KR20170016014A - 액침 리소그래피에 의한 광학기기의 세정방법 - Google Patents
액침 리소그래피에 의한 광학기기의 세정방법 Download PDFInfo
- Publication number
- KR20170016014A KR20170016014A KR1020177002557A KR20177002557A KR20170016014A KR 20170016014 A KR20170016014 A KR 20170016014A KR 1020177002557 A KR1020177002557 A KR 1020177002557A KR 20177002557 A KR20177002557 A KR 20177002557A KR 20170016014 A KR20170016014 A KR 20170016014A
- Authority
- KR
- South Korea
- Prior art keywords
- optical element
- cleaning
- liquid
- immersion
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46255603P | 2003-04-11 | 2003-04-11 | |
| US60/462,556 | 2003-04-11 | ||
| US48291303P | 2003-06-27 | 2003-06-27 | |
| US60/482,913 | 2003-06-27 | ||
| PCT/US2004/010309 WO2004093130A2 (en) | 2003-04-11 | 2004-04-02 | Cleanup method for optics in immersion lithography |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157002109A Division KR101753496B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197001257A Division KR20190007532A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170016014A true KR20170016014A (ko) | 2017-02-10 |
Family
ID=33303091
Family Applications (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177002557A Ceased KR20170016014A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020127025016A Expired - Fee Related KR101318542B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117018576A Expired - Fee Related KR101324818B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020147005470A Expired - Fee Related KR101597475B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020157002109A Expired - Fee Related KR101753496B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
| KR1020197001257A Ceased KR20190007532A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117024887A Expired - Fee Related KR101508810B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117022193A Expired - Fee Related KR101508809B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020137013978A Expired - Fee Related KR101525335B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020127014420A Expired - Fee Related KR101289959B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020057019365A Expired - Fee Related KR101342824B1 (ko) | 2003-04-11 | 2005-10-11 | 액침 리소그래피에 의한 광학기기의 세정방법 |
Family Applications After (10)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127025016A Expired - Fee Related KR101318542B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117018576A Expired - Fee Related KR101324818B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020147005470A Expired - Fee Related KR101597475B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020157002109A Expired - Fee Related KR101753496B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피 장치 및 액침 리소그래피 장치에 사용되는 세정 방법 |
| KR1020197001257A Ceased KR20190007532A (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117024887A Expired - Fee Related KR101508810B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020117022193A Expired - Fee Related KR101508809B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020137013978A Expired - Fee Related KR101525335B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020127014420A Expired - Fee Related KR101289959B1 (ko) | 2003-04-11 | 2004-04-02 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR1020057019365A Expired - Fee Related KR101342824B1 (ko) | 2003-04-11 | 2005-10-11 | 액침 리소그래피에 의한 광학기기의 세정방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (10) | US7522259B2 (https=) |
| EP (6) | EP2166413A1 (https=) |
| JP (10) | JP4837556B2 (https=) |
| KR (11) | KR20170016014A (https=) |
| CN (4) | CN106444292A (https=) |
| AT (1) | ATE449982T1 (https=) |
| DE (1) | DE602004024295D1 (https=) |
| SG (5) | SG2013077797A (https=) |
| WO (1) | WO2004093130A2 (https=) |
Families Citing this family (227)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| CN101872135B (zh) | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
| EP1571695A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE |
| AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| EP2466621B1 (en) | 2003-02-26 | 2015-04-01 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR101181688B1 (ko) | 2003-03-25 | 2012-09-19 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
| KR101177330B1 (ko) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치 |
| EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| WO2004090634A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| KR101159564B1 (ko) | 2003-04-11 | 2012-06-25 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법 |
| KR20170016014A (ko) | 2003-04-11 | 2017-02-10 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN100437358C (zh) | 2003-05-15 | 2008-11-26 | 株式会社尼康 | 曝光装置及器件制造方法 |
| TWI421911B (zh) | 2003-05-23 | 2014-01-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
| TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| CN100541717C (zh) | 2003-05-28 | 2009-09-16 | 株式会社尼康 | 曝光方法、曝光装置以及器件制造方法 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2261742A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
| US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101520591B1 (ko) | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| TWI515770B (zh) | 2003-06-19 | 2016-01-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
| EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| EP2466382B1 (en) | 2003-07-08 | 2014-11-26 | Nikon Corporation | Wafer table for immersion lithography |
| ATE513309T1 (de) | 2003-07-09 | 2011-07-15 | Nikon Corp | Belichtungsvorrichtung und verfahren zur bauelementeherstellung |
| WO2005006416A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 結合装置、露光装置、及びデバイス製造方法 |
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