JP5185344B2 - 半導体発光素子の製造方法および半導体発光素子 - Google Patents
半導体発光素子の製造方法および半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 150000004767 nitrides Chemical class 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims 2
- 230000001788 irregular Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 77
- 229910052594 sapphire Inorganic materials 0.000 description 58
- 239000010980 sapphire Substances 0.000 description 58
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- -1 Au—Sn Chemical class 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000749 nitanium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
第2の実施形態は、第1の実施形態よりもさらに製造工程を簡略化したものであり、積層膜5をパターニングせずに分断工程を行うものである。
2 第1メタル層
3 第2メタル層
4 コンタクト電極
5 積層膜
6 n電極
7 p電極
10 サファイア基板
11 p型窒化物半導体層
12 活性層
13 n型窒化物半導体層
Claims (4)
- 一主面に凹凸が形成された第1基板の前記一主面上に、n型窒化物半導体層、窒化物半導体の多重量子井戸構造を有する活性層、およびp型窒化物半導体層を、順に積層した積層膜を形成する工程と、
前記p型窒化物半導体層の上面に、複数の発光素子のそれぞれに対応する複数の第1電極を形成する工程と、
前記複数の第1電極および前記p型窒化物半導体層の表面を覆うように第1メタル層を形成する工程と、
前記n型窒化物半導体層から前記p型窒化物半導体層に向かうにつれて膜面の面積が連続的に減少するテーパ状になるように前記積層膜の一部をパターニングするとともに、第2基板の上面に形成され前記第1メタル層よりも融点の低い材料からなる第2メタル層を形成する工程と、
前記第1基板および前記第2基板を対向配置して、前記第1メタル層および前記第2メタル層を接合する工程と、
前記第1基板の、前記第1メタル層と反対側の面から、前記第2基板から見て逆テーパ状の前記発光素子の境界位置に沿って前記第1基板の分断または溝形成を行う工程と、
前記分断または溝形成された第1基板の、前記第1メタル層と反対側の面から、前記発光素子の形成領域に向けてレーザを照射して、前記第1基板を剥離する工程と、
剥離により露出した前記積層膜の表面の少なくとも一部に第2電極を形成する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記分断または溝形成を行う工程では、前記第1基板の、前記第1メタル層と反対側の面から、前記発光素子の境界位置に沿って、第1照射条件でレーザを照射し、
前記第1基板を剥離する工程では、前記第1基板の、前記第1メタル層と反対側の面から、前記発光素子の形成領域に向けて、前記第1照射条件とは異なる第2照射条件でレーザを照射することを特徴とする請求項1に記載の半導体発光素子の製造方法。 - 前記第1メタル層および第2メタル層を接合する前に、前記第1基板上の前記第1メタル層および前記積層膜を、前記複数の発光素子のそれぞれに対応づけてパターニングすることを特徴とする請求項1または2に記載の半導体発光素子の製造方法。
- 一主面に凹凸が形成された第1基板の前記一主面上に、n型窒化物半導体層、窒化物半導体の多重量子井戸構造を有する活性層、およびp型窒化物半導体層を、順に積層した積層膜を形成する工程と、
前記p型窒化物半導体層の上面に、複数の発光素子のそれぞれに対応する複数の第1電極を形成する工程と、
前記複数の第1電極および前記p型窒化物半導体層の表面を覆うように第1メタル層を形成する工程と、
前記n型窒化物半導体層から前記p型窒化物半導体層に向かうにつれて膜面の面積が連続的に減少するテーパ状になるように前記積層膜の一部をパターニングするとともに、第2基板の上面に形成され前記第1メタル層よりも融点の低い材料からなる第2メタル層を形成する工程と、
前記第1基板および前記第2基板を対向配置して、前記第1メタル層および前記第2メタル層を接合する工程と、
前記第1基板の、前記第1メタル層と反対側の面から、前記第2基板から見て逆テーパ状の前記発光素子の境界位置に沿って前記第1基板の分断または溝形成を行う工程と、
前記分断または溝形成された第1基板の、前記第1メタル層と反対側の面から、前記発光素子の形成領域に向けてレーザを照射して、前記第1基板を剥離する工程と、
剥離により露出した前記積層膜の表面の少なくとも一部に第2電極を形成する工程と、により製造されることを特徴とする半導体発光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2010198699A JP5185344B2 (ja) | 2010-09-06 | 2010-09-06 | 半導体発光素子の製造方法および半導体発光素子 |
US13/037,687 US8470625B2 (en) | 2010-09-06 | 2011-03-01 | Method of fabricating semiconductor light emitting device and semiconductor light emitting device |
EP11158123.7A EP2426741B1 (en) | 2010-09-06 | 2011-03-14 | Method of fabricating a semiconductor light emitting device |
Applications Claiming Priority (1)
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JP2010198699A JP5185344B2 (ja) | 2010-09-06 | 2010-09-06 | 半導体発光素子の製造方法および半導体発光素子 |
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JP2012059750A JP2012059750A (ja) | 2012-03-22 |
JP5185344B2 true JP5185344B2 (ja) | 2013-04-17 |
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Country Status (3)
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US (1) | US8470625B2 (ja) |
EP (1) | EP2426741B1 (ja) |
JP (1) | JP5185344B2 (ja) |
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JP5595813B2 (ja) * | 2010-07-09 | 2014-09-24 | 株式会社東海理化電機製作所 | 回路基板の製造方法 |
US20130130417A1 (en) * | 2011-11-22 | 2013-05-23 | Jar-Yu WU | Manufacturing method of a light-emitting device |
JP5996250B2 (ja) * | 2012-04-24 | 2016-09-21 | 株式会社ディスコ | リフトオフ方法 |
JP5792694B2 (ja) * | 2012-08-14 | 2015-10-14 | 株式会社東芝 | 半導体発光素子 |
BR112015008057A2 (pt) * | 2012-10-12 | 2017-07-04 | Asahi Kasei E Mat Corporation | substrato óptico, dispositivo emissor de luz semicondutor, e, método de fabricação do mesmo |
EP3271951B1 (en) | 2015-05-21 | 2019-03-20 | Goertek Inc. | Transferring method, manufacturing method of micro-led |
WO2016183844A1 (en) * | 2015-05-21 | 2016-11-24 | Goertek.Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
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WO2005104250A1 (en) * | 2004-04-20 | 2005-11-03 | Showa Denko K.K. | Production method of compound semiconductor light-emitting device wafer |
KR100631981B1 (ko) * | 2005-04-07 | 2006-10-11 | 삼성전기주식회사 | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 |
KR20060131327A (ko) * | 2005-06-16 | 2006-12-20 | 엘지전자 주식회사 | 발광 다이오드의 제조 방법 |
JP5016808B2 (ja) * | 2005-11-08 | 2012-09-05 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
KR100649763B1 (ko) | 2005-12-09 | 2006-11-27 | 삼성전기주식회사 | 수직구조 질화물 발광소자의 제조방법 |
JP2007214384A (ja) * | 2006-02-09 | 2007-08-23 | Rohm Co Ltd | 窒化物半導体素子 |
US7696523B2 (en) * | 2006-03-14 | 2010-04-13 | Lg Electronics Inc. | Light emitting device having vertical structure and method for manufacturing the same |
JP5232971B2 (ja) * | 2006-04-28 | 2013-07-10 | 豊田合成株式会社 | 窒化物系半導体発光素子の製造方法 |
DE102009018603B9 (de) * | 2008-04-25 | 2021-01-14 | Samsung Electronics Co., Ltd. | Leuchtvorrichtung und Herstellungsverfahren derselben |
JP5057398B2 (ja) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP2010171371A (ja) * | 2008-12-26 | 2010-08-05 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
US8324083B2 (en) * | 2008-09-30 | 2012-12-04 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor element |
JP2010109015A (ja) * | 2008-10-28 | 2010-05-13 | Panasonic Electric Works Co Ltd | 半導体発光素子の製造方法 |
JP2010198699A (ja) | 2009-02-26 | 2010-09-09 | Fujitsu Ten Ltd | 光ピックアップ装置及び光学ドライブ装置 |
JP2011040564A (ja) | 2009-08-11 | 2011-02-24 | Toshiba Corp | 半導体素子の製造方法および製造装置 |
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2011
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US20120056154A1 (en) | 2012-03-08 |
US8470625B2 (en) | 2013-06-25 |
EP2426741A2 (en) | 2012-03-07 |
JP2012059750A (ja) | 2012-03-22 |
EP2426741A3 (en) | 2014-10-01 |
EP2426741B1 (en) | 2019-01-30 |
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