DE102011075103A8 - Photodetektor - Google Patents

Photodetektor Download PDF

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Publication number
DE102011075103A8
DE102011075103A8 DE102011075103A DE102011075103A DE102011075103A8 DE 102011075103 A8 DE102011075103 A8 DE 102011075103A8 DE 102011075103 A DE102011075103 A DE 102011075103A DE 102011075103 A DE102011075103 A DE 102011075103A DE 102011075103 A8 DE102011075103 A8 DE 102011075103A8
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DE
Germany
Prior art keywords
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102011075103A
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English (en)
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DE102011075103B4 (de
DE102011075103A1 (de
Inventor
Markus Weyers
Dr. Knigge Andrea
Hans-Joachim Würfl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungsverbund Berlin FVB eV
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Forschungsverbund Berlin FVB eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Forschungsverbund Berlin FVB eV filed Critical Forschungsverbund Berlin FVB eV
Priority to DE102011075103.3A priority Critical patent/DE102011075103B4/de
Priority to US14/115,453 priority patent/US9431557B2/en
Priority to EP12723394.8A priority patent/EP2705541A2/de
Priority to PCT/EP2012/057665 priority patent/WO2012150177A2/de
Publication of DE102011075103A1 publication Critical patent/DE102011075103A1/de
Publication of DE102011075103A8 publication Critical patent/DE102011075103A8/de
Application granted granted Critical
Publication of DE102011075103B4 publication Critical patent/DE102011075103B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE102011075103.3A 2011-05-02 2011-05-02 Photodetektor Expired - Fee Related DE102011075103B4 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102011075103.3A DE102011075103B4 (de) 2011-05-02 2011-05-02 Photodetektor
US14/115,453 US9431557B2 (en) 2011-05-02 2012-04-26 Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current
EP12723394.8A EP2705541A2 (de) 2011-05-02 2012-04-26 Photodetektor für ultraviolette strahlung mit hoher empfindlichkeit und geringem dunkelstrom
PCT/EP2012/057665 WO2012150177A2 (de) 2011-05-02 2012-04-26 Photodetektor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011075103.3A DE102011075103B4 (de) 2011-05-02 2011-05-02 Photodetektor

Publications (3)

Publication Number Publication Date
DE102011075103A1 DE102011075103A1 (de) 2012-11-08
DE102011075103A8 true DE102011075103A8 (de) 2013-01-31
DE102011075103B4 DE102011075103B4 (de) 2014-04-10

Family

ID=46149396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011075103.3A Expired - Fee Related DE102011075103B4 (de) 2011-05-02 2011-05-02 Photodetektor

Country Status (4)

Country Link
US (1) US9431557B2 (de)
EP (1) EP2705541A2 (de)
DE (1) DE102011075103B4 (de)
WO (1) WO2012150177A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943720A (zh) * 2014-03-27 2014-07-23 中国科学院长春光学精密机械与物理研究所 一种自驱动式氧锌镁紫外探测器及其制备方法
DE102014225632B3 (de) * 2014-12-11 2016-03-31 Forschungsverbund Berlin E.V. Photodetektor und Vorrichtung zur Desinfektion von Wasser diesen umfassend
DE102014018722B3 (de) * 2014-12-16 2016-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren, SiC-Halbleiterdetektor und dessen Verwendung und Detektoranordnung diesen aufweisend zur Detektion von Sonnenlicht
CN104576789B (zh) * 2014-12-30 2016-08-24 吉林大学 氧化石墨烯作为阻挡层及隧穿层的探测器及其制备方法
US10126165B2 (en) * 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
JP6614486B2 (ja) * 2015-11-05 2019-12-04 旭化成株式会社 紫外線受光素子
JP6876290B2 (ja) * 2016-09-27 2021-05-26 旭化成株式会社 受光素子
US20190165032A1 (en) * 2017-11-30 2019-05-30 James G. Fiorenza Gallium nitride photodetector with substantially transparent electrodes
KR101946205B1 (ko) * 2018-07-16 2019-04-17 아주대학교산학협력단 태양광-블라인드 uv-c 광센서 및 이의 제조 방법
US11309450B2 (en) 2018-12-20 2022-04-19 Analog Devices, Inc. Hybrid semiconductor photodetector assembly
CN109659398B (zh) * 2018-12-26 2020-05-12 中南大学 一种AlGaN基背入式MSM紫外焦平面阵列成像系统的制备方法
US11302835B2 (en) * 2019-01-08 2022-04-12 Analog Devices, Inc. Semiconductor photodetector assembly
CN112201704B (zh) * 2019-06-19 2022-12-06 中国科学院物理研究所 抗干扰高灵敏度紫外光探测器
CN111739960B (zh) * 2020-05-14 2022-07-26 中山大学 一种增益型异质结紫外光电探测器
CN112289883B (zh) * 2020-10-30 2023-03-28 华中科技大学 一种三维半导体雪崩光电探测芯片及其制备方法

Citations (4)

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DE19615495A1 (de) * 1996-04-19 1997-10-23 Forschungszentrum Juelich Gmbh Halbleiter-Bauelement und Verfahren zu dessen Herstellung
US20060289761A1 (en) * 2004-12-15 2006-12-28 Bahram Nabet Nanowire based plasmonics
EP2023403A1 (de) * 2006-05-24 2009-02-11 Meijo University Ultraviolett-photosensor
US7705415B1 (en) * 2004-08-12 2010-04-27 Drexel University Optical and electronic devices based on nano-plasma

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GB2310756B (en) * 1996-02-29 1998-01-21 Toshiba Cambridge Res Center Radiation detector
JP2000183373A (ja) * 1998-12-11 2000-06-30 Mitsubishi Cable Ind Ltd 光導電素子
US7288803B2 (en) * 2004-10-01 2007-10-30 International Rectifier Corporation III-nitride power semiconductor device with a current sense electrode
US7973304B2 (en) * 2007-02-06 2011-07-05 International Rectifier Corporation III-nitride semiconductor device
US7723206B2 (en) * 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19615495A1 (de) * 1996-04-19 1997-10-23 Forschungszentrum Juelich Gmbh Halbleiter-Bauelement und Verfahren zu dessen Herstellung
US7705415B1 (en) * 2004-08-12 2010-04-27 Drexel University Optical and electronic devices based on nano-plasma
US20060289761A1 (en) * 2004-12-15 2006-12-28 Bahram Nabet Nanowire based plasmonics
EP2023403A1 (de) * 2006-05-24 2009-02-11 Meijo University Ultraviolett-photosensor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Jiang, H.; Egawa, T.; Ishikawa, H.; Shao, C; Jimbo, T.: Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure. In: Japanese Journal of Applied Physics, 2004, Vol. 43, No. 5B, L683-685 - ISSN 0021-4922 *
Jiang, H.; Egawa, T.; Ishikawa, H.; Shao, C; Jimbo, T.: Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure. In: Japanese Journal of Applied Physics, 2004, Vol. 43, No. 5B, L683-685 – ISSN 0021-4922
Nabet, B.: A Heterojunction Metal-Semiconductor-Metal Photodetctor. In: IEEE Photonics Technology Letters, 1997, Vol. 9, No. 2, S. 223-225 - ISSN 1041-1135 *
Nabet, B.: A Heterojunction Metal-Semiconductor-Metal Photodetctor. In: IEEE Photonics Technology Letters, 1997, Vol. 9, No. 2, S. 223-225 – ISSN 1041-1135

Also Published As

Publication number Publication date
US9431557B2 (en) 2016-08-30
DE102011075103B4 (de) 2014-04-10
US20140070272A1 (en) 2014-03-13
WO2012150177A3 (de) 2013-05-30
WO2012150177A2 (de) 2012-11-08
EP2705541A2 (de) 2014-03-12
DE102011075103A1 (de) 2012-11-08

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