KR20160063402A - 디스플레이 장치 - Google Patents

디스플레이 장치 Download PDF

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Publication number
KR20160063402A
KR20160063402A KR1020167012664A KR20167012664A KR20160063402A KR 20160063402 A KR20160063402 A KR 20160063402A KR 1020167012664 A KR1020167012664 A KR 1020167012664A KR 20167012664 A KR20167012664 A KR 20167012664A KR 20160063402 A KR20160063402 A KR 20160063402A
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South Korea
Prior art keywords
layer
thin film
film
film transistor
electrode layer
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Ceased
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KR1020167012664A
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English (en)
Korean (ko)
Inventor
슌뻬이 야마자끼
？뻬이 야마자끼
겐고 아끼모또
시게끼 고모리
히데끼 우오찌
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20160063402A publication Critical patent/KR20160063402A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/7869—
    • H01L27/1225—
    • H01L29/06—
    • H01L29/45—
    • H01L29/66742—
    • H01L29/78606—
    • H01L29/78618—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Bipolar Transistors (AREA)
KR1020167012664A 2008-09-12 2009-08-21 디스플레이 장치 Ceased KR20160063402A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008234603 2008-09-12
JPJP-P-2008-234603 2008-09-12
PCT/JP2009/065018 WO2010029859A1 (en) 2008-09-12 2009-08-21 Semiconductor device and method for manufacturing the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117008275A Division KR101623224B1 (ko) 2008-09-12 2009-08-21 반도체 장치 및 반도체 장치의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177005751A Division KR101812935B1 (ko) 2008-09-12 2009-08-21 디스플레이 장치

Publications (1)

Publication Number Publication Date
KR20160063402A true KR20160063402A (ko) 2016-06-03

Family

ID=42005117

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020167012664A Ceased KR20160063402A (ko) 2008-09-12 2009-08-21 디스플레이 장치
KR1020177005751A Active KR101812935B1 (ko) 2008-09-12 2009-08-21 디스플레이 장치
KR1020117008275A Expired - Fee Related KR101623224B1 (ko) 2008-09-12 2009-08-21 반도체 장치 및 반도체 장치의 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020177005751A Active KR101812935B1 (ko) 2008-09-12 2009-08-21 디스플레이 장치
KR1020117008275A Expired - Fee Related KR101623224B1 (ko) 2008-09-12 2009-08-21 반도체 장치 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (4) US9257594B2 (https=)
JP (9) JP2010093238A (https=)
KR (3) KR20160063402A (https=)
TW (6) TWI557867B (https=)
WO (1) WO2010029859A1 (https=)

Families Citing this family (51)

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KR20090013230A (ko) 2006-06-02 2009-02-04 히다치 가세고교 가부시끼가이샤 광반도체소자 탑재용 패키지 및 이것을 이용한 광반도체장치
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101722913B1 (ko) 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101273913B1 (ko) 2008-09-19 2013-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8344387B2 (en) * 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101218090B1 (ko) * 2009-05-27 2013-01-18 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
KR101460869B1 (ko) * 2009-09-04 2014-11-11 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101820973B1 (ko) * 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR20130130879A (ko) 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR101747158B1 (ko) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101876470B1 (ko) 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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TWI615920B (zh) * 2010-08-06 2018-02-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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JP6391917B2 (ja) * 2013-07-03 2018-09-19 株式会社ジャパンディスプレイ 発光素子表示装置及びその製造方法
JP2017201651A (ja) * 2016-05-02 2017-11-09 株式会社神戸製鋼所 酸化物半導体の製造方法
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CN106229347B (zh) * 2016-08-24 2019-06-07 武汉华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制造方法
KR102691132B1 (ko) * 2016-10-31 2024-08-01 엘지디스플레이 주식회사 액정표시장치
CN110268529A (zh) 2017-02-16 2019-09-20 三菱电机株式会社 薄膜晶体管、薄膜晶体管基板、液晶显示装置以及薄膜晶体管基板的制造方法
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CN110692125B (zh) 2017-05-31 2023-10-27 夏普株式会社 有源矩阵基板及其制造方法
KR102441566B1 (ko) 2017-08-07 2022-09-07 삼성디스플레이 주식회사 발광 장치 및 발광 장치의 제조 방법
CN107768307A (zh) * 2017-11-21 2018-03-06 深圳市华星光电半导体显示技术有限公司 背沟道蚀刻型tft基板及其制作方法
KR102126553B1 (ko) * 2017-12-19 2020-06-24 엘지디스플레이 주식회사 표시 장치
KR102418612B1 (ko) * 2018-01-03 2022-07-08 엘지전자 주식회사 이동 단말기
CN108321152B (zh) * 2018-04-04 2024-10-18 京东方科技集团股份有限公司 指纹识别传感器及其制备方法以及指纹识别设备
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JP2020141001A (ja) * 2019-02-27 2020-09-03 キオクシア株式会社 半導体装置および半導体装置の製造方法
TWI813217B (zh) * 2021-12-09 2023-08-21 友達光電股份有限公司 半導體裝置及其製造方法
KR102749453B1 (ko) * 2022-06-21 2024-12-31 국민대학교산학협력단 초박형 핀 led 소자 및 이를 포함하는 잉크조성물

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