JP2019533274A - プラズマ処理チャンバ用プラズマスクリーン - Google Patents
プラズマ処理チャンバ用プラズマスクリーン Download PDFInfo
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- JP2019533274A JP2019533274A JP2019511414A JP2019511414A JP2019533274A JP 2019533274 A JP2019533274 A JP 2019533274A JP 2019511414 A JP2019511414 A JP 2019511414A JP 2019511414 A JP2019511414 A JP 2019511414A JP 2019533274 A JP2019533274 A JP 2019533274A
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- Prior art keywords
- plasma
- plasma screen
- circular plate
- notches
- screen
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Abstract
Description
本開示の実施形態は、半導体基板を処理するための装置及び方法に関する。より具体的には、本開示の実施形態は、プラズマ処理チャンバ内のプラズマスクリーンに関する。
(関連技術の説明)
Claims (15)
- プラズマスクリーンであって、
中心開口部及び外径を有する円形プレートであって、複数の切欠きが前記円形プレートに貫通形成され、前記複数の切欠きは2つ以上の同心円内に配置され、各同心円内にある前記複数の切欠きの総切欠き面積は実質的に等しい円形プレートを備えるプラズマスクリーン。 - 前記切欠きは細長いスロットである、請求項1記載のプラズマスクリーン。
- 前記円形プレートは伝導性材料から形成される、請求項1記載のプラズマスクリーン。
- 前記円形プレートの1つ以上の外面上に形成されたコーティングを更に備える、請求項3記載のプラズマスクリーン。
- 前記中央開口部の周囲に内側リップを更に備え、前記内側リップは1つ以上の結合機構を有する、請求項1記載のプラズマスクリーン。
- 前記外径の付近に形成された外側リップを更に備える、請求項1記載のプラズマスクリーン。
- 前記円形プレートに積層される下部円形プレートを更に備え、前記下部円形プレートは前記円形プレートの切欠きと合う複数の下部切欠きを含む、請求項1記載のプラズマスクリーン。
- プラズマ処理チャンバであって、
処理領域を画定するチャンバ本体と、
前記処理領域に面する基板支持面を有する基板支持体と、
前記基板支持面の周囲に配置されたプラズマスクリーンであって、前記プラズマスクリーンは中央開口部と貫通形成された複数の切欠きを有する円形プレートを含み、前記円形プレートは前記基板支持体の外側領域と前記チャンバ本体の内面との間の環状エリアを渡って延在するプラズマスクリーンとを備える、プラズマ処理チャンバ。 - 前記複数の切欠きは2つ以上の同心円内に配置され、各同心円は同数の切欠きを含む、請求項8記載のプラズマ処理チャンバ。
- 伝導性ガスケットを更に備え、前記伝導性ガスケットは前記中央開口部の周囲に配置されて前記円形プレートとチャンバコンポーネントとの間に連続的な結合部を形成する、請求項8記載のプラズマ処理チャンバ。
- 前記円形プレートは外径の周囲に形成された外側リップを更に備え、前記外側リップはチャンバコンポーネントに取り付けられる、請求項8記載のプラズマ処理チャンバ。
- 前記チャンバコンポーネントは、前記処理領域の周囲で前記チャンバ本体の内側に配置されたライナである、請求項11に記載のプラズマ処理チャンバ。
- 前記プラズマスクリーンは、前記円形プレートと一緒に積層される下部プレートを備え、前記下部プレートは前記複数の切欠きと同一の複数の下部切欠きを有する、請求項8記載のプラズマ処理チャンバ。
- 基板を処理する方法であって、
基板をプラズマ処理チャンバ内の基板支持体上に配置するステップと、
前記プラズマチャンバ内の流路を通って1つ以上の処理ガスを流すステップであって、前記流路には基板の周囲に配置された前記プラズマスクリーン内の複数の切欠きが含まれ、前記プラズマスクリーンは前記基板支持体とチャンバ本体との間の環状エリアを渡って延在する円形プレートを有するステップとを含む、方法。 - 前記プラズマスクリーンを通るRFリターンパスを提供するステップを更に含む、請求項14記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662380151P | 2016-08-26 | 2016-08-26 | |
US62/380,151 | 2016-08-26 | ||
PCT/US2017/048170 WO2018039315A1 (en) | 2016-08-26 | 2017-08-23 | Plasma screen for plasma processing chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019533274A true JP2019533274A (ja) | 2019-11-14 |
JP6994502B2 JP6994502B2 (ja) | 2022-01-14 |
Family
ID=61243197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019511414A Active JP6994502B2 (ja) | 2016-08-26 | 2017-08-23 | プラズマ処理チャンバ用プラズマスクリーン |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180061618A1 (ja) |
JP (1) | JP6994502B2 (ja) |
KR (1) | KR102390323B1 (ja) |
CN (1) | CN109643630A (ja) |
TW (1) | TWI804472B (ja) |
WO (1) | WO2018039315A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7427108B2 (ja) | 2020-03-19 | 2024-02-02 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバ内で使用するための低抵抗閉じ込めライナ |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
CN208835019U (zh) * | 2018-11-12 | 2019-05-07 | 江苏鲁汶仪器有限公司 | 一种反应腔内衬 |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US20200243305A1 (en) * | 2019-01-25 | 2020-07-30 | Mattson Technology, Inc. | Post Plasma Gas Injection In A Separation Grid |
US20210066051A1 (en) * | 2019-08-28 | 2021-03-04 | Applied Materials, Inc. | High conductance lower shield for process chamber |
USD931241S1 (en) | 2019-08-28 | 2021-09-21 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
USD943539S1 (en) | 2020-03-19 | 2022-02-15 | Applied Materials, Inc. | Confinement plate for a substrate processing chamber |
USD979524S1 (en) | 2020-03-19 | 2023-02-28 | Applied Materials, Inc. | Confinement liner for a substrate processing chamber |
US11499223B2 (en) | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110005680A1 (en) * | 2009-07-08 | 2011-01-13 | Ajit Balakrishna | Tunable gas flow equalizer |
US20160042982A1 (en) * | 2014-08-08 | 2016-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas-flow control method for plasma apparatus |
US20160163569A1 (en) * | 2011-04-28 | 2016-06-09 | Lam Research Corporation | Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040129218A1 (en) * | 2001-12-07 | 2004-07-08 | Toshiki Takahashi | Exhaust ring mechanism and plasma processing apparatus using the same |
US7686918B2 (en) * | 2002-06-21 | 2010-03-30 | Tokyo Electron Limited | Magnetron plasma processing apparatus |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
TW587139B (en) * | 2002-10-18 | 2004-05-11 | Winbond Electronics Corp | Gas distribution system and method for the plasma gas in the chamber |
US7879182B2 (en) * | 2003-12-26 | 2011-02-01 | Foundation For Advancement Of International Science | Shower plate, plasma processing apparatus, and product manufacturing method |
US20090188625A1 (en) * | 2008-01-28 | 2009-07-30 | Carducci James D | Etching chamber having flow equalizer and lower liner |
US20110303146A1 (en) * | 2009-12-28 | 2011-12-15 | Osamu Nishijima | Plasma doping apparatus |
JP5597463B2 (ja) * | 2010-07-05 | 2014-10-01 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US9184028B2 (en) * | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
TWI568319B (zh) * | 2011-10-05 | 2017-01-21 | 應用材料股份有限公司 | 電漿處理設備及其蓋組件(二) |
CN107180738B (zh) * | 2013-03-15 | 2019-08-27 | 应用材料公司 | 用于旋转压板式ald腔室的等离子体源 |
US9017526B2 (en) * | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
CN105789015B (zh) * | 2014-12-26 | 2018-06-29 | 中微半导体设备(上海)有限公司 | 一种实现均匀排气的等离子体处理设备 |
US10217614B2 (en) * | 2015-01-12 | 2019-02-26 | Lam Research Corporation | Ceramic gas distribution plate with embedded electrode |
-
2017
- 2017-08-23 JP JP2019511414A patent/JP6994502B2/ja active Active
- 2017-08-23 CN CN201780052603.8A patent/CN109643630A/zh active Pending
- 2017-08-23 KR KR1020197007682A patent/KR102390323B1/ko active IP Right Grant
- 2017-08-23 US US15/684,230 patent/US20180061618A1/en not_active Abandoned
- 2017-08-23 WO PCT/US2017/048170 patent/WO2018039315A1/en active Application Filing
- 2017-08-25 TW TW106128955A patent/TWI804472B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110005680A1 (en) * | 2009-07-08 | 2011-01-13 | Ajit Balakrishna | Tunable gas flow equalizer |
US20160163569A1 (en) * | 2011-04-28 | 2016-06-09 | Lam Research Corporation | Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones |
US20160042982A1 (en) * | 2014-08-08 | 2016-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas-flow control method for plasma apparatus |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7427108B2 (ja) | 2020-03-19 | 2024-02-02 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバ内で使用するための低抵抗閉じ込めライナ |
Also Published As
Publication number | Publication date |
---|---|
JP6994502B2 (ja) | 2022-01-14 |
CN109643630A (zh) | 2019-04-16 |
TW201820379A (zh) | 2018-06-01 |
US20180061618A1 (en) | 2018-03-01 |
WO2018039315A1 (en) | 2018-03-01 |
KR102390323B1 (ko) | 2022-04-22 |
KR20190036566A (ko) | 2019-04-04 |
TWI804472B (zh) | 2023-06-11 |
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