KR102719982B1 - 3차원 nor 메모리 어레이 아키텍처 및 그의 제조 방법 - Google Patents
3차원 nor 메모리 어레이 아키텍처 및 그의 제조 방법 Download PDFInfo
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- KR102719982B1 KR102719982B1 KR1020207000747A KR20207000747A KR102719982B1 KR 102719982 B1 KR102719982 B1 KR 102719982B1 KR 1020207000747 A KR1020207000747 A KR 1020207000747A KR 20207000747 A KR20207000747 A KR 20207000747A KR 102719982 B1 KR102719982 B1 KR 102719982B1
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762522666P | 2017-06-20 | 2017-06-20 | |
| US201762522661P | 2017-06-20 | 2017-06-20 | |
| US201762522665P | 2017-06-20 | 2017-06-20 | |
| US62/522,661 | 2017-06-20 | ||
| US62/522,665 | 2017-06-20 | ||
| US62/522,666 | 2017-06-20 | ||
| US201762550553P | 2017-08-25 | 2017-08-25 | |
| US62/550,553 | 2017-08-25 | ||
| PCT/US2018/038373 WO2018236937A1 (en) | 2017-06-20 | 2018-06-19 | 3-dimensional nor memory array architecture and methods for fabrication thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200015743A KR20200015743A (ko) | 2020-02-12 |
| KR102719982B1 true KR102719982B1 (ko) | 2024-10-22 |
Family
ID=64658316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207000747A Active KR102719982B1 (ko) | 2017-06-20 | 2018-06-19 | 3차원 nor 메모리 어레이 아키텍처 및 그의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US10608011B2 (enExample) |
| EP (1) | EP3642841A4 (enExample) |
| JP (1) | JP7203054B2 (enExample) |
| KR (1) | KR102719982B1 (enExample) |
| CN (1) | CN111033625B (enExample) |
| WO (1) | WO2018236937A1 (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9892800B2 (en) | 2015-09-30 | 2018-02-13 | Sunrise Memory Corporation | Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates |
| US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
| US9842651B2 (en) | 2015-11-25 | 2017-12-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin film transistor strings |
| US10121553B2 (en) | 2015-09-30 | 2018-11-06 | Sunrise Memory Corporation | Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays |
| WO2018236937A1 (en) * | 2017-06-20 | 2018-12-27 | Sunrise Memory Corporation | 3-dimensional nor memory array architecture and methods for fabrication thereof |
| US10608008B2 (en) | 2017-06-20 | 2020-03-31 | Sunrise Memory Corporation | 3-dimensional nor strings with segmented shared source regions |
| US10692874B2 (en) | 2017-06-20 | 2020-06-23 | Sunrise Memory Corporation | 3-dimensional NOR string arrays in segmented stacks |
| US11180861B2 (en) | 2017-06-20 | 2021-11-23 | Sunrise Memory Corporation | 3-dimensional NOR string arrays in segmented stacks |
| US10431596B2 (en) * | 2017-08-28 | 2019-10-01 | Sunrise Memory Corporation | Staggered word line architecture for reduced disturb in 3-dimensional NOR memory arrays |
| US10896916B2 (en) | 2017-11-17 | 2021-01-19 | Sunrise Memory Corporation | Reverse memory cell |
| WO2019133534A1 (en) | 2017-12-28 | 2019-07-04 | Sunrise Memory Corporation | 3-dimensional nor memory array with very fine pitch: device and method |
| US10475812B2 (en) | 2018-02-02 | 2019-11-12 | Sunrise Memory Corporation | Three-dimensional vertical NOR flash thin-film transistor strings |
| US11751391B2 (en) | 2018-07-12 | 2023-09-05 | Sunrise Memory Corporation | Methods for fabricating a 3-dimensional memory structure of nor memory strings |
| CN112567516B (zh) | 2018-07-12 | 2025-02-25 | 日升存储公司 | 三维nor存储器阵列的制造方法 |
| TWI713195B (zh) | 2018-09-24 | 2020-12-11 | 美商森恩萊斯記憶體公司 | 三維ｎｏｒ記憶電路製程中之晶圓接合及其形成之積體電路 |
| KR102666113B1 (ko) * | 2018-10-08 | 2024-05-17 | 삼성전자주식회사 | 3차원 반도체 메모리 소자 |
| CN113169041B (zh) | 2018-12-07 | 2024-04-09 | 日升存储公司 | 形成多层垂直nor型存储器串阵列的方法 |
| US11670620B2 (en) | 2019-01-30 | 2023-06-06 | Sunrise Memory Corporation | Device with embedded high-bandwidth, high-capacity memory using wafer bonding |
| EP3925004A4 (en) | 2019-02-11 | 2023-03-08 | Sunrise Memory Corporation | VERTICAL THIN FILM TRANSISTOR AND USE AS BITLINE CONNECTOR FOR THREE DIMENSIONAL MEMORY ARRANGEMENTS |
| TWI743784B (zh) * | 2019-05-17 | 2021-10-21 | 美商森恩萊斯記憶體公司 | 形成三維水平ｎｏｒ記憶陣列之製程 |
| CN114026676B (zh) * | 2019-07-09 | 2023-05-26 | 日升存储公司 | 水平反或型存储器串的三维阵列制程 |
| US11917821B2 (en) | 2019-07-09 | 2024-02-27 | Sunrise Memory Corporation | Process for a 3-dimensional array of horizontal nor-type memory strings |
| CN113302738B (zh) * | 2019-09-10 | 2024-02-09 | 铠侠股份有限公司 | 存储器装置 |
| CN110800106B (zh) | 2019-09-29 | 2021-01-29 | 长江存储科技有限责任公司 | 具有外延生长的半导体沟道的三维存储器件及其形成方法 |
| US11515309B2 (en) | 2019-12-19 | 2022-11-29 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array |
| TWI767512B (zh) | 2020-01-22 | 2022-06-11 | 美商森恩萊斯記憶體公司 | 薄膜儲存電晶體中冷電子抹除 |
| US11675500B2 (en) | 2020-02-07 | 2023-06-13 | Sunrise Memory Corporation | High capacity memory circuit with low effective latency |
| WO2021158994A1 (en) * | 2020-02-07 | 2021-08-12 | Sunrise Memory Corporation | Quasi-volatile system-level memory |
| WO2021173209A1 (en) | 2020-02-24 | 2021-09-02 | Sunrise Memory Corporation | High capacity memory module including wafer-section memory circuit |
| US11561911B2 (en) | 2020-02-24 | 2023-01-24 | Sunrise Memory Corporation | Channel controller for shared memory access |
| US11507301B2 (en) | 2020-02-24 | 2022-11-22 | Sunrise Memory Corporation | Memory module implementing memory centric architecture |
| US20230143057A1 (en) * | 2020-03-04 | 2023-05-11 | Lam Research Corporation | Protection of channel layer in three-terminal vertical memory structure |
| US11315893B2 (en) * | 2020-03-25 | 2022-04-26 | Nanya Technology Corporation | Semiconductor device with composite connection structure and method for fabricating the same |
| US11705496B2 (en) | 2020-04-08 | 2023-07-18 | Sunrise Memory Corporation | Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional NOR memory string array |
| CN113345905B (zh) * | 2020-06-05 | 2024-04-30 | 长江存储科技有限责任公司 | 三维存储器件中的阶梯结构及用于形成其的方法 |
| CN111681687B (zh) | 2020-06-11 | 2023-08-08 | 武汉新芯集成电路制造有限公司 | 一种半导体结构 |
| US12058867B2 (en) | 2020-06-18 | 2024-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device |
| TW202220191A (zh) | 2020-07-21 | 2022-05-16 | 美商日升存儲公司 | 用於製造nor記憶體串之3維記憶體結構之方法 |
| US11069410B1 (en) * | 2020-08-05 | 2021-07-20 | Sandisk Technologies Llc | Three-dimensional NOR-NAND combination memory device and method of making the same |
| US11937424B2 (en) | 2020-08-31 | 2024-03-19 | Sunrise Memory Corporation | Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same |
| JP2022049543A (ja) * | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 半導体記憶装置 |
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