DE102011055891A8 - Halbleiterlaserdiode - Google Patents

Halbleiterlaserdiode Download PDF

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Publication number
DE102011055891A8
DE102011055891A8 DE102011055891A DE102011055891A DE102011055891A8 DE 102011055891 A8 DE102011055891 A8 DE 102011055891A8 DE 102011055891 A DE102011055891 A DE 102011055891A DE 102011055891 A DE102011055891 A DE 102011055891A DE 102011055891 A8 DE102011055891 A8 DE 102011055891A8
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser diode
diode
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102011055891A
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English (en)
Other versions
DE102011055891A1 (de
DE102011055891B9 (de
DE102011055891B4 (de
Inventor
Christian Lauer
Harald König
Uwe Strauss
Alexander Bachmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102011055891.8A priority Critical patent/DE102011055891B9/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to PCT/EP2012/073004 priority patent/WO2013079346A1/de
Priority to CN201280059153.2A priority patent/CN103975490B/zh
Priority to US14/361,647 priority patent/US9722394B2/en
Priority to JP2014543834A priority patent/JP5894293B2/ja
Publication of DE102011055891A1 publication Critical patent/DE102011055891A1/de
Publication of DE102011055891A8 publication Critical patent/DE102011055891A8/de
Priority to JP2016034281A priority patent/JP6337036B2/ja
Application granted granted Critical
Publication of DE102011055891B4 publication Critical patent/DE102011055891B4/de
Priority to US15/649,437 priority patent/US20170310081A1/en
Publication of DE102011055891B9 publication Critical patent/DE102011055891B9/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102011055891.8A 2011-11-30 2011-11-30 Halbleiterlaserdiode Active DE102011055891B9 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102011055891.8A DE102011055891B9 (de) 2011-11-30 2011-11-30 Halbleiterlaserdiode
CN201280059153.2A CN103975490B (zh) 2011-11-30 2012-11-19 半导体激光二极管
US14/361,647 US9722394B2 (en) 2011-11-30 2012-11-19 Semiconductor laser diode
JP2014543834A JP5894293B2 (ja) 2011-11-30 2012-11-19 半導体レーザダイオード
PCT/EP2012/073004 WO2013079346A1 (de) 2011-11-30 2012-11-19 Halbleiterlaserdiode
JP2016034281A JP6337036B2 (ja) 2011-11-30 2016-02-25 半導体レーザダイオード
US15/649,437 US20170310081A1 (en) 2011-11-30 2017-07-13 Semiconductor Laser Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011055891.8A DE102011055891B9 (de) 2011-11-30 2011-11-30 Halbleiterlaserdiode

Publications (4)

Publication Number Publication Date
DE102011055891A1 DE102011055891A1 (de) 2013-06-27
DE102011055891A8 true DE102011055891A8 (de) 2013-08-29
DE102011055891B4 DE102011055891B4 (de) 2017-07-06
DE102011055891B9 DE102011055891B9 (de) 2017-09-14

Family

ID=47290923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011055891.8A Active DE102011055891B9 (de) 2011-11-30 2011-11-30 Halbleiterlaserdiode

Country Status (5)

Country Link
US (2) US9722394B2 (de)
JP (2) JP5894293B2 (de)
CN (1) CN103975490B (de)
DE (1) DE102011055891B9 (de)
WO (1) WO2013079346A1 (de)

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WO2015063973A1 (ja) * 2013-11-01 2015-05-07 三菱電機株式会社 半導体レーザ光源
DE102013114226B4 (de) * 2013-12-17 2019-03-07 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode, Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiodenanordnung
DE102014000510B4 (de) 2014-01-20 2018-10-25 Jenoptik Laser Gmbh Halbleiterlaser mit anisotroper Wärmeableitung
JP6421928B2 (ja) * 2014-12-24 2018-11-14 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6551678B2 (ja) * 2015-10-29 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102015119226A1 (de) * 2015-11-09 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
JP6998774B2 (ja) * 2016-01-13 2022-02-10 古河電気工業株式会社 半導体レーザ素子、チップオンサブマウント、および半導体レーザモジュール
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017112242B4 (de) 2016-06-20 2019-10-24 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
DE102016113071A1 (de) * 2016-07-15 2018-01-18 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
JP6292361B1 (ja) * 2016-12-14 2018-03-14 三菱電機株式会社 光半導体装置の製造方法
WO2018109857A1 (ja) * 2016-12-14 2018-06-21 三菱電機株式会社 光半導体装置の製造方法
WO2018212195A1 (ja) * 2017-05-15 2018-11-22 日本電信電話株式会社 半導体光素子
DE102017122330B4 (de) * 2017-09-26 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Halbleiterbauelement
CN108133092A (zh) * 2017-12-12 2018-06-08 电子科技大学 一种SysML驱动焊缝热影响区疲劳裂纹评估分析方法
JP7232239B2 (ja) * 2018-02-26 2023-03-02 パナソニックホールディングス株式会社 半導体発光装置
JP2020004783A (ja) * 2018-06-26 2020-01-09 セイコーエプソン株式会社 面発光レーザー、面発光レーザーの製造方法、光信号伝送装置、ロボットおよび原子発振器
DE102018123019A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür
CN112970198A (zh) 2018-10-30 2021-06-15 埃赛力达加拿大有限公司 高速开关电路配置
US11264778B2 (en) 2018-11-01 2022-03-01 Excelitas Canada, Inc. Quad flat no-leads package for side emitting laser diode
KR102490650B1 (ko) * 2019-01-10 2023-01-19 미쓰비시덴키 가부시키가이샤 반도체 레이저 장치
JP7297121B2 (ja) * 2019-01-10 2023-06-23 三菱電機株式会社 半導体レーザ装置
DE102019103909A1 (de) * 2019-02-15 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Laserdiode und Verfahren für deren Herrstellung
JP7014207B2 (ja) * 2019-06-10 2022-02-01 セイコーエプソン株式会社 波長変換素子、光源装置およびプロジェクター
RU198942U1 (ru) * 2020-04-30 2020-08-04 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Лазерный излучатель
DE102021100391A1 (de) 2021-01-12 2022-07-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende halbleiterlaserdiode und verfahren zur herstellung einer kantenemittierenden halbleiterlaserdiode
DE102021114411A1 (de) * 2021-06-03 2022-12-08 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Laserbarren mit verringerter lateraler Fernfelddivergenz
CN113745949B (zh) * 2021-09-05 2024-04-26 光惠（上海）激光科技有限公司 一种风冷光纤激光器
CN117954957A (zh) * 2024-03-25 2024-04-30 度亘核芯光电技术(苏州)有限公司 一种散热装置及半导体激光器

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US20020037021A1 (en) 2000-08-09 2002-03-28 Michio Ohkubo Semiconductor laser diode
JP2009158644A (ja) 2007-12-26 2009-07-16 Sony Corp レーザモジュール

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Also Published As

Publication number Publication date
CN103975490B (zh) 2017-03-08
US20170310081A1 (en) 2017-10-26
JP2015502051A (ja) 2015-01-19
DE102011055891A1 (de) 2013-06-27
US9722394B2 (en) 2017-08-01
US20140334508A1 (en) 2014-11-13
JP2016129244A (ja) 2016-07-14
DE102011055891B9 (de) 2017-09-14
CN103975490A (zh) 2014-08-06
JP5894293B2 (ja) 2016-03-23
DE102011055891B4 (de) 2017-07-06
WO2013079346A1 (de) 2013-06-06
JP6337036B2 (ja) 2018-06-06

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