KR920007135A - 반도체 장치용 리드프레임 - Google Patents

반도체 장치용 리드프레임 Download PDF

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Publication number
KR920007135A
KR920007135A KR1019910015472A KR910015472A KR920007135A KR 920007135 A KR920007135 A KR 920007135A KR 1019910015472 A KR1019910015472 A KR 1019910015472A KR 910015472 A KR910015472 A KR 910015472A KR 920007135 A KR920007135 A KR 920007135A
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KR
South Korea
Prior art keywords
film
semiconductor device
lead frame
leadframes
semiconductor devices
Prior art date
Application number
KR1019910015472A
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English (en)
Inventor
노리오 와까바야시
아끼히꼬 무라따
Original Assignee
이노우에 사다오
신꼬오 덴기 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이노우에 사다오, 신꼬오 덴기 고오교오 가부시끼가이샤 filed Critical 이노우에 사다오
Publication of KR920007135A publication Critical patent/KR920007135A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

내용 없음

Description

반도체 장치용 리드프레임
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 리드프레임의 설명도.
제2도는 아우터리드의 단면도.

Claims (4)

  1. 소재위 전체면에 직접 또는 하지피막을 거쳐서 Pd 또는 Pd합금피막을 형성하고 적어도 아우터리드위의 상기 Pd 또는 Pd 합금피막에 Ag 도금피막을 얇게 형성한 것을 특징으로 하는 반도체장치용 리드 프레임.
  2. 제1항에 있어서 Ag도금피막 두께가 단원자층~0.1㎛의 얇은 두께인 것을 특징으로 하는 반도체장치용 리드 프레임.
  3. 소재위 전체면에 직접 또는 하지피막을 거쳐서 Pd 또는 Pd합금피막을 형성하고 적어도 아우터리드위의 상기 Pd 또는 Pd 합금피막위에 Ag 도금피막을 얇게 형성한 것을 특징으로 하는 반도체장치용 리드 프레임.
  4. 제3항에 있어서, 상기 Au도금피막의 두께가 단원자층~0.1㎛의 얇은 두께인 것을 특징으로 하는 반도체 장치용 리드 프레임.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910015472A 1990-09-05 1991-09-05 반도체 장치용 리드프레임 KR920007135A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2234833A JP2543619B2 (ja) 1990-09-05 1990-09-05 半導体装置用リ―ドフレ―ム
JP1990-234833 1990-09-05

Publications (1)

Publication Number Publication Date
KR920007135A true KR920007135A (ko) 1992-04-28

Family

ID=16977093

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015472A KR920007135A (ko) 1990-09-05 1991-09-05 반도체 장치용 리드프레임

Country Status (3)

Country Link
EP (1) EP0474499A3 (ko)
JP (1) JP2543619B2 (ko)
KR (1) KR920007135A (ko)

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JPH06260577A (ja) * 1993-03-08 1994-09-16 Nec Corp 配線電極の被膜構造
US5360991A (en) * 1993-07-29 1994-11-01 At&T Bell Laboratories Integrated circuit devices with solderable lead frame
KR960039315A (ko) * 1995-04-06 1996-11-25 이대원 리드프레임 제조방법
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
JPH09232493A (ja) * 1995-12-20 1997-09-05 Seiichi Serizawa リードフレーム
US6521358B1 (en) 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
TW401634B (en) * 1997-04-09 2000-08-11 Sitron Prec Co Ltd Lead frame and its manufacture method
JP3379412B2 (ja) * 1997-05-30 2003-02-24 松下電器産業株式会社 パラジウムめっき液とこれを用いたパラジウムめっき皮膜及びこのパラジウムめっき皮膜を有する半導体装置用リードフレーム
JPH11204713A (ja) * 1998-01-09 1999-07-30 Sony Corp 半導体装置用リードフレーム及び半導体装置
JP3492554B2 (ja) 1999-05-07 2004-02-03 ニシハラ理工株式会社 Ｐｂに代わる接合材料の機能合金メッキ及びその機能合金メッキを施した被実装用電子部品材料
KR101038491B1 (ko) * 2004-04-16 2011-06-01 삼성테크윈 주식회사 리드프레임 및 그 제조 방법
JP2005314749A (ja) * 2004-04-28 2005-11-10 Shinei Hitec:Kk 電子部品及びその表面処理方法
US20070272441A1 (en) * 2004-05-25 2007-11-29 Shinko Electric Industries Co., Ltd. Palladium-Plated Lead Finishing Structure For Semiconductor Part And Method Of Producing Semiconductor Device
WO2005117112A1 (ja) 2004-05-27 2005-12-08 Shinko Electric Industries Co., Ltd. 半導体装置用リードフレーム
JP2006083409A (ja) * 2004-09-14 2006-03-30 Shinei Hitec:Kk 鉄合金電子部品およびその表面処理方法
JP2006083410A (ja) * 2004-09-14 2006-03-30 Shinei Hitec:Kk 電子部品の製造方法
US7125750B2 (en) 2004-11-22 2006-10-24 Asm Assembly Materials Ltd. Leadframe with enhanced encapsulation adhesion
JP2006269903A (ja) 2005-03-25 2006-10-05 Shinko Electric Ind Co Ltd 半導体装置用リードフレーム
JP4817043B2 (ja) * 2005-08-30 2011-11-16 日立金属株式会社 セラミクス基板およびセラミクス基板を用いた電子部品とセラミクス基板の製造方法
WO2007034921A1 (ja) * 2005-09-22 2007-03-29 Enplas Corporation 電気接触子及び電気部品用ソケット
JP4820616B2 (ja) 2005-10-20 2011-11-24 パナソニック株式会社 リードフレーム
JP2007217798A (ja) * 2007-05-23 2007-08-30 Shinei Hitec:Kk コネクタ用接続端子の表面処理方法
JP5210907B2 (ja) * 2009-02-03 2013-06-12 アルプス電気株式会社 電気接点の製造方法
JP5762081B2 (ja) * 2011-03-29 2015-08-12 新光電気工業株式会社 リードフレーム及び半導体装置
CN108026657B (zh) 2015-11-05 2020-05-26 古河电气工业株式会社 引线框材料及其制造方法
US20180053714A1 (en) * 2016-08-18 2018-02-22 Rohm And Haas Electronic Materials Llc Multi-layer electrical contact element
CN109937479B (zh) 2016-12-27 2023-01-13 古河电气工业株式会社 引线框材料及其制造方法以及半导体封装件
JP2024035349A (ja) 2022-09-02 2024-03-14 株式会社三井ハイテック 金属部品

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JPH01244653A (ja) * 1988-03-25 1989-09-29 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JP2543619B2 (ja) 1996-10-16
EP0474499A2 (en) 1992-03-11
JPH04115558A (ja) 1992-04-16
EP0474499A3 (en) 1993-03-10

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