CN107889540A - 微发光二极管的转移方法、制造方法、装置和电子设备 - Google Patents
微发光二极管的转移方法、制造方法、装置和电子设备 Download PDFInfo
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Abstract
公开了一种微发光二极管(402)的转移方法、制造方法、装置和电子设备。该用于微发光二极管(402)转移的方法,包括:将至少一个微发光二极管(402)从原始衬底(406)转移到支撑体(412)上;将所述至少一个微发光二极管(402)从支撑体(412)转移到备用衬底(415)上;以及将所述至少一个微发光二极管(402)从备用衬底(415)转移到接收衬底(417)上。
Description
技术领域
本发明涉及用于显示的微发光二极管,更具体地,涉及一种用于微发光二极管转移的方法、一种用于制造微发光二极管装置的方法、一种微发光二极管装置以及一种包含微发光二极管装置的电子设备。
背景技术
微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。目前,微发光二极管技术正开始发展,工业界正期待有高品质的微发光二极管产品进入市场。高品质微发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。
在制造微发光二极管的过程中,首先在施主晶圆上形成微发光二极管,接着将微发光二极管转移到接受衬底上。接受衬底例如是显示屏。
在制造微发光二极管过程中的一个困难在于如何将微发光二极管从施主晶圆上转移到接受衬底上。在现有技术中,一般通过静电拾取的方式来执行所述转移。在静电拾取的过程中需要使用转移头阵列。转移头阵列的结构相对复杂,并需要考虑它的可靠性。制造转移头阵列需要额外的成本。在利用转移头阵列的拾取之前需要产生相位改变。另外,在使用转移头阵列的制造过程中,微发光二极管用于相位改变的热预算受到限制,通常小于350℃,或者更具体地,小于200℃;否则,微发光二极管的性能会劣化。在使用转移头阵列的制造过程中通常需要两次转移,即,从施主晶圆到承载晶圆的转移以及从承载晶圆到接受衬底的转移。
美国专利US 8,333,860B1公开了一种用于传送微器件的传送头阵列,其中通过向传送头中的电极施加电压来拾取微器件。该专利在此全部引入作为参考。
美国专利US 8,426,227B1公开了一种用于形成微发光二极管阵列的方法,其中,使用传送头来将微发光二极管阵列转移到接受衬底上。该专利在此全部引入作为参考。
发明内容
本发明的一个目的是提供一种用于微发光二极管转移的新技术方案。
根据本发明的一个实施例,提供了一种用于微发光二极管转移的方法,包括:在激光透明的原始衬底上形成微发光二极管;在接收衬底上设置各向异性导电层;使微发光二极管与接收衬底上的各向异性导电层接触;从原始衬底侧用激光照射原始衬底,以从原始衬底剥离微发光二极管;以及对各向异性导电层进行处理,使得微发光二极管与接收衬底上的接垫电连接。
优选地,对各向异性导电层进行处理的步骤还包括:使用辅助衬底,从微发光二极管侧对各向异性导电层施加压力。
优选地,,对各向异性导电层进行处理的温度是在150℃至200℃之间,所施加的压力是在1MPa至4MPa之间,以及施加压力的时间是在10 秒至30秒之间。
优选地,,辅助衬底是平板刚性衬底。
优选地,,在辅助衬底的表面上涂覆有临时键合聚合物,以及对各向异性导电层进行处理的步骤还包括:经由临时键合聚合物将辅助衬底与各向异性导电层键合;以及在施加压力之后,经由临时键合聚合物对辅助衬底进行解键合,以移除辅助衬底。
优选地,所述方法还包括:对临时键合聚合物进行蚀刻,以暴露微发光二极管的外延层;在微发光二极管的外延层上形成N电极;以及在N电极上进行封装。
优选地,各向异性导电层是各向异性导电膜、各向异性导电浆和各向异性导电胶带中的至少一种。
根据本发明的另一个实施例,提供了一种用于制造微发光二极管装置的方法,包括使用根据本发明的方法将微发光二极管转移到接收衬底上。
根据本发明的另一个实施例,提供了一种使用根据本发明的方法制造的微发光二极管装置,其中,微发光二极管通过各向异性导电层与接收衬底上的接垫电接触。
根据本发明的另一个实施例,提供了一种电子设备,包含根据本发明的微发光二极管装置。
根据本发明的另一个实施例,提供了一种用于微发光二极管转移的方法,包括:将至少一个微发光二极管从原始衬底转移到支撑体上;将所述至少一个微发光二极管从支撑体转移到备用衬底上;以及将所述至少一个微发光二极管从备用衬底转移到接收衬底上。
优选地,原始衬底是激光透明的,以及将至少一个微发光二极管从原始衬底转移到支撑体的步骤包括:将原始衬底安装到支撑体,其中,在原始衬底上形成有微发光二极管,在支撑体的表面上有光释放粘合剂,微发光二极管通过光释放粘合剂粘合到支撑体上,从原始衬底侧用激光照射原始衬底,用于从原始衬底剥离所述至少一个微发光二极管,以及从支撑体侧照射光,以释放未被剥离的微发光二极管;其中,将所述至少一个微发光二极管从支撑体转移备用衬底的步骤包括:将具有所述至少一个微发光二极管的支撑体键合到备用衬底,以及从支撑体侧照射光,以释放所述至少一个微发光二极管。
优选地,光释放粘合剂是紫外线照射胶带,以及支撑体是硬性的。
优选地,支撑体的材料是PET。
优选地,备用衬底在其表面上具有弹性体或聚合物,以及将所述至少一个微发光二极管从支撑体转移备用衬底的步骤还包括:通过弹性体或聚合物将所述至少一个微发光二极管键合到备用衬底;其中,将所述至少一个微发光二极管从备用衬底转移到接收衬底上的步骤还包括:将所述至少一个微发光二极管与接收衬底上的接垫对准;以及通过弹性体或聚合物剥离所述至少一个微发光二极管。
优选地,所述方法还包括:在生长衬底上形成红色微发光二极管;将红色微发光二极管转移到中间衬底上;以及将红色微发光二极管从中间衬底转移到原始衬底上。
优选地,所述方法还包括:在具有微发光二极管的接收衬底上涂覆聚合物;对聚合物进行固化;对聚合物进行蚀刻,以暴露微发光二极管的外延层;在微发光二极管的外延层上形成N电极;以及在N电极上进行封装。
根据本发明的另一个实施例,提供了一种用于制造微发光二极管装置的方法,包括使用根据本发明的方法将微发光二极管转移到接收衬底上。
根据本发明的另一个实施例,提供了一种使用根据本发明的方法制造的微发光二极管装置。
根据本发明的另一个实施例,提供了一种电子设备,包含根据本发明的微发光二极管装置。
另外,本领域技术人员应当理解,尽管现有技术中存在许多问题,但是,本发明的每个实施例或权利要求的技术方案可以仅在一个或几个方面进行改进,而不必同时解决现有技术中或者背景技术中列出的全部技术问题。本领域技术人员应当理解,对于一个权利要求中没有提到的内容不应当作为对于该权利要求的限制。
通过以下参照附图对本发明的示例性实施例的详细描述,本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例,并且连同其说明一起用于解释本发明的原理。
图1示出了根据本发明的方法的一个示意性实施例的流程图。
图2A至图2G示出了根据本发明的用于微发光二极管转移的一个例子。
图3示出了根据本发明的方法的另一个示意性实施例的流程图。
图4A至图4L示出了根据本发明的用于微发光二极管转移的另一个例子。
图5示出了根据本发明的方法的又一个示意性实施例的流程图。
图6A至图6F示出了根据本发明的用于红微发光二极管转移的例子。
图7A至图7L示出了根据本发明的用于微发光二极管转移的又一个例子。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到:除非另外具体说明,否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的,决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论,但在适当情况下,所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中,任何具体值应被解释为仅仅是示例性的,而不是作为限制。因此,示例性实施例的其它例子可以具有不同的值。
应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步讨论。
下面参照附图来描述本发明的实施例和例子。
图1示出了根据本发明的用于微发光二极管转移的方法的一个示意性实施例的流程图。
如图1所示,在步骤S1100,在激光透明的原始衬底上形成微发光二极管。
所述激光透明的原始衬底例如可以是蓝宝石衬底、SiC衬底等等。所述微发光二极管可以用于被安装到显示屏面板上。
本领域技术人员应当理解,可以在原始衬底上形成一个微发光二极管,或者也可以形成多个微发光二极管。例如,可以在激光透明的原始衬底上形成多个微发光二极管。所述多个微发光二极管可以形成阵列。
在一个例子中,在激光透明的原始衬底上形成多个微发光二极管的情况下,原始衬底还可以被分割或划分成多个片,用于更加灵活的转移。
在步骤S1200,使微发光二极管与接收衬底上预先设置的接垫接触。
例如,所述接收衬底是显示屏面板。
例如,所述接垫可以被设置成用于显示屏中的红色像素阵列、黄色像素阵列或蓝色像素阵列。
在一个例子中,在形成了多个微发光二极管的情况下,可以使多个微发光二极管中的至少一个微发光二极管与接收衬底上预先设置的至少一个接垫接触。所述至少一个微发光二极管可以是所述多个微发光二极管中的一个、多个或者全部。本领域技术人员应当理解,尽管在这里仅描述了希望被剥离的至少一个微发光二极管与接垫接触,但是,所述多个微发光二极管中的其他微发光二极管也可以与接垫接触。
例如,在接触的步骤中,可以使微发光二极管经由液体薄膜与接收衬底上预先设置的接垫接触。例如,所述液体薄膜例如可以包含助焊剂。在这里,通过液体薄膜(助焊剂)的表面张力,微发光二极管的剥离可以变得很容易,并且成功率很高。
在步骤S1300,从原始衬底侧用激光照射原始衬底,以从原始衬底剥离微发光二极管。
在一个例子中,在至少一个微发光二极管与接垫接触的情况下,可以从原始衬底侧用激光照射原始衬底上的至少一个区域,以从原始衬底剥离所述至少一个微发光二极管。例如,所述至少一个区域可以由技术人员选择。例如,所述至少一个区域可以分别与所述至少一个微发光二极管对应。所述至少一个区域可以仅是原始衬底上的部分区域,或者也可以是全部区域。
在另一个例子中,还可以偏移所述原始衬底,以用于转移另外的微发光二极管。
在另一个例子中,在使用原始衬底完成转移之后,为了应对在显示屏面板上的部分点处微发光二极管缺失的情况,可以使用另外的激光透明的备用衬底。例如,可以在另外的备用衬底上形成微发光二极管;使备用衬底上的微发光二极管与接收衬底上预先设置的接垫(在缺失位置)接触;以及从备用衬底侧用激光照射备用衬底,以从备用衬底剥离微发光二极管。以这种方式,可以进一步提高显示屏的质量。
在将微发光二极管转移到接收衬底之后,可以在接收衬底上形成微发光二极管阵列。
在将微发光二极管转移到接收衬底之后,还可以包括后续步骤。
例如,还可以在接收衬底上,对所剥离的微发光二极管进行回流焊接。还可以在微发光二极管上沉积负电极。可以在每种颜色的微发光二极管被转移之后进行回流焊。作为替代,也可以在所有颜色的微发光二极管被转移之后进行回流焊。
另外,还可以对所焊接的微发光二极管进行聚合物填充。例如,还可以用锥形电介质沉积来代替聚合物填充。
在另一个实施例中,本发明还包括一种用于制造微发光二极管装置的方法。该制造方法包括使用根据本发明的用于微发光二极管转移的方法将微发光二极管转移到接收衬底上。所述接收衬底例如是显示屏面板。所述微发光二极管装置例如是显示屏装置。
在另一个实施例中,本发明还包括一种微发光二极管装置,例如显示屏装置。可以使用根据本发明的用于制造微发光二极管装置的方法来制造所述微发光二极管装置。
相对于现有技术,在同等条件下,通过本发明的技术方案制造的微发光二极管更加简单、可靠并能够保持高性能,而且其生产率相对高且成本低。
在另一个实施例中,本发明还包括一种电子设备。该电子设备包含根据本发明的微发光二极管装置。例如,该电子设备可以是手机、平板电脑等。
在本发明的技术方案中,直接在原始衬底上形成微发光二极管,并通过激光剥离的方式将其转移到接收衬底上。本发明的技术方案是现有技术中没有想到的。
另外,通过本发明,可以选择性地转移微发光二极管。
另外,在本发明的技术方案中,可以进行仅一次转移,而在现有技术中需要进行两次转移。
另外,与现有技术相比,本发明的技术方案更加高效,成本更低,并且不会产生由于额外的热开销造成的产品性能劣化。
另外,与采用拾取头的现有技术相比,本发明不需要复杂的拾取系统,并因此通过本发明制造的产品的成本更低、更可靠。
另外,由于不需要现有技术中的微发光二极管与中间的承载衬底之间的临时键合,因此,通过本发明,可以进一步降低成本。
由于在本发明中不需要考虑采用拾取头的现有技术中所要考虑的键合层相位改变,因此,根据本发明的制造方法可以具有较高的生产率,额外的热负荷限制较小。因而,在同等条件下,所制造的微发光二极管具有更高的性能。
下面参照图2A至2G描述根据本发明的用于微发光二极管转移的一个例子。
如图2A所示,在诸如蓝宝石衬底的对激光透明的原始衬底1上形成微发光二极管2。所述微发光二极管2例如具有垂直微发光二极管结构。微发光二极管2例如包括n型掺杂的GaN层、多个量子阱结构、p型掺杂的GaN层、p金属电极和微凸块等。
如图2A所示,可以将多个微发光二极管2分割开来。
如图2B所示,将原始衬底1翻转过来,并将其与具有液体薄膜(例如,包含助焊剂)5的接收衬底4对齐。微发光二极管2上的微凸块与助焊剂接触。接收衬底4上预先设置有接垫3。例如,接垫3包括用于接收红色微发光二极管的接垫3r、用于接收蓝色微发光二极管的接垫3b和用于接收绿色微发光二极管的接垫3g。
如图2C所示,选择性地用激光6照射原始衬底上的部分区域7,从而将所形成的多个微发光二极管中的选定的微发光二极管2a、2b从原始衬底上剥离。
如图2D所示,将原始衬底1抬起。由于液体薄膜的表面张力的作用,很容易地将所选定的微发光二极管2a、2b剥离,而在原始衬底1上保留其他微发光二极管。
之后,可以移动原始衬底,并重复图2C至图2D的操作,这样可以将多个微发光二极管转移到接收衬底上。
如图2E所示,多个微发光二极管被转移到接收衬底4。
如图2F所示,例如通过回流焊将多个微光二极管焊接到接收衬底上。之后可以清洗助焊剂。
如图2G所示,在接收衬底上进行填充聚合物8并进行密封。之后,沉积N金属电极9,例如利用ITO材料。
图3示出了根据本发明的用于微发光二极管转移的方法的另一个示意性实施例的流程图。
如图3所示,在步骤S2100,在激光透明的原始衬底上形成微发光二极管。
在步骤S2200,在接收衬底上设置各向异性导电层。
例如,各向异性导电层是各向异性导电膜(ACF)、各向异性导电浆 (ACG)和各向异性导电胶带(ACT)中的至少一种。
在步骤S2300,使微发光二极管与接收衬底上的各向异性导电层接触。例如,可以使得微发光二极管与接收衬底上的各向异性导电层粘接在一起。在这个步骤中,例如可以先将微发光二极管与接收衬底上对应的接垫对准。
在步骤S2400,从原始衬底侧用激光照射原始衬底,以从原始衬底剥离微发光二极管。
例如,可以分别针对红发光二极管、绿发光二极管、蓝发光二极管分别执行上述步骤。由于分别针对三种发光二极管执行上述转移可以看作是对上述步骤的简单重复,因此,在这里不再重复。只要上述步骤中的每一个在一个方案中被执行过,则该方案落入本发明的保护范围。
在步骤S2500,对各向异性导电层进行处理,使得微发光二极管(电极) 与接收衬底上的接垫电连接。
在一个例子中,可以使用辅助衬底,从微发光二极管侧对各向异性导电层施加压力。例如,对各向异性导电层进行处理的温度可以在150℃至 200℃之间。例如,所施加的压力是在1MPa至4MPa之间。例如,施加压力的时间是在10秒至30秒之间。
在一个例子中,辅助衬底可以是平板刚性衬底。本申请的发明人发现,通过采用刚性衬底可以减小微发光二极管可能出现的移位。这是本领域普通技术人员尚未注意到的地方。
例如,可以在辅助衬底的表面上涂覆有临时键合聚合物。在这种情况下,步骤S2500还可以包括:经由临时键合聚合物将辅助衬底与各向异性导电层键合;以及在施加压力之后,经由临时键合聚合物对辅助衬底进行解键合,以移除辅助衬底。将辅助衬底与微发光二极管临时键合的好处在于,可以相对固定微发光二极管的位置,并减小对各向异性导电层进行处理期间微发光二极管的移位。
在上述处理之后,可以对微发光二极管执行通常的后续处理。例如,后续处理可以包括:对临时键合聚合物进行蚀刻,以暴露微发光二极管的外延层;在微发光二极管的外延层上形成N电极;以及在N电极上进行封装。
例如,接收衬底可以是显示衬底。在接收衬底上可以预先设置引线以及接垫,以便与微发光二极管电连接。
在这个实施例中,通过各向异性导电层来连接微发光二极管和接收衬底。这种方式处理相对简单,并且更适合于大规模生产。
在该另一个实施例中,本发明还包括一种用于制造微发光二极管装置的方法。该制造方法包括使用根据本发明的用于微发光二极管转移的方法将微发光二极管转移到接收衬底上。所述接收衬底例如是显示屏面板或显示衬底。所述微发光二极管装置例如是显示屏装置。
在该另一个实施例中,本发明还包括一种微发光二极管装置,例如显示屏装置。可以使用根据所述实施例的用于制造微发光二极管装置的方法来制造所述微发光二极管装置。在根据所述实施例的微发光二极管装置中,微发光二极管通过各向异性导电层与接收衬底上的接垫电接触,这与现有技术中的微发光二极管装置是不同的。
在该另一个实施例中,本发明还包括一种电子设备。该电子设备包含根据所述实施例的微发光二极管装置。例如,该电子设备可以是手机、平板电脑等。
图4A至图4L示出了根据本发明的用于微发光二极管转移的另一个例子。
如图4A所示,在诸如蓝宝石衬底的原始衬底201上具有红色微发光二极管202。在诸如显示衬底的接收衬底204上具有各向异性导电膜(ACF) 203。接收衬底204具有用于连接微发光二极管的信号引线205以及接垫 205’。
如图4B所示,以较小的力将原始衬底201(红色微发光二极管202) 与各向异性导电膜203接触。例如,可以把要转移的红色微发光二极管202 与接收衬底204上的接垫对准。用激光206照射原始衬底201,以选择性地剥离红色微发光二极管。
图4C中示出了剥离后的红色微发光二极管202r。
图4D示出了原始衬底207及其绿色微发光二极管208。要剥离的绿色微发光二极管与接收衬底204上的接垫对准。
图4E示出了绿色微发光二极管208以较小的力与各向异性导电膜203 接触。通过激光209选择性地剥离至少一个绿色微发光二极管。
图4F示出了剥离后的红色微发光二极管202r和绿色微发光二极管 208g。
图4G示出了原始衬底210及其蓝色微发光二极管211。要剥离的蓝色微发光二极管与接收衬底204上的接垫对准。
图4H示出了蓝色微发光二极管211以较小的力与各向异性导电膜 203接触。通过激光212选择性地剥离至少一个蓝色微发光二极管。
图4I示出了剥离后的红色微发光二极管202r、绿色微发光二极管208g 和蓝色微发光二极管211b。
在转移了三种颜色的发光二极管之后,可以检查是否存在缺陷,并进行修补。
图4J中示出了辅助衬底213。辅助衬底213是平板刚性衬底,例如玻璃衬底。在辅助衬底213上涂覆有聚合物214,例如3M LC5200/5320聚合物。该聚合物例如可以通过紫外线固化,并且可以通过红色激光解键合。
在图4K中,通过辅助衬底213对ACF 203进行处理。例如,处理条件为,温度在150℃至200℃之间,所施加的压力是在1MPa至4MPa之间,施加压力的时间是在10秒至30秒之间。通过所述处理,ACF 203在垂直方向上将微发光二极管与对应的接垫互连。
之后,(通过聚合物214)对辅助衬底213进行解键合。
在图4L中,执行通常的后续处理:对聚合物214进行蚀刻,以暴露微发光二极管的外延层;在微发光二极管的外延层上形成N电极215(例如,ITO材料电极);以及在N电极上进行封装216(例如,进行PET层叠)。
图5示出了根据本发明的用于微发光二极管转移的方法的又一个示意性实施例的流程图。
如图5所示,在步骤S3100,将至少一个微发光二极管从原始衬底转移到支撑体。例如,原始衬底是激光透明的。
在一个例子中,该步骤可以包括:将原始衬底安装到支撑体,其中,在原始衬底上形成有微发光二极管,在支撑体的表面上有光释放粘合剂,微发光二极管通过光释放粘合剂粘合到支撑体上;从原始衬底侧用激光照射原始衬底,用于从原始衬底剥离所述至少一个微发光二极管;以及从支撑体侧照射光,以释放未被剥离的微发光二极管。在这个例子中,支撑体是透光的。
例如,光释放粘合剂可以是紫外线照射胶带(UV Tape)。例如,支撑体是硬性的。在转移过程中微发光二极管的移位会影响最终产品的质量。本申请的发明人发现通过采用硬性的支撑体,可以减小这种移位。这是本领域普通技术人员尚未注意到的地方。例如,支撑体的材料可以是PET。
通常,红色微发光二极管很难在诸如蓝宝石衬底的激光透明衬底上形成。因此,在一个例子中,可以预先形成红色微发光二极管,然后将红色微发光二极管转移到原始衬底上,以用于最终转移到接收衬底上。例如,在该实施例中,可以在生长衬底上形成红色微发光二极管。接着,将红色微发光二极管转移到中间衬底上。之后,将红色微发光二极管从中间衬底转移到原始衬底上。
在步骤S3200,将所述至少一个微发光二极管从支撑体转移到备用衬底。
例如,备用衬底在其表面上具有弹性体或聚合物。例如,通过弹性体或聚合物将所述至少一个微发光二极管键合到备用衬底。
在一个例子中,该步骤还可以包括:将具有所述至少一个微发光二极管的支撑体键合到备用衬底,以及从支撑体侧照射光,以释放所述至少一个微发光二极管。
在步骤S3300,将所述至少一个微发光二极管从备用衬底转移到接收衬底上。
在一个例子中,该步骤还可以包括:将所述至少一个微发光二极管与接收衬底上的接垫对准;以及通过弹性体或聚合物剥离所述至少一个微发光二极管。
例如,可以分别针对红色微发光二极管、蓝色微发光二极管和绿色微发光二极管执行上述转移步骤。在这里不再重复描述。
在上述处理之后,可以对微发光二极管执行常规的后续处理。例如,后续处理可以包括:在具有微发光二极管的接收衬底上涂覆聚合物;对聚合物进行固化;对聚合物进行蚀刻,以暴露微发光二极管的外延层;在微发光二极管的外延层上形成N电极;以及在N电极上进行封装。
本发明的发明人发现,在微发光二极管的转移过程中,通常仅转移原始衬底上的部分微发光二极管。如果直接将微发光二极管转移到接收衬底上,则容易污染原始衬底上的剩余微发光二极管。在这个实施例中,通过经由中间的支撑体的转移,可以减小这种污染。
在该又一个实施例中,本发明还包括一种用于制造微发光二极管装置的方法。该制造方法包括使用根据所述实施例的用于微发光二极管转移的方法将微发光二极管转移到接收衬底上。所述接收衬底例如是显示屏面板或显示衬底。所述微发光二极管装置例如是显示屏装置。
在该又一个实施例中,本发明还包括一种微发光二极管装置,例如显示屏装置。可以使用根据所述实施例的用于制造微发光二极管装置的方法来制造所述微发光二极管装置。
在该又一个实施例中,本发明还包括一种电子设备。该电子设备包含根据所述实施例的微发光二极管装置。例如,该电子设备可以是手机、平板电脑等。
通常,红色微发光二极管不能直接形成在诸如蓝宝石衬底的激光透明的原始衬底上。因此,需要预先在另外的衬底上形成红色微发光二极管,然后将其转移到蓝宝石衬底上。图6A至图6示出了根据本发明的用于红微发光二极管转移的例子。
如图6A所示,在诸如GaAs衬底的生长衬底301上形成红色微发光二极管302。
如图6B所示,通过临时键合聚合物303,将红色微发光二极管302 与诸如硅衬底的中间衬底304键合。聚合物303例如是热释放胶带(TRT)。
如图6C所示,例如通过湿法蚀刻去除生长衬底301。
如图6D所示,诸如蓝宝石衬底的原始衬底306上涂覆有光刻胶305。通过光刻胶305,原始衬底306与红色微发光二极管302键合。光刻胶305 能够承受200℃以上的温度,通常250℃以上。
如图6E所示,在小于200℃的温度,对聚合物303进行处理,以去除中间衬底304。
如图6F所示,对光刻胶305执行O2等离子蚀刻,以便隔离各个红色微发光二极管302。
图7A至图7L示出了根据本发明的用于微发光二极管转移的又一个例子。
如图7A所示,原始衬底406上具有光刻胶405和红色微发光二极管 402。红色微发光二极管402被安装到到紫外线照射胶带411上。紫外线照射胶带411位于硬性的PET支撑体412上。通过激光413,选择性地剥离红色微发光二极管。
如图7B所示,从支撑体412侧照射紫外线,从而释放未被剥离的红色微发光二极管。
被剥离的红色微发光二极管402r很容易与原始衬底406脱离。如图 7C所示,被剥离的红色微发光二极管402r粘在紫外线照射胶带411上,而其他红色微发光二极管仍留在原始衬底406上。
如图7D所示,诸如玻璃衬底的备用衬底415上具有弹性体/聚合物 416。例如,可以通过旋凃的方式将弹性体/聚合物416涂覆到备用衬底415 上。弹性体/聚合物416例如可以是PDMS或3M LC5320,并且例如可以通过紫外线固化。
如图7E所示,从支撑体侧完全照射紫外线,从而释放红色微发光二极管及弹性体/聚合物416。
之后,例如,如果在微发光二极管上没有微凸起,则可以利用银浆对备用衬底415上的微发光二极管进行丝网印刷。
如图7F所示,将备用衬底415上的红色微发光二极管402r与接收衬底417上的接垫419对准。例如,接收衬底417是显示衬底,并包括信号引线418。例如,通过回流,将红色微发光二极管402r键合到接垫419。回流的温度例如可以大于260℃。之后通过激光剥离,将备用衬底415与接收衬底417分离。
图7G示出了分离后的接收衬底417。在接收衬底417上具有接垫419 和红色微发光二极管402r。
图7H示出了从备用衬底420向接收衬底417转移绿色微发光二极管 422g的示意图。备用衬底420具有弹性体/聚合物421。
图7I示出了分离后的接收衬底417。在接收衬底417上具有接垫419、红色微发光二极管402r和绿色微发光二极管422g。
图7J示出了从备用衬底423向接收衬底417转移蓝色微发光二极管 425b的示意图。备用衬底423具有弹性体/聚合物424。
图7K示出了分离后的接收衬底417。在接收衬底417上具有接垫419、红色微发光二极管402r、绿色微发光二极管422g和蓝色微发光二极管 425b。
在图7L中,对转移后的微发光二极管执行常规的后续处理:在具有微发光二极管的接收衬底上涂覆聚合物426;对聚合物426进行固化;对聚合物进行蚀刻,以暴露微发光二极管的外延层;在微发光二极管的外延层上形成N电极427;以及在N电极上进行封装(未示出)。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明,但是本领域的技术人员应该理解,以上例子仅是为了进行说明,而不是为了限制本发明的范围。本领域的技术人员应该理解,可在不脱离本发明的范围和精神的情况下,对以上实施例进行修改。本发明的范围由所附权利要求来限定。
Claims (10)
1.一种用于微发光二极管转移的方法,包括:
将至少一个微发光二极管从原始衬底转移到支撑体上;
将所述至少一个微发光二极管从支撑体转移到备用衬底上;以及
将所述至少一个微发光二极管从备用衬底转移到接收衬底上。
2.根据权利要求1所述的方法,其中,原始衬底是激光透明的,以及将至少一个微发光二极管从原始衬底转移到支撑体的步骤包括:
将原始衬底安装到支撑体,其中,在原始衬底上形成有微发光二极管,在支撑体的表面上有光释放粘合剂,微发光二极管通过光释放粘合剂粘合到支撑体上,
从原始衬底侧用激光照射原始衬底,用于从原始衬底剥离所述至少一个微发光二极管,以及
从支撑体侧照射光,以释放未被剥离的微发光二极管;
其中,将所述至少一个微发光二极管从支撑体转移备用衬底的步骤包括:
将具有所述至少一个微发光二极管的支撑体键合到备用衬底,以及
从支撑体侧照射光,以释放所述至少一个微发光二极管。
3.根据权利要求2所述的方法,其中,光释放粘合剂是紫外线照射胶带,以及支撑体是硬性的。
4.根据权利要求2所述的方法,其中,支撑体的材料是PET。
5.根据权利要求1或2所述的方法,其中,备用衬底在其表面上具有弹性体或聚合物,以及将所述至少一个微发光二极管从支撑体转移备用衬底的步骤还包括:
通过弹性体或聚合物将所述至少一个微发光二极管键合到备用衬底;
其中,将所述至少一个微发光二极管从备用衬底转移到接收衬底上的步骤还包括:
将所述至少一个微发光二极管与接收衬底上的接垫对准;以及
通过弹性体或聚合物剥离所述至少一个微发光二极管。
6.根据权利要求1所述的方法,还包括:
在生长衬底上形成红色微发光二极管;
将红色微发光二极管转移到中间衬底上;以及
将红色微发光二极管从中间衬底转移到原始衬底上。
7.根据权利要求1所述的方法,还包括:
在具有微发光二极管的接收衬底上涂覆聚合物;
对聚合物进行固化;
对聚合物进行蚀刻,以暴露微发光二极管的外延层;
在微发光二极管的外延层上形成N电极;以及
在N电极上进行封装。
8.一种用于制造微发光二极管装置的方法,包括使用根据权利要求1所述的方法将微发光二极管转移到接收衬底上。
9.一种使用根据权利要求8所述的方法制造的微发光二极管装置。
10.一种电子设备,包含根据权利要求9所述的微发光二极管装置。
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WO2016183845A1 (en) | 2016-11-24 |
JP2018504771A (ja) | 2018-02-15 |
US10193012B2 (en) | 2019-01-29 |
JP6546278B2 (ja) | 2019-07-17 |
EP3271951B1 (en) | 2019-03-20 |
US20170338374A1 (en) | 2017-11-23 |
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CN107889540B (zh) | 2019-06-21 |
EP3271951A4 (en) | 2018-02-21 |
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