EP1091617A3 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
EP1091617A3
EP1091617A3 EP00308744A EP00308744A EP1091617A3 EP 1091617 A3 EP1091617 A3 EP 1091617A3 EP 00308744 A EP00308744 A EP 00308744A EP 00308744 A EP00308744 A EP 00308744A EP 1091617 A3 EP1091617 A3 EP 1091617A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor substrate
electrode layer
electronic circuit
semiconductor device
fixed electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00308744A
Other languages
German (de)
French (fr)
Other versions
EP1091617A2 (en
Inventor
Shigeaki Okawa
Toshiyuki Ohkoda
Yoshiaki Ohbayashi
Mamoru Yasuda
Shinichi Saeki
Shuji Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hosiden Corp
Sanyo Electric Co Ltd
Original Assignee
Hosiden Corp
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hosiden Corp, Sanyo Electric Co Ltd filed Critical Hosiden Corp
Publication of EP1091617A2 publication Critical patent/EP1091617A2/en
Publication of EP1091617A3 publication Critical patent/EP1091617A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones

Abstract

A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.
EP00308744A 1999-10-04 2000-10-04 Semiconductor device Withdrawn EP1091617A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28254499 1999-10-04
JP28254499A JP3478768B2 (en) 1999-10-04 1999-10-04 Semiconductor device

Publications (2)

Publication Number Publication Date
EP1091617A2 EP1091617A2 (en) 2001-04-11
EP1091617A3 true EP1091617A3 (en) 2004-10-20

Family

ID=17653862

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00308744A Withdrawn EP1091617A3 (en) 1999-10-04 2000-10-04 Semiconductor device

Country Status (6)

Country Link
US (1) US6417560B1 (en)
EP (1) EP1091617A3 (en)
JP (1) JP3478768B2 (en)
KR (1) KR100351600B1 (en)
CN (1) CN1175710C (en)
TW (1) TW498697B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3445536B2 (en) * 1999-10-04 2003-09-08 三洋電機株式会社 Semiconductor device
JP3940679B2 (en) * 2003-01-16 2007-07-04 シチズン電子株式会社 Electret condenser microphone
JP4099672B2 (en) * 2004-12-21 2008-06-11 セイコーエプソン株式会社 Semiconductor device
EP1921892A4 (en) * 2005-08-30 2012-04-11 Yamaha Corp Capacitor microphone and method for manufacturing capacitor microphone
US8530985B2 (en) * 2010-03-18 2013-09-10 Chia-Ming Cheng Chip package and method for forming the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993072A (en) * 1989-02-24 1991-02-12 Lectret S.A. Shielded electret transducer and method of making the same
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
DE19839978A1 (en) * 1997-09-03 1999-03-18 Hosiden Corp Sound measurement transducer for semiconducting electret microphone for portable telephone

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1188992A (en) 1997-09-03 1999-03-30 Hosiden Corp Integrated capacitive transducer and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US4993072A (en) * 1989-02-24 1991-02-12 Lectret S.A. Shielded electret transducer and method of making the same
DE19839978A1 (en) * 1997-09-03 1999-03-18 Hosiden Corp Sound measurement transducer for semiconducting electret microphone for portable telephone

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VAN STEENKISTE F ET AL: "CMOS-based sensors and actuators", ASIC CONFERENCE 1998. PROCEEDINGS. ELEVENTH ANNUAL IEEE INTERNATIONAL ROCHESTER, NY, USA 13-16 SEPT. 1998, NEW YORK, NY, USA,IEEE, US, 13 September 1998 (1998-09-13), pages 393 - 397, XP010309708, ISBN: 0-7803-4980-6 *

Also Published As

Publication number Publication date
KR20010070119A (en) 2001-07-25
JP3478768B2 (en) 2003-12-15
JP2001112095A (en) 2001-04-20
US6417560B1 (en) 2002-07-09
EP1091617A2 (en) 2001-04-11
CN1291065A (en) 2001-04-11
CN1175710C (en) 2004-11-10
TW498697B (en) 2002-08-11
KR100351600B1 (en) 2002-09-05

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