SG11201504823YA - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG11201504823YA SG11201504823YA SG11201504823YA SG11201504823YA SG11201504823YA SG 11201504823Y A SG11201504823Y A SG 11201504823YA SG 11201504823Y A SG11201504823Y A SG 11201504823YA SG 11201504823Y A SG11201504823Y A SG 11201504823YA SG 11201504823Y A SG11201504823Y A SG 11201504823YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011282509 | 2011-12-23 | ||
PCT/JP2012/083764 WO2013094772A1 (en) | 2011-12-23 | 2012-12-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201504823YA true SG11201504823YA (en) | 2015-07-30 |
Family
ID=48653626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504823YA SG11201504823YA (en) | 2011-12-23 | 2012-12-19 | Semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (3) | US8796683B2 (ja) |
JP (7) | JP2013149965A (ja) |
KR (1) | KR102106030B1 (ja) |
CN (3) | CN109065630B (ja) |
SG (1) | SG11201504823YA (ja) |
TW (2) | TWI580047B (ja) |
WO (1) | WO2013094772A1 (ja) |
Families Citing this family (59)
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KR101944656B1 (ko) * | 2009-06-30 | 2019-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI642193B (zh) | 2012-01-26 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
TWI604609B (zh) | 2012-02-02 | 2017-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
KR102330543B1 (ko) | 2012-04-13 | 2021-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102295737B1 (ko) | 2012-05-10 | 2021-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 |
US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9885108B2 (en) * | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
US9018624B2 (en) | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
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TWI637517B (zh) | 2012-10-24 | 2018-10-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP6300489B2 (ja) | 2012-10-24 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI621270B (zh) * | 2013-02-07 | 2018-04-11 | 群創光電股份有限公司 | 薄膜電晶體元件與薄膜電晶體顯示裝置 |
US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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US9818763B2 (en) * | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
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JP6383616B2 (ja) | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9590111B2 (en) | 2013-11-06 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
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TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
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SG11201604650SA (en) * | 2013-12-26 | 2016-07-28 | Semiconductor Energy Lab | Semiconductor device |
JP2015188062A (ja) * | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
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US10141453B2 (en) * | 2014-12-25 | 2018-11-27 | Sharp Kabushiki Kaisha | Semiconductor device |
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CN105932024B (zh) * | 2016-05-05 | 2019-05-24 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
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JP7086934B2 (ja) * | 2017-03-31 | 2022-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102449467B1 (ko) * | 2017-12-11 | 2022-09-29 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그의 제조방법, 및 그를 포함한 표시장치 |
CN108987482B (zh) * | 2017-05-31 | 2022-05-17 | 乐金显示有限公司 | 薄膜晶体管、包括其的栅极驱动器、以及包括该栅极驱动器的显示装置 |
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CN107689345B (zh) * | 2017-10-09 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Tft基板及其制作方法与oled面板及其制作方法 |
JP2019091794A (ja) * | 2017-11-14 | 2019-06-13 | シャープ株式会社 | 半導体装置 |
KR102446301B1 (ko) * | 2017-12-11 | 2022-09-23 | 엘지디스플레이 주식회사 | 지지층을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
TW202032242A (zh) | 2018-08-03 | 2020-09-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
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CN102130009B (zh) | 2010-12-01 | 2012-12-05 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
US8797303B2 (en) | 2011-03-21 | 2014-08-05 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
US20130012694A1 (en) * | 2011-07-05 | 2013-01-10 | Nanjingjinsirui Science & Technology Biology Corp. | Monumental adornment |
JP6013685B2 (ja) | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20130037793A1 (en) | 2011-08-11 | 2013-02-14 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
US9379254B2 (en) | 2011-11-18 | 2016-06-28 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2012
- 2012-12-17 US US13/716,939 patent/US8796683B2/en not_active Expired - Fee Related
- 2012-12-17 TW TW101147851A patent/TWI580047B/zh not_active IP Right Cessation
- 2012-12-17 TW TW106100181A patent/TWI613824B/zh active
- 2012-12-19 KR KR1020147019553A patent/KR102106030B1/ko active IP Right Grant
- 2012-12-19 SG SG11201504823YA patent/SG11201504823YA/en unknown
- 2012-12-19 CN CN201810569628.1A patent/CN109065630B/zh active Active
- 2012-12-19 CN CN201280063818.7A patent/CN103999228B/zh not_active Expired - Fee Related
- 2012-12-19 WO PCT/JP2012/083764 patent/WO2013094772A1/en active Application Filing
- 2012-12-19 CN CN202110664358.4A patent/CN113421928A/zh active Pending
- 2012-12-19 JP JP2012276700A patent/JP2013149965A/ja not_active Withdrawn
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2014
- 2014-08-04 US US14/450,997 patent/US9166061B2/en active Active
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2015
- 2015-09-15 US US14/854,566 patent/US9559213B2/en active Active
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2016
- 2016-10-06 JP JP2016197831A patent/JP2017017345A/ja not_active Withdrawn
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2018
- 2018-04-10 JP JP2018075205A patent/JP2018137468A/ja not_active Withdrawn
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2019
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2020
- 2020-06-04 JP JP2020097458A patent/JP2020145478A/ja not_active Withdrawn
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2022
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- 2023-11-22 JP JP2023197829A patent/JP2024015008A/ja active Pending
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WO2013094772A1 (en) | 2013-06-27 |
JP2020145478A (ja) | 2020-09-10 |
JP2018137468A (ja) | 2018-08-30 |
JP6714130B2 (ja) | 2020-06-24 |
CN109065630B (zh) | 2021-07-06 |
US8796683B2 (en) | 2014-08-05 |
JP2013149965A (ja) | 2013-08-01 |
CN109065630A (zh) | 2018-12-21 |
CN113421928A (zh) | 2021-09-21 |
CN103999228A (zh) | 2014-08-20 |
CN103999228B (zh) | 2018-07-03 |
US9559213B2 (en) | 2017-01-31 |
TW201727912A (zh) | 2017-08-01 |
US9166061B2 (en) | 2015-10-20 |
KR20140107451A (ko) | 2014-09-04 |
JP7392068B2 (ja) | 2023-12-05 |
TWI580047B (zh) | 2017-04-21 |
JP2024015008A (ja) | 2024-02-01 |
JP2019192930A (ja) | 2019-10-31 |
US20130161608A1 (en) | 2013-06-27 |
KR102106030B1 (ko) | 2020-04-29 |
TW201336077A (zh) | 2013-09-01 |
US20160005878A1 (en) | 2016-01-07 |
US20140339555A1 (en) | 2014-11-20 |
JP2022171915A (ja) | 2022-11-11 |
JP2017017345A (ja) | 2017-01-19 |
TWI613824B (zh) | 2018-02-01 |
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