KR101944239B1 - 발광 표시 장치 및 이를 포함한 전자 기기 - Google Patents

발광 표시 장치 및 이를 포함한 전자 기기 Download PDF

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KR101944239B1
KR101944239B1 KR1020187005532A KR20187005532A KR101944239B1 KR 101944239 B1 KR101944239 B1 KR 101944239B1 KR 1020187005532 A KR1020187005532 A KR 1020187005532A KR 20187005532 A KR20187005532 A KR 20187005532A KR 101944239 B1 KR101944239 B1 KR 101944239B1
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oxide semiconductor
wiring
semiconductor layer
light emitting
pixel
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KR20180026549A (ko
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료 아라사와
히데아키 시시도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H01L27/1225—
    • H01L27/124—
    • H01L27/3211—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020187005532A 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기 Active KR101944239B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-235180 2009-10-09
JP2009235180 2009-10-09
PCT/JP2010/066744 WO2011043216A1 (en) 2009-10-09 2010-09-21 Light-emitting display device and electronic device including the same

Related Parent Applications (1)

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KR1020177024898A Division KR101835748B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기

Publications (2)

Publication Number Publication Date
KR20180026549A KR20180026549A (ko) 2018-03-12
KR101944239B1 true KR101944239B1 (ko) 2019-01-31

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KR1020187005532A Active KR101944239B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기
KR1020167036062A Active KR101778513B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기
KR1020127011625A Active KR101759504B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기
KR1020177024898A Active KR101835748B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기

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KR1020167036062A Active KR101778513B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기
KR1020127011625A Active KR101759504B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기
KR1020177024898A Active KR101835748B1 (ko) 2009-10-09 2010-09-21 발광 표시 장치 및 이를 포함한 전자 기기

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US (8) US8482004B2 (enExample)
JP (19) JP2011100723A (enExample)
KR (4) KR101944239B1 (enExample)
CN (1) CN102549638B (enExample)
TW (3) TWI607560B (enExample)
WO (1) WO2011043216A1 (enExample)

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WO2011043216A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including the same
WO2011043217A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
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KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
JP5319816B2 (ja) * 2011-05-21 2013-10-16 双葉電子工業株式会社 薄膜半導体装置と薄膜半導体装置を用いた表示装置
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
JP6059968B2 (ja) 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8779592B2 (en) * 2012-05-01 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Via-free interconnect structure with self-aligned metal line interconnections
JP2013251255A (ja) 2012-05-04 2013-12-12 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
CN102809857B (zh) * 2012-07-24 2015-06-10 深圳市华星光电技术有限公司 一种液晶显示面板以及液晶显示装置
KR102446991B1 (ko) 2013-09-13 2022-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP6405561B2 (ja) * 2014-12-18 2018-10-17 株式会社Ｊｏｌｅｄ 表示装置
TWI696108B (zh) 2015-02-13 2020-06-11 日商半導體能源研究所股份有限公司 功能面板、功能模組、發光模組、顯示模組、位置資料輸入模組、發光裝置、照明設備、顯示裝置、資料處理裝置、功能面板的製造方法
WO2017064587A1 (en) * 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
KR102490188B1 (ko) 2016-11-09 2023-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법
CN108182872B (zh) * 2016-12-08 2021-01-26 群创光电股份有限公司 具有光感测单元的显示装置
JP2018110812A (ja) * 2017-01-15 2018-07-19 株式会社三洋物産 遊技機
JP6963906B2 (ja) * 2017-04-25 2021-11-10 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102585158B1 (ko) * 2018-07-04 2023-10-05 삼성디스플레이 주식회사 표시 장치
DE202019100728U1 (de) 2019-02-08 2019-02-20 Klaus Wohlfarth Spurverbreiterungsscheibe für Kraftfahrzeuge
JP7562383B2 (ja) * 2020-11-24 2024-10-07 株式会社ジャパンディスプレイ トランジスタ基板およびその製造方法
JP2022178523A (ja) * 2021-05-20 2022-12-02 シャープディスプレイテクノロジー株式会社 アクティブマトリクス基板および液晶表示装置

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