KR20050018585A - 배선 구조 - Google Patents

배선 구조

Info

Publication number
KR20050018585A
KR20050018585A KR1020040044127A KR20040044127A KR20050018585A KR 20050018585 A KR20050018585 A KR 20050018585A KR 1020040044127 A KR1020040044127 A KR 1020040044127A KR 20040044127 A KR20040044127 A KR 20040044127A KR 20050018585 A KR20050018585 A KR 20050018585A
Authority
KR
South Korea
Prior art keywords
wiring
dummy
film
dielectric constant
wiring structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020040044127A
Other languages
English (en)
Korean (ko)
Inventor
도미따가즈오
하시모또게이지
니시오까야스따까
마쯔모또스스무
세끼구찌미쯔루
이와사끼아끼히사
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
마쯔시다덴기산교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 르네사스 테크놀로지, 마쯔시다덴기산교 가부시키가이샤 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20050018585A publication Critical patent/KR20050018585A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020040044127A 2003-08-12 2004-06-15 배선 구조 Ceased KR20050018585A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00292166 2003-08-12
JP2003292166A JP2005064226A (ja) 2003-08-12 2003-08-12 配線構造

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060096963A Division KR100770486B1 (ko) 2003-08-12 2006-10-02 반도체 장치의 제조방법

Publications (1)

Publication Number Publication Date
KR20050018585A true KR20050018585A (ko) 2005-02-23

Family

ID=34131700

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020040044127A Ceased KR20050018585A (ko) 2003-08-12 2004-06-15 배선 구조
KR1020060096963A Expired - Fee Related KR100770486B1 (ko) 2003-08-12 2006-10-02 반도체 장치의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020060096963A Expired - Fee Related KR100770486B1 (ko) 2003-08-12 2006-10-02 반도체 장치의 제조방법

Country Status (6)

Country Link
US (2) US20050035457A1 (https=)
JP (1) JP2005064226A (https=)
KR (2) KR20050018585A (https=)
CN (1) CN1581475B (https=)
DE (1) DE102004028925A1 (https=)
TW (1) TWI315542B (https=)

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KR20170066908A (ko) * 2015-12-07 2017-06-15 삼성전자주식회사 배선 구조물, 배선 구조물 설계 방법, 및 배선 구조물 형성 방법

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JPWO2006061871A1 (ja) * 2004-12-06 2008-06-05 富士通株式会社 半導体装置
US7545045B2 (en) * 2005-03-24 2009-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy via for reducing proximity effect and method of using the same
JP5230061B2 (ja) * 2005-07-25 2013-07-10 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
CN1988146A (zh) * 2005-12-22 2007-06-27 中芯国际集成电路制造(上海)有限公司 哑元图案和机械增强低k介电材料的制造方法
US20070287279A1 (en) * 2006-06-08 2007-12-13 Daubenspeck Timothy H Methods of forming solder connections and structure thereof
JP4825060B2 (ja) * 2006-06-14 2011-11-30 富士通セミコンダクター株式会社 露光方法
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US7951704B2 (en) * 2008-05-06 2011-05-31 Spansion Llc Memory device peripheral interconnects and method of manufacturing
US8669597B2 (en) 2008-05-06 2014-03-11 Spansion Llc Memory device interconnects and method of manufacturing
US8624398B2 (en) * 2009-08-26 2014-01-07 United Microelectronics Corp. Semiconductor circuit structure
JP2012148428A (ja) * 2011-01-17 2012-08-09 Toshiba Tec Corp インクジェットヘッドの製造方法
US8847393B2 (en) * 2011-02-28 2014-09-30 Freescale Semiconductor, Inc. Vias between conductive layers to improve reliability
CN102437105B (zh) * 2011-11-28 2014-08-13 上海华力微电子有限公司 具有部分冗余通孔的集成电路制作方法及集成电路
US20130155636A1 (en) * 2011-12-16 2013-06-20 Changyok Park Dummy through-silicon via capacitor
US8883638B2 (en) * 2012-01-18 2014-11-11 United Microelectronics Corp. Method for manufacturing damascene structure involving dummy via holes
US8629559B2 (en) * 2012-02-09 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stress reduction apparatus with an inverted cup-shaped layer
US9343411B2 (en) * 2013-01-29 2016-05-17 Intel Corporation Techniques for enhancing fracture resistance of interconnects
FR3003962B1 (fr) * 2013-03-29 2016-07-22 St Microelectronics Rousset Procede d'elaboration d'un masque de photolitographie destine a la formation de contacts, masque et circuit integre correspondants
US9659860B2 (en) 2013-08-21 2017-05-23 Intel Corporation Method and structure to contact tight pitch conductive layers with guided vias
US9054164B1 (en) 2013-12-23 2015-06-09 Intel Corporation Method of forming high density, high shorting margin, and low capacitance interconnects by alternating recessed trenches
US9831214B2 (en) * 2014-06-18 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
US10177032B2 (en) * 2014-06-18 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Devices, packaging devices, and methods of packaging semiconductor devices
KR102326120B1 (ko) 2015-06-29 2021-11-15 삼성전자주식회사 배선 구조물 및 그 형성 방법, 및 상기 배선 구조물을 갖는 반도체 장치
KR102382826B1 (ko) 2015-09-08 2022-04-04 삼성전자주식회사 반도체 장치의 제조 방법
US20190109090A1 (en) * 2017-08-15 2019-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnection structure lined by isolation layer
US11705395B2 (en) * 2018-06-25 2023-07-18 Intel Corporation Core fill to reduce dishing and metal pillar fill to increase metal density of interconnects
KR102866394B1 (ko) 2020-07-01 2025-09-29 삼성전자주식회사 3차원 반도체 메모리 장치
US12593668B2 (en) * 2022-06-15 2026-03-31 International Business Machines Corporation Shallow and deep contacts with stitching

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JPH11307633A (ja) * 1997-11-17 1999-11-05 Sony Corp 低誘電率膜を有する半導体装置、およびその製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170066908A (ko) * 2015-12-07 2017-06-15 삼성전자주식회사 배선 구조물, 배선 구조물 설계 방법, 및 배선 구조물 형성 방법

Also Published As

Publication number Publication date
JP2005064226A (ja) 2005-03-10
US20070007658A1 (en) 2007-01-11
TW200507010A (en) 2005-02-16
CN1581475B (zh) 2010-05-26
DE102004028925A1 (de) 2005-04-28
KR100770486B1 (ko) 2007-10-25
US20050035457A1 (en) 2005-02-17
CN1581475A (zh) 2005-02-16
US7605085B2 (en) 2009-10-20
TWI315542B (en) 2009-10-01
KR20060108601A (ko) 2006-10-18

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