BR112015008057A2 - substrato óptico, dispositivo emissor de luz semicondutor, e, método de fabricação do mesmo - Google Patents
substrato óptico, dispositivo emissor de luz semicondutor, e, método de fabricação do mesmoInfo
- Publication number
- BR112015008057A2 BR112015008057A2 BR112015008057A BR112015008057A BR112015008057A2 BR 112015008057 A2 BR112015008057 A2 BR 112015008057A2 BR 112015008057 A BR112015008057 A BR 112015008057A BR 112015008057 A BR112015008057 A BR 112015008057A BR 112015008057 A2 BR112015008057 A2 BR 112015008057A2
- Authority
- BR
- Brazil
- Prior art keywords
- manufacture
- light emitting
- emitting device
- semiconductor light
- optical substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012227299 | 2012-10-12 | ||
| JP2012230000 | 2012-10-17 | ||
| JP2012231861 | 2012-10-19 | ||
| JP2012280240 | 2012-12-21 | ||
| JP2013022576 | 2013-02-07 | ||
| JP2013111091 | 2013-05-27 | ||
| PCT/JP2013/075943 WO2014057808A1 (ja) | 2012-10-12 | 2013-09-25 | 光学基板、半導体発光素子及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112015008057A2 true BR112015008057A2 (pt) | 2017-07-04 |
Family
ID=50477279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112015008057A BR112015008057A2 (pt) | 2012-10-12 | 2013-09-25 | substrato óptico, dispositivo emissor de luz semicondutor, e, método de fabricação do mesmo |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20160056352A1 (pt) |
| EP (2) | EP2908353A4 (pt) |
| JP (2) | JP5719090B2 (pt) |
| KR (1) | KR20150052205A (pt) |
| CN (1) | CN104781941A (pt) |
| BR (1) | BR112015008057A2 (pt) |
| RU (1) | RU2015117522A (pt) |
| TW (2) | TW201603314A (pt) |
| WO (1) | WO2014057808A1 (pt) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201448263A (zh) * | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
| US9548419B2 (en) | 2014-05-20 | 2017-01-17 | Southern Taiwan University Of Science And Technology | Light emitting diode chip having multi microstructure substrate surface |
| KR102200027B1 (ko) * | 2014-06-23 | 2021-01-11 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| JP6415909B2 (ja) * | 2014-09-17 | 2018-10-31 | 住友化学株式会社 | 窒化物半導体テンプレートの製造方法 |
| DE102015102365A1 (de) * | 2015-02-19 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Strahlungskörper und Verfahren zur Herstellung eines Strahlungskörpers |
| US11217735B2 (en) * | 2015-02-20 | 2022-01-04 | Luminus, Inc. | LED package with surface textures and methods of formation |
| WO2017014100A1 (ja) * | 2015-07-17 | 2017-01-26 | Ｓｃｉｖａｘ株式会社 | 発光素子 |
| US20180254380A1 (en) * | 2015-09-30 | 2018-09-06 | Asahi Kasei Kabushiki Kaisha | Optical substrate, substrate for semiconductor light emitting device and semiconductor light emitting device |
| CN108476562B (zh) * | 2015-12-10 | 2020-01-21 | 王子控股株式会社 | 基板、光学元件、模具、有机发光元件、有机薄膜太阳能电池、以及基板的制造方法 |
| DE102015122768A1 (de) * | 2015-12-23 | 2017-06-29 | Temicon Gmbh | Plattenförmiges optisches Element zur Auskopplung von Licht |
| DE102016101442A1 (de) * | 2016-01-27 | 2017-07-27 | Osram Opto Semiconductors Gmbh | Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement |
| TWI575770B (zh) * | 2016-02-18 | 2017-03-21 | Li chong-wei | Patterned substrate |
| CN107452849B (zh) * | 2016-06-01 | 2019-08-27 | 光宝光电(常州)有限公司 | 发光二极管封装结构 |
| JP6818479B2 (ja) | 2016-09-16 | 2021-01-20 | デクセリアルズ株式会社 | 原盤の製造方法 |
| JP2018170333A (ja) * | 2017-03-29 | 2018-11-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP6509976B2 (ja) * | 2017-08-24 | 2019-05-08 | リソテック ジャパン株式会社 | 樹脂製シートおよびチューブ |
| DE102018107615A1 (de) * | 2017-09-06 | 2019-03-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| KR102506441B1 (ko) * | 2017-12-04 | 2023-03-06 | 삼성전자주식회사 | 반도체 발광 어레이의 제조 방법 및 반도체 발광 어레이 |
| KR102244791B1 (ko) * | 2017-12-15 | 2021-04-26 | 주식회사 엘지화학 | 편광판, 편광판-캐리어 필름 적층체, 편광판-캐리어 필름 적층체의 제조방법, 편광판의 제조방법 및 활성 에너지선 경화형 조성물 |
| KR102427640B1 (ko) * | 2017-12-19 | 2022-08-01 | 삼성전자주식회사 | 자외선 반도체 발광소자 |
| TWI709761B (zh) * | 2019-04-15 | 2020-11-11 | 上暘光學股份有限公司 | 具有雷射誘發週期表面微結構之光學鏡片 |
| TWI693726B (zh) * | 2019-08-14 | 2020-05-11 | 錼創顯示科技股份有限公司 | 微型發光元件及微型發光元件結構 |
| US20210296530A1 (en) * | 2020-03-17 | 2021-09-23 | Magna Electronics Inc. | Vehicular display element comprising high density mini-pixel led array |
| CN112250312A (zh) * | 2020-10-20 | 2021-01-22 | 浙江水晶光电科技股份有限公司 | 微结构的生成方法及表面具有微结构的产品 |
| TWI741911B (zh) * | 2020-12-16 | 2021-10-01 | 環球晶圓股份有限公司 | 磊晶層去除方法 |
| CN112687777B (zh) * | 2020-12-18 | 2021-12-03 | 华灿光电(苏州）有限公司 | 发光二极管外延片及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP4201079B2 (ja) * | 2002-12-20 | 2008-12-24 | 昭和電工株式会社 | 発光素子、その製造方法およびｌｅｄランプ |
| JP4248974B2 (ja) * | 2003-09-02 | 2009-04-02 | 日東電工株式会社 | 光源装置および液晶表示装置 |
| JP2005259970A (ja) | 2004-03-11 | 2005-09-22 | Nichia Chem Ind Ltd | 半導体発光素子 |
| JP4843284B2 (ja) * | 2005-09-22 | 2011-12-21 | パナソニック電工株式会社 | 半導体発光素子およびその製造方法 |
| JP4960249B2 (ja) * | 2005-10-04 | 2012-06-27 | 株式会社きもと | 表面凹凸の作製方法 |
| KR100828873B1 (ko) | 2006-04-25 | 2008-05-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2008153634A (ja) * | 2006-11-24 | 2008-07-03 | Sony Corp | 発光ダイオードの製造方法、発光ダイオード、光源セルユニット、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
| US20090015142A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display devices |
| JP2011192880A (ja) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | 半導体発光素子及び液晶表示装置 |
| JP2012033521A (ja) * | 2010-07-28 | 2012-02-16 | Hitachi Cable Ltd | 基板、及び発光素子 |
| JP5185344B2 (ja) * | 2010-09-06 | 2013-04-17 | 株式会社東芝 | 半導体発光素子の製造方法および半導体発光素子 |
-
2013
- 2013-09-25 WO PCT/JP2013/075943 patent/WO2014057808A1/ja active Application Filing
- 2013-09-25 EP EP13846095.1A patent/EP2908353A4/en not_active Withdrawn
- 2013-09-25 RU RU2015117522A patent/RU2015117522A/ru not_active Application Discontinuation
- 2013-09-25 US US14/434,802 patent/US20160056352A1/en not_active Abandoned
- 2013-09-25 KR KR1020157008391A patent/KR20150052205A/ko active IP Right Grant
- 2013-09-25 JP JP2014540798A patent/JP5719090B2/ja active Active
- 2013-09-25 EP EP16157412.4A patent/EP3043392A1/en not_active Withdrawn
- 2013-09-25 CN CN201380053159.3A patent/CN104781941A/zh not_active Withdrawn
- 2013-09-25 BR BR112015008057A patent/BR112015008057A2/pt not_active Application Discontinuation
- 2013-09-27 TW TW104132883A patent/TW201603314A/zh unknown
- 2013-09-27 TW TW102135182A patent/TWI514618B/zh active
-
2014
- 2014-11-21 JP JP2014236821A patent/JP2015092576A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150052205A (ko) | 2015-05-13 |
| US20160056352A1 (en) | 2016-02-25 |
| JPWO2014057808A1 (ja) | 2016-09-05 |
| EP2908353A1 (en) | 2015-08-19 |
| EP3043392A1 (en) | 2016-07-13 |
| RU2015117522A (ru) | 2016-12-10 |
| JP5719090B2 (ja) | 2015-05-13 |
| WO2014057808A1 (ja) | 2014-04-17 |
| EP2908353A4 (en) | 2015-10-28 |
| TW201421736A (zh) | 2014-06-01 |
| CN104781941A (zh) | 2015-07-15 |
| JP2015092576A (ja) | 2015-05-14 |
| TWI514618B (zh) | 2015-12-21 |
| TW201603314A (zh) | 2016-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B10A | Cessation: cessation confirmed |