KR102218724B1 - 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드 - Google Patents

용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드 Download PDF

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KR102218724B1
KR102218724B1 KR1020140024538A KR20140024538A KR102218724B1 KR 102218724 B1 KR102218724 B1 KR 102218724B1 KR 1020140024538 A KR1020140024538 A KR 1020140024538A KR 20140024538 A KR20140024538 A KR 20140024538A KR 102218724 B1 KR102218724 B1 KR 102218724B1
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back plate
face plate
plate
gas
stem
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KR20140108178A (ko
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사브리 모하메드
에드워드 오거스티니아크
더글라스 엘. 케일
람키샨 라오 링엄팰리
칼 리저
코디 바네트
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노벨러스 시스템즈, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140024538A 2013-02-28 2014-02-28 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드 Active KR102218724B1 (ko)

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KR1020210020668A KR102409331B1 (ko) 2013-02-28 2021-02-16 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361770894P 2013-02-28 2013-02-28
US61/770,894 2013-02-28
US13/858,477 2013-04-08
US13/858,477 US9449795B2 (en) 2013-02-28 2013-04-08 Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor

Related Child Applications (1)

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KR1020210020668A Division KR102409331B1 (ko) 2013-02-28 2021-02-16 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드

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KR20140108178A KR20140108178A (ko) 2014-09-05
KR102218724B1 true KR102218724B1 (ko) 2021-02-22

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KR1020140024538A Active KR102218724B1 (ko) 2013-02-28 2014-02-28 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드
KR1020210020668A Active KR102409331B1 (ko) 2013-02-28 2021-02-16 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드
KR1020220070766A Active KR102562923B1 (ko) 2013-02-28 2022-06-10 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드
KR1020230067152A Active KR102662453B1 (ko) 2013-02-28 2023-05-24 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드

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KR1020210020668A Active KR102409331B1 (ko) 2013-02-28 2021-02-16 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드
KR1020220070766A Active KR102562923B1 (ko) 2013-02-28 2022-06-10 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드
KR1020230067152A Active KR102662453B1 (ko) 2013-02-28 2023-05-24 용량성 커플링된 플라즈마 반응기를 위한 무선주파수 전극이 임베디드된 세라믹 샤워헤드

Country Status (6)

Country Link
US (1) US9449795B2 (enExample)
JP (1) JP6552155B2 (enExample)
KR (4) KR102218724B1 (enExample)
CN (1) CN104022008B (enExample)
SG (1) SG2014006449A (enExample)
TW (1) TWI623959B (enExample)

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