KR930009046A - 리드프레임 - Google Patents

리드프레임 Download PDF

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Publication number
KR930009046A
KR930009046A KR1019920018712A KR920018712A KR930009046A KR 930009046 A KR930009046 A KR 930009046A KR 1019920018712 A KR1019920018712 A KR 1019920018712A KR 920018712 A KR920018712 A KR 920018712A KR 930009046 A KR930009046 A KR 930009046A
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KR
South Korea
Prior art keywords
plating layer
iron
nickel
cobalt
lead frame
Prior art date
Application number
KR1019920018712A
Other languages
English (en)
Inventor
아끼히꼬 무라따
니리오 와까바야시
Original Assignee
이노우에 사다오
신꼬오 덴기 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이노우에 사다오, 신꼬오 덴기 고오교오 가부시끼가이샤 filed Critical 이노우에 사다오
Publication of KR930009046A publication Critical patent/KR930009046A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

철 또는 철을 주성분으로 하는 소재를 사용하여 전면에 얇은 귀금속 도금을 행한 것에 있어서 내식성이 우수한 리드프레임을 제공하는 것이다. 철 또는 철을 주성분으로 하는 금속으로 된 소재의 전면에 1㎛이하의 두께의 귀금속 도금층을 형성하여 된 리드프레임에 있어서, 소재(10)위에 동 또는 동합금 도금층으로 된 제1 도금층(12)을 형성하고 이 제1 도금층(12)위에 니켈, 코발트 또는 니켈-코발트층으로 된 제2 도금층(14)을 형성하고 이 제2 도금층(14)위에 상기 귀금속 도금층(16)을 형성한 것을 특징으로 한다.

Description

리드프레임
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 리드프레임의 단면도

Claims (2)

  1. 철 또는 철을 주성분으로 하는 금속으로 된 소재의 전면에 1㎛이하의 두께의 귀금속 도금층을 형성하여 된 리드프레임에 있어서, 상기 소재위에 동 또는 동합금 도금층으로 된 제1 도금층을 형성하고 이 제1 도금층위에 니켈, 코발트 또는 니켈-코발트층으로 된 제2 도금층을 형성하고 이 제2 도금층위에 상기 귀금속 도금층을 형성한 것을 특징으로 하는 리드프레임.
  2. 제1항에 있어서, 상기 귀금속 도금층이 파라듐 도금층인 것을 특징으로 하는 리드프레임.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920018712A 1991-10-17 1992-10-12 리드프레임 KR930009046A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-298219 1991-10-17
JP3298219A JPH05109958A (ja) 1991-10-17 1991-10-17 リードフレーム

Publications (1)

Publication Number Publication Date
KR930009046A true KR930009046A (ko) 1993-05-22

Family

ID=17856767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920018712A KR930009046A (ko) 1991-10-17 1992-10-12 리드프레임

Country Status (3)

Country Link
EP (1) EP0538019A2 (ko)
JP (1) JPH05109958A (ko)
KR (1) KR930009046A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100254271B1 (ko) * 1997-08-04 2000-05-01 유무성 다층 도금 리이드 프레임

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3693300B2 (ja) * 1993-09-03 2005-09-07 日本特殊陶業株式会社 半導体パッケージの外部接続端子及びその製造方法
US5436082A (en) * 1993-12-27 1995-07-25 National Semiconductor Corporation Protective coating combination for lead frames
US5728285A (en) * 1993-12-27 1998-03-17 National Semiconductor Corporation Protective coating combination for lead frames
US5650661A (en) * 1993-12-27 1997-07-22 National Semiconductor Corporation Protective coating combination for lead frames
US6140703A (en) * 1996-08-05 2000-10-31 Motorola, Inc. Semiconductor metallization structure
KR20100103015A (ko) * 2009-03-12 2010-09-27 엘지이노텍 주식회사 리드 프레임 및 그 제조방법
US10366946B2 (en) 2017-10-30 2019-07-30 Infineon Technologies Ag Connection member with bulk body and electrically and thermally conductive coating
CN110265376A (zh) 2018-03-12 2019-09-20 意法半导体股份有限公司 引线框架表面精整
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141029A (en) * 1977-12-30 1979-02-20 Texas Instruments Incorporated Integrated circuit device
DE3312713A1 (de) * 1983-04-08 1984-10-11 The Furukawa Electric Co., Ltd., Tokio/Tokyo Silberbeschichtete elektrische materialien und verfahren zu ihrer herstellung
JPS607157A (ja) * 1983-06-25 1985-01-14 Masami Kobayashi Ｉｃ用リ−ドフレ−ム
EP0384586A3 (en) * 1989-02-22 1991-03-06 Texas Instruments Incorporated High reliability plastic package for integrated circuits
JPH02222567A (ja) * 1989-02-23 1990-09-05 Hitachi Cable Ltd リードフレーム
JPH03225947A (ja) * 1990-01-31 1991-10-04 Shinko Electric Ind Co Ltd リードフレーム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100254271B1 (ko) * 1997-08-04 2000-05-01 유무성 다층 도금 리이드 프레임

Also Published As

Publication number Publication date
EP0538019A3 (ko) 1994-03-09
JPH05109958A (ja) 1993-04-30
EP0538019A2 (en) 1993-04-21

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