JP2011100723A - 発光表示装置及び当該発光表示装置を具備する電子機器 - Google Patents

発光表示装置及び当該発光表示装置を具備する電子機器 Download PDF

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Publication number
JP2011100723A
JP2011100723A JP2010225633A JP2010225633A JP2011100723A JP 2011100723 A JP2011100723 A JP 2011100723A JP 2010225633 A JP2010225633 A JP 2010225633A JP 2010225633 A JP2010225633 A JP 2010225633A JP 2011100723 A JP2011100723 A JP 2011100723A
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Prior art keywords
wiring
oxide semiconductor
semiconductor layer
light
thin film
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Japanese (ja)
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JP2011100723A5 (ja
Inventor
Akira Arasawa
亮 荒澤
Hideaki Shishido
英明 宍戸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010225633A priority Critical patent/JP2011100723A/ja
Publication of JP2011100723A publication Critical patent/JP2011100723A/ja
Publication of JP2011100723A5 publication Critical patent/JP2011100723A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2010225633A 2009-10-09 2010-10-05 発光表示装置及び当該発光表示装置を具備する電子機器 Withdrawn JP2011100723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010225633A JP2011100723A (ja) 2009-10-09 2010-10-05 発光表示装置及び当該発光表示装置を具備する電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009235180 2009-10-09
JP2010225633A JP2011100723A (ja) 2009-10-09 2010-10-05 発光表示装置及び当該発光表示装置を具備する電子機器

Related Child Applications (4)

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JP2012165507A Division JP5097869B1 (ja) 2009-10-09 2012-07-26 表示装置
JP2013000956A Division JP2013080257A (ja) 2009-10-09 2013-01-08 表示装置
JP2013102112A Division JP5499201B2 (ja) 2009-10-09 2013-05-14 表示装置
JP2015038658A Division JP5926831B2 (ja) 2009-10-09 2015-02-27 表示装置の作製方法

Publications (2)

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JP2011100723A true JP2011100723A (ja) 2011-05-19
JP2011100723A5 JP2011100723A5 (ja) 2013-08-29

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Family Applications (19)

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JP2010225633A Withdrawn JP2011100723A (ja) 2009-10-09 2010-10-05 発光表示装置及び当該発光表示装置を具備する電子機器
JP2012165507A Active JP5097869B1 (ja) 2009-10-09 2012-07-26 表示装置
JP2013000956A Withdrawn JP2013080257A (ja) 2009-10-09 2013-01-08 表示装置
JP2013102112A Active JP5499201B2 (ja) 2009-10-09 2013-05-14 表示装置
JP2015038658A Active JP5926831B2 (ja) 2009-10-09 2015-02-27 表示装置の作製方法
JP2016084160A Active JP6224159B2 (ja) 2009-10-09 2016-04-20 表示装置の作製方法
JP2017194518A Active JP6408102B2 (ja) 2009-10-09 2017-10-04 表示装置の作製方法
JP2018175108A Active JP6600057B2 (ja) 2009-10-09 2018-09-19 表示装置の作製方法
JP2019147645A Active JP6616042B1 (ja) 2009-10-09 2019-08-09 発光表示装置
JP2019201636A Active JP6652681B1 (ja) 2009-10-09 2019-11-06 発光表示装置
JP2020009289A Active JP6708803B2 (ja) 2009-10-09 2020-01-23 発光表示装置
JP2020088533A Expired - Fee Related JP6845363B2 (ja) 2009-10-09 2020-05-21 表示装置
JP2021028047A Active JP7106700B2 (ja) 2009-10-09 2021-02-25 表示装置
JP2022112200A Active JP7130165B1 (ja) 2009-10-09 2022-07-13 表示装置
JP2022132411A Active JP7198964B2 (ja) 2009-10-09 2022-08-23 表示装置
JP2022201810A Active JP7357754B2 (ja) 2009-10-09 2022-12-19 表示装置
JP2023162668A Withdrawn JP2023178298A (ja) 2009-10-09 2023-09-26 発光表示装置
JP2024225211A Active JP7776606B2 (ja) 2009-10-09 2024-12-20 表示装置
JP2025194407A Pending JP2026015499A (ja) 2009-10-09 2025-11-13 発光表示装置

Family Applications After (18)

Application Number Title Priority Date Filing Date
JP2012165507A Active JP5097869B1 (ja) 2009-10-09 2012-07-26 表示装置
JP2013000956A Withdrawn JP2013080257A (ja) 2009-10-09 2013-01-08 表示装置
JP2013102112A Active JP5499201B2 (ja) 2009-10-09 2013-05-14 表示装置
JP2015038658A Active JP5926831B2 (ja) 2009-10-09 2015-02-27 表示装置の作製方法
JP2016084160A Active JP6224159B2 (ja) 2009-10-09 2016-04-20 表示装置の作製方法
JP2017194518A Active JP6408102B2 (ja) 2009-10-09 2017-10-04 表示装置の作製方法
JP2018175108A Active JP6600057B2 (ja) 2009-10-09 2018-09-19 表示装置の作製方法
JP2019147645A Active JP6616042B1 (ja) 2009-10-09 2019-08-09 発光表示装置
JP2019201636A Active JP6652681B1 (ja) 2009-10-09 2019-11-06 発光表示装置
JP2020009289A Active JP6708803B2 (ja) 2009-10-09 2020-01-23 発光表示装置
JP2020088533A Expired - Fee Related JP6845363B2 (ja) 2009-10-09 2020-05-21 表示装置
JP2021028047A Active JP7106700B2 (ja) 2009-10-09 2021-02-25 表示装置
JP2022112200A Active JP7130165B1 (ja) 2009-10-09 2022-07-13 表示装置
JP2022132411A Active JP7198964B2 (ja) 2009-10-09 2022-08-23 表示装置
JP2022201810A Active JP7357754B2 (ja) 2009-10-09 2022-12-19 表示装置
JP2023162668A Withdrawn JP2023178298A (ja) 2009-10-09 2023-09-26 発光表示装置
JP2024225211A Active JP7776606B2 (ja) 2009-10-09 2024-12-20 表示装置
JP2025194407A Pending JP2026015499A (ja) 2009-10-09 2025-11-13 発光表示装置

Country Status (6)

Country Link
US (8) US8482004B2 (enExample)
JP (19) JP2011100723A (enExample)
KR (4) KR101944239B1 (enExample)
CN (1) CN102549638B (enExample)
TW (3) TWI607560B (enExample)
WO (1) WO2011043216A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008944A (ja) * 2011-05-21 2013-01-10 Futaba Corp 薄膜半導体装置と薄膜半導体装置を用いた表示装置
WO2016098317A1 (ja) * 2014-12-18 2016-06-23 株式会社Ｊｏｌｅｄ 表示装置
JP2018185397A (ja) * 2017-04-25 2018-11-22 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP2024028406A (ja) * 2011-11-30 2024-03-04 株式会社半導体エネルギー研究所 半導体装置、電子機器

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WO2011043216A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including the same
WO2011043217A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
JP5806043B2 (ja) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
JP6059968B2 (ja) 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
US8779592B2 (en) * 2012-05-01 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Via-free interconnect structure with self-aligned metal line interconnections
JP2013251255A (ja) 2012-05-04 2013-12-12 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
CN102809857B (zh) * 2012-07-24 2015-06-10 深圳市华星光电技术有限公司 一种液晶显示面板以及液晶显示装置
KR102446991B1 (ko) 2013-09-13 2022-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
TWI696108B (zh) 2015-02-13 2020-06-11 日商半導體能源研究所股份有限公司 功能面板、功能模組、發光模組、顯示模組、位置資料輸入模組、發光裝置、照明設備、顯示裝置、資料處理裝置、功能面板的製造方法
WO2017064587A1 (en) * 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
KR102490188B1 (ko) 2016-11-09 2023-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법
CN108182872B (zh) * 2016-12-08 2021-01-26 群创光电股份有限公司 具有光感测单元的显示装置
JP2018110812A (ja) * 2017-01-15 2018-07-19 株式会社三洋物産 遊技機
KR102585158B1 (ko) * 2018-07-04 2023-10-05 삼성디스플레이 주식회사 표시 장치
DE202019100728U1 (de) 2019-02-08 2019-02-20 Klaus Wohlfarth Spurverbreiterungsscheibe für Kraftfahrzeuge
JP7562383B2 (ja) * 2020-11-24 2024-10-07 株式会社ジャパンディスプレイ トランジスタ基板およびその製造方法
JP2022178523A (ja) * 2021-05-20 2022-12-02 シャープディスプレイテクノロジー株式会社 アクティブマトリクス基板および液晶表示装置

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