KR102270823B1 - 반도체 장치와 그 제작 방법 - Google Patents

반도체 장치와 그 제작 방법 Download PDF

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KR102270823B1
KR102270823B1 KR1020167009051A KR20167009051A KR102270823B1 KR 102270823 B1 KR102270823 B1 KR 102270823B1 KR 1020167009051 A KR1020167009051 A KR 1020167009051A KR 20167009051 A KR20167009051 A KR 20167009051A KR 102270823 B1 KR102270823 B1 KR 102270823B1
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South Korea
Prior art keywords
film
transistor
oxide semiconductor
insulating film
potential
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KR1020167009051A
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English (en)
Korean (ko)
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KR20160073374A (ko
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요시노리 안도
히데카즈 미야이리
나오토 야마데
아사코 히가
미키 스즈키
요시노리 이에다
야스타카 스즈키
고세이 네이
슌페이 야마자키
šœ페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020217019552A priority Critical patent/KR102436895B1/ko
Publication of KR20160073374A publication Critical patent/KR20160073374A/ko
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    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Optics & Photonics (AREA)
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KR1020167009051A 2013-10-22 2014-10-15 반도체 장치와 그 제작 방법 KR102270823B1 (ko)

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