BR112014024516A2 - substrato óptico, elemento emissor de luz semicondutor, e, método de fabricação de um elemento emissor de luz semicondutor. - Google Patents

substrato óptico, elemento emissor de luz semicondutor, e, método de fabricação de um elemento emissor de luz semicondutor.

Info

Publication number
BR112014024516A2
BR112014024516A2 BR112014024516A BR112014024516A BR112014024516A2 BR 112014024516 A2 BR112014024516 A2 BR 112014024516A2 BR 112014024516 A BR112014024516 A BR 112014024516A BR 112014024516 A BR112014024516 A BR 112014024516A BR 112014024516 A2 BR112014024516 A2 BR 112014024516A2
Authority
BR
Brazil
Prior art keywords
emitting element
semiconductor light
manufacturing
optical substrate
semiconductor
Prior art date
Application number
BR112014024516A
Other languages
English (en)
Inventor
Jun Koike
Yoshimichi Mitamura
Fujito Yamaguchi
Original Assignee
Asahi Kasei E Mat Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Mat Corporation filed Critical Asahi Kasei E Mat Corporation
Publication of BR112014024516A2 publication Critical patent/BR112014024516A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
BR112014024516A 2012-04-02 2013-03-29 substrato óptico, elemento emissor de luz semicondutor, e, método de fabricação de um elemento emissor de luz semicondutor. BR112014024516A2 (pt)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2012084208 2012-04-02
JP2012103489 2012-04-27
JP2012103490 2012-04-27
JP2012227295 2012-10-12
JP2012267377 2012-12-06
JP2012267488 2012-12-06
JP2012280241 2012-12-21
PCT/JP2013/059635 WO2013150984A1 (ja) 2012-04-02 2013-03-29 光学基板、半導体発光素子及び半導体発光素子の製造方法

Publications (1)

Publication Number Publication Date
BR112014024516A2 true BR112014024516A2 (pt) 2017-07-25

Family

ID=49300468

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014024516A BR112014024516A2 (pt) 2012-04-02 2013-03-29 substrato óptico, elemento emissor de luz semicondutor, e, método de fabricação de um elemento emissor de luz semicondutor.

Country Status (10)

Country Link
US (1) US9614136B2 (pt)
EP (5) EP2942820A1 (pt)
JP (1) JP6235459B2 (pt)
KR (2) KR101763460B1 (pt)
CN (1) CN104205370B (pt)
BR (1) BR112014024516A2 (pt)
IN (1) IN2014MN01916A (pt)
RU (1) RU2604568C2 (pt)
TW (1) TWI531086B (pt)
WO (1) WO2013150984A1 (pt)

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Also Published As

Publication number Publication date
TW201344959A (zh) 2013-11-01
KR101862500B1 (ko) 2018-05-29
KR20140133867A (ko) 2014-11-20
EP2942820A1 (en) 2015-11-11
EP2942821A1 (en) 2015-11-11
EP2835836B1 (en) 2019-06-19
KR20160148052A (ko) 2016-12-23
TWI531086B (zh) 2016-04-21
JP6235459B2 (ja) 2017-11-22
CN104205370A (zh) 2014-12-10
WO2013150984A1 (ja) 2013-10-10
US20150048380A1 (en) 2015-02-19
EP2942819A1 (en) 2015-11-11
RU2014144362A (ru) 2016-05-27
RU2604568C2 (ru) 2016-12-10
EP2835836A4 (en) 2015-08-05
JPWO2013150984A1 (ja) 2015-12-17
CN104205370B (zh) 2017-03-22
EP2835836A1 (en) 2015-02-11
US9614136B2 (en) 2017-04-04
KR101763460B1 (ko) 2017-07-31
IN2014MN01916A (pt) 2015-07-10
EP2942822A1 (en) 2015-11-11

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