JP6337036B2 - 半導体レーザダイオード - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Description
本特許出願は、独国特許出願第102011055891.8号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (12)
- 半導体レーザダイオードであって、
垂直方向に上下に重ねて形成されている半導体層(21,22,23,25,26)を有する半導体積層体(2)であって、動作時に放射取り出し面(11)を介してレーザ放射を放出する、30μm以上の幅を有する活性領域(24)を備えている活性層(23)を有し、前記放射取り出し面(11)が、前記半導体積層体(2)の側面によって形成されており、対向する裏面(12)とともに、横方向の利得導波を有する縦方向における共振器を形成する、半導体積層体(2)と、
半導体カバー層(25)によって形成されている前記半導体積層体(2)の上面(20)に、少なくとも部分領域において直接接触しているメタライゼーション層(3)と、
少なくとも前記メタライゼーション層(3)を備え、前記半導体積層体(2)の前記上面(20)の上に構造化された放熱層(4)と、
を備えており、
前記半導体積層体(2)が、動作に起因して熱影響領域(29)において加熱され、
前記メタライゼーション層(3)が、累積幅(B1)を有し、
前記熱影響領域(29)の幅(B2)に対する前記累積幅(B1)の比が、前記放射取り出し面(11)までの距離に依存して変化し、
前記構造化された放熱層(4)によって、縦方向もしくは横方向またはその両方向に変化する前記活性領域(24)からの放熱が可能であり、
前記メタライゼーション層(3)の上には、内部ヒートシンク(7)が直接接触した状態で形成されており、
前記構造化された放熱層(4)は、前記内部ヒートシンク(7)を備えており、
前記内部ヒートシンク(7)は、少なくとも横方向もしくは縦方向またはその両方向における構造化部を有し、
前記内部ヒートシンク(7)の前記構造化部は、異なる熱伝導率を有する材料(71,72)によって形成されている、
半導体レーザダイオード。 - 前記熱影響領域(29)の前記幅(B2)に対する前記累積幅(B1)の比は、前記放射取り出し面(11)までの距離が増大するにつれて減少する、
請求項1に記載の半導体レーザダイオード。 - 前記メタライゼーション層(3)の前記累積幅(B1)は、前記放射取り出し面(11)までの距離が増大するにつれて減少する、
請求項1または請求項2に記載の半導体レーザダイオード。 - 前記メタライゼーション層(3)は、前記放射取り出し面(11)の近くにおいて、前記熱影響領域(29)よりも幅が広い、
請求項1から請求項3のいずれかに記載の半導体レーザダイオード。 - 前記メタライゼーション層(3)は、前記裏面(12)の近くにおいて、前記熱影響領域(29)よりも幅が狭い、
請求項1から請求項4のいずれかに記載の半導体レーザダイオード。 - 前記メタライゼーション層(3)は、開口部(31)を有し、
前記開口部(31)の大きさ、数、密度から選択される少なくとも1つまたはいくつかの特性は、前記放射取り出し面(11)までの距離が増大するにつれて大きくなる、
請求項1から請求項5のいずれかに記載の半導体レーザダイオード。 - 前記開口部(31)の中に材料(32)が配置されており、
前記材料(32)は、前記メタライゼーション層(3)よりも低い熱伝導率もしくは低いはんだ付け性またはその両方を有する、
請求項6に記載の半導体レーザダイオード。 - 前記メタライゼーション層(3)は、横方向における縁部を有し、
前記縁部は、島状(30)に構造化されている、
請求項2から請求項7のいずれかに記載の半導体レーザダイオード。 - 前記半導体積層体(2)は、前記構造化された放熱層(4)と前記活性領域(24)との間に、前記活性領域(24)に電流を供給する半導体層(26)を有し、
前記半導体層(26)は、前記放射取り出し面(11)までの距離が大きくなるにつれて少なくとも部分的に増大する幅を有する、
請求項1から請求項8のいずれかに記載の半導体レーザダイオード。 - 前記半導体層(26)は、構造化され、電流を供給する前記半導体カバー層(25)である、
請求項1から請求項9のいずれかに記載の半導体レーザダイオード。 - 前記半導体カバー層(25)と前記活性層(23)との間の少なくとも1層の半導体層(27)は、横方向において構造化された縁部を有する、
請求項1から請求項10のいずれかに記載の半導体レーザダイオード。 - 前記内部ヒートシンク(7)は、前記半導体積層体(2)とは反対側のはんだ面を有し、前記はんだ面を介して前記半導体レーザダイオードをはんだ層(5)によって外部キャリア(6)の上に実装することができる、
請求項1から請求項11のいずれかに記載の半導体レーザダイオード。
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DE102011055891.8A DE102011055891B9 (de) | 2011-11-30 | 2011-11-30 | Halbleiterlaserdiode |
DE102011055891.8 | 2011-11-30 |
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US (2) | US9722394B2 (ja) |
JP (2) | JP5894293B2 (ja) |
CN (1) | CN103975490B (ja) |
DE (1) | DE102011055891B9 (ja) |
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JP6156510B2 (ja) * | 2013-11-01 | 2017-07-05 | 三菱電機株式会社 | 半導体レーザ光源 |
DE102013114226B4 (de) * | 2013-12-17 | 2019-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode, Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiodenanordnung |
DE102014000510B4 (de) | 2014-01-20 | 2018-10-25 | Jenoptik Laser Gmbh | Halbleiterlaser mit anisotroper Wärmeableitung |
JP6421928B2 (ja) * | 2014-12-24 | 2018-11-14 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP6551678B2 (ja) * | 2015-10-29 | 2019-07-31 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
DE102015119226A1 (de) * | 2015-11-09 | 2017-05-11 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode |
WO2017122782A1 (ja) | 2016-01-13 | 2017-07-20 | 古河電気工業株式会社 | 半導体レーザ素子、チップオンサブマウント、および半導体レーザモジュール |
DE102016110790B4 (de) | 2016-06-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
DE102017112242B4 (de) | 2016-06-20 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser |
DE102016113071A1 (de) * | 2016-07-15 | 2018-01-18 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode |
JPWO2018109857A1 (ja) * | 2016-12-14 | 2018-12-13 | 三菱電機株式会社 | 光半導体装置の製造方法 |
JP6292361B1 (ja) * | 2016-12-14 | 2018-03-14 | 三菱電機株式会社 | 光半導体装置の製造方法 |
JP6738488B2 (ja) * | 2017-05-15 | 2020-08-12 | 日本電信電話株式会社 | 半導体光素子 |
DE102017122330B4 (de) * | 2017-09-26 | 2023-04-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode und Halbleiterbauelement |
CN108133092A (zh) * | 2017-12-12 | 2018-06-08 | 电子科技大学 | 一种SysML驱动焊缝热影响区疲劳裂纹评估分析方法 |
JP7232239B2 (ja) * | 2018-02-26 | 2023-03-02 | パナソニックホールディングス株式会社 | 半導体発光装置 |
JP2020004783A (ja) * | 2018-06-26 | 2020-01-09 | セイコーエプソン株式会社 | 面発光レーザー、面発光レーザーの製造方法、光信号伝送装置、ロボットおよび原子発振器 |
DE102018123019A1 (de) * | 2018-09-19 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür |
WO2020092290A1 (en) | 2018-10-30 | 2020-05-07 | Exceutas Canada, Inc. | Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition |
US11264778B2 (en) | 2018-11-01 | 2022-03-01 | Excelitas Canada, Inc. | Quad flat no-leads package for side emitting laser diode |
JP7297121B2 (ja) * | 2019-01-10 | 2023-06-23 | 三菱電機株式会社 | 半導体レーザ装置 |
DE112019006646B4 (de) | 2019-01-10 | 2024-04-18 | Mitsubishi Electric Corporation | Halbleiter-Laservorrichtung |
DE102019103909A1 (de) * | 2019-02-15 | 2020-08-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Kantenemittierende Laserdiode und Verfahren für deren Herrstellung |
JP7014207B2 (ja) * | 2019-06-10 | 2022-02-01 | セイコーエプソン株式会社 | 波長変換素子、光源装置およびプロジェクター |
RU198942U1 (ru) * | 2020-04-30 | 2020-08-04 | Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ | Лазерный излучатель |
DE102021100391A1 (de) | 2021-01-12 | 2022-07-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Kantenemittierende halbleiterlaserdiode und verfahren zur herstellung einer kantenemittierenden halbleiterlaserdiode |
DE102021114411A1 (de) * | 2021-06-03 | 2022-12-08 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Laserbarren mit verringerter lateraler Fernfelddivergenz |
CN113745949B (zh) * | 2021-09-05 | 2024-04-26 | 光惠(上海)激光科技有限公司 | 一种风冷光纤激光器 |
CN117954957B (zh) * | 2024-03-25 | 2024-07-09 | 度亘核芯光电技术(苏州)有限公司 | 一种散热装置及半导体激光器 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07131117A (ja) | 1993-09-07 | 1995-05-19 | Mitsubishi Electric Corp | 半導体レーザ素子およびその製造方法 |
JP3037111B2 (ja) | 1995-07-13 | 2000-04-24 | 日本電気株式会社 | 半導体レーザおよび複合半導体レーザ |
JP3461632B2 (ja) | 1995-08-28 | 2003-10-27 | 三菱電機株式会社 | 半導体レーザ装置 |
US6181721B1 (en) | 1996-05-20 | 2001-01-30 | Sdl, Inc. | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam |
JPH09321379A (ja) * | 1996-05-29 | 1997-12-12 | Shimadzu Corp | 半導体レーザ |
US6185238B1 (en) * | 1997-02-21 | 2001-02-06 | Kabushiki Kaisha Toshiba | Nitride compound semiconductor laser and its manufacturing method |
WO1998038710A1 (de) * | 1997-02-27 | 1998-09-03 | Deutsche Telekom Ag | Optoelektronisches bauelement |
DE19717545A1 (de) * | 1997-02-27 | 1998-09-03 | Deutsche Telekom Ag | Optoelektronisches Bauelement mit räumlich einstellbarer Temperaturverteilung |
JP3339369B2 (ja) | 1997-05-30 | 2002-10-28 | 株式会社デンソー | レーザダイオード |
AU4286499A (en) | 1998-06-18 | 2000-01-05 | University College Cork | A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device |
JP2002124733A (ja) | 2000-08-09 | 2002-04-26 | Furukawa Electric Co Ltd:The | 半導体レーザダイオード |
DE602004024451D1 (de) * | 2003-12-22 | 2010-01-14 | Panasonic Corp | Halbleiterlaser-bauelement und laserprojektor |
JP4599836B2 (ja) * | 2003-12-22 | 2010-12-15 | ソニー株式会社 | 半導体レーザ素子 |
JP2005197596A (ja) * | 2004-01-09 | 2005-07-21 | Toyoda Gosei Co Ltd | 半導体発光素子 |
DE102004036963A1 (de) | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung |
JP4656398B2 (ja) | 2005-04-07 | 2011-03-23 | ソニー株式会社 | ブロードエリア型半導体レーザ素子 |
JP4927571B2 (ja) | 2006-01-17 | 2012-05-09 | 古河電気工業株式会社 | 半導体素子、半導体モジュールおよび電子機器 |
JP2007266575A (ja) | 2006-02-28 | 2007-10-11 | Sanyo Electric Co Ltd | 半導体レーザ素子及び半導体レーザ装置 |
US20080008217A1 (en) * | 2006-07-07 | 2008-01-10 | Newport Corporation | Laser device including heat sink with a tailored coefficient of thermal expansion |
DE102008013896A1 (de) | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Laserlichtquelle |
JP2009158644A (ja) | 2007-12-26 | 2009-07-16 | Sony Corp | レーザモジュール |
DE102008014093B4 (de) | 2007-12-27 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere |
DE102008014092A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen |
JP2009295680A (ja) | 2008-06-03 | 2009-12-17 | Panasonic Corp | 半導体レーザ装置 |
JP2010114202A (ja) * | 2008-11-05 | 2010-05-20 | Sony Corp | 半導体レーザ素子 |
DE102008058436B4 (de) | 2008-11-21 | 2019-03-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip |
JP2011023670A (ja) | 2009-07-17 | 2011-02-03 | Thermo Graphitics Co Ltd | 異方性熱伝導素子及びその製造方法 |
JP2011222675A (ja) * | 2010-04-07 | 2011-11-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US8233513B1 (en) * | 2011-03-09 | 2012-07-31 | Coherent, Inc. | Broad-area edge-emitting semiconductor laser with limited thermal contact |
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US20140334508A1 (en) | 2014-11-13 |
US9722394B2 (en) | 2017-08-01 |
JP2015502051A (ja) | 2015-01-19 |
US20170310081A1 (en) | 2017-10-26 |
DE102011055891A8 (de) | 2013-08-29 |
CN103975490A (zh) | 2014-08-06 |
WO2013079346A1 (de) | 2013-06-06 |
DE102011055891B9 (de) | 2017-09-14 |
JP5894293B2 (ja) | 2016-03-23 |
DE102011055891B4 (de) | 2017-07-06 |
CN103975490B (zh) | 2017-03-08 |
DE102011055891A1 (de) | 2013-06-27 |
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