EP3504728A4 - Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays - Google Patents

Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays Download PDF

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Publication number
EP3504728A4
EP3504728A4 EP17844550.8A EP17844550A EP3504728A4 EP 3504728 A4 EP3504728 A4 EP 3504728A4 EP 17844550 A EP17844550 A EP 17844550A EP 3504728 A4 EP3504728 A4 EP 3504728A4
Authority
EP
European Patent Office
Prior art keywords
capacitive
film transistor
dimensional arrays
coupled non
transistor strings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17844550.8A
Other languages
German (de)
French (fr)
Other versions
EP3504728A1 (en
Inventor
Eli Harari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunrise Memory Corp
Original Assignee
Sunrise Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/248,420 external-priority patent/US10121553B2/en
Application filed by Sunrise Memory Corp filed Critical Sunrise Memory Corp
Publication of EP3504728A1 publication Critical patent/EP3504728A1/en
Publication of EP3504728A4 publication Critical patent/EP3504728A4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H01L2924/1435—Random access memory [RAM]
    • H01L2924/1443—Non-volatile random-access memory [NVRAM]
EP17844550.8A 2016-08-26 2017-08-25 Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays Pending EP3504728A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/248,420 US10121553B2 (en) 2015-09-30 2016-08-26 Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
PCT/US2017/048768 WO2018039654A1 (en) 2016-08-26 2017-08-25 Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays

Publications (2)

Publication Number Publication Date
EP3504728A1 EP3504728A1 (en) 2019-07-03
EP3504728A4 true EP3504728A4 (en) 2020-09-09

Family

ID=61246301

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17844550.8A Pending EP3504728A4 (en) 2016-08-26 2017-08-25 Capacitive-coupled non-volatile thin-film transistor strings in three dimensional arrays

Country Status (5)

Country Link
EP (1) EP3504728A4 (en)
JP (2) JP7089505B2 (en)
KR (2) KR102626193B1 (en)
CN (1) CN109863575B (en)
WO (1) WO2018039654A1 (en)

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JP7203054B2 (en) * 2017-06-20 2023-01-12 サンライズ メモリー コーポレイション Three-dimensional NOR-type memory array architecture and method of manufacturing the same
CN113169170A (en) * 2018-12-04 2021-07-23 日升存储公司 Method for forming multi-layer horizontal NOR type thin film memory string
TWI764128B (en) 2019-04-09 2022-05-11 美商森恩萊斯記憶體公司 Quasi-volatile memory device with a back-channel usage
KR20220031033A (en) * 2019-07-09 2022-03-11 선라이즈 메모리 코포레이션 Process for 3D Array of Horizontal NOR-type Memory Strings
CN113302738B (en) * 2019-09-10 2024-02-09 铠侠股份有限公司 Memory device
KR20210036535A (en) * 2019-09-26 2021-04-05 에스케이하이닉스 주식회사 Semiconductor device
US11580038B2 (en) * 2020-02-07 2023-02-14 Sunrise Memory Corporation Quasi-volatile system-level memory
CN111326864B (en) * 2020-03-13 2021-06-18 天津大学 Coupling differential feed double compression mode patch antenna and solar cell integration
JP2021150486A (en) 2020-03-19 2021-09-27 キオクシア株式会社 Semiconductor storage device
US11653500B2 (en) * 2020-06-25 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array contact structures
CN112909015B (en) * 2021-03-08 2023-10-17 中国科学院微电子研究所 NOR type memory device, method of manufacturing the same, and electronic apparatus including the same
KR102429142B1 (en) * 2021-07-22 2022-08-03 란데몬 에스피. 제트 오.오. Method and apparatus for highly effective on-chip true random number generator utilizing beta decay
CN113782070A (en) * 2021-09-02 2021-12-10 西安紫光国芯半导体有限公司 Self-powered nonvolatile programmable chip and storage device
WO2023112236A1 (en) * 2021-12-16 2023-06-22 キオクシア株式会社 Semiconductor memory device
WO2024060021A1 (en) * 2022-09-20 2024-03-28 华为技术有限公司 Three-dimensional memory array, memory, and electronic device

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US20160086970A1 (en) * 2014-09-23 2016-03-24 Haibing Peng Three-dimensional non-volatile nor-type flash memory

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Also Published As

Publication number Publication date
EP3504728A1 (en) 2019-07-03
JP2019526934A (en) 2019-09-19
CN109863575A (en) 2019-06-07
JP7089505B2 (en) 2022-06-22
JP2022123017A (en) 2022-08-23
KR102513489B1 (en) 2023-03-23
CN109863575B (en) 2024-01-30
WO2018039654A1 (en) 2018-03-01
KR20230042417A (en) 2023-03-28
JP7379593B2 (en) 2023-11-14
KR102626193B1 (en) 2024-01-18
WO2018039654A4 (en) 2018-04-19
KR20190057065A (en) 2019-05-27

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