KR101243522B1 - 반도체 부재, 반도체 물품의 제조방법, 및 그 제조방법을 사용한 ｌｅｄ 어레이 - Google Patents

반도체 부재, 반도체 물품의 제조방법, 및 그 제조방법을 사용한 ｌｅｄ 어레이 Download PDF

Info

Publication number
KR101243522B1
KR101243522B1 KR1020097010704A KR20097010704A KR101243522B1 KR 101243522 B1 KR101243522 B1 KR 101243522B1 KR 1020097010704 A KR1020097010704 A KR 1020097010704A KR 20097010704 A KR20097010704 A KR 20097010704A KR 101243522 B1 KR101243522 B1 KR 101243522B1
Authority
KR
South Korea
Prior art keywords
substrate
groove
compound semiconductor
layer
multilayer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097010704A
Other languages
English (en)
Korean (ko)
Other versions
KR20090074091A (ko
Inventor
다카오 요네하라
겐지 야마가타
요시노부 세키구치
고지로 니시
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20090074091A publication Critical patent/KR20090074091A/ko
Application granted granted Critical
Publication of KR101243522B1 publication Critical patent/KR101243522B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/011—Division of wafers or substrates to produce devices, each consisting of a single electric circuit element
    • H10D89/013—Division of wafers or substrates to produce devices, each consisting of a single electric circuit element the wafers or substrates being semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
KR1020097010704A 2006-10-27 2007-10-25 반도체 부재, 반도체 물품의 제조방법, 및 그 제조방법을 사용한 ｌｅｄ 어레이 Expired - Fee Related KR101243522B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2006-293306 2006-10-27
JP2006293306 2006-10-27
JP2006311625A JP5171016B2 (ja) 2006-10-27 2006-11-17 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JPJP-P-2006-311625 2006-11-17
PCT/JP2007/071267 WO2008050901A1 (en) 2006-10-27 2007-10-25 Semiconductor member, semiconductor article manufacturing method, and led array using the manufacturing method

Publications (2)

Publication Number Publication Date
KR20090074091A KR20090074091A (ko) 2009-07-03
KR101243522B1 true KR101243522B1 (ko) 2013-03-21

Family

ID=39324679

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097010704A Expired - Fee Related KR101243522B1 (ko) 2006-10-27 2007-10-25 반도체 부재, 반도체 물품의 제조방법, 및 그 제조방법을 사용한 ｌｅｄ 어레이

Country Status (9)

Country Link
US (2) US8237761B2 (enExample)
EP (1) EP2082439B1 (enExample)
JP (1) JP5171016B2 (enExample)
KR (1) KR101243522B1 (enExample)
CN (1) CN101529605B (enExample)
BR (1) BRPI0718418A2 (enExample)
RU (1) RU2416135C2 (enExample)
TW (1) TWI387129B (enExample)
WO (1) WO2008050901A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
KR101001666B1 (ko) * 2008-07-08 2010-12-15 광주과학기술원 마이크로 수직 구조체의 제조 방법
KR20110079833A (ko) * 2008-10-10 2011-07-08 알타 디바이씨즈, 인크. 메사 식각 방법 및 에피택셜 리프트 오프를 위한 조성물
JP2010114106A (ja) * 2008-11-04 2010-05-20 Canon Inc 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP5132524B2 (ja) * 2008-11-04 2013-01-30 キヤノン株式会社 窒化ガリウム系化合物半導体層の移設方法、及び窒化ガリウム系化合物半導体層が接合された基板
JP5276412B2 (ja) * 2008-11-04 2013-08-28 キヤノン株式会社 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP5390832B2 (ja) 2008-11-04 2014-01-15 キヤノン株式会社 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP2010205943A (ja) * 2009-03-04 2010-09-16 Canon Inc 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP2010238845A (ja) * 2009-03-31 2010-10-21 Oki Data Corp 半導体装置の製造方法、半導体装置、及び、半導体複合装置
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
JP5590837B2 (ja) * 2009-09-15 2014-09-17 キヤノン株式会社 機能性領域の移設方法
KR101047486B1 (ko) * 2009-11-12 2011-07-08 삼성전기주식회사 Ｓｏｉ 기판 가공방법
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
CN102130221B (zh) * 2010-01-13 2013-03-27 晶元光电股份有限公司 发光二极管的形成方法
JPWO2011093405A1 (ja) * 2010-02-01 2013-06-06 有限会社Ｍｔｅｃ チップサイズパッケージの光半導体装置
US8828138B2 (en) 2010-05-17 2014-09-09 International Business Machines Corporation FET nanopore sensor
KR101372852B1 (ko) * 2010-10-05 2014-03-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5655861B2 (ja) * 2010-12-01 2015-01-21 株式会社村田製作所 圧電発電装置及びその製造方法
CN102157633B (zh) * 2011-01-17 2013-01-16 苏州纳方科技发展有限公司 Led外延芯片的分离方法
US8518829B2 (en) * 2011-04-22 2013-08-27 International Business Machines Corporation Self-sealed fluidic channels for nanopore array
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof
US9269858B2 (en) * 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
JP2013080896A (ja) * 2011-09-22 2013-05-02 Sumitomo Chemical Co Ltd 複合基板の製造方法および複合基板
US8445361B1 (en) * 2011-09-28 2013-05-21 Paul C. Lindsey, Jr. Method of dividing a semiconductor wafer having semiconductor and metal layers into separate devices
JP2013093412A (ja) 2011-10-25 2013-05-16 Showa Denko Kk 発光ダイオード、発光ダイオードの製造方法、発光ダイオードランプ及び照明装置
CN102956552B (zh) * 2012-08-21 2016-03-16 王伟明 薄膜光伏电池的制备方法
CN103794488B (zh) * 2012-11-02 2018-01-09 北京北方华创微电子装备有限公司 一种衬底的刻蚀方法
DE102013105035A1 (de) 2013-05-16 2014-11-20 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
RU2546719C1 (ru) * 2013-12-05 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирская государственная геодезическая академия" (ФГБОУ ВПО "СГГА") Способ получения рельефа на поверхности
TWI769941B (zh) * 2014-06-18 2022-07-01 愛爾蘭商艾克斯展示公司技術有限公司 微組裝發光二極體顯示器及照明元件
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
CN108369950A (zh) * 2015-07-24 2018-08-03 光澄科技股份有限公司 多晶圆光吸收装置及其应用
CN105206716B (zh) * 2015-09-18 2019-02-05 华灿光电(苏州）有限公司 一种垂直结构发光二极管的制作方法
FR3041364B1 (fr) * 2015-09-18 2017-10-06 Soitec Silicon On Insulator Procede de transfert de paves monocristallins
CN105529382B (zh) * 2016-01-20 2019-04-12 华灿光电(苏州）有限公司 一种红黄光的发光二极管外延片及芯片的制备方法
CN110504338A (zh) * 2018-05-18 2019-11-26 睿明科技股份有限公司 微元件工艺及制作显示器面板的方法
CN109148368B (zh) * 2018-07-11 2021-09-14 西安电子科技大学 AlGaN/GaN HEMT器件的外延层转移方法
CN109103091B (zh) * 2018-07-11 2021-11-09 西安电子科技大学 Ga2O3基MOSFET器件的外延层转移方法
CN109244026B (zh) * 2018-07-23 2022-02-18 西安电子科技大学 一种半导体器件外延层的转移方法
KR102568353B1 (ko) 2018-08-16 2023-08-18 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
KR102652501B1 (ko) 2018-09-13 2024-03-29 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
CN111081827B (zh) * 2018-10-19 2022-03-01 成都辰显光电有限公司 一种半导体器件剥离方法
KR102590984B1 (ko) * 2018-10-30 2023-10-18 삼성디스플레이 주식회사 발광 소자 구조물 및 발광 소자의 제조방법
KR102732448B1 (ko) * 2018-11-27 2024-11-21 삼성전자주식회사 마이크로 광원 어레이, 이를 포함한 디스플레이 장치 및 디스플레이 장치의 제조 방법
CN111525013A (zh) * 2019-02-01 2020-08-11 隆达电子股份有限公司 发光二极管及其制造方法
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP7484078B2 (ja) * 2019-05-10 2024-05-16 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN113994486A (zh) * 2019-05-10 2022-01-28 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
CN110164322A (zh) * 2019-05-22 2019-08-23 深圳市华星光电半导体显示技术有限公司 一种显示面板及电子装置
KR102712725B1 (ko) 2019-07-10 2024-10-02 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
CN114072914A (zh) * 2019-07-10 2022-02-18 日亚化学工业株式会社 图像显示装置的制造方法及图像显示装置
JP7585602B2 (ja) * 2019-11-11 2024-11-19 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
RU196426U1 (ru) * 2019-12-27 2020-02-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) Прозрачный гетеропереход на основе оксидов
WO2021226945A1 (zh) * 2020-05-14 2021-11-18 重庆康佳光电技术研究院有限公司 一种转移方法及显示装置
CN112992720B (zh) * 2020-07-22 2022-04-29 重庆康佳光电技术研究院有限公司 微发光二极管芯片巨量转移方法及系统
JPWO2022059527A1 (enExample) * 2020-09-17 2022-03-24
US11830733B2 (en) * 2021-03-26 2023-11-28 Alliance For Sustainable Energy, Llc Patterned nanochannel sacrificial layer for semiconductor substrate reuse
CN115440577A (zh) * 2022-08-05 2022-12-06 中国科学院物理研究所 制备异晶面同质结薄膜的方法
CN115939269B (zh) * 2022-11-11 2023-11-17 江苏第三代半导体研究院有限公司 自分离式氮化镓基光电子器件及其制作方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172351A (ja) 2002-11-20 2004-06-17 Oki Data Corp 半導体装置及びその製造方法
JP2005012034A (ja) 2003-06-20 2005-01-13 Oki Data Corp 半導体薄膜の製造方法及び半導体装置の製造方法
JP2005019590A (ja) 2003-06-25 2005-01-20 Oki Data Corp 半導体装置の製造方法
JP2005051117A (ja) 2003-07-30 2005-02-24 Oki Data Corp 半導体装置の製造方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2048339C (en) * 1990-08-03 1997-11-25 Takao Yonehara Semiconductor member and process for preparing semiconductor member
US5750000A (en) * 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
JP2693032B2 (ja) * 1990-10-16 1997-12-17 キヤノン株式会社 半導体層の形成方法及びこれを用いる太陽電池の製造方法
EP0486019B1 (en) * 1990-11-15 1997-07-23 Canon Kabushiki Kaisha Method for forming single crystal layer
CA2069038C (en) * 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
EP0534474B1 (en) * 1991-09-27 2002-01-16 Canon Kabushiki Kaisha Method of processing a silicon substrate
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
JP3192000B2 (ja) * 1992-08-25 2001-07-23 キヤノン株式会社 半導体基板及びその作製方法
JPH06244389A (ja) * 1992-12-25 1994-09-02 Canon Inc 半導体基板の作製方法及び該方法により作製された半導体基板
US5545291A (en) * 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
JP3265493B2 (ja) * 1994-11-24 2002-03-11 ソニー株式会社 Ｓｏｉ基板の製造方法
JPH09331049A (ja) * 1996-04-08 1997-12-22 Canon Inc 貼り合わせｓｏｉ基板の作製方法及びｓｏｉ基板
JPH09293930A (ja) 1996-04-26 1997-11-11 Matsushita Electric Works Ltd 半導体発光素子
EP0851513B1 (en) * 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US6756289B1 (en) * 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
CA2231625C (en) * 1997-03-17 2002-04-02 Canon Kabushiki Kaisha Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
CA2232796C (en) * 1997-03-26 2002-01-22 Canon Kabushiki Kaisha Thin film forming process
CA2233127C (en) * 1997-03-27 2004-07-06 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
JP3492142B2 (ja) * 1997-03-27 2004-02-03 キヤノン株式会社 半導体基材の製造方法
US6143628A (en) * 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
JP3647191B2 (ja) * 1997-03-27 2005-05-11 キヤノン株式会社 半導体装置の製造方法
EP0926709A3 (en) * 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
US6331208B1 (en) * 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
US6391743B1 (en) * 1998-09-22 2002-05-21 Canon Kabushiki Kaisha Method and apparatus for producing photoelectric conversion device
JP3488098B2 (ja) 1998-10-06 2004-01-19 株式会社東芝 光半導体素子及びその製造方法
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
RU2165663C2 (ru) * 1999-07-13 2001-04-20 Санкт-Петербургский государственный электротехнический университет Источник инфракрасного излучения
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP4465745B2 (ja) * 1999-07-23 2010-05-19 ソニー株式会社 半導体積層基板，半導体結晶基板および半導体素子ならびにそれらの製造方法
US6653209B1 (en) * 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
JP2001284622A (ja) * 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
JP3981797B2 (ja) 2000-04-05 2007-09-26 サンケン電気株式会社 半導体発光素子
JP2002359247A (ja) * 2000-07-10 2002-12-13 Canon Inc 半導体部材、半導体装置およびそれらの製造方法
JP2002151734A (ja) * 2000-09-04 2002-05-24 Sharp Corp 発光ダイオード
JP2002229473A (ja) * 2001-01-31 2002-08-14 Canon Inc 表示装置の製造方法
JP4708577B2 (ja) * 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP4803884B2 (ja) * 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP4058590B2 (ja) * 2001-06-29 2008-03-12 サンケン電気株式会社 半導体発光素子
JP4061062B2 (ja) * 2001-12-13 2008-03-12 ローム株式会社 半導体発光素子の製法および酸化炉
JP4211256B2 (ja) 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
JP2004200209A (ja) * 2002-12-16 2004-07-15 Fuji Xerox Co Ltd 電極等の導電パターンの形成方法およびこれを用いた面発光型半導体レーザ並びにその製造方法
TWI244774B (en) * 2003-05-06 2005-12-01 Canon Kk Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
JP2004335642A (ja) * 2003-05-06 2004-11-25 Canon Inc 基板およびその製造方法
JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
US6913985B2 (en) * 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
JP3801160B2 (ja) * 2003-09-11 2006-07-26 セイコーエプソン株式会社 半導体素子、半導体装置、半導体素子の製造方法、半導体装置の製造方法及び電子機器
US7408566B2 (en) * 2003-10-22 2008-08-05 Oki Data Corporation Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device
JP4672329B2 (ja) 2003-10-22 2011-04-20 株式会社沖データ 半導体装置、及び、それを用いたｌｅｄプリントヘッド、画像形成装置、半導体装置の製造方法
JP4501412B2 (ja) * 2003-11-11 2010-07-14 セイコーエプソン株式会社 半導体素子、デバイス及び電子機器
JP2005159071A (ja) * 2003-11-27 2005-06-16 Ricoh Co Ltd 半導体デバイスおよびその製造方法および光伝送システム
KR100576718B1 (ko) * 2003-12-24 2006-05-03 한국전자통신연구원 실리콘 발광 소자
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
JP2005311072A (ja) 2004-04-21 2005-11-04 Matsushita Electric Ind Co Ltd 発光素子および照明装置
US7622367B1 (en) * 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
JP4771510B2 (ja) * 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
US7495313B2 (en) * 2004-07-22 2009-02-24 Board Of Trustees Of The Leland Stanford Junior University Germanium substrate-type materials and approach therefor
JP2006216832A (ja) 2005-02-04 2006-08-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2006237061A (ja) 2005-02-22 2006-09-07 Matsushita Electric Ind Co Ltd 光半導体装置の製造方法
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172351A (ja) 2002-11-20 2004-06-17 Oki Data Corp 半導体装置及びその製造方法
JP2005012034A (ja) 2003-06-20 2005-01-13 Oki Data Corp 半導体薄膜の製造方法及び半導体装置の製造方法
JP2005019590A (ja) 2003-06-25 2005-01-20 Oki Data Corp 半導体装置の製造方法
JP2005051117A (ja) 2003-07-30 2005-02-24 Oki Data Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US8237761B2 (en) 2012-08-07
RU2416135C2 (ru) 2011-04-10
RU2009120060A (ru) 2011-01-10
WO2008050901A1 (en) 2008-05-02
EP2082439A4 (en) 2011-08-03
CN101529605A (zh) 2009-09-09
EP2082439A1 (en) 2009-07-29
TWI387129B (zh) 2013-02-21
TW200834988A (en) 2008-08-16
US20120282716A1 (en) 2012-11-08
KR20090074091A (ko) 2009-07-03
EP2082439B1 (en) 2013-12-11
CN101529605B (zh) 2011-05-11
US20100026779A1 (en) 2010-02-04
US8670015B2 (en) 2014-03-11
BRPI0718418A2 (pt) 2013-11-12
JP5171016B2 (ja) 2013-03-27
JP2008135419A (ja) 2008-06-12

Similar Documents

Publication Publication Date Title
KR101243522B1 (ko) 반도체 부재, 반도체 물품의 제조방법, 및 그 제조방법을 사용한 ｌｅｄ 어레이
KR101168881B1 (ko) 기능성 영역의 이설방법, ｌｅｄ 어레이, ｌｅｄ 프린터 헤드, 및 ｌｅｄ 프린터
US8415230B2 (en) Method for transferring functional regions, LED array, LED printer head, and LED printer
US8513093B2 (en) Substrate structure including functional region and method for transferring functional region
JP5599916B2 (ja) 半導体装置の製造方法、半導体装置及びそれを用いた光プリントヘッド、及び画像形成装置
KR101160137B1 (ko) 기능성 영역의 이설 방법, ｌｅｄ 어레이, ｌｅｄ 프린터 헤드, 및 ｌｅｄ 프린터
US20090315965A1 (en) Led array manufacturing method, led array and led printer
JP5390832B2 (ja) 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
WO2008053907A1 (en) Led array manufacturing method, led array and led printer

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160226

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170308

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170308

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000