JP2011233876A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011233876A
JP2011233876A JP2011084309A JP2011084309A JP2011233876A JP 2011233876 A JP2011233876 A JP 2011233876A JP 2011084309 A JP2011084309 A JP 2011084309A JP 2011084309 A JP2011084309 A JP 2011084309A JP 2011233876 A JP2011233876 A JP 2011233876A
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Japan
Prior art keywords
film
oxide semiconductor
metal oxide
semiconductor film
transistor
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JP2011084309A
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Japanese (ja)
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JP2011233876A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011084309A priority Critical patent/JP2011233876A/ja
Publication of JP2011233876A publication Critical patent/JP2011233876A/ja
Publication of JP2011233876A5 publication Critical patent/JP2011233876A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Dram (AREA)
JP2011084309A 2010-04-09 2011-04-06 半導体装置 Withdrawn JP2011233876A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011084309A JP2011233876A (ja) 2010-04-09 2011-04-06 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010090539 2010-04-09
JP2010090539 2010-04-09
JP2011084309A JP2011233876A (ja) 2010-04-09 2011-04-06 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015169287A Division JP6131300B2 (ja) 2010-04-09 2015-08-28 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2011233876A true JP2011233876A (ja) 2011-11-17
JP2011233876A5 JP2011233876A5 (enExample) 2014-05-08

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ID=44760281

Family Applications (10)

Application Number Title Priority Date Filing Date
JP2011084309A Withdrawn JP2011233876A (ja) 2010-04-09 2011-04-06 半導体装置
JP2015169287A Expired - Fee Related JP6131300B2 (ja) 2010-04-09 2015-08-28 半導体装置の作製方法
JP2017081075A Withdrawn JP2017123499A (ja) 2010-04-09 2017-04-17 半導体装置
JP2018173883A Withdrawn JP2018195859A (ja) 2010-04-09 2018-09-18 半導体装置
JP2018173882A Expired - Fee Related JP6644121B2 (ja) 2010-04-09 2018-09-18 半導体装置の作製方法
JP2020087212A Withdrawn JP2020150266A (ja) 2010-04-09 2020-05-19 表示装置
JP2022077518A Active JP7302068B2 (ja) 2010-04-09 2022-05-10 半導体装置
JP2023101481A Active JP7532604B2 (ja) 2010-04-09 2023-06-21 半導体装置
JP2024124471A Active JP7685659B2 (ja) 2010-04-09 2024-07-31 半導体装置
JP2025083309A Pending JP2025109891A (ja) 2010-04-09 2025-05-19 半導体装置

Family Applications After (9)

Application Number Title Priority Date Filing Date
JP2015169287A Expired - Fee Related JP6131300B2 (ja) 2010-04-09 2015-08-28 半導体装置の作製方法
JP2017081075A Withdrawn JP2017123499A (ja) 2010-04-09 2017-04-17 半導体装置
JP2018173883A Withdrawn JP2018195859A (ja) 2010-04-09 2018-09-18 半導体装置
JP2018173882A Expired - Fee Related JP6644121B2 (ja) 2010-04-09 2018-09-18 半導体装置の作製方法
JP2020087212A Withdrawn JP2020150266A (ja) 2010-04-09 2020-05-19 表示装置
JP2022077518A Active JP7302068B2 (ja) 2010-04-09 2022-05-10 半導体装置
JP2023101481A Active JP7532604B2 (ja) 2010-04-09 2023-06-21 半導体装置
JP2024124471A Active JP7685659B2 (ja) 2010-04-09 2024-07-31 半導体装置
JP2025083309A Pending JP2025109891A (ja) 2010-04-09 2025-05-19 半導体装置

Country Status (5)

Country Link
US (7) US8659013B2 (enExample)
JP (10) JP2011233876A (enExample)
KR (5) KR101803730B1 (enExample)
TW (2) TWI603402B (enExample)
WO (1) WO2011125454A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013108327A1 (ja) * 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
JP2015111667A (ja) * 2013-11-06 2015-06-18 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を有する表示装置
JP2015122509A (ja) * 2012-11-16 2015-07-02 株式会社半導体エネルギー研究所 半導体装置
JP2016201560A (ja) * 2012-04-13 2016-12-01 株式会社半導体エネルギー研究所 半導体装置
JP2020174213A (ja) * 2016-06-27 2020-10-22 株式会社半導体エネルギー研究所 トランジスタ
KR102869330B1 (ko) * 2024-04-01 2025-10-13 성균관대학교산학협력단 반도체 산화물을 이용한 멤트랜지스터 및 그 제조 방법

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KR101799757B1 (ko) 2010-03-26 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
KR102292523B1 (ko) 2010-04-02 2021-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130032304A (ko) 2010-04-02 2013-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102844847B (zh) 2010-04-16 2015-09-23 株式会社半导体能源研究所 沉积方法及半导体装置的制造方法
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101895421B1 (ko) * 2011-02-24 2018-09-07 삼성디스플레이 주식회사 배선, 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법들
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
KR102546888B1 (ko) * 2011-06-17 2023-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
TWI613822B (zh) 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9082861B2 (en) * 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US9054204B2 (en) * 2012-01-20 2015-06-09 Sony Corporation Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI512840B (zh) * 2012-02-14 2015-12-11 Innocom Tech Shenzhen Co Ltd 薄膜電晶體及其製作方法及顯示器
KR102388690B1 (ko) 2012-05-31 2022-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201405828A (zh) * 2012-07-31 2014-02-01 E Ink Holdings Inc 顯示面板、薄膜電晶體及其製造方法
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
TWI582993B (zh) * 2012-11-30 2017-05-11 半導體能源研究所股份有限公司 半導體裝置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9627413B2 (en) * 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP6397654B2 (ja) * 2014-05-13 2018-09-26 株式会社ジャパンディスプレイ 有機ｅｌ発光装置
KR102367990B1 (ko) * 2015-06-15 2022-02-28 삼성디스플레이 주식회사 평판 디스플레이 장치 및 이의 제조 방법
US10395588B2 (en) 2016-03-31 2019-08-27 Intel Corporation Micro LED display pixel architecture
KR102306188B1 (ko) 2021-04-20 2021-09-27 김학군 깐마늘 양산을 위한 자동화 장치
KR20240154164A (ko) * 2023-04-18 2024-10-25 한양대학교 산학협력단 적층형 다중 채널 구조체 및 그 제조 방법, 그리고 이를 포함하는 박막 트랜지스터

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JP2009170905A (ja) * 2008-01-15 2009-07-30 Samsung Electronics Co Ltd 表示基板およびこれを含む表示装置
JP2009176865A (ja) * 2008-01-23 2009-08-06 Canon Inc 薄膜トランジスタ及びその製造方法
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