AU4286499A - A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device - Google Patents

A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device

Info

Publication number
AU4286499A
AU4286499A AU42864/99A AU4286499A AU4286499A AU 4286499 A AU4286499 A AU 4286499A AU 42864/99 A AU42864/99 A AU 42864/99A AU 4286499 A AU4286499 A AU 4286499A AU 4286499 A AU4286499 A AU 4286499A
Authority
AU
Australia
Prior art keywords
semi
conductor device
junction
current density
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU42864/99A
Inventor
John Gerard Mcinerney
Peter Matths Wippel Skovgaard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University College Cork
Original Assignee
University College Cork
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University College Cork filed Critical University College Cork
Publication of AU4286499A publication Critical patent/AU4286499A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
AU42864/99A 1998-06-18 1999-06-18 A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device Abandoned AU4286499A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IE980488 1998-06-18
IE980488 1998-06-18
PCT/IE1999/000053 WO1999066614A1 (en) 1998-06-18 1999-06-18 A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device

Publications (1)

Publication Number Publication Date
AU4286499A true AU4286499A (en) 2000-01-05

Family

ID=11041823

Family Applications (1)

Application Number Title Priority Date Filing Date
AU42864/99A Abandoned AU4286499A (en) 1998-06-18 1999-06-18 A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device

Country Status (3)

Country Link
AU (1) AU4286499A (en)
IE (1) IES990510A2 (en)
WO (1) WO1999066614A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0018576D0 (en) * 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser
US7269195B2 (en) 2002-03-04 2007-09-11 Quintessence Photonics Corporation Laser diode with an amplification section that has a varying index of refraction
DE102008014092A1 (en) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser chip with a structured contact strip
DE102008014093B4 (en) 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser chip with at least one current barrier
DE102011055891B9 (en) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Semiconductor laser diode
JP2015012018A (en) * 2013-06-26 2015-01-19 シャープ株式会社 Semiconductor laser element
DE102015203113B4 (en) 2015-02-20 2023-12-28 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Laser diode with improved electrical conduction properties
WO2019146321A1 (en) * 2018-01-29 2019-08-01 パナソニック株式会社 Semiconductor laser element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6396988A (en) * 1986-10-14 1988-04-27 Sony Corp Semiconductor laser
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier

Also Published As

Publication number Publication date
IES990510A2 (en) 2001-01-10
WO1999066614A1 (en) 1999-12-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase