KR102106030B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102106030B1
KR102106030B1 KR1020147019553A KR20147019553A KR102106030B1 KR 102106030 B1 KR102106030 B1 KR 102106030B1 KR 1020147019553 A KR1020147019553 A KR 1020147019553A KR 20147019553 A KR20147019553 A KR 20147019553A KR 102106030 B1 KR102106030 B1 KR 102106030B1
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South Korea
Prior art keywords
oxide semiconductor
film
semiconductor film
oxide
insulating film
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Expired - Fee Related
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KR1020147019553A
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Korean (ko)
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KR20140107451A (ko
Inventor
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147019553A 2011-12-23 2012-12-19 반도체 장치 Expired - Fee Related KR102106030B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011282509 2011-12-23
JPJP-P-2011-282509 2011-12-23
PCT/JP2012/083764 WO2013094772A1 (en) 2011-12-23 2012-12-19 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20140107451A KR20140107451A (ko) 2014-09-04
KR102106030B1 true KR102106030B1 (ko) 2020-04-29

Family

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Family Applications (1)

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KR1020147019553A Expired - Fee Related KR102106030B1 (ko) 2011-12-23 2012-12-19 반도체 장치

Country Status (7)

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US (3) US8796683B2 (enExample)
JP (8) JP2013149965A (enExample)
KR (1) KR102106030B1 (enExample)
CN (3) CN103999228B (enExample)
SG (1) SG11201504823YA (enExample)
TW (2) TWI580047B (enExample)
WO (1) WO2013094772A1 (enExample)

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CN109065630B (zh) 2021-07-06
JP2019192930A (ja) 2019-10-31
US20130161608A1 (en) 2013-06-27
US9166061B2 (en) 2015-10-20
US8796683B2 (en) 2014-08-05
TWI580047B (zh) 2017-04-21
JP6714130B2 (ja) 2020-06-24
TW201336077A (zh) 2013-09-01
CN109065630A (zh) 2018-12-21
TWI613824B (zh) 2018-02-01
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US20140339555A1 (en) 2014-11-20
US9559213B2 (en) 2017-01-31
JP2013149965A (ja) 2013-08-01
CN103999228B (zh) 2018-07-03
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JP2018137468A (ja) 2018-08-30
WO2013094772A1 (en) 2013-06-27
JP2024015008A (ja) 2024-02-01
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JP2025036727A (ja) 2025-03-14
SG11201504823YA (en) 2015-07-30
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TW201727912A (zh) 2017-08-01

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