WO2021226945A1 - 一种转移方法及显示装置 - Google Patents

一种转移方法及显示装置 Download PDF

Info

Publication number
WO2021226945A1
WO2021226945A1 PCT/CN2020/090290 CN2020090290W WO2021226945A1 WO 2021226945 A1 WO2021226945 A1 WO 2021226945A1 CN 2020090290 W CN2020090290 W CN 2020090290W WO 2021226945 A1 WO2021226945 A1 WO 2021226945A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
transferred
release
substrate
glue
Prior art date
Application number
PCT/CN2020/090290
Other languages
English (en)
French (fr)
Inventor
李强
许时渊
Original Assignee
重庆康佳光电技术研究院有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 重庆康佳光电技术研究院有限公司 filed Critical 重庆康佳光电技术研究院有限公司
Priority to PCT/CN2020/090290 priority Critical patent/WO2021226945A1/zh
Priority to US17/347,144 priority patent/US11695091B2/en
Publication of WO2021226945A1 publication Critical patent/WO2021226945A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • the invention belongs to the field of LED display technology, and in particular relates to a transfer method and a display device.
  • Micro-LED Micro Light Emitting Diode
  • LED miniaturization and matrix technology has good stability, longevity, and operating temperature advantages, while also inheriting LED low power consumption and color
  • advantages of saturation, fast response speed, and strong contrast Micro-LEDs have higher brightness and lower power consumption, making Micro-LEDs have great application prospects.
  • the first transfer is to transfer the LED chips on the growth substrate to the first transient substrate
  • the second transfer It is to transfer the LED chip on the first transient substrate to the second transient substrate
  • the third transfer is to transfer the LED chip on the second transient substrate to the display backplane.
  • photolysis glue and pyrolysis glue are needed.
  • the two kinds of glue materials have certain thickness and fluidity, and the thickness of the LED chip is only a few microns, it is easy to cause the glue material to overflow and wrap the LED chip, resulting in a low transfer success rate.
  • the purpose of the present invention is to provide a transfer method and a display device, which overcomes the tendency of glue overflow to wrap the LED chip in the existing LED chip transfer process, resulting in successful LED chip transfer The problem of low rate.
  • the present invention provides a transfer method, which includes: partially cutting a preset scribe line on an epitaxial layer on a growth substrate to obtain a cut wafer to be transferred, wherein the depth of the cut is smaller than that of the epitaxial layer Provide a transient substrate, the transient substrate is provided with a first release glue, through the first release glue and the first side of the wafer to be transferred to bond, to be transferred The wafer is adhered to the transient substrate, and the growth substrate is peeled off; a blue film is provided, and a second release glue is provided on the blue film, and the second release glue communicates with the wafer to be transferred Bonding the second side surface of the wafer to be transferred to the blue film and peeling off the transient substrate, wherein the first side surface and the second side surface are arranged directly opposite to each other; A roller is provided, the roller is arranged at the bottom of the blue film, and is arranged opposite to the wafer to be transferred, and the blue film is lifted by the roller to make the remaining
  • the predetermined cutting path on the epitaxial layer on the growth substrate is partially cut, that is, a part of the uncut area is reserved between the wafers to be transferred; during the wafer transfer process, Part of the uncut area can block the overflowing adhesive material and prevent the wafer to be transferred from being wrapped by the adhesive material, thereby increasing the success rate of LED chip transfer; the interaction force provided by the uncut area prevents the relative position of the wafer from changing, which further improves LED chip transfer success rate.
  • the remaining cutting lanes are V-shaped or U-shaped.
  • the uncut area at the lower end of the V-shaped remaining dicing track or U-shaped remaining dicing path is thinner, and will be broken preferentially under stress, and the wafer to be transferred is away from the remaining cutting at this time There is a certain distance between the channels, which will not cause damage to the edge of the wafer to be transferred.
  • the first release glue is used to bond with the first side surface of the wafer to be transferred, so as to adhere the wafer to be transferred on the transient substrate, and peel off the growth substrate , Including: coating or pasting a first release glue on the transient substrate, fixing the transient substrate on the side of the wafer to be transferred opposite to the growth substrate; and peeling off the growth by laser A substrate, transferring the wafer to be transferred to the transient substrate.
  • the second release adhesive is used to adhere to the second side surface of the wafer to be transferred, so as to adhere the wafer to be transferred on the blue film, and peel off the temporary
  • the state substrate includes: coating or pasting a second release glue on the blue film, fixing the blue film on the side of the wafer to be transferred opposite to the transient substrate; 2. Peel off the transient substrate under the condition of releasing the glue, and transfer the wafer to be transferred to the blue film.
  • a roller is provided, the roller is arranged at the bottom of the blue film, and is arranged opposite to the wafer to be transferred, and the blue film is lifted by the roller to make the crystal to be transferred
  • the remaining dicing path on the circle automatically splits under the action of stress, including: providing a roller, placing the roller on the side of the blue film away from the wafer to be transferred; wherein the roller is located on the The middle position of the remaining dicing track; the blue film is pushed up by the roller, so that the remaining dicing track on the wafer to be transferred is broken under the action of stress, so as to automatically split the wafer to be transferred.
  • the method further includes: contacting the wafer to be transferred with the growth substrate by hydrochloric acid Clean the side. There will be residual metal gallium on the surface of the wafer to be transferred in contact with the growth substrate. The side of the wafer to be transferred in contact with the growth substrate is cleaned to facilitate the transfer of the wafer to be transferred to the blue film in the subsequent steps.
  • the release conditions of the first release glue and the second release glue are different.
  • the release condition of the first release adhesive is satisfied, the viscosity of the first release adhesive decreases, while the viscosity of the second release adhesive remains unchanged, so that the wafer to be transferred is transferred to the blue film.
  • the first release adhesive is a photolytic adhesive
  • the second release adhesive is a pyrolytic adhesive
  • the peeling of the transient substrate under the condition of satisfying the release condition of the second release adhesive includes: Laser irradiates the transient substrate to release the adhesion of the second release adhesive, so that the transient substrate is peeled off from the wafer to be transferred.
  • the first release glue is a pyrolysis glue
  • the second release glue is a photolysis glue
  • the peeling of the transient substrate under the condition of satisfying the release condition of the second release glue includes: The transient substrate is heated to release the adhesiveness of the second release adhesive, so that the transient substrate is peeled off from the wafer to be transferred.
  • the present invention also provides a display device, which includes a display substrate on which an LED chip is fixed, and the LED chip is transferred using the transfer method.
  • the predetermined cutting path on the epitaxial layer on the growth substrate is partially cut, that is, part of the uncut area is reserved between the wafers to be transferred.
  • part of the The uncut area can block the overflowing adhesive material and prevent the wafer to be transferred from being wrapped by the adhesive material; the interaction force provided by the uncut area prevents the relative position of the wafer to be transferred from changing, which improves the success rate of LED chip transfer and reduces
  • the production cost of the display device improves the production efficiency of the display device.
  • the present invention provides a transfer method and a display device.
  • a part of the uncut area is reserved between the wafers to be transferred.
  • part of the uncut area can block the overflowing glue material to prevent the wafer from being wrapped by the glue material, thereby improving the success rate of LED chip transfer; the interaction force provided by the uncut area prevents the relative position of the wafer to be transferred from changing. The success rate of LED chip transfer is further improved.
  • Fig. 1 is a flowchart of a preferred embodiment of a transfer method provided by an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the manufacturing process of the transfer method provided by an embodiment of the present invention.
  • the LED chip on the growth substrate needs to be transferred three times.
  • photolytic glue and pyrolytic glue are required, because these two glue materials have a certain thickness and fluidity.
  • the thickness of the LED chip is only a few microns, so it is easy to cause the glue overflow to wrap the LED chip, resulting in a low transfer rate of the LED chip.
  • a transfer method provided by the present invention specifically, the transfer method includes the following steps:
  • the preset cutting channel means that after the growth of the epitaxial crystal on the growth substrate is completed, a plurality of cutting channels will be reserved to facilitate the slicing of the epitaxial crystal.
  • FIG. 2 is a schematic diagram of the manufacturing process of a transfer method provided by an embodiment of the present invention.
  • the predetermined dicing lane 22 on the epitaxial layer on the growth substrate 21 is partially cut to obtain the cut wafer 24 to be transferred, and the cutting depth of the predetermined dicing lane 22 is less than the depth of the epitaxial layer, and the wafers 24 to be transferred are The remaining dicing path 23 is formed.
  • the remaining dicing path 23 can block the overflowing glue material, and prevent the wafer 24 to be transferred from being wrapped by the glue material, thereby increasing the success rate of the LED chip transfer; and the remaining dicing path
  • the interaction force provided by 23 prevents the relative position of the wafer 24 to be transferred from changing, which further improves the success rate of the LED chip transfer.
  • a transient substrate 26 is further provided.
  • a first release glue 25 is provided on the state substrate 26. Then, the first release glue 25 is bonded to the first side surface of the wafer 24 to be transferred, so that the wafer 24 to be transferred is adhered to the transient substrate 26 through the first release glue 25. Finally, the growth substrate 21 is peeled off, and the wafer 24 to be transferred is transferred to the transient substrate 26.
  • the first release glue 25 has a certain thickness and fluidity, the remaining dicing lines 23 between the wafers 24 to be transferred can prevent the first release glue 25 from overflowing the glue to wrap the wafers 24 to be transferred.
  • the first release glue 25 may be a photolysis glue or a pyrolysis glue.
  • step S2 specifically includes:
  • S22 Peel off the growth substrate by laser, and transfer the wafer to be transferred to the transient substrate.
  • the first side surface of the wafer 24 to be transferred is the side of the wafer 24 to be transferred opposite to the growth substrate 21, and a part of the preset cutting lane 22 on the epitaxial layer on the growth substrate 21 is performed.
  • a first release adhesive 25 is coated or pasted on the transient substrate 26, and the transient substrate 26 is fixed on the wafer 24 to be transferred through the first release adhesive 25
  • the first release glue 25 has a certain thickness and fluidity, the remaining dicing lines 23 remaining between the wafers 24 to be transferred can prevent the first release glue 25 from overflowing and wrapping the wafers 24 to be transferred.
  • the method further includes:
  • S23 Clean the side of the wafer to be transferred in contact with the growth substrate by hydrochloric acid.
  • hydrochloric acid is further used to clean the side of the wafer 24 to be transferred in contact with the growth substrate 21 to remove residual metal gallium. Since concentrated hydrochloric acid is corrosive, in order to avoid hydrochloric acid from corroding the wafer 24 to be transferred, in this embodiment, dilute hydrochloric acid is used to clean the side of the wafer 24 to be transferred in contact with the growth substrate 21.
  • the first release glue 25 and the second release glue 27 include, but are not limited to, UV photolysis glue, pyrolysis glue and cold glue. And the release conditions of the first release glue 25 and the second release glue 27 are different, so that the transient substrate 26 can be removed under the release conditions of the first release glue 25, and the second release glue 27 is not affected .
  • a blue film 28 is further provided, and a second release glue 27 is provided on the blue film 28. Then, the second release glue 27 is bonded to the second side of the wafer 24 to be transferred opposite to the aforementioned first side, so that the wafer 24 to be transferred is adhered to the blue film 28 through the second release glue 27. Finally, the transient substrate 26 is peeled off, and the wafer 24 to be transferred is transferred to the blue film 28.
  • the second release glue 27 has a certain thickness and fluidity, the remaining dicing lines 23 between the wafers 24 to be transferred can prevent the second release glue 27 from overflowing and wrapping the wafers 24 to be transferred.
  • the second release glue 27 may be a pyrolysis glue or a photolysis glue.
  • first release glue 25 and the second release glue 27 are different glues. That is, when the first release glue 25 is a photolytic glue, the second release glue 27 is a pyrolytic glue. Conversely, when the first release glue 25 is a pyrolysis glue, the second release glue 27 is a photolysis glue.
  • step S3 specifically includes:
  • the second side of the wafer 24 to be transferred is the side opposite to the transient substrate 26.
  • the wafer 24 to be transferred is transferred to the transient substrate 26.
  • a second release adhesive 27 is coated or pasted on the blue film 28, and the blue film 28 is fixed on the side of the wafer 24 to be transferred opposite to the transient substrate 26 through the second release adhesive 27;
  • the transient substrate 26 transfers the wafer 24 to be transferred onto the blue film 28.
  • the second release glue 27 has a certain thickness and fluidity, the remaining cutting lanes 23 between the wafers 24 to be transferred can prevent the second release glue 27 from overflowing the glue to wrap the wafers 24 to be transferred.
  • the first release adhesive 25 is a photolytic adhesive
  • the second release adhesive 27 is a pyrolytic adhesive.
  • the step of removing the transient substrate in step S32 specifically includes:
  • the blue film 28 is fixed on the wafer 24 to be transferred and the wafer to be transferred by the second release adhesive 27.
  • the first release glue 25 is decomposed under the light conditions, so that the wafer to be transferred 24 is separated from the transient substrate 26, so that the wafer to be transferred is separated from the transient substrate 26. 24 is transferred to the blue film 28.
  • a laser with a wavelength of 266 nm is used to irradiate the transient substrate 26 to reduce the viscosity of the first release glue 25 on the transient substrate 26 and transfer the wafer 24 to be transferred to the blue film 28.
  • the first release glue 25 is a pyrolysis glue
  • the second release glue 27 is a photolysis glue.
  • the step of removing the transient substrate in step S32 specifically includes:
  • the blue film 28 is fixed on the wafer 24 to be transferred and the wafer to be transferred by the second release glue 27.
  • the transient substrate 26 is heated, and the first release glue 25 is decomposed under the heating condition, so that the wafer 24 to be transferred is separated from the transient substrate 26, so that the wafer to be transferred is separated from the transient substrate 26. 24 is transferred to the blue film 28.
  • the method further includes:
  • the remaining dicing lane 23 is a V-shaped dicing lane or U-shaped.
  • the blue film 28 is further lifted up by a roller to split the wafer 24 to be transferred.
  • a roller is placed on the side of the blue film 28 away from the wafer 24 to be transferred, and the roller is located in the middle of the remaining dicing lane 23; then the blue film 28 is lifted up by the roller , To split a number of the wafers 24 to be transferred on the blue film 28. Since the uncut area at the lower end of the V-shaped remaining dicing path 23 or the U-shaped remaining dicing path 23 is relatively thin, it will be fractured preferentially. In addition, during the splitting process of the wafer 24 to be transferred, since the remaining dicing path 23 is at a certain distance from the wafer 24 to be transferred, the edge of the wafer 24 to be transferred will not be damaged.
  • S4 Provide a roller, which is arranged at the bottom of the blue film and is opposite to the wafer to be transferred.
  • the blue film is lifted by the roller to make the remaining wafer on the wafer to be transferred.
  • the cutting channel automatically splits under the action of stress.
  • a roller is further provided, and the roller is placed on the bottom of the blue film 28, and the roller is arranged opposite to the wafer 24 to be transferred; then the blue film is removed by the roller 28 is lifted up, and the remaining cutting lane 23 is broken under the action of stress, so that the wafer 24 to be transferred is automatically split. Since the remaining dicing lane 23 is at a certain distance from the wafer 24 to be transferred, the edge of the wafer 24 to be transferred will not be damaged.
  • the method before the step S1, the method further includes:
  • a growth substrate 21 is first provided.
  • the growth substrate 21 may include but is not limited to sapphire, silicon carbide, silicon, etc.; then an epitaxial layer is formed on the growth substrate 21 by means of MOCVD; Multiple processes such as etching, electrode growth, and thinning are performed on the layer to prepare a wafer fixed on the growth substrate 21.
  • this embodiment also provides a display device.
  • the display device includes a display substrate on which an LED chip is fixed.
  • the LED chip is transferred using the above-mentioned transfer method.
  • the wafer to be transferred is wrapped by glue; the interaction force provided by the uncut area prevents the relative position of the wafer to be transferred from changing, which improves the success rate of LED chip transfer, reduces the production cost of the display device, and improves the production efficiency of the display device .
  • the present invention provides a transfer method and a display device.
  • the method includes: performing partial cutting on a preset cutting lane on an epitaxial layer on a growth substrate to obtain a cut wafer to be transferred, wherein: The cutting depth is less than the depth of the epitaxial layer; a transient substrate is provided, and a first release adhesive is provided on the transient substrate, and the first release adhesive is used to bond with the first side surface of the wafer to be transferred.
  • This application partially cuts the preset cutting lanes on the epitaxial layer on the growth substrate, leaving some uncut areas between the wafers to be transferred.
  • some uncut areas can block overflow
  • Adhesive material prevents the wafer to be transferred from being wrapped by the adhesive material, thereby increasing the success rate of LED chip transfer; the interaction force provided by the uncut area prevents the relative position of the wafer to be transferred from changing, which further improves the success rate of LED chip transfer.

Abstract

一种转移方法及显示装置，方法包括：对外延层上的预设切割道（22）进行部分切割，得到切割后的待转移晶圆（24）（S1）；通过第一释放胶（25）与待转移晶圆（24）的第一侧面进行粘接，以将待转移晶圆（24）粘附在暂态基板（26）上，并剥离生长基板（21）（S2）；通过第二释放胶（27）与待转移晶圆（24）的第二侧面进行粘接，将待转移晶圆（24）粘附在蓝膜（28）上，并剥离暂态基板（26）（S3）；通过滚轮将蓝膜（28）顶起，使待转移晶圆（24）上的剩余切割道（23）在应力的作用下自动进行裂片（S4）。通过对外延层上的预设切割道（22）进行部分切割，在待转移晶圆（24）之间保留部分区域未切割，在待转移晶圆（24）转移过程中，部分未切割区域可以阻挡溢出的胶材，防止待转移晶圆（24）被胶材包裹，从而提高LED芯片转移成功率；未切割区域提供的相互作用力使得待转移晶圆（24）相对位置不会发生改变，进一步提高了LED芯片转移成功率。

Description

一种转移方法及显示装置 技术领域
本发明属于LED显示技术领域，尤其涉及一种转移方法及显示装置。
背景技术
微型发光二极管(Micro Light Emitting Diode,即Micro-LED)技术，即LED微缩化和矩阵化技术，具有良好的稳定性，寿命，以及运行温度上的优势，同时也继承了LED低功耗、色彩饱和度、反应速度快、对比度强等优点，Micro-LED的亮度更高，且功率消耗量更低，使得Micro-LED具有极大地应用前景。
现有LED显示器件的生产过程中，需要对生长基板上的LED芯片进行三次转移，具体的，第一次转移为将生长基板上的LED芯片转移到第一暂态基板上，第二次转移是将第一暂态基板上的LED芯片转移到第二暂态基板上，第三次转移是将第二暂态基板上的LED芯片转移至显示背板上。并且在这三次转移过程中，需要使用光解胶和热解胶。但是由于两种胶材具有一定厚度和流动性，而LED芯片厚度只有几微米，所以很容易发生胶材溢胶将LED芯片包裹造成转移成功率低。
因此，现有技术有待于进一步的改进。
发明内容
鉴于上述现有技术中的不足之处，本发明的目的在于提供一种转移方法及显示装置，克服现有LED芯片转移过程中，容易发生胶材溢胶将LED芯片包裹，造成LED芯片转移成功率低的问题。
第一方面，本发明提供一种转移方法，包括：对生长基板上的外延层上的预设切割道进行部分切割，得到切割后的待转移晶圆，其中，切割的深度小于所述外延层的深度；提供一暂态基板，所述暂态基板上设有第一释放胶，通过所述第一释放胶与所述待转移晶圆的第一侧面进行粘接，以将所述待转移晶圆粘附在所述暂态基板上，并剥离所述生 长基板；提供一蓝膜，所述蓝膜上设有第二释放胶，通过所述第二释放胶与所述待转移晶圆的第二侧面进行粘接，以将所述待转移晶圆粘附在所述蓝膜上，并剥离所述暂态基板，其中，所述第一侧面与所述第二侧面正对设置；提供一滚轮，所述滚轮设于所述蓝膜底部，且与所述待转移晶圆相对设置，通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下自动进行裂片。
上述转移方法，在对晶圆进行转移前，对生长基板上的外延层上的预设切割道进行部分切割，即在待转移晶圆之间保留部分未切割区域；在晶圆转移过程中，部分未切割区域可以阻挡溢出的胶材，防止待转移晶圆被胶材包裹，从而提高LED芯片转移成功率；未切割区域提供的相互作用力使得晶圆相对位置不会发生改变，进一步提高了LED芯片转移成功率。
可选地，所述剩余切割道为V型或U型。
在上述实现过程中，滚轮将蓝膜顶起后，V型剩余切割道或者U型剩余切割道下端未切割区域较薄，在应力作用下会优先断裂，而此时待转移晶圆距离剩余切割道有一定距离，不会造成待转移晶圆边缘损坏。
可选地，通过所述第一释放胶与所述待转移晶圆的第一侧面进行粘接，以将所述待转移晶圆粘附在所述暂态基板上，并剥离所述生长基板，包括：在所述暂态基板上涂覆或者贴覆第一释放胶，将所述暂态基板固定在所述待转移晶圆与所述生长基板相对的一面上；通过激光剥离所述生长基板，将所述待转移晶圆转移到所述暂态基板上。
可选地，所述通过所述第二释放胶与所述待转移晶圆的第二侧面进行粘接，以将所述待转移晶圆粘附在所述蓝膜上，并剥离所述暂态基板，包括：在所述蓝膜上涂覆或者贴覆第二释放胶，将所述蓝膜固定在所述待转移晶圆与所述暂态基板相对的一面上；在满足所述第二释放胶的释放条件下剥离所述暂态基板，将所述待转移晶圆转移到所述蓝膜上。
可选地，所述提供一滚轮，所述滚轮设于所述蓝膜底部，且与所述待转移晶圆相对设置，通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下自动进行裂片，包括：提供一滚轮，将所述滚轮放置在所述蓝膜远离所述待转移晶圆的一面上；其中，所述滚轮位于所述剩余切割道的中间位置；通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下断裂，以对所述待转移晶圆自动进行裂片。
可选地，所述通过激光剥离所述生长基板，将所述待转移晶圆转移到所述暂态基 板上的步骤之后还包括：通过盐酸对所述待转移晶圆与所述生长基板接触的一面进行清洗。待转移晶圆与生长基板接触的面上会存在残留的金属镓，通过对待转移晶圆与生长基板接触的一面进行清洗，方便后续步骤中将待转移晶圆转移到蓝膜上。
可选地，所述第一释放胶和所述第二释放胶的释放条件不同。在满足第一释放胶的释放条件下，第一释放胶的粘性降低，而第二释放胶的粘性不变，从而将待转移晶圆转移到蓝膜上。
可选地，所述第一释放胶为光解胶，所述第二释放胶为热解胶；所述在满足所述第二释放胶的释放条件下剥离所述暂态基板，包括：通过激光照射所述暂态基板，解除所述第二释放胶的粘性，使所述暂态基板从所述待转移晶圆上剥离下来。
可选地，所述第一释放胶为热解胶，所述第二释放胶为光解胶；所述在满足所述第二释放胶的释放条件下剥离所述暂态基板，包括：通过对所述暂态基板进行加热，解除所述第二释放胶的粘性，使所述暂态基板从所述待转移晶圆上剥离下来。
第二方面，基于同样的发明构思，本发明还提供一种显示装置，所述显示装置包括固定有LED芯片的显示基板，所述LED芯片采用所述的转移方法进行转移。
上述显示装置，对晶圆进行转移前，对生长基板上的外延层上的预设切割道进行部分切割，即在待转移晶圆之间保留部分未切割区域，在晶圆转移过程中，部分未切割区域可以阻挡溢出的胶材，防止待转移晶圆被胶材包裹；未切割区域提供的相互作用力使得待转移晶圆相对位置不会发生变化，提高了LED芯片转移成功率，降低了显示装置生产成本，提高了显示装置生产效率。
有益效果，本发明提供了一种转移方法及显示装置，通过对生长基板上的外延层上的预设切割道进行部分切割，在待转移晶圆之间保留部分未切割区域，在晶圆转移过程中，部分未切割区域可以阻挡溢出的胶材，防止晶圆被胶材包裹，从而提高LED芯片转移成功率；未切割区域提供的相互作用力使得待转移晶圆相对位置不会发生改变，进一步提高了LED芯片转移成功率。
附图说明
图1是本发明实施例提供的一种转移方法的较佳实施例的流程图；
图2是本发明实施例提供的转移方法的制程示意图。
附图标记说明：
21-生长基板；22-预设切割道；23-剩余切割道；24-待转移晶圆；25-第一释放胶； 26-暂态基板；27-第二释放胶；28-蓝膜。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本申请。
现有LED显示器件在生产过程中，需要对生长基板上的LED芯片进行三次转移，这三次转移过程中需要用到光解胶和热解胶，由于这两种胶材具有一定厚度和流动性，而LED芯片厚度只有几微米，所以很容易发生胶材溢胶将LED芯片包裹，造成LED芯片转移率低。
基于此，本申请希望提供一种能够解决上述技术问题的方案，其详细内容将在后续实施例中得以阐述。
请参照图1，本发明提供的一种转移方法，具体地，该转移方法包括如下步骤：
S1、对生长基板上的外延层上的预设切割道进行部分切割，得到切割后的待转移晶圆，其中，切割的深度小于所述外延层的深度。
其中，预设切割道是指生长基板上的磊晶在生长完成之后，会被预留多个切割道，以便于对磊晶进行切片。
作为一种实施方式，如图2所示为本发明实施例提供的一种转移方法的制程示意图，为了解决LED芯片转移过程中的溢胶问题，在生长基板21上制备出晶圆后，对生长基板21上的外延层上的预设切割道22进行部分切割，得到切割后的待转移晶圆24，且预设切割道22的切割深度小于外延层的深度，在待转移晶圆24间形成剩余切割道23，在待转移晶圆24转移过程中，剩余切割道23可以阻挡溢出的胶材，防止待转移晶圆24被胶材包裹，从而提高LED芯片转移成功率；且剩余切割道23提供的相互作用力使得待转移晶圆24相对位置不会发生改变，进一步地提高了LED芯片转移成功率。
S2、提供一暂态基板，所述暂态基板上设有第一释放胶，通过所述第一释放胶与所述待转移晶圆的第一侧面进行粘接，以将所述待转移晶圆粘附在所述暂态基板上，并剥离所述生长基板。
作为一种实施方式，在对生长基板上的外延层上的预设切割道进行部分切割，在待转移晶圆24之间形成剩余切割道23后，进一步提供一暂态基板26，所述暂态基板26上设有第一释放胶25。然后将第一释放胶25与待转移晶圆24的第一侧面进行粘接，使待转移晶圆24通过第一释放胶25粘附在所述暂态基板26上。最后剥离所述生长基板21，将待转移晶圆24转移到暂态基板26上。在这一过程中，虽然第一释放胶25具有一定厚度和流动性，但待转移晶圆24之间的剩余切割道23可以防止第一释放胶25溢胶将待转移晶圆24包裹。
可选地，第一释放胶25可以为光解胶或热解胶。
在一具体实施方式中，所述步骤S2具体包括：
S21、在所述暂态基板上涂覆或者贴覆第一释放胶，将所述暂态基板固定在所述待转移晶圆与所述生长基板相对的一面上；
S22、通过激光剥离所述生长基板，将所述待转移晶圆转移到所述暂态基板上。
具体实施时，所述待转移晶圆24的第一侧面为所述待转移晶圆24与所述生长基板21相对的一面，对生长基板21上的外延层上的预设切割道22进行部分切割，得到切割后的待转移晶圆24后，在暂态基板26上涂覆或贴覆第一释放胶25，通过第一释放胶25将暂态基板26固定在所述待转移晶圆24与所述生长基板21相对的一面上；然后通过激光剥离(Laser Lift Off)所述生长基板21，将所述待转移晶圆24转移到所述暂态基板26上。在此过程中，虽然第一释放胶25具有一定厚度和流动性，但待转移晶圆24之间保留的剩余切割道23可以防止第一释放胶25溢胶将待转移晶圆24包裹。
在一具体实施方式中，所述步骤S22之后还包括：
S23、通过盐酸对所述待转移晶圆与所述生长基板接触的一面进行清洗。
具体实施时，通过激光剥离生长基板21后，待转移晶圆24与生长基板21接触的面上会存在残留的金属镓，为了后续步骤中通过第二释放胶27将蓝膜28固定在待转移晶圆24上，本实施例中进一步使用盐酸对所述待转移晶圆24与所述生长基板21接触的一面进行清洗，以去除残留的金属镓。由于浓盐酸具有腐蚀性，为了避免盐酸对待转移晶圆24造成腐蚀，本实施例中采用稀盐酸对所述待转移晶圆24与所述生长基板21接触的一面进行清洗。
具体实施时，所述第一释放胶25和所述第二释放胶27包括但不限于UV光解胶、热解胶和冷解胶。且所述第一释放胶25和所述第二释放胶27的释放条件不同，这样能够在满足第一释放胶25的释放条件下去除暂态基板26，而使第二释放胶27不受影响。
S3、提供一蓝膜，所述蓝膜上设有第二释放胶，通过所述第二释放胶与所述待转移晶圆的第二侧面进行粘接，以将所述待转移晶圆粘附在所述蓝膜上，并剥离所述暂态基板，其中，所述第一侧面与所述第二侧面正对设置；
具体实施时，将待转移晶圆24转移到暂态基板26上后，进一步提供一蓝膜28，所述蓝膜28上设有第二释放胶27。然后将第二释放胶27与待转移晶圆24与前述第一侧面相对的第二侧面进行粘接，使待转移晶圆24通过第二释放胶27粘附在所述蓝膜28上。最后剥离所述暂态基板26，将待转移晶圆24转移到蓝膜28上。在这一过程中，虽然第二释放胶27具有一定厚度和流动性，但待转移晶圆24之间的剩余切割道23可以防止第二释放胶27溢胶将待转移晶圆24包裹。
可选地，第二释放胶27可以是热解胶，也可以是光解胶。
需要说明的是，第一释放胶25与第二释放胶27为不同胶。也就是说，当第一释放胶25为光解胶时，第二释放胶27为热解胶。反之，当第一释放胶25为热解胶时，第二释放胶27为光解胶。
在一具体实施方式中，所述步骤S3具体包括：
S31、在所述蓝膜上涂覆或者贴覆第二释放胶，将所述蓝膜固定在所述待转移晶圆与所述暂态基板相对的一面上；
S32、去除所述暂停基板，将所述待转移晶圆转移到所述蓝膜上。
具体实施时，所述待转移晶圆24的第二侧面为所述待转移晶圆24与所述暂态基板26相对的一面，将待转移晶圆24转移到暂态基板26上后，进一步在蓝膜28上涂覆或贴覆第二释放胶27，通过第二释放胶27将蓝膜28固定在所述待转移晶圆24与所述暂态基板26相对的一面上；然后去除所述暂态基板26，将所述待转移晶圆24转移到所述蓝膜28上。在此过程中，虽然第二释放胶27具有一定厚度和流动性，但待转移晶圆24之间的剩余切割道23可以防止第二释放胶27溢胶将待转移晶圆24包裹。
在一具体实施方式中，所述第一释放胶25为光解胶，所述第二释放胶27为热解胶，步骤S32中所述去除所述暂态基板的步骤具体包括：
S321、通过激光照射所述暂态基板，解除所述第二释放胶的粘性，使所述暂态基板从所述待转移晶圆上剥离下来。
具体实施时，当第一释放胶25为光解胶，第二释放胶27为热解胶时，通过第二释放胶27将所述蓝膜28固定在所述待转移晶圆24与所述暂态基板26相对的一面上后，对所述暂态基板26进行光照，在光照条件下第一释放胶25分解，使待转移晶圆24与暂态基板26分离，从而使待转移晶圆24转移到蓝膜28上。在一具体实施例中，使用波长为266nm的激光照射暂态基板26，减小暂态基板26上第一释放胶25的粘性，将待转移晶圆24转移到蓝膜28上。
在一具体实施方式中，所述第一释放胶25为热解胶，所述第二释放胶27为光解胶，步骤S32中所述去除所述暂态基板的步骤具体包括：
S321’、通过对所述暂态基板进行加热，解除所述第二释放胶的粘性，使所述暂态基板从所述待转移晶圆上剥离下来。
具体实施时，当第一释放胶25为热解胶，第二释放胶27为光解胶时，通过第二释放胶27将所述蓝膜28固定在所述待转移晶圆24与所述暂态基板26相对的一面上后，对所述暂态基板26进行加热，在加热条件下第一释放胶25分解，使待转移晶圆24与暂态基板26分离，从而使待转移晶圆24转移到蓝膜28上。
在一具体实施方式中，所述步骤S3之后还包括：
S41、提供一滚轮，将所述滚轮放置在所述蓝膜远离所述待转移晶圆的一面上；其中，所述滚轮位于所述剩余切割道的中间位置；
S42、通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下断裂，以对所述待转移晶圆自动进行裂片。
具体实施时，所述剩余切割道23为V型切割道或U型，将待转移晶圆24转移到蓝膜28后，进一步使用滚轮将蓝膜28顶起对待转移晶圆24进行裂片。具体地，将滚轮放置在所述蓝膜28远离所述待转移晶圆24的一面上，且所述滚轮位于所述剩余切割道23的中间位置；然后通过滚轮将所述蓝膜28顶起，对所述蓝膜28上的若干所述待转移晶圆24进行裂片。由于V型剩余切割道23或者U型剩余切割道23下端未切割区域较薄，会优先断裂，断裂后滚轮必须停止上顶，防止待转移晶圆24破裂。且在待转移晶圆24裂片过程中，由于剩余切割道23距离待转移晶圆24有一定距离，不会造成待转移晶圆24边缘破损。
S4、提供一滚轮，所述滚轮设于所述蓝膜底部，且与所述待转移晶圆相对设置，通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下自动进行裂片。
具体实施时，将待转移晶圆24转移到蓝膜28上后，进一步提供一滚轮，将滚轮放置于蓝膜28底部，且使滚轮与待转移晶圆24相对设置；然后通过滚轮将蓝膜28顶起，剩余切割道23在应力的作用下断裂，使得待转移晶圆24自动进行裂片。由于剩余切割道23距离待转移晶圆24有一定距离，不会造成待转移晶圆24边缘破损。
在一具体实施方式中，所述步骤S1之前还包括：
S01、提供一生长基板；
S02、在所述生长基板上形成外延层。
具体实施时，本实施例中首先提供一生长基板21，所述生长基板21可以包括但不限于蓝宝石、碳化硅或硅等；然后在生长基板21上采用MOCVD等方式形成外延层；最后在外延层上进行刻蚀、电极生长、减薄等多道工序，制备固定在生长基板21上的晶圆。
在一具体实施方式中，本实施例中还提供了一种显示装置，所述显示装置包括固定有LED芯片的显示基板，所述LED芯片采用上述所述的转移方法进行转移，由于上述转移方法对LED芯片进行转移前，对生长基板上的外延层上的预设切割道进行部分切割，即在待转移晶圆之间保留部分未切割区域，部分未切割区域可以阻挡溢出的胶材，防止待转移晶圆被胶材包裹；未切割区域提供的相互作用力使得待转移晶圆相对位置不会发生变化，提高了LED芯片转移成功率，降低了显示装置生产成本，提高了显示装置生产效率。
综上所述，本发明提供了一种转移方法及显示装置，所述方法包括：对生长基板上的外延层上的预设切割道进行部分切割，得到切割后的待转移晶圆，其中，切割的深度小于所述外延层的深度；提供一暂态基板，所述暂态基板上设有第一释放胶，通过所述第一释放胶与所述待转移晶圆的第一侧面进行粘接，以将所述待转移晶圆粘附在所述暂态基板上，并剥离所述生长基板；提供一蓝膜，所述蓝膜上设有第二释放胶，通过所述第二释放胶与所述待转移晶圆的第二侧面进行粘接，以将所述待转移晶圆粘附在所述蓝膜上，并剥离所述暂态基板，其中，所述第一侧面与所述第二侧面正对设置；提供一滚轮，所述滚轮设于所述蓝膜底部，且与所述待转移晶圆相对设置，通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下自动进行裂片。本申请通过对生长基板上的外延层上的预设切割道进行部分切割，在待转移晶圆之间保留部分未切割区域，在待转移晶圆转移过程中，部分未切割区域可以阻挡溢出的胶材，防止待转移晶圆被胶材包裹，从而提高LED芯片转移成功率；未切割区域提供的相互作用力使 得待转移晶圆相对位置不会发生改变，进一步提高了LED芯片转移成功率。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (10)

  1. 一种转移方法，其特征在于，包括：
    对生长基板上的外延层上的预设切割道进行部分切割，得到切割后的待转移晶圆，其中，切割的深度小于所述外延层的深度；
    提供一暂态基板，所述暂态基板上设有第一释放胶，通过所述第一释放胶与所述待转移晶圆的第一侧面进行粘接，以将所述待转移晶圆粘附在所述暂态基板上，并剥离所述生长基板；
    提供一蓝膜，所述蓝膜上设有第二释放胶，通过所述第二释放胶与所述待转移晶圆的第二侧面进行粘接，以将所述待转移晶圆粘附在所述蓝膜上，并剥离所述暂态基板，其中，所述第一侧面与所述第二侧面正对设置；
    提供一滚轮，所述滚轮设于所述蓝膜底部，且与所述待转移晶圆相对设置，通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下自动进行裂片。
  2. 根据权利要求1所述的转移方法，其特征在于，所述剩余切割道为V型或U型。
  3. 根据权利要求2所述的转移方法，其特征在于，所述通过所述第一释放胶与所述待转移晶圆的第一侧面进行粘接，以将所述待转移晶圆粘附在所述暂态基板上，并剥离所述生长基板，包括：
    在所述暂态基板上涂覆或者贴覆第一释放胶，将所述暂态基板固定在所述待转移晶圆与所述生长基板相对的一面上；
    通过激光剥离所述生长基板，将所述待转移晶圆转移到所述暂态基板上。
  4. 根据权利要求3所述的转移方法，其特征在于，所述通过所述第二释放胶与所述待转移晶圆的第二侧面进行粘接，以将所述待转移晶圆粘附在所述蓝膜上，并剥离所述暂态基板，包括：
    在所述蓝膜上涂覆或者贴覆第二释放胶，将所述蓝膜固定在所述待转移晶圆与所述暂态基板相对的一面上；
    在满足所述第二释放胶的释放条件下剥离所述暂态基板，将所述待转移晶圆转移到所述蓝膜上。
  5. 根据权利要求2所述的转移方法，其特征在于，所述提供一滚轮，所述滚轮设于所述蓝膜底部，且与所述待转移晶圆相对设置，通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下自动进行裂片，包括：
    提供一滚轮，将所述滚轮放置在所述蓝膜远离所述待转移晶圆的一面上；其中，所述滚轮位于所述剩余切割道的中间位置；
    通过所述滚轮将所述蓝膜顶起，使所述待转移晶圆上的剩余切割道在应力的作用下断裂，以对所述待转移晶圆自动进行裂片。
  6. 根据权利要求3所述的转移方法，其特征在于，在所述通过激光剥离所述生长基板，将所述待转移晶圆转移到所述暂态基板上之后，还包括：
    通过盐酸对所述待转移晶圆与所述生长基板接触的一面进行清洗。
  7. 根据权利要求4所述的转移方法，其特征在于，所述第一释放胶和所述第二释放胶的释放条件不同。
  8. 根据权利要求7所述的转移方法，其特征在于，所述第一释放胶为光解胶，所述第二释放胶为热解胶；
    所述在满足所述第二释放胶的释放条件下剥离所述暂态基板，包括：
    通过激光照射所述暂态基板，解除所述第二释放胶的粘性，使所述暂态基板从所述待转移晶圆上剥离下来。
  9. 根据权利要求7所述的转移方法，其特征在于，所述第一释放胶为热解胶，所述第二释放胶为光解胶；
    所述在满足所述第二释放胶的释放条件下剥离所述暂态基板，包括：
    通过对所述暂态基板进行加热，解除所述第二释放胶的粘性，使所述暂态基板从所述待转移晶圆上剥离下来。
  10. 一种显示装置，其特征在于，所述显示装置包括固定有LED芯片的显示基板，所述LED芯片采用上述权利要求1-9任一项所述的转移方法进行转移。
PCT/CN2020/090290 2020-05-14 2020-05-14 一种转移方法及显示装置 WO2021226945A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2020/090290 WO2021226945A1 (zh) 2020-05-14 2020-05-14 一种转移方法及显示装置
US17/347,144 US11695091B2 (en) 2020-05-14 2021-06-14 Transfer method, display device, and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/090290 WO2021226945A1 (zh) 2020-05-14 2020-05-14 一种转移方法及显示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/347,144 Continuation US11695091B2 (en) 2020-05-14 2021-06-14 Transfer method, display device, and storage medium

Publications (1)

Publication Number Publication Date
WO2021226945A1 true WO2021226945A1 (zh) 2021-11-18

Family

ID=78511857

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/090290 WO2021226945A1 (zh) 2020-05-14 2020-05-14 一种转移方法及显示装置

Country Status (2)

Country Link
US (1) US11695091B2 (zh)
WO (1) WO2021226945A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150073526A (ko) * 2013-12-23 2015-07-01 광주과학기술원 레이저 차단층을 이용한 발광 다이오드의 전사방법
CN110828364A (zh) * 2019-11-20 2020-02-21 广东省半导体产业技术研究院 巨量转移方法、显示装置的制作方法和显示装置
CN110998824A (zh) * 2019-11-21 2020-04-10 重庆康佳光电技术研究院有限公司 一种led晶粒转移方法
CN111048634A (zh) * 2019-12-26 2020-04-21 重庆康佳光电技术研究院有限公司 一种Micro LED转移方法及背板
CN111063649A (zh) * 2019-12-03 2020-04-24 深圳市华星光电半导体显示技术有限公司 Micro LED的转移方法及转移装置
CN111128789A (zh) * 2018-10-31 2020-05-08 昆山工研院新型平板显示技术中心有限公司 微元件的转移装置及其转移方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150073526A (ko) * 2013-12-23 2015-07-01 광주과학기술원 레이저 차단층을 이용한 발광 다이오드의 전사방법
CN111128789A (zh) * 2018-10-31 2020-05-08 昆山工研院新型平板显示技术中心有限公司 微元件的转移装置及其转移方法
CN110828364A (zh) * 2019-11-20 2020-02-21 广东省半导体产业技术研究院 巨量转移方法、显示装置的制作方法和显示装置
CN110998824A (zh) * 2019-11-21 2020-04-10 重庆康佳光电技术研究院有限公司 一种led晶粒转移方法
CN111063649A (zh) * 2019-12-03 2020-04-24 深圳市华星光电半导体显示技术有限公司 Micro LED的转移方法及转移装置
CN111048634A (zh) * 2019-12-26 2020-04-21 重庆康佳光电技术研究院有限公司 一种Micro LED转移方法及背板

Also Published As

Publication number Publication date
US11695091B2 (en) 2023-07-04
US20210359156A1 (en) 2021-11-18

Similar Documents

Publication Publication Date Title
JP4461616B2 (ja) 素子の転写方法、素子保持基板の形成方法、及び素子保持基板
KR100853410B1 (ko) 소자의 전사방법 및 이를 이용한 소자의 배열방법,화상표시장치의 제조방법
WO2021184688A1 (zh) 一种led芯片的固晶方法及显示装置
CN112582520B (zh) 微发光二极管转移方法及显示面板
CN110838502B (zh) 发光二极管芯片及制作和转移方法、显示装置及制作方法
JP2003077940A (ja) 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003007986A (ja) 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003203886A (ja) 素子の分離方法及び素子の転写方法
WO2020087815A1 (zh) 一种微型元件的批量转移方法
JP2003347524A (ja) 素子の転写方法、素子の配列方法及び画像表示装置の製造方法
WO2023082971A1 (zh) 芯片转移方法、显示面板及显示装置
JP2003332523A (ja) 素子の転写方法、素子の配列方法及び画像表示装置の製造方法
WO2004030053A1 (ja) 薄型半導体チップの製造方法
WO2014110982A1 (zh) 一种基于激光剥离的半导体发光器件的制备方法
WO2021226945A1 (zh) 一种转移方法及显示装置
JP2013103959A (ja) 半導体用接着シート
WO2020258644A1 (zh) 一种microled芯片的转移方法
CN113675129A (zh) 粘附力可调控衬底及其在转移方面的应用
CN113675079B (zh) 一种转移方法及显示装置
CN100392810C (zh) 蓝宝石衬底减薄工序中的粘片方法
TWI377614B (en) Method for forming adhesive dies singulated from a wafer
CN116314540A (zh) micro-LED芯片的衬底剥离与键合方法
CN112967990B (zh) 芯片处理方法、led芯片及显示装置
JP2003218402A (ja) 素子の配列方法及び画像表示装置の製造方法
CN115621377A (zh) 微型led芯片的转移方法、显示模组和显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20935493

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20935493

Country of ref document: EP

Kind code of ref document: A1