and semiconductor production device |
EP3677562B1 (en) * | 2018-09-19 | 2024-01-03 | Maruwa Co. Ltd. | Aluminum nitride sintered compact |
DE102021124366A1 (de) * | 2021-09-21 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines wachstumssubstrats, wachstumssubstrat, und verfahren zur herstellung einer vielzahl optoelektronischer halbleiterchips |
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