WO2020087815A1 - 一种微型元件的批量转移方法 - Google Patents

一种微型元件的批量转移方法 Download PDF

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Publication number
WO2020087815A1
WO2020087815A1 PCT/CN2019/076361 CN2019076361W WO2020087815A1 WO 2020087815 A1 WO2020087815 A1 WO 2020087815A1 CN 2019076361 W CN2019076361 W CN 2019076361W WO 2020087815 A1 WO2020087815 A1 WO 2020087815A1
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Prior art keywords
micro
transfer
substrate
elements
transfer substrate
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PCT/CN2019/076361
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English (en)
French (fr)
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米磊
郭恩卿
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昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Priority to KR1020217016398A priority Critical patent/KR102530314B1/ko
Publication of WO2020087815A1 publication Critical patent/WO2020087815A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present application relates to the field of semiconductor technology, in particular to a method for batch transfer of micro-elements.
  • Micro-LEDs are difficult to grow directly on glass substrates, and it is necessary to rely on transfer technology to transfer Micro-LEDs grown on other substrates to glass substrates.
  • transfer technology to transfer Micro-LEDs grown on other substrates to glass substrates.
  • the technical problem mainly solved by the present application is to provide a batch transfer method of micro-elements, which can simplify the transfer equipment, reduce the difficulty of the transfer process, and improve the transfer efficiency.
  • a technical solution adopted by the present application is to provide a batch transfer method of micro-elements.
  • the method includes: providing a plurality of micro-elements and a first transfer substrate, the plurality of micro-elements are arranged on a supply substrate , The first surface of the first transfer substrate is sticky; the first transfer substrate is attached to the supply substrate to bond the first surface of the first transfer substrate to the first surfaces of the plurality of micro-elements; the supply substrate is removed to expose The second surfaces of the plurality of microelements; providing a second transfer substrate, bonding the second transfer substrate to the first transfer substrate, and bonding the first surface of the second transfer substrate to the second surfaces of the plurality of microelements; removing The first transfer substrate exposes the first surfaces of the plurality of micro-elements; a target substrate is provided, the target substrate is aligned with the second transfer substrate, and the plurality of micro-elements are transferred to the target substrate.
  • the local area of the first surface of the first transfer substrate has adhesiveness.
  • the method includes: forming a wrap layer on the first surface of the first transfer substrate, and the wrap layer covers the second surfaces and side surfaces of the plurality of micro-elements.
  • the wrapping layer after forming the wrapping layer on the first surface of the first transfer substrate, it includes: patterning the wrapping layer to expose a plurality of micro-elements that do not need to be transferred.
  • the wrapping layer material is a photosensitive resin material
  • the photosensitive layer is semi-cured to make the wrapping layer sticky, so that the first surface of the second transfer substrate is bonded to the second surfaces of the plurality of micro-elements.
  • the first surface of the second transfer substrate is processed to make the first surface of the second substrate sticky, so that the first surface of the second transfer substrate is bonded to the second surfaces of the plurality of micro-elements.
  • the wrapping layer is a non-transparent material.
  • the cladding layer material is photosensitive resin material, silicon oxide material or silicon nitride material.
  • a coating layer is formed on the first surface of the first transfer substrate by coating, chemical vapor deposition or physical vapor deposition.
  • the supply substrate is peeled by laser; or the supply substrate is peeled by chemical etching.
  • the first surface of the first transfer substrate is coated with a viscous material to make it viscous, or the first surface of the first transfer substrate is coated with a heat-sensitive material or a photosensitive material, and the heat-sensitive material or the photosensitive material is followed up Process to make the first surface of the first transfer substrate sticky.
  • the first transfer substrate or the second transfer substrate is removed by mechanical force.
  • after transferring the plurality of micro-elements to the target substrate includes: packaging the target substrate.
  • the adhesion force of the second transfer substrate to the plurality of microelements is greater than the adhesion force of the first transfer substrate to the plurality of microelements.
  • the plurality of micro-elements are micro-light-emitting elements with a flip-chip structure or micro-light-emitting elements with a vertical structure.
  • the plurality of micro-elements are micro-light-emitting elements of vertical structure.
  • the method includes: removing the wrapping layer to expose the plurality of micro-elements; forming an insulating layer on the target substrate to form a flat Metallization layer; a metal film is formed on the planarization layer to form a common cathode layer.
  • the first transfer substrate and the second transfer substrate are glass substrates or resin substrates.
  • the present application provides a batch transfer method of micro-elements, which uses two transfer substrates as a transfer device to transfer the micro-elements to the target substrate in two steps.
  • the method uses simple transfer equipment, low transfer process difficulty, and high transfer efficiency.
  • a encapsulation layer can be formed on the micro-element.
  • the encapsulation layer can protect the micro-element from damage during the transfer process, and can also achieve selective transfer of the micro-element.
  • FIG. 1 is a schematic flowchart of a first embodiment of a batch transfer method of micro-elements of the present application
  • FIG. 2 is a schematic diagram of providing micro-elements in the second embodiment of the batch transfer method of micro-elements of the present application;
  • FIG. 3 is a schematic diagram of bonding the first transfer substrate and the supply substrate in the second embodiment of the batch transfer method of micro-elements of the present application;
  • FIG. 4 is a schematic diagram of removing the supply substrate in the second embodiment of the batch transfer method of micro-elements of the present application.
  • FIG. 5 is a schematic diagram of forming a wrapping layer in the second embodiment of the batch transfer method of micro-elements of the present application.
  • FIG. 6 is a schematic diagram of a graphical wrapping layer in a second embodiment of the batch transfer method of micro-elements of the present application.
  • FIG. 7 is a schematic diagram of bonding the second transfer substrate and the first transfer substrate in the second embodiment of the batch transfer method of micro-elements of the present application;
  • FIG. 8 is a schematic diagram of removing the first transfer substrate in the second embodiment of the batch transfer method of micro-elements of the present application.
  • FIG. 9 is a schematic diagram of bonding a target substrate and a second transfer substrate in a second embodiment of a batch transfer method of micro-elements of the present application.
  • FIG. 10 is a schematic diagram of removing the second transfer substrate in the second embodiment of the batch transfer method of micro-elements of the present application
  • FIG. 11 is a schematic diagram of removing the wrapping layer in the second embodiment of the batch transfer method of micro-elements of the present application
  • FIG. 12 is a schematic diagram of packaging micro-elements in the second embodiment of the batch transfer method of micro-elements of the present application.
  • FIG. 13 is a schematic diagram of forming a planarization layer in the third embodiment of the batch transfer method of micro-elements of the present application.
  • FIG. 14 is a schematic diagram of forming a metal layer in the third embodiment of the batch transfer method of micro-elements of the present application.
  • 15 is a schematic diagram of packaging micro-elements in the third embodiment of the batch transfer method of micro-elements of the present application.
  • the present application provides a batch transfer method of micro-elements, using two transfer substrates as a transfer device, and transferring the micro-elements to the target substrate in two steps. In this way, the entire transfer process does not require the use of transfer heads and complicated transfer equipment, which greatly simplifies the transfer difficulty.
  • the batch transfer method disclosed in this application can be used to transfer micro-LED devices (Micro-LED).
  • Micro-LEDs are used as an example for description, but it is not limited to this device, and can also be used to transfer other micro-elements, such as photodiodes Array detector (Photo-diode Array, PDA) diode array, MOS (Metal) Oxide Semiconductor (MOS) device, Micro-Electro-Mechanical Systems (MEMS) MEMS device, etc.
  • photodiodes Array detector Photo-diode Array, PDA
  • MOS Metal Oxide Semiconductor
  • MEMS Micro-Electro-Mechanical Systems
  • FIG. 1 is a schematic flowchart of a first embodiment of a batch transfer method for micro-elements of the present application.
  • the transfer method includes the following steps:
  • S101 Provide a plurality of micro-elements and a first transfer substrate, the plurality of micro-elements are arranged on the supply substrate, and the first surface of the first transfer substrate has viscosity.
  • the micro-element may be a Micro-LED
  • the supply substrate may be a sapphire substrate
  • a Micro-LED having a predetermined size and a predetermined type is grown on the sapphire substrate.
  • it is not limited to a sapphire substrate, and may be other substrates.
  • it may be a silicon-based substrate or a gallium nitride (GaN) substrate.
  • the micro-element may also be a photodiode array detector (Photo-diode Array, PDA) diode array, MOS (Metal, Oxide, Semiconductor, MOS) device, micro-electromechanical systems (Micro-Electro-Mechanical Systems, MEMS) ), But not limited to the examples listed here.
  • a photodiode array detector Photo-diode Array, PDA
  • MOS Metal, Oxide, Semiconductor
  • MEMS Micro-Electro-Mechanical Systems
  • the first transfer substrate is a substrate made of a hard material to play a fixing role, and may be, for example, a glass substrate, a polymer (resin) substrate, a sapphire substrate, or a ceramic substrate.
  • a sticky material needs to be coated on the first transfer substrate to make the first surface of the first transfer substrate sticky and play a stable bonding role. You can directly apply a material with viscosity, or you can apply a material with certain characteristics, and then perform subsequent processing on the material to make it viscous.
  • S102 Laminating the first transfer substrate and the supply substrate, and bonding the first surface of the first transfer substrate to the first surfaces of the plurality of micro-elements.
  • the first surface of the first transfer substrate may be provided with adhesive on the entire surface, so that accurate alignment is not required when the first transfer substrate is attached to the supply substrate, as long as the adhesive surface can cover the micro-device.
  • the first surface of the first transfer substrate may also be provided that the first surface of the first transfer substrate has a localized area on the first surface, so that when bonding, the adhesive area needs to be aligned with the area of the micro-component to be transferred. In this way The use area of the transfer substrate can be reduced, the cost is saved, and the non-adhesive area is left for easy handling.
  • the adhesive area can be provided only at the corresponding position of the micro-element to be transferred, so as to realize selective transfer.
  • S103 The supply substrate is removed, and the second surfaces of the plurality of micro-elements are exposed.
  • the supply substrate may be peeled off using a laser, or the supply substrate may be peeled off using chemical etching. After removing the supply substrate, the micro-components remain on the first transfer substrate due to adhesion.
  • S104 Provide a second transfer substrate, attach the second transfer substrate to the first transfer substrate, and bond the first surface of the second transfer substrate to the second surfaces of the plurality of micro-elements.
  • the second transfer substrate may be coated with a viscous material to make the second transfer substrate viscous, or the micro element may be covered with the viscous material to make the micro element viscous, so as to achieve the effect of bonding the second transfer substrate to the micro element.
  • the second transfer substrate is a substrate made of a hard material to play a fixing role, and may be, for example, a glass substrate, a polymer (resin) substrate, a sapphire substrate, or a ceramic substrate.
  • the material of the second transfer substrate may be the same as the first transfer substrate, or may be different from the first transfer substrate.
  • S105 Remove the first transfer substrate, and expose the first surfaces of the plurality of micro-elements.
  • the adhesion force of the second transfer substrate to the micro-element can be controlled to be greater than the adhesion force of the first transfer substrate to the micro-element to prevent the micro-element from falling off the second transfer substrate when the first transfer substrate is removed.
  • the first transfer substrate can be directly removed by mechanical force.
  • S106 Provide a target substrate, align the target substrate with the second transfer substrate, and transfer a plurality of micro-elements to the target substrate.
  • the target substrate is provided with a driving circuit and a contact electrode; the first surface of the micro-element is provided with an electrode, when the target substrate and the second transfer substrate are laminated, the electrode of the micro-element and the contact electrode of the target substrate should be aligned Fitting, so far the transfer of micro components is completed.
  • the Micro-LED device can be divided into a vertical structure and a flip-chip structure, the cathode and anode of the vertical structure Micro-LED are located on the upper and lower sides of the device, and the Yin-yang of the flip-chip structure Micro-LED The poles are located on the same side of the device, and the transfer method will be described in detail below by taking micro-elements of these two structures as examples.
  • the transfer method includes the following steps:
  • FIG. 2 is a schematic diagram of providing micro-elements in a second embodiment of the method for batch transferring micro-elements of the present application.
  • Micro-LED devices 10 arranged in sequence are formed on the supply substrate 20, and the Micro-LED devices 10 have a flip-chip structure, and the cathode and anode of the Micro-LED device 10 are formed on the first surface 101 away from the supply substrate 20.
  • FIG. 3 is a schematic diagram of bonding the first transfer substrate and the supply substrate in the second embodiment of the batch transfer method of micro-devices of the present application.
  • the first transfer substrate 30 is provided, the first transfer substrate 30 is a glass substrate, and the first surface 301 of the first transfer substrate 30 is coated with an adhesive material.
  • the adhesive material may be an organic adhesive glue, and the type and molecular structure of the specific glue are not limited herein.
  • the adhesive material may be an organic adhesive, such as thermoplastic vinyl polymers (polyvinyl acetate, polyvinyl alcohol, perchloroethylene, polyisobutylene, etc.), polyester, polyether, polyamide, polyacrylate, etc .; Thermosetting epoxy resin, phenolic resin, etc .; can also be rubber-based styrene-butadiene rubber, butyl rubber, phenolic-butyronitrile rubber, phenolic-chloroprene rubber, etc. It can be directly coated with a viscous material; it can also be coated with a material with certain characteristics, such as thermal or photo-induced viscous material, which is not viscous under normal conditions and becomes a viscous material under heating or light conditions.
  • thermoplastic vinyl polymers polyvinyl acetate, polyvinyl alcohol, perchloroethylene, polyisobutylene, etc.
  • polyester polyether
  • polyamide polyacrylate
  • Thermosetting epoxy resin phenolic resin, etc
  • FIG. 4 is a schematic diagram of removing the supply substrate in the second embodiment of the batch transfer method of micro-devices of the present application.
  • the supply substrate 20 is subjected to laser peeling, and the supply substrate 20 after the laser peeling is removed to leave the Micro-LED device 10 on the first transfer substrate 30, and at the same time, the first transfer substrate 30 is inverted by 180 degrees to make the Micro-LED device 10 up.
  • the peeling may be performed by other peeling methods such as chemical etching.
  • FIG. 5 is a schematic diagram of forming a wrapping layer in the second embodiment of the batch transfer method of micro-components of the present application.
  • a wrap layer 40 is formed on the first surface of the first transfer substrate 30.
  • the wrap layer 40 covers the first surface 301 of the first transfer substrate 30, and the specific wrap layer 40 covers the second surface and side surfaces of the Micro-LED device 10. That is, by providing the wrapping layer 40, the Micro-LED device 10 can be fully covered, so that the Micro-LED device 10 is more stably attached to the first transfer substrate 30.
  • the encapsulation layer 40 may be a viscous material or a non-tacky material, just a thin film, which fixes the Micro-LED device 10 by intermolecular force.
  • the material of the wrapping layer 40 is a photosensitive resin material, that is, a layer of photosensitive resin material is coated on the first surface 301 of the first transfer substrate 30 to form a wrapping layer
  • the photosensitive resin material may be photosensitive polymethyl Photopolymers such as methyl acrylate (PMMA), polydimethylsiloxane (PDMS) or polyimide (PI).
  • PMMA methyl acrylate
  • PDMS polydimethylsiloxane
  • PI polyimide
  • other processes may also be used to form the encapsulation layer.
  • the low temperature process is mainly used to avoid the influence of high temperature on the characteristics of the Micro-LED device 10 and the possibility of disturbing the position of the Micro-LED device 10 at high temperatures.
  • the material of the cladding layer 40 may be silicon oxide, silicon nitride material, such as SiO 2 , SiN x, or the like.
  • the coating layer is formed by chemical vapor deposition or physical vapor deposition.
  • the thickness of the wrapping layer is not limited, and it can cover the Micro-LED device 10.
  • FIG. 6 is a schematic diagram of a graphical wrapping layer in the second embodiment of the batch transfer method of micro-components of the present application.
  • the yellow light process is used to pattern the encapsulation layer, and the photosensitive resin near the Micro-LED device 10 that does not need to be transferred is removed, and the photosensitive resin near the Micro-LED device 10 that needs to be transferred is left.
  • the patterning of the encapsulation layer 40 can realize the selective transfer of the Micro-LED device 10.
  • FIG. 7 is a schematic diagram of bonding the second transfer substrate and the first transfer substrate in the second embodiment of the batch transfer method of micro-devices of the present application.
  • the second transfer substrate 50 is bonded to the first transfer substrate 30 to bond the second transfer substrate 50 to the patterned photosensitive resin layer.
  • the first surface 501 of the second transfer substrate 50 can be processed, for example, the second transfer substrate 50 is coated with an adhesive material to make the second transfer substrate 50 sticky; or the photosensitive resin material can be processed to make it It has adhesiveness to achieve the effect of the second transfer substrate 50 bonding the patterned photosensitive resin layer.
  • the photosensitive resin material has a semi-curing temperature and a full curing temperature, and has a certain viscosity when the photosensitive resin material is in a semi-cured state. Therefore, the photosensitive resin material can be made sticky by controlling the curing temperature.
  • FIG. 8 is a schematic diagram of removing the first transfer substrate in the second embodiment of the batch transfer method of micro-devices of the present application.
  • the first transfer substrate 30 is removed, and the electrodes of the Micro-LED device 10 are exposed.
  • the adhesive force of the second transfer substrate 50 to the Micro-LED device 10 is controlled to be greater than the adhesive force of the first transfer substrate 30 to the Micro-LED device 10 to prevent the Micro-LED device 10 from removing the first transfer substrate 30
  • the second transfer substrate 50 falls off. Specifically, it can be achieved by selecting viscous materials with different viscosities.
  • the height of the Micro-LED device with and without the encapsulation layer is different.
  • the LED device is relatively high and can bond the second transfer substrate 50; but the Micro-LED device without the wrapping layer is not high enough to bond the second transfer substrate 50; therefore, after the first substrate 30 is peeled off, it is not bonded to the second transfer substrate 50
  • the Micro-LED device 10 on the second transfer substrate 50 will drop along with the first transfer substrate 30, and will not remain on the second transfer substrate 50 to achieve selective transfer.
  • FIG. 9 is a schematic diagram of bonding the target substrate and the second transfer substrate in the second embodiment of the batch transfer method of micro devices of the present application.
  • a target substrate 60 is provided.
  • a drive circuit and a contact electrode 601 are provided on the target substrate 60, the second transfer substrate 50 is aligned with the target substrate 60, and the cathode and anode of the Micro-LED device 10 are combined and connected to the contact electrode 601.
  • FIG. 10 is a schematic diagram of removing the second transfer substrate in the second embodiment of the batch transfer method of micro-devices of the present application. After the electrodes are connected and connected, the second transfer substrate is removed to complete the transfer of the Micro-LED device 10. Among them, the second transfer substrate 50 can be directly removed by mechanical force.
  • FIG. 11 is a schematic diagram of removing the wrapping layer in the second embodiment of the batch transfer method of micro-components of the present application.
  • the remaining photosensitive resin is removed using a yellow light process to expose the Micro-LED device 10 on the target substrate 60.
  • a corresponding process is used to remove the material of the wrapping layer.
  • FIG. 12 is a schematic diagram of packaged micro-devices in the second embodiment of the batch transfer method of micro-devices of the present application.
  • the micro-components are encapsulated to form an encapsulation layer 70 to protect the LED device and contact electrodes.
  • Specific packaging materials and packaging processes can use conventional materials and processes, which are not limited herein.
  • the wrapping layer may be directly encapsulated without removing the wrapping layer.
  • the remaining encapsulation layer can provide an additional layer of protection for the device.
  • the micro-LED device can be omnidirectionally wrapped by providing a wrapping layer, so that the Micro-LED device is evenly stressed, and at the same time, the Micro-LED device can be protected from damage during the transfer process.
  • the Micro-LED device to be selected is selectively covered, and the height difference between the Micro-LED device with the wrapping layer and the Micro-LED device without the wrapping layer is used to bond the second transfer substrate Selectively bond Micro-LED devices with wrapping layers to achieve selective transfer.
  • the Micro-LED device has a vertical structure, and the anode and cathode are located on the upper and lower sides of the device. After the device is transferred, an electrode on the other side needs to be fabricated.
  • FIG. 2 to FIG. 12 in combination.
  • the transfer steps of the vertical structure device and the flip structure device are the same.
  • FIG. 13 is a schematic diagram of forming a planarization layer in the third embodiment of the method for batch transfer of micro-devices of the present application.
  • an insulating layer film forming process is performed to form a planarization layer 80 and ensure that the N-type contact area of the Micro-LED is exposed.
  • conventional materials and processes can be used for the insulating layer material and the forming process, which is not limited herein.
  • FIG. 14 is a schematic diagram of forming a metal layer in the third embodiment of the batch transfer method of micro-devices of the present application.
  • a metal film 90 process is performed on the planarization layer 80 to form a common cathode of the Micro-LED device 10, and the metal layer can be selectively patterned.
  • conventional materials and processes may be used for the metal materials and forming processes, which are not limited herein.
  • FIG. 15 is a schematic diagram of packaged micro-devices in the third embodiment of the method for batch transfer of micro-devices of the present application.
  • the Micro-LED device 10 is packaged to protect the Micro-LED device 10 and the contact electrode 601.
  • Specific packaging materials and packaging processes can use conventional materials and processes, which are not limited herein.
  • the Micro-LED device can be selectively transferred by using the encapsulation layer.
  • the entire process is relatively difficult to transfer head equipment, and the equipment is simple.
  • the existing panel process can be used to achieve batch transfer effects without the need to develop complex transfer head equipment.
  • the wrapping layer covers and wraps the Micro-LED device, so that the Micro-LED device is evenly stressed, and at the same time, it can protect the Micro-LED device from damage during the transfer process.
  • the graphic wrapping layer can selectively cover and wrap the Micro-LED device, which can realize selective transfer. Compared with the transfer head, this kind of selective implementation is more flexible and less difficult.

Abstract

一种微型元件的批量转移方法，包括：提供微型元件和第一转移基板，多个微型元件排列在供给基板上，第一转移基板的第一表面具有粘性（S101）；将第一转移基板与供给基板贴合，使第一转移基板的第一表面与多个微型元件的第一表面粘合（S102）；去除供给基板，暴露出多个微型元件的第二表面（S103）；提供第二转移基板，将第二转移基板与第一转移基板贴合，使第二转移基板的第一表面与多个微型元件的第二表面粘合（S104）；去除第一转移基板，暴露出多个微型元件的第一表面（S105）；提供目标基板，将目标基板与第二转移基板对位贴合，将多个微型元件转移至目标基板上（S106）。

Description

一种微型元件的批量转移方法 【技术领域】
本申请涉及半导体技术领域，特别是涉及一种微型元件的批量转移方法。
【背景技术】
目前Micro-LED难以在玻璃基板上直接生长出来，需要依靠转移技术将在其他基板上生长的Micro-LED转移到玻璃基板上。鉴于Micro-LED微小的尺寸、较大的生长密度和巨大的转移数量，一般需要使用超高精度转移设备和转移头实现，这对转移设备和转移技术带来较大的困难与挑战。
【发明内容】
本申请主要解决的技术问题是提供一种微型元件的批量转移方法，能够简化转移设备、降低转移工艺难度、提高转移效率。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种微型元件的批量转移方法，所述方法包括：提供多个微型元件和第一转移基板，多个微型元件排列在供给基板上，第一转移基板的第一表面具有粘性；将第一转移基板与供给基板贴合，使第一转移基板的第一表面与多个微型元件的第一表面粘合；去除供给基板，暴露出多个微型元件的第二表面；提供第二转移基板，将第二转移基板与第一转移基板贴合，使第二转移基板的第一表面与多个微型元件的第二表面粘合；去除第一转移基板，暴露出多个微型元件的第一表面；提供目标基板，将目标基板与第二转移基板对位贴合，将多个微型元件转移至目标基板上。
其中，第一转移基板的第一表面的局部区域具有粘性。
其中，去除供给基板，暴露出多个微型元件的第二表面之后包括：在第一转移基板的第一表面形成包裹层，包裹层包覆多个微型元件的第二表面及侧面。
其中，在第一转移基板的第一表面形成包裹层之后包括：对包裹层 进行图形化，暴露出不需要被转移的多个微型元件。
其中，包裹层材料为感光型树脂材料，对感光型树脂进行半固化处理使包裹层具有粘性，以使第二转移基板的第一表面与多个微型元件的第二表面粘合。
对第二转移基板的第一表面进行处理，使第二基板的第一表面具有粘性，以使第二转移基板的第一表面与多个微型元件的第二表面粘合。
其中，所述包裹层为非透明材料。其中，包裹层材料为感光型树脂材料、氧化硅材料或氮化硅材料。
其中，利用涂覆、化学气相沉积或物理气相沉积法在第一转移基板的第一表面形成包裹层。
其中，利用激光剥离供给基板；或利用化学腐蚀的方式剥离供给基板。
其中，在第一转移基板的第一表面涂覆具有粘性的材料使其具有粘性，或在第一转移基板的第一表面涂覆热敏材料或光敏材料，对热敏材料或光敏材料进行后续处理以使第一转移基板的第一表面具有粘性。
其中，利用机械力去除第一转移基板或第二转移基板。
其中，将多个微型元件转移至目标基板上之后包括：对目标基板进行封装处理。
其中，第二转移基板对多个微型元件的粘合力大于第一转移基板对多个微型元件的粘合力。
其中，多个微型元件为倒装结构的微型发光元件或垂直结构的微型发光元件。
其中，多个微型元件为垂直结构的微型发光元件，将多个微型元件转移至目标基板上之后包括：去除包裹层，暴露出多个微型元件；在目标基板上进行绝缘层成膜，形成平坦化层；在平坦化层上进行金属成膜，形成共用阴极层。
其中，第一转移基板、第二转移基板为玻璃基板或树脂基板。
本申请的有益效果是：区别于现有技术的情况，本申请提供一种微型元件的批量转移方法，该方法利用两块转移基板作为转移设备，经两 步将微型元件转移至目标基板上。该方法所用转移设备简单、转移工艺难度低、转移效率高。
进一步地，在转移过程中，可以在微型元件上形成包裹层，包裹层能够保护微型元件在转移过程中不受损伤，同时也可实现对微型元件的选择性转移。
【附图说明】
图1是本申请微型元件的批量转移方法第一实施方式的流程示意图；
图2是本申请微型元件的批量转移方法第二实施方式中提供微型元件的示意图；
图3是本申请微型元件的批量转移方法第二实施方式中贴合第一转移基板与供给基板的示意图；
图4是本申请微型元件的批量转移方法第二实施方式中去除供给基板的示意图；
图5是本申请微型元件的批量转移方法第二实施方式中形成包裹层的示意图；
图6是本申请微型元件的批量转移方法第二实施方式中图形化包裹层的示意图；
图7是本申请微型元件的批量转移方法第二实施方式中贴合第二转移基板与第一转移基板的示意图；
图8是本申请微型元件的批量转移方法第二实施方式中去除第一转移基板的示意图；
图9是本申请微型元件的批量转移方法第二实施方式中贴合目标基板与第二转移基板的示意图；
图10是本申请微型元件的批量转移方法第二实施方式中去除第二转移基板的示意图
图11是本申请微型元件的批量转移方法第二实施方式中去除包裹层的示意图
图12是本申请微型元件的批量转移方法第二实施方式中封装微型 元件的示意图；
图13是本申请微型元件的批量转移方法第三实施方式中形成平坦化层的示意图；
图14是本申请微型元件的批量转移方法第三实施方式中形成金属层的示意图；
图15是本申请微型元件的批量转移方法第三实施方式中封装微型元件的示意图。
【具体实施方式】
为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。
本申请提供一种微型元件的批量转移方法，利用两块转移基板作为转移设备，经两步将微型元件转移至目标基板上。通过这种方式使整个转移过程不需要使用转移头及复杂的转移设备，极大程度的简化转移难度。本申请公开的批量转移方法可以用于转移微型发光二极管器件(Micro-LED)，这里以转移Micro-LED为例进行说明，但不限于该器件，还可用于其他微型元件的转移，如光电二极管阵列检测器(Photo-diode Array，PDA)的二极管阵列，MOS(Metal Oxide Semiconductor，MOS)器件，微机电系统(Micro-Electro-Mechanical Systems，MEMS)的MEMS器件等。
请参阅图1，图1是本申请微型元件的批量转移方法第一实施方式的流程示意图，在该实施方式中，转移方法包括如下步骤：
S101：提供多个微型元件和第一转移基板，多个微型元件排列在供给基板上，第一转移基板的第一表面具有粘性。
其中，微型元件为多个，微型元件可以是Micro-LED，供给基板可以是蓝宝石基板；在蓝宝石基板上生长出具有预定尺寸、预定类型的Micro-LED。在其他实施方式中不限于蓝宝石基板，也可以是其他基板。例如还可以是硅基基板或氮化镓(GaN)基板等。在其他实施方式中，微型元件还可以是光电二极管阵列检测器(Photo-diode Array，PDA)的 二极管阵列，MOS(Metal Oxide Semiconductor，MOS)器件，微机电系统(Micro-Electro-Mechanical Systems，MEMS)的MEMS器件等，但并不限于此处所列举的示例。
第一转移基板为硬性材料的基板，以起到固定作用，例如可以是玻璃基板、聚合物(树脂)基板、蓝宝石基板、陶瓷基板等。另外需在第一转移基板上涂覆粘性材料以使第一转移基板的第一表面具有粘性，起到稳定的粘结作用。可以直接涂覆具有粘性的材料，也可以是涂覆具有一定特性的材料，然后对该材料进行后续处理以使其具有粘性。
S102：将第一转移基板与供给基板贴合，使第一转移基板的第一表面与多个微型元件的第一表面粘合。
其中，可以设置第一转移基板的第一表面整面都具有粘性，这样在将第一转移基板与供给基板贴合时不需要精准对位，只要粘性面能覆盖微型元件即可。在其他实施方式中，也可以设置第一转移基板的第一表面局部区域具有粘性，这样在贴合时，需要将粘性区域与待转移的微型元件所在区域进行对位贴合，通过这种方式能够减小转移基板的使用面积，节约成本，还留有非粘性区域方便拿取操作，同时还可以只在需要转移的微型元件对应位置设置粘性区域，以能够实现选择性转移。
S103：去除供给基板，暴露出多个微型元件的第二表面。
其中，可以使用激光对供给基板进行剥离，也可以使用化学腐蚀的方式对供给基板进行剥离。去除供给基板后，微型元件因粘附力留在第一转移基板上。
S104：提供第二转移基板，将第二转移基板与第一转移基板贴合，使第二转移基板的第一表面与多个微型元件的第二表面粘合。
其中，可以在第二转移基板上涂覆粘性材料使第二转移基板具有粘性，也可以在微型元件上覆盖粘性材料使微型元件具有粘性，以达到第二转移基板与微型元件粘合的效果。第二转移基板为硬性材料的基板，以起到固定作用，例如可以是玻璃基板、聚合物(树脂)基板、蓝宝石基板、陶瓷基板等。第二转移基板的材料可以与第一转移基板相同，也可以与第一转移基板不同。
S105：去除第一转移基板，暴露出多个微型元件的第一表面。
其中，可以控制第二转移基板对微型元件的粘附力大于第一转移基板对微型元件的粘附力，以防在去除第一转移基板时，微型元件在第二转移基板上脱落。其中，可以直接利用机械力去除第一转移基板。
S106：提供目标基板，将目标基板与第二转移基板对位贴合，将多个微型元件转移至目标基板上。
其中，目标基板上设置有驱动电路及接触电极；微型元件的第一表面设置有电极，在将目标基板与第二转移基板贴合时，应将微型元件的电极与目标基板的接触电极对位贴合，至此完成对微型元件的转移。
该实施方式中，仅利用两块转移基板就实现了对微型元件的转移，所用转移设备简单、转移工艺难度低、转移效率高。
其中，在一实施方式中，根据电极所在位置，Micro-LED器件可以分为垂直结构和倒装结构，垂直结构Micro-LED的阴阳极位于器件的上下两侧，倒装结构Micro-LED的阴阳极位于器件的同一侧，下面将以这两种结构的微型元件为例对该转移方法进行详细说明。
请结合参阅图2-图12，在该实施方式中，转移方法包括如下步骤：
请参阅图2，图2是本申请微型元件的批量转移方法第二实施方式中提供微型元件的示意图。在供给基板20上形成依次排列的Micro-LED器件10，该Micro-LED器件10为倒装结构，且Micro-LED器件10的阴极和阳极形成在远离供给基板20的第一表面101上。
请参阅图3，图3是本申请微型元件的批量转移方法第二实施方式中贴合第一转移基板与供给基板的示意图。提供第一转移基板30，第一转移基板30为玻璃基板，第一转移基板30的第一表面301涂覆有粘性材料。其中，粘性材料可以是有机粘性胶，具体胶的种类、分子结构在此不做限定。例如粘性材料可以是有机胶黏剂，如热塑性的烯类聚合物(聚乙酸乙烯酯、聚乙烯醇、过氯乙烯、聚异丁烯等)、聚酯、聚醚、聚酰胺、聚丙烯酸酯等；热固性的环氧树脂、酚醛树脂等；也可以是橡胶类的丁苯橡胶、丁基橡胶、酚醛-丁腈胶、酚醛-氯丁胶等。可以直接涂覆具有粘性的材料；也可以是涂覆具有一定特性的材料，如热致或光 致粘性材料，在常规状态下不具有粘性，在加热或光照条件下变为具有粘性的材料。
请参阅图4，图4是本申请微型元件的批量转移方法第二实施方式中去除供给基板的示意图。将供给基板20进行激光剥离，将激光剥离后的供给基板20去除，使Micro-LED器件10留在第一转移基板30上，同时将第一转移基板30反转180度，使Micro-LED器件10朝上。在其他实施方式中，也可以使用化学腐蚀等其他剥离的方式进行剥离。
请参阅图5，图5是本申请微型元件的批量转移方法第二实施方式中形成包裹层的示意图。在第一转移基板30的第一表面形成包裹层40，包裹层40包覆第一转移基板30的第一表面301，具体的包裹层40包覆Micro-LED器件10的第二表面及侧面。即通过设置包裹层40能够将Micro-LED器件10进行全面覆盖，使Micro-LED器件10较稳定的贴附在第一转移基板30上。包裹层40可以是具有粘性的材料，也可以是没有粘性的材料，只是一层薄膜，通过分子间作用力对Micro-LED器件10进行固定。
在该实施方式中，包裹层40材料为感光型树脂材料，即在第一转移基板30的第一表面301涂覆一层感光型树脂材料形成包裹层，感光型树脂材料可以是光敏聚甲基丙烯酸甲酯(PMMA)、聚二甲基硅氧烷(PDMS)或者聚酰亚胺(PI)等光敏聚合物。在其他实施方式中，也可以利用其他工艺形成包裹层，主要选用低温工艺，以避免高温对Micro-LED器件10特性造成影响，以及避免在高温下Micro-LED器件10位置被扰动的可能。例如包裹层40材料可以是氧化硅、氮化硅材料，如SiO 2、SiN x等。利用化学气相沉积或物理气相沉积法沉积形成包裹层。对包裹层的厚度不做限定，能够覆盖包裹Micro-LED器件10即可。
请参阅图6，图6是本申请微型元件的批量转移方法第二实施方式中图形化包裹层的示意图。使用黄光工艺对包裹层进行图形化，将不需要被转移的Micro-LED器件10附近的感光树脂去除，需要被转移的Micro-LED器件10附近的感光树脂留下。通过对包裹层40进行图形化能够实现选择性转移Micro-LED器件10。
请参阅图7，图7是本申请微型元件的批量转移方法第二实施方式中贴合第二转移基板与第一转移基板的示意图。将第二转移基板50与第一转移基板30贴合，使第二转移基板50粘结图形化光感树脂层。其中，可以对第二转移基板50的第一表面501进行处理，如在第二转移基板50上涂覆粘性材料以使第二转移基板50具有粘性；也可以对光感树脂材料进行处理使其具有粘性，以达到第二转移基板50粘结图形化光感树脂层的效果。具体地，光感树脂材料具有半固化温度和全固化温度，在光感树脂材料处于半固化状态时具有一定的粘性，因此通过控制固化温度能够实现使光感树脂材料具有粘性。
请参阅图8，图8是本申请微型元件的批量转移方法第二实施方式中去除第一转移基板的示意图。将第一转移基板30去除，使Micro-LED器件10的电极裸露出来。其中控制第二转移基板50对Micro-LED器件10的粘结力大于第一转移基板30对Micro-LED器件10的粘结力，以防去除第一转移基板30时，Micro-LED器件10从第二转移基板50上脱落。具体地，可以通过选择不同粘度的粘性材料来实现。其中，在将第二转移基板50与第一转移基板30贴合时，由于包裹层40的存在，带有包裹层与不带包裹层的Micro-LED器件的高度不同，带有包裹层的Micro-LED器件较高，能够粘合第二转移基板50；而没有包裹层的Micro-LED器件高度不够，不能粘合第二转移基板50；因此，剥离第一基板30后，没有粘合在第二转移基板50上的Micro-LED器件10会随第一转移基板30掉落，没有留在第二转移基板50上，实现选择性转移。
请参阅图9，图9是本申请微型元件的批量转移方法第二实施方式中贴合目标基板与第二转移基板的示意图。提供目标基板60，目标基板60上设置有驱动电路及接触电极601，将第二转移基板50与目标基板60对位贴合，将Micro-LED器件10的阴阳极与接触电极601结合连接。
请参阅图10，图10是本申请微型元件的批量转移方法第二实施方式中去除第二转移基板的示意图。电极结合连接后去除第二转移基板，完成Micro-LED器件10的转移。其中，可以直接利用机械力去除第二转移基板50。
请参阅图11，图11是本申请微型元件的批量转移方法第二实施方式中去除包裹层的示意图。使用黄光工艺将剩余的感光树脂去除，使目标基板60上的Micro-LED器件10裸露出来。在其他实施方式中，根据包裹层的材料，选用对应的工艺去除包裹层材料。
请参阅图12，图12是本申请微型元件的批量转移方法第二实施方式中封装微型元件的示意图。对微型元件进行封装处理，形成封装层70，以保护LED器件及接触电极。具体的封装材料和封装工艺可以选用常规材料和工艺，在此不做限定。
在其他实施方式中，如果包裹层选用的是透明材料，可以不需要去除包裹层，直接进行封装。剩余的包裹层能够对器件起到多一层保护作用。
以上，在该实施方式中，通过设置包裹层能够全方位包裹Micro-LED器件，使Micro-LED器件受力均匀，同时可保护Micro-LED器件在转移过程中不受损伤。另外通过图形化包裹层，选择性包覆要被选择的Micro-LED器件，利用带有包裹层Micro-LED器件与不带包裹层Micro-LED器件的高度差，在粘结第二转移基板时选择性粘结带有包裹层的Micro-LED器件，实现选择性转移。
在另一实施方式中，Micro-LED器件为垂直结构，其阴阳极位于器件的上下两侧，在器件转移完成后，还需要制作另一面的电极。
具体地，请结合参阅图2-图12，对垂直结构器件的转移与倒装结构器件的转移步骤相同，具体请参阅上述实施方式的描述，在此不再赘述。
请参阅图13，图13是本申请微型元件的批量转移方法第三实施方式中形成平坦化层的示意图。去除第二转移基板及包裹层之后，进行绝缘层成膜工艺，形成平坦化层80，并保证Micro-LED的N型接触区裸露。其中，绝缘层材料及形成工艺可以使用常规材料与工艺，在此不做限定。
请参阅图14，图14是本申请微型元件的批量转移方法第三实施方式中形成金属层的示意图。在平坦化层80上进行金属成膜90工艺，形成Micro-LED器件10的共用阴极，并可选择性图形化金属层。其中， 金属材料及形成工艺可以使用常规材料与工艺，在此不做限定。
请参阅图15，图15是本申请微型元件的批量转移方法第三实施方式中封装微型元件的示意图。对Micro-LED器件10进行封装处理，保护Micro-LED器件10及接触电极601。具体的封装材料和封装工艺可以选用常规材料和工艺，在此不做限定。
以上方案，通过使用包裹层可选择性转移Micro-LED器件，整个流程相对转移头类设备工艺难度低，设备简单，使用现有的面板工艺即可实现批量转移效果，无须开发复杂的转移头设备。同时包裹层覆盖包裹Micro-LED器件，使Micro-LED器件受力均匀，同时可保护Micro-LED器件在转移过程中不受损伤。再次，可图形化的包裹层选择性覆盖包裹Micro-LED器件，可实现选择性转移，较转移头而言，此类选择性的实现更加灵活，难度较低。
以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (17)

  1. 一种微型元件的批量转移方法，所述方法包括：
    提供微型元件和第一转移基板，多个所述微型元件排列在供给基板上，所述第一转移基板的第一表面具有粘性；
    将所述第一转移基板与所述供给基板贴合，使所述第一转移基板的第一表面与多个所述微型元件的第一表面粘合；
    去除所述供给基板，暴露出多个所述微型元件的第二表面；
    提供第二转移基板，将所述第二转移基板与所述第一转移基板贴合，使所述第二转移基板的第一表面与多个所述微型元件的第二表面粘合；
    去除所述第一转移基板，暴露出多个所述微型元件的第一表面；
    提供目标基板，将所述目标基板与所述第二转移基板对位贴合，将多个所述微型元件转移至所述目标基板上。
  2. 根据权利要求1所述的微型元件的批量转移方法，其中，所述第一转移基板的第一表面的局部区域具有粘性。
  3. 根据权利要求1所述的微型元件的批量转移方法，其中，所述去除供给基板，暴露出多个所述微型元件的第二表面之后包括：
    在所述第一转移基板的第一表面形成包裹层，所述包裹层包覆多个所述微型元件的第二表面及侧面。
  4. 根据权利要求3所述的微型元件的批量转移方法，其中，所述包裹层材料为感光型树脂材料、氧化硅材料或氮化硅材料。
  5. 根据权利要求4所述的微型元件的批量转移方法，其中，所述在第一转移基板的第一表面形成包裹层之后包括：
    对所述包裹层进行图形化，暴露出不需要被转移的微型元件。
  6. 根据权利要求4所述的微型元件的批量转移方法，其中，所述将第二转移基板与所述第一转移基板贴合，使所述第二转移基板的第一表面与多个所述微型元件的第二表面粘合包括：
    所述包裹层材料为感光型树脂材料时，对所述感光型树脂进行半固化处理使所述包裹层具有粘性，以使所述第二转移基板的第一表面与多 个所述微型元件的第二表面粘合。
  7. 根据权利要求4所述的微型元件的批量转移方法，其中，所述将第二转移基板与所述第一转移基板贴合，使所述第二转移基板的第一表面与多个所述微型元件的第二表面粘合包括：
    对所述第二转移基板的第一表面进行处理，使所述第二基板的第一表面具有粘性，以使所述第二转移基板的第一表面与多个所述微型元件的第二表面粘合。
  8. 根据权利要求7所述的微型元件的批量转移方法，其中，所述第二转移基板对多个所述微型元件的粘合力大于所述第一转移基板对多个所述微型元件的粘合力。
  9. 根据权利要求3所述的微型元件的批量转移方法，其中，所述在第一转移基板的第一表面形成包裹层包括：
    利用涂覆、化学气相沉积或物理气相沉积法在所述第一转移基板的第一表面形成包裹层。
  10. 根据权利要求3所述的微型元件的批量转移方法，其中，所述包裹层为非透明材料。
  11. 根据权利要求1所述的微型元件的批量转移方法，其中，所述去除供给基板包括：
    利用激光剥离所述供给基板；或利用化学腐蚀的方式剥离所述供给基板。
  12. 根据权利要求1所述的微型元件的批量转移方法，其中，
    在所述第一转移基板的第一表面涂覆具有粘性的材料使其具有粘性，或在所述第一转移基板的第一表面涂覆热敏材料或光敏材料，对所述热敏材料或光敏材料进行后续处理以使所述第一转移基板的第一表面具有粘性。
  13. 根据权利要求1所述的微型元件的批量转移方法，其中，所述去除第一转移基板或第二转移基板包括：
    利用机械力去除所述第一转移基板或所述第二转移基板。
  14. 根据权利要求1所述的微型元件的批量转移方法，其中，所述将 微型元件转移至所述目标基板上之后包括：
    对所述目标基板进行封装处理。
  15. 根据权利要求1所述的微型元件的批量转移方法，其中，多个所述微型元件为倒装结构的微型发光元件或垂直结构的微型发光元件。
  16. 根据权利要求15所述的微型元件的批量转移方法，其中，多个所述微型元件为垂直结构的微型发光元件，所述将微型元件转移至所述目标基板上之后包括：
    去除所述包裹层，暴露出多个所述微型元件；
    在所述目标基板上进行绝缘层成膜，形成平坦化层；
    在所述平坦化层上进行金属成膜，形成共用阴极层。
  17. 根据权利要求1所述的微型元件的批量转移方法，其中，所述第一转移基板、第二转移基板为玻璃基板或树脂基板。
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