KR101850926B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR101850926B1
KR101850926B1 KR1020177034180A KR20177034180A KR101850926B1 KR 101850926 B1 KR101850926 B1 KR 101850926B1 KR 1020177034180 A KR1020177034180 A KR 1020177034180A KR 20177034180 A KR20177034180 A KR 20177034180A KR 101850926 B1 KR101850926 B1 KR 101850926B1
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film
oxide semiconductor
layer
metal oxide
transistor
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KR20170134777A (ko
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순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H01L29/7869—
    • H01L27/1225—
    • H01L29/66742—
    • H01L29/78603—
    • H01L29/78606—
    • H01L29/78618—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Dram (AREA)
KR1020177034180A 2010-04-09 2011-03-11 반도체 장치 Active KR101850926B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010090539 2010-04-09
JPJP-P-2010-090539 2010-04-09
PCT/JP2011/056490 WO2011125454A1 (en) 2010-04-09 2011-03-11 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147009896A Division KR101803730B1 (ko) 2010-04-09 2011-03-11 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187010526A Division KR101884798B1 (ko) 2010-04-09 2011-03-11 반도체 장치

Publications (2)

Publication Number Publication Date
KR20170134777A KR20170134777A (ko) 2017-12-06
KR101850926B1 true KR101850926B1 (ko) 2018-04-20

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ID=44760281

Family Applications (5)

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KR1020177034180A Active KR101850926B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020127028883A Active KR101465192B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020187010526A Active KR101884798B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020147009896A Active KR101803730B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020187021622A Active KR101994909B1 (ko) 2010-04-09 2011-03-11 반도체 장치

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020127028883A Active KR101465192B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020187010526A Active KR101884798B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020147009896A Active KR101803730B1 (ko) 2010-04-09 2011-03-11 반도체 장치
KR1020187021622A Active KR101994909B1 (ko) 2010-04-09 2011-03-11 반도체 장치

Country Status (5)

Country Link
US (7) US8659013B2 (enExample)
JP (10) JP2011233876A (enExample)
KR (5) KR101850926B1 (enExample)
TW (2) TWI545759B (enExample)
WO (1) WO2011125454A1 (enExample)

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CN102844872B (zh) 2010-04-02 2016-08-24 株式会社半导体能源研究所 半导体装置
CN110620156A (zh) 2010-04-02 2019-12-27 株式会社半导体能源研究所 半导体装置
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KR101881729B1 (ko) 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 반도체 장치를 제작하기 위한 방법
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101895421B1 (ko) * 2011-02-24 2018-09-07 삼성디스플레이 주식회사 배선, 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법들
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JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
TWI613813B (zh) * 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
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JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
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JP6496132B2 (ja) 2013-12-02 2019-04-03 株式会社半導体エネルギー研究所 半導体装置
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JP6397654B2 (ja) * 2014-05-13 2018-09-26 株式会社ジャパンディスプレイ 有機ｅｌ発光装置
KR102367990B1 (ko) * 2015-06-15 2022-02-28 삼성디스플레이 주식회사 평판 디스플레이 장치 및 이의 제조 방법
US10395588B2 (en) 2016-03-31 2019-08-27 Intel Corporation Micro LED display pixel architecture
TWI726026B (zh) * 2016-06-27 2021-05-01 日商半導體能源硏究所股份有限公司 電晶體以及半導體裝置
KR102306188B1 (ko) 2021-04-20 2021-09-27 김학군 깐마늘 양산을 위한 자동화 장치
KR20240154164A (ko) * 2023-04-18 2024-10-25 한양대학교 산학협력단 적층형 다중 채널 구조체 및 그 제조 방법, 그리고 이를 포함하는 박막 트랜지스터
KR102869330B1 (ko) * 2024-04-01 2025-10-13 성균관대학교산학협력단 반도체 산화물을 이용한 멤트랜지스터 및 그 제조 방법

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