IN2014MN01916A - - Google Patents

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Publication number
IN2014MN01916A
IN2014MN01916A IN1916MUN2014A IN2014MN01916A IN 2014MN01916 A IN2014MN01916 A IN 2014MN01916A IN 1916MUN2014 A IN1916MUN2014 A IN 1916MUN2014A IN 2014MN01916 A IN2014MN01916 A IN 2014MN01916A
Authority
IN
India
Prior art keywords
convex
parts
convex parts
pave
emitting element
Prior art date
Application number
Inventor
Jun Koike
Yoshimichi Mitamura
Fujito Yamaguchi
Original Assignee
Asahi Kasei E Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Materials Corp filed Critical Asahi Kasei E Materials Corp
Publication of IN2014MN01916A publication Critical patent/IN2014MN01916A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Abstract

A concavo convex structure (12) containing multiple independent convex parts (131 to 134) and concave parts (14) disposed between each convex part (131 to 134) is disposed on the surface of an optical substrate (1). The average space (Pave) between the adjacent convex parts (131 to 134) of the concavo convex structure (12) is within the range of 50 nm=Pave=1500 nm and convex parts (133) having a height (hn) within the range of 0.6 h=hn=0 h relative to the average height (Have) of the convex parts are present at a probability (Z) of 1/10000=Z=1/5. When the optical substrate (1) is used in a semiconductor light emitting element the light extraction efficiency (LEE) is increased by eliminating the waveguide mode by means of light scattering while improving the internal quantum efficiency (IQE) by dispersing the dislocation within a semiconductor layer and by reducing the dislocation density and the light emission efficiency of the semiconductor light emitting element is improved.
IN1916MUN2014 2012-04-02 2013-03-29 IN2014MN01916A (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2012084208 2012-04-02
JP2012103489 2012-04-27
JP2012103490 2012-04-27
JP2012227295 2012-10-12
JP2012267488 2012-12-06
JP2012267377 2012-12-06
JP2012280241 2012-12-21
PCT/JP2013/059635 WO2013150984A1 (en) 2012-04-02 2013-03-29 Optical substrate, semiconductor light-emitting element, and method for producing semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
IN2014MN01916A true IN2014MN01916A (en) 2015-07-10

Family

ID=49300468

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1916MUN2014 IN2014MN01916A (en) 2012-04-02 2013-03-29

Country Status (10)

Country Link
US (1) US9614136B2 (en)
EP (5) EP2942819A1 (en)
JP (1) JP6235459B2 (en)
KR (2) KR101763460B1 (en)
CN (1) CN104205370B (en)
BR (1) BR112014024516A2 (en)
IN (1) IN2014MN01916A (en)
RU (1) RU2604568C2 (en)
TW (1) TWI531086B (en)
WO (1) WO2013150984A1 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495158B (en) * 2011-08-31 2015-08-01 Asahi Kasei E Materials Corp An optical substrate, a semiconductor light-emitting element, an embossing mold, and an exposure apparatus
KR101763460B1 (en) * 2012-04-02 2017-07-31 아사히 가세이 가부시키가이샤 Optical substrate, semiconductor light-emitting element, and method for producing semiconductor light-emitting element
KR101421026B1 (en) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 Light extraction layer substrate for oled and method of fabricating thereof
CN108389944B (en) * 2012-08-21 2021-04-02 王子控股株式会社 Substrate for semiconductor light emitting element and semiconductor light emitting element
DE102013108876B4 (en) * 2013-08-16 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Photolithographic process for producing a structure in a radiation-emitting semiconductor component
CN104459852B (en) * 2013-09-22 2017-02-01 清华大学 Preparation method of metal grating
CN104459855A (en) * 2013-09-22 2015-03-25 清华大学 Preparation method of metal grating
CN104459854B (en) * 2013-09-22 2017-12-01 清华大学 The preparation method of metal grating
TWI632696B (en) * 2013-10-11 2018-08-11 王子控股股份有限公司 Method for producing substrate for semiconductor light emitting elements, method for manufacturing semiconductor light emitting element, ?substrate for semiconductor light emitting elements, and semiconductor light emitting element
TWI597863B (en) * 2013-10-22 2017-09-01 晶元光電股份有限公司 Light-emitting device and manufacturing method thereof
JP2015120879A (en) * 2013-11-20 2015-07-02 旭化成イーマテリアルズ株式会社 Resist composition
KR102099441B1 (en) * 2013-12-19 2020-04-09 엘지이노텍 주식회사 Light emittng device
KR101894342B1 (en) * 2013-12-27 2018-09-03 제이엑스티지 에네루기 가부시키가이샤 Light-emitting element
JP6295276B2 (en) * 2014-01-10 2018-03-14 Ｊｘｔｇエネルギー株式会社 Optical substrate, mold used for manufacturing optical substrate, and light emitting device including optical substrate
US9618836B2 (en) * 2014-04-22 2017-04-11 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production
JP6438678B2 (en) * 2014-05-14 2018-12-19 Ｊｘｔｇエネルギー株式会社 Film member having an uneven structure
CN106662673B (en) * 2014-07-10 2018-11-30 Scivax股份有限公司 Optical component and its manufacturing method
TWI556002B (en) * 2014-08-05 2016-11-01 群創光電股份有限公司 Anti-reflection structure and electronic device
CN105449058A (en) * 2014-09-02 2016-03-30 展晶科技(深圳)有限公司 Epitaxial substrate, method of manufacturing epitaxial substrate and light emitting diode
TWI605616B (en) * 2015-08-12 2017-11-11 固美實國際股份有限公司 Patterned substrate for light emitting diode
KR102412409B1 (en) * 2015-10-26 2022-06-23 엘지전자 주식회사 Display device using semiconductor light emitting device and method for manufacturing the same
JP6229707B2 (en) 2015-11-26 2017-11-15 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
TWI635639B (en) * 2017-01-05 2018-09-11 機光科技股份有限公司 High refraction and high thermal conductivity OLED element
US10243099B2 (en) 2017-05-16 2019-03-26 Epistar Corporation Light-emitting device
KR102343099B1 (en) * 2017-06-07 2021-12-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device
CN109427940B (en) * 2017-08-22 2020-04-24 比亚迪股份有限公司 Light emitting diode epitaxial wafer and manufacturing method thereof
DE102018116783A1 (en) 2017-09-29 2019-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor substrate and method of manufacturing this
KR102456458B1 (en) 2017-12-27 2022-10-18 엘지디스플레이 주식회사 Electroluminescent Display Device
US11181668B2 (en) * 2018-07-13 2021-11-23 University Of Notre Dame Du Lac High contrast gradient index lens antennas
EP3918390A4 (en) * 2019-01-28 2022-10-05 B.G. Negev Technologies and Applications Ltd., at Ben-Gurion University Structure for a waveguide facet
US11249206B2 (en) * 2020-01-06 2022-02-15 Canon Medical Systems Corporation Method and system for PET detector efficiency normalization
CN111785836B (en) * 2020-06-27 2022-12-16 上海师范大学 Solar cell with hole transport layer with moth eye structure and preparation method thereof
RU202751U1 (en) * 2020-08-11 2021-03-04 Постовой Денис Александрович Diode assembly
DE102020215937A1 (en) 2020-12-15 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung METHOD OF PREPARING A SUBSTRATE WITH A STRUCTURED SURFACE AND SUBSTRATE WITH A STRUCTURED SURFACE

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4055503B2 (en) 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light emitting device
JP4178836B2 (en) 2002-05-29 2008-11-12 ソニー株式会社 Gallium nitride semiconductor device and manufacturing method thereof
KR100576854B1 (en) * 2003-12-20 2006-05-10 삼성전기주식회사 Fabrication method for nitride semiconductor and nitride semiconductor fabricated thereby
US7449215B2 (en) * 2004-03-05 2008-11-11 Toshiba Matsushita Display Technology Co., Ltd. Method of manufacturing display device
JP2005259970A (en) 2004-03-11 2005-09-22 Nichia Chem Ind Ltd Semiconductor light emitting element
JP2005354020A (en) * 2004-05-10 2005-12-22 Univ Meijo Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device
WO2006025277A1 (en) 2004-08-31 2006-03-09 Meijo University Production method for semiconductor light emittingt element and semiconductor light emitting element
KR100610639B1 (en) * 2005-07-22 2006-08-09 삼성전기주식회사 Vertically structured gan type led device and method of manufacturing the same
JP4843284B2 (en) * 2005-09-22 2011-12-21 パナソニック電工株式会社 Semiconductor light emitting device and manufacturing method thereof
KR100659373B1 (en) 2006-02-09 2006-12-19 서울옵토디바이스주식회사 Patterned substrate for light emitting diode and light emitting diode employing the same
JP5232969B2 (en) * 2006-03-23 2013-07-10 豊田合成株式会社 Method for manufacturing gallium nitride compound semiconductor light emitting device
KR100828873B1 (en) 2006-04-25 2008-05-09 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof
KR100736623B1 (en) * 2006-05-08 2007-07-09 엘지전자 주식회사 Led having vertical structure and method for making the same
KR100780233B1 (en) 2006-05-15 2007-11-27 삼성전기주식회사 Light emitting device with multi-pattern
KR100769727B1 (en) 2006-08-17 2007-10-23 삼성전기주식회사 Forming method for surface unevenness and manufacturing method for gan type led device using thereof
US7977695B2 (en) * 2007-09-21 2011-07-12 Lg Innotek Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
JP4993371B2 (en) 2007-11-21 2012-08-08 サンケン電気株式会社 Wafer surface roughening method for semiconductor light emitting device and semiconductor light emitting device
US7598105B2 (en) 2007-12-21 2009-10-06 Tekcore Co., Ltd. Light emitting diode structure and method for fabricating the same
US8552445B2 (en) * 2007-12-28 2013-10-08 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
JP5042100B2 (en) * 2008-03-28 2012-10-03 Ｄｏｗａエレクトロニクス株式会社 Epitaxial growth substrate, method of manufacturing the same, and group III nitride semiconductor device
JP5282503B2 (en) * 2008-09-19 2013-09-04 日亜化学工業株式会社 Semiconductor light emitting device
JP5343225B2 (en) 2008-12-16 2013-11-13 スタンレー電気株式会社 Epitaxial wafer for II-VI group or III-V group compound semiconductor light emitting device, and manufacturing method thereof
TW201029073A (en) 2009-01-21 2010-08-01 Univ Nat Chunghsing Epitaxial wafer with low surface defect density
KR101148380B1 (en) 2009-01-21 2012-05-24 내셔날 충싱 유니버시티 Epitaxial structure having low defect density anf method of making the same
KR101134810B1 (en) * 2009-03-03 2012-04-13 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
WO2010101348A1 (en) 2009-03-05 2010-09-10 우리엘에스티 주식회사 Group 3 nitride semiconductor light-emitting device and manufacturing method thereof
JP5196403B2 (en) 2009-03-23 2013-05-15 国立大学法人山口大学 Method for manufacturing sapphire substrate and semiconductor device
KR20170102364A (en) * 2009-09-07 2017-09-08 엘시드 가부시끼가이샤 Semiconductor light emitting element
JP2012033521A (en) 2010-07-28 2012-02-16 Hitachi Cable Ltd Substrate and light-emitting element
JP5319641B2 (en) 2010-10-14 2013-10-16 株式会社東芝 Diagnostic circuit and semiconductor integrated circuit
JP2012103489A (en) 2010-11-10 2012-05-31 Dainippon Printing Co Ltd Protective film, polarizing plate, liquid crystal display panel, and display device
JP2012103490A (en) 2010-11-10 2012-05-31 Seiko Epson Corp Polarization element and method for manufacturing the same, projector, liquid crystal device and electronic equipment
JP2012124257A (en) 2010-12-07 2012-06-28 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
JP5730653B2 (en) 2011-04-18 2015-06-10 株式会社ソニー・コンピュータエンタテインメント Electronics
WO2013125823A1 (en) * 2012-02-20 2013-08-29 Seoul Opto Device Co., Ltd. High efficiency light emitting diode and method of fabricating the same
KR101763460B1 (en) * 2012-04-02 2017-07-31 아사히 가세이 가부시키가이샤 Optical substrate, semiconductor light-emitting element, and method for producing semiconductor light-emitting element
US9419249B2 (en) * 2012-04-13 2016-08-16 Asahi Kasei E-Materials Corporation Light extraction product for semiconductor light emitting device and light emitting device
KR20150143648A (en) * 2013-06-10 2015-12-23 아사히 가세이 이-매터리얼즈 가부시키가이샤 Semiconductor light-emitting device
WO2015016150A1 (en) * 2013-07-30 2015-02-05 独立行政法人情報通信研究機構 Semiconductor light emitting element and method for manufacturing same
TWI632696B (en) * 2013-10-11 2018-08-11 王子控股股份有限公司 Method for producing substrate for semiconductor light emitting elements, method for manufacturing semiconductor light emitting element, ?substrate for semiconductor light emitting elements, and semiconductor light emitting element
DE102014108301A1 (en) * 2014-06-12 2015-12-17 Osram Opto Semiconductors Gmbh Semiconductor chip and method for producing a semiconductor chip

Also Published As

Publication number Publication date
EP2835836A4 (en) 2015-08-05
EP2835836B1 (en) 2019-06-19
RU2014144362A (en) 2016-05-27
KR20160148052A (en) 2016-12-23
TWI531086B (en) 2016-04-21
BR112014024516A2 (en) 2017-07-25
JPWO2013150984A1 (en) 2015-12-17
RU2604568C2 (en) 2016-12-10
TW201344959A (en) 2013-11-01
JP6235459B2 (en) 2017-11-22
EP2942821A1 (en) 2015-11-11
US20150048380A1 (en) 2015-02-19
CN104205370A (en) 2014-12-10
KR20140133867A (en) 2014-11-20
EP2942820A1 (en) 2015-11-11
EP2942822A1 (en) 2015-11-11
US9614136B2 (en) 2017-04-04
EP2835836A1 (en) 2015-02-11
KR101763460B1 (en) 2017-07-31
EP2942819A1 (en) 2015-11-11
WO2013150984A1 (en) 2013-10-10
CN104205370B (en) 2017-03-22
KR101862500B1 (en) 2018-05-29

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