CN104022008A - 电容耦合等离子体反应器的有嵌入式rf 电极的陶瓷喷头 - Google Patents
电容耦合等离子体反应器的有嵌入式rf 电极的陶瓷喷头 Download PDFInfo
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Abstract
本发明涉及电容耦合等离子体反应器的有嵌入式RF电极的陶瓷喷头,具体而言,用于衬底处理系统的喷头组件包括连接到气体通道的背板。面板被相邻连接到背板的第一表面且包括气体扩散表面。电极布置在背板和面板之一中且被连接到一或多个导体。气体空间被限定在背板和面板之间且与气体通道流体连通。背板和面板由非金属材料制成。
Description
相关申请交叉参考
本申请要求2013年2月28日提交的、申请号为61/770,894的美国临时申请的权益。前述参考申请的全部公开内容通过参考并入本文。
技术领域
本公开涉及衬底处理系统,特别是涉及衬底处理系统的喷头。
背景技术
此处提供背景技术描述是出于总体上呈现本公开的背景的目的。没有明示或默示地承认在该背景技术部分中所描述的本发明人的工作以及其他在提交时可能不符合现有技术的说明书内容是针对本公开的现有技术。
衬底处理系统通常包括具有一或多个反应容积腔(reaction volume)的处理室。反应容积腔中通常设有基架。诸如半导体晶片之类的衬底被置于基架上。利用喷头将一或多种工艺气体输送到反应容积腔,并可在反应容积腔中点燃等离子体。诸如介电层之类的膜被形成在衬底上。
喷头可被用在电容耦合等离子体(CCP)反应器中。喷头在衬底上方分配工艺气体并作为射频(RF)电极使用以激励等离子体。喷头通常由金属材料制成。金属电极大幅减少或消除了喷头的气体空间(gas plenum)内的电场从而防止喷头内的等离子体形成以及气体的过早激活。
用于CCP反应器的喷头通常由铝制成并包括焊接到主体的面板(face plate)。喷头的面板通常具有多个隔开的气孔以在衬底的暴露表面上方提供均匀的气体分配。RF电压可被施加给喷头、给另一电极(比如基架)、或者给二者。
铝喷头在许多工艺化学品(或者气体组合物)下运行良好。然而,铝与从金属表面提取元素的工艺气体不相容。特别地,基于氯的化学品往往在超过300℃的工作温度下提取铝。作为含氯气体化学侵蚀喷头的金属表面的结果,金属材料可能到达沉积在衬底上的膜中。这对衬底上的器件制造往往是有害的。例如,在某些情况下,金属材料成为可危害集成器件操作的掺杂物。
不希望有的金属污染还可发生在处理室的清洁过程中。因为通常用原子氟清洁,所以面板(喷头的最热区域)与氟反应并形成氟化铝。当氟化铝的厚度随着时间增大,喷头表面的性质(例如,粗糙度、导电性和发射率)改变。结果,沉积工艺可漂移且处于颗粒污染的高风险下。
此外,喷头的设计不允许在喷头被安装在处理室中时清洁喷头的内部(因为它被焊接)。在极端的情况下,面板的气孔内的铝表面的氟化可改变所述孔的直径并改变气流的均匀性。
一些金属材料(比如铝)在较高的温度(400℃之上)变得更软且喷头的面板会开始下垂。这可引起气流和等离子体密度分布的变化。
发明内容
用于衬底处理系统的喷头组件包括连接到气体通道的背板(back plate)。面板(face plate)被相邻连接到背板的第一表面且包括气体扩散表面。电极布置在背板和面板之一中且被连接到一或多个导体。气体空间(gas plenum)被限定在背板和面板之间且与气体通道流体连通。背板和面板由非金属材料制成。
在其它特征中,杆(stem)被连接到背板并限定气体通道。所述一或多个导体穿过所述杆。
在其它特征中,面板的气体扩散表面包括间隔开的孔,所述面板的所述气体扩散表面包括穿孔或者所述面板的所述气体扩散表面是多孔的。
在其它特征中,邻近背板的第二表面布置等离子体抑制结构。背板的第一表面在背板的第二表面的对面。
在其它特征中,等离子体抑制结构包括以间隔关系彼此平行设置的N个板。N是大于1的整数,且所述N个板由介电材料制成。
在其它特征中,等离子体抑制结构包括从所述N个板之一向衬底处理系统的处理室的上表面延伸的轴环。所述轴环由介电材料制成。
在其它特征中,N大于2且所述N个板以均匀的方式间隔。N大于2且所述N个板中的至少一些以不均匀的方式间隔。所述N个板中的至少一个包括多个穿孔。所述N个板中的至少一个包括锯齿表面。所述杆、背板和面板由陶瓷材料制成。所述杆、背板和面板由氮化铝和氧化铝中的至少一者制成。
在其它特征中,面板被连接到背板以允许所述面板相对于所述背板的横向移动,同时保持它们之间的密封。
在其它特征中,挡板被布置在气体通道和气体空间之间。轴环将所述杆连接到衬底处理室的上表面。背板通过紧固件连接到面板。气体空间的高度大小小于预计等离子体鞘厚度的两倍。电极和背板的第一表面之间的第一尺寸小于电极和背板的第二表面之间的第二尺寸。背板的第一表面在背板的第二表面的对面。所述电极是盘形的。
在其它特征中,衬底处理系统包括处理室,处理室包括反应容积腔。喷头组件布置在所述反应容积腔中。基架邻近面板布置在所述反应容积腔中。
在其它特征中,射频(RF)电路被配置来提供具有大于1MHz的频率的RF信号给所述一或多个导体。控制器被配置来控制流到气体通道的工艺气体和控制所述RF电路的操作。
在其它特征中,一或多个导体包括围绕气体通道的圆筒形导体。
从详细描述、权利要求和附图,本公开的其它应用领域会变得显而易见。详细描述和具体实施例出于说明目的而不是意在限制本公开的范围。
附图说明
由详细描述和附图,将更全面地理解本公开,其中:
图1A和1B是根据本公开的衬底处理系统的实施例的功能框图和简化的剖视图;
图2A和2B是根据本公开的喷头的实施例的一部分的局部剖视图;
图3示出了在等离子体抑制结构的板之间的不均匀间隔的示例;
图4示出了在等离子体抑制结构的板上的带齿表面(scalloped surface)的示例;以及
图5示出了等离子体抑制结构的带孔的板的示例。
在附图中,可重复使用附图标记以标识类似和/或相同的元件。
具体实施方式
图1A、1B、2A和2B示出了根据本公开的喷头10的实施例。在图1A中,喷头10包括背板20、杆24和面板30。在一些实施例中,喷头10的背板20、杆24和面板30由非金属材料(比如陶瓷材 料)制成。虽然示出了杆24,但杆24可被省略且背板可被布置在处理室的表面上、邻近处理室的表面布置和/或凹进处理室的表面中(图1B)。在一些实施例中,陶瓷材料包括氮化铝(AlN)、氧化铝(Al2O3)或其它合适的陶瓷材料。
在一些实施例中,背板20包括大体平坦的盘(planar disc)。杆24连接到背板20。在一些实施例中,杆24是圆筒形的且杆24的轴垂直连接到包括背板20的平面。仅仅作为例子,杆24和背板20可利用扩散接合或钎焊固定地连接在一起。替代地,杆24和背板20可利用紧固件、公母连接件或其它方法可拆卸地连接。
杆24限定轴向延伸穿过杆24的气体通道34。气体流过气体通道34到可选的挡板38上并进入气体空间32,气体空间32被限定在背板20和面板30之间。背板20和面板30中的一者或二者可包括凹部36以限定气体空间32的高度。
面板30限定作为气体空间32和反应容积腔44之间的气体扩散器的气体扩散表面41。气体扩散表面41可以是穿孔的、具有孔、或是多孔的,等等。仅仅以图1A举例,气体空间32中的工艺气体可流过面板30的隔开的孔42进入反应容积腔44。隔开的孔42以相对均匀的方式在置于基架48上的衬底46的整个暴露表面上分配工艺气体。
射频(RF)电极50被嵌在背板20(图1和2A)或面板30(图2B)内。一或多个导体或连杆54穿过杆24和部分背板20。导体54与RF电极50电接触。在一些实施例中,使用四个导体54,但也可使用更多或更少的导体54。沿着气体通道34的电场随着连杆的数量的增加而减少。在一些实施例中,导体54是圆筒形的且围绕气体通道34。一或多个导体54可连接到RF电压或连接到参考电位(比如,如果喷头10被构造为接地电极,则一或多个导体54连接到地电位)。
喷头10包括等离子体抑制结构60,等离子体抑制结构60布置在背板20的上表面和处理室的上表面之间以减少或消除通过背板20驱动的寄生放电。在一些实施例中,等离子体抑制结构60可根据2011 年11月23日提交的、申请序号为13/303,386、名称为“MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER”的共同受让的美国专利申请进行制造,该申请通过参考全文并入本文。
杆24可被附着到轴环80(collar)。轴环80进而可被附着到处理室的上表面。轴环80可包括杆85和自邻近轴环80的顶部的杆85径向向外延伸的凸缘86。轴环80可由介电(绝缘)材料制成且可具有使耦合到接地的电容最小化的维度(即可具有厚度或高度)。阀90和泵92可被用来在反应容积腔44中创建真空。
面板30以一定方式被附着到背板20以提供气体密封以及在它们之间允许因热膨胀的差异而引起的相对横向移动。此处所用的横向移动是指与包括面板的平面平行的移动。换句话说,面板30被安装到背板20使得面板30能够热膨胀却不传递应力给背板20,同时密封气体空间32内的气体/蒸汽。
从图2A中最清楚可见,在一些实施例中,背板20和面板30的边缘使用紧固件64连接。在一些实施例中,紧固件64包括与垫圈67一起预装的螺丝66。螺丝66可被旋转直到预定转矩被施加以维持面板30和背板20之间的接触。在一些实施例中,紧固件64可以是带肩螺钉而垫圈67可以是弹簧垫圈。带肩螺钉施加预定的压力给弹簧垫圈以产生预定义的负荷。在一些实施例中,喷头10的面板30可通过去除紧固件64而进行替换,安装新的面板并重新安装紧固件64。
在一些实施例中,面板30中的隔开的孔42具有0.02英寸至0.06英寸范围内的直径以防止隔开的孔42内部的等离子体点燃。面板30的隔开的孔42可以不同的图案被布置以优化片上膜的性质。隔开的孔42的数量可在50至6000的范围内,但也可使用更多或更少的孔。针对给定的面板,隔开的孔42的直径可以是相同的,或者针对给定的面板,可使用两或更多种不同的尺寸。
在一些实施例中,嵌在背板20中的RF电极50具有盘形且由具有第一热膨胀系数(CTE)的金属制成,该第一CTE与用于喷头10的材料的第二CTE不相上下。从图2B中可见,电极50可被布置在面板30中。可以理解的是,电极50可按一定方式图案化以适应隔开的孔42的图案。背板20或面板30中的RF电极50使高频RF能够穿过喷头10的气体空间32却不点火。
从图2A中最清楚可见,在一些实施例中,RF电极50被设置得尽量靠近背板20的面向衬底的下表面以改善功率耦合(图2A中的尺寸d2)。在一些实施例中,尺寸d1大于尺寸d2。导体54被嵌在杆24的壁中以将RF电极50连接到RF电路70。在一些实施例中,导体54被设置来使沿着通道的电场最小化,通过所述通道,气体被引入。面板30可具有任意合适的厚度(尺寸d4)。
当RF电极50被嵌在背板20中时,驱动放电的电场需要穿过气体空间32和面板30。在一些实施例中,气体空间的高度大小(图2A中的尺寸d3)小于预计等离子体鞘厚度的两倍。利用这种方法,确保了寄生等离子体放电不能维持。在一些实施例中,尺寸d3是1/8英寸或更小从而防止在气体空间32内部维持寄生等离子体的情况以及从而使跨越气体空间32的压降最小化。
从图1A中最清楚可见,当RF电极50被嵌在背板20内部时,喷头10的背面或上表面上的寄生放电的抑制可利用等离子体抑制结构60来执行。在一些实施例中,等离子体抑制结构60包括两或更多间隔开的板100-1、100-2、……、以及100-N(统称为板100),其中N是大于1的整数。在一些实施例中,N等于5,但也可使用更多或更少的板100。在一些实施例中,板100由陶瓷材料或任意其它合适的介电材料制成。板100之间的间隔被优化从而防止板100之间的自持放电,以及从而显著降低等离子体抑制结构60内的电压使得寄生放电在等离子体抑制结构60后面不能持久。一或多个垫片102可被提供来限定等离子体抑制结构60的板100之间的间隔。此外,可在板100 的最上面一个(在图1A的实施例中是100-5)上方且围绕轴环80的杆85设置轴环110。轴环110可由介电材料制成。
控制器120可被连接到一或多个传感器124,传感器124可被布置在处理室的内部和外部。传感器124感测系统操作条件且可包括压力传感器、温度传感器和/或其它传感器。控制器120利用一或多个质量流量控制器(MFC)128和阀130选择性地从气源126供应工艺气体给气体通道34。
在一些实施例中,RF电极50被连接到RF电路70,RF电路70提供高频激励。在一些实施例中,高频激励大于或等于1MHz。陶瓷材料的叠摞层和气体空间32创建了增加放电阻抗的电容结构。随着激励频率增大,阻抗减小。为了提供喷头10的高效运行,大部分输送功率应当在放电时在衬底上方耗散。喷头10后面的等离子体被认为是寄生的。为了使衬底上方的功率耗散最大化,通过面板30的阻抗小于通过背板20的阻抗(否则背面等离子体会消耗很大部分输送功率)。当喷头10包括嵌在背板20中的RF电极50时,更多功率倾向于通过背板20耦合。利用等离子体抑制结构60可减少这种情况。
可根据阻抗模型分析功率耦合。针对发生在面板前面(即,在晶片上方)的等离子体放电,阻抗Zface被估算为:
其中Ci是层i的电容,A是面积,f是频率,di是层i的厚度,ε0是介电常数,ε2=ε4=9,其是AlN或Al2O3的介电常数,且ε3=1,其是真空的介电常数。
因为AlN或Al2O3的介电常数为大约9,所以板对阻抗的作用比类似厚度的真空间隙要小得多。针对发生在喷头的背面上方的等离子体放电(寄生等离子体),没有等离子体抑制结构60的情况下的阻抗被估算为针对没有等离子体抑制结构60的喷头,由于气体空间的高阻抗(ε=1),Zface>Zback。为了抵消,将具有大阻抗 Zsupp的等离子体抑制结构60安装在背板20上以保证Zface<<Zback+Zsupp。
等离子体抑制结构60的阻抗主要取决于板100之间的真空间隙。但如果所述间隙过宽,则板100之间可发生电容性寄生放电。
上面所应用的阻抗模型采用平行板电容器和均匀电场。事实上,会出现边缘场,其会改变上述结果,但预计这种影响是小的。它在最靠近RF电极50处最高。因此,第一间隙(在背板20和等离子体抑制结构60的第一板100-1之间)最易于点燃寄生放电。
在一些实施例中,板间间隙是均匀的。在其它实施例中,板间间隙是不均匀的。仅仅以图3为例,板间间隙200-1、200-2、200-3、200-4和200-5(统称为板间间隙200)中的一些或全部可随着离背板20的距离的增加而增加。仅仅作为例子,板间间隙200可依照40-60-100-150-200(以密耳(mil)为单位)的方式增大,但也可使用其它值。可以理解的是,可例如利用一或多个塞子(未图示)封闭板200的端部。
防止等离子体抑制结构60的板100之间的板间寄生放电依赖于间隙宽度和等离子体鞘厚度的关系。例如在图4中,针对不希望的点燃的改进的保护可通过包括一或多个锯齿或带齿表面230的板220-1、220-2、220-3和220-4(统称为板220)实现。虽然针对每个板220只示出了一个带齿表面230,但每个板220的两个表面均可带齿。高比表面积为离子和电子提供了更多重组位置,增加了它们的损失率并使得自持寄生放电可能性较小。可以理解的是,可例如利用一或多个塞子(未图示)封闭板220的端部。
例如在图5中,针对不希望的点燃的改进的保护可通过板250-1、250-2和250-3(统称为板250)实现,每个板250包括一或多个穿孔260。高比表面积为离子和电子提供了更多重组位置,增加了它们的损失率并使得自持寄生放电可能性较小。可以理解的是,可例如利用一或多个塞子(未图示)封闭板250的端部。
可以理解的是,用于给定衬底处理室的等离子体抑制结构60可包括上述特征的变化例,比如均匀和不均匀的间隔、一或多个带齿表面和/或穿孔。
上述内容在本质上仅仅是说明性的且绝不意在限制本公开、其应用、或者用途。本公开的广泛的教导能够以各种形式实施。因此,虽然本公开包括具体实施例,但本公开的真实范围不应受此限制,因为在学习附图、说明书和接下来的权利要求的基础上,其它修改方案会变得显而易见。本文所使用的短语A、B和C中的至少一者应当被解释为表示使用非排他性的逻辑或的逻辑(A或B或C)。应当理解的是,在不改变本公开的原理的情况下,方法中的一或多个步骤可按不同的顺序(或同时)执行。
在本申请中,包括下面的定义,术语控制器可用术语电路代替。术语控制器可以指下述部件、可以是下述部件的部分或者可以包括下述部件:专用集成电路(ASIC);数字、模拟、或混合模拟/数字分立电路;数字、模拟、或混合模拟/数字集成电路;组合逻辑电路;现场可编程门阵列(FPGA);执行代码的处理器(共享的、专用的、或群组);存储由处理器执行的代码的存储器(共享的、专用的、或群组);提供上述功能的其它合适的硬件部件;或者上述中的一些或全部的组合(比如在片上系统中)。
上面所使用的术语代码可包括软件、固件和/或微代码,且可以指程序、例程、函数、类和/或对象。术语共享处理器包含执行来自多个控制器的一些或全部代码的单个处理器。术语群组处理器包含与其它处理器组合、执行来自一或多个控制器的一些或全部代码的处理器。术语共享存储器包含存储来自多个控制器的一些或全部代码的单个存储器。术语群组存储器包含与其它存储器组合、存储来自一或多个控制器的一些或全部代码的存储器。术语存储器可以是术语计算机可读介质的子集。术语计算机可读介质不包含通过介质传播的临时性的电信号和电磁信号,且因此可被认为是有形的和非临时性的。非临 时性的有形的计算机可读介质的非限制性示例包括非易失性存储器、易失性存储器、磁存储器和光存储器。
本申请中所记载的装置和方法可通过由一或多个处理器执行的一或多个计算机程序部分或全部地实施。计算机程序包括存储在至少一个非临时性的有形的计算机可读介质上的处理器可执行的指令。计算机程序还可包括和/或依赖于所存储的数据。
Claims (22)
1.一种用于衬底处理系统的喷头组件,其包括:
连接到气体通道的背板;
相邻连接到所述背板的第一表面且包括气体扩散表面的面板;
一或多个导体;以及
布置在所述背板和所述面板之一中且被连接到所述一或多个导体的电极,
其中气体空间被限定在所述背板和所述面板之间且与所述气体通道流体连通,且
其中所述背板和所述面板由非金属材料制成。
2.如权利要求1所述的喷头组件,其还包括
连接到所述背板并限定所述气体通道的杆,
其中所述杆由非金属材料制成,且
其中所述一或多个导体穿过所述杆。
3.如权利要求1所述的喷头组件,其中有下列之一:
所述面板的所述气体扩散表面包括间隔开的孔;
所述面板的所述气体扩散表面包括穿孔;或者
所述面板的所述气体扩散表面是多孔的。
4.如权利要求2所述的喷头组件,其还包括邻近所述背板的第二表面布置的等离子体抑制结构,其中所述背板的所述第一表面在所述背板的所述第二表面的对面。
5.如权利要求4所述的喷头组件,其中所述等离子体抑制结构包括以间隔关系彼此平行设置的N个板,其中N是大于1的整数,其中所述N个板由介电材料制成。
6.如权利要求5所述的喷头组件,其中所述等离子体抑制结构包括从所述N个板之一向所述衬底处理系统的处理室的上表面延伸的轴环,且其中所述轴环由介电材料制成。
7.如权利要求5所述的喷头组件,其中N大于2且所述N个板以均匀的方式间隔。
8.如权利要求5所述的喷头组件,其中N大于2且所述N个板中的至少一些以不均匀的方式间隔。
9.如权利要求5所述的喷头组件,其中所述N个板中的至少一个包括多个穿孔。
10.如权利要求5所述的喷头组件,其中所述N个板中的至少一个包括锯齿表面。
11.如权利要求2所述的喷头组件,其中所述杆、所述背板和所述面板由陶瓷材料制成。
12.如权利要求2所述的喷头组件,其中所述杆、所述背板和所述面板由氮化铝和氧化铝中的至少一者制成。
13.如权利要求1所述的喷头组件,其还包括布置在所述气体通道和所述气体空间之间的挡板。
14.如权利要求2所述的喷头组件,其还包括将所述杆连接到衬底处理室的上表面的轴环。
15.如权利要求1所述的喷头组件,其中所述面板被连接到所述背板以允许所述面板相对于所述背板的横向移动,同时保持它们之间的密封。
16.如权利要求1所述的喷头组件,其中所述气体空间的高度大小小于预计等离子体鞘厚度的两倍。
17.如权利要求1所述的喷头组件,其中所述电极和所述背板的所述第一表面之间的第一尺寸小于所述电极和所述背板的第二表面之间的第二尺寸,其中所述背板的所述第一表面在所述背板的所述第二表面的对面。
18.如权利要求1所述的喷头组件,其中所述电极是盘形的。
19.如权利要求2所述的喷头组件,其中所述一或多个导体包括围绕所述气体通道的圆筒形导体。
20.一种衬底处理系统,其包括:
包括反应容积腔的处理室;
布置在所述反应容积腔中的如权利要求1所述的喷头组件;
以及
邻近所述面板布置在所述反应容积腔中的基架。
21.如权利要求20所述的衬底处理系统,其还包括:
配置来提供具有大于1MHz的频率的RF信号给所述一或多个导体的射频(RF)电路;以及
配置来控制流到所述气体通道的工艺气体和控制所述RF电路的操作的控制器。
22.如权利要求21所述的衬底处理系统,其中所述背板直接连接到所述处理室的壁。
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TWI623959B (zh) | 2018-05-11 |
JP6552155B2 (ja) | 2019-07-31 |
SG2014006449A (en) | 2014-09-26 |
KR20210023915A (ko) | 2021-03-04 |
CN104022008B (zh) | 2017-08-29 |
KR102218724B1 (ko) | 2021-02-22 |
KR20220084000A (ko) | 2022-06-21 |
KR102409331B1 (ko) | 2022-06-14 |
US20140238608A1 (en) | 2014-08-28 |
KR102662453B1 (ko) | 2024-04-30 |
KR102562923B1 (ko) | 2023-08-03 |
TW201501171A (zh) | 2015-01-01 |
JP2014170742A (ja) | 2014-09-18 |
KR20230079333A (ko) | 2023-06-07 |
US9449795B2 (en) | 2016-09-20 |
KR20140108178A (ko) | 2014-09-05 |
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