WO2011055203A3 - Vertical light emitting diode having an outward frame-type electrode and equipment thereof - Google Patents

Vertical light emitting diode having an outward frame-type electrode and equipment thereof Download PDF

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Publication number
WO2011055203A3
WO2011055203A3 PCT/IB2010/002775 IB2010002775W WO2011055203A3 WO 2011055203 A3 WO2011055203 A3 WO 2011055203A3 IB 2010002775 W IB2010002775 W IB 2010002775W WO 2011055203 A3 WO2011055203 A3 WO 2011055203A3
Authority
WO
WIPO (PCT)
Prior art keywords
type electrode
epitaxial structure
light emitting
semiconductor epitaxial
equipment
Prior art date
Application number
PCT/IB2010/002775
Other languages
French (fr)
Chinese (zh)
Other versions
WO2011055203A2 (en
Inventor
朱振甫
刘文煌
郑好钧
Original Assignee
旭明光电股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭明光电股份有限公司 filed Critical 旭明光电股份有限公司
Priority to CN2010800016616A priority Critical patent/CN102282685B/en
Priority to JP2012535952A priority patent/JP2013510421A/en
Priority to KR1020127011706A priority patent/KR101296353B1/en
Priority to EP10827985.2A priority patent/EP2498304A4/en
Publication of WO2011055203A2 publication Critical patent/WO2011055203A2/en
Publication of WO2011055203A3 publication Critical patent/WO2011055203A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

A vertical light emitting diode (LED) having an outward frame-type electrode and an equipment thereof are provided. The vertical LED (100) having an outward frame-type electrode comprises: a conductive substrate (1); a semiconductor epitaxial structure formed on the conductive substrate (1), the semiconductor epitaxial structure composed of an n-GaN layer (7), an active layer (9) and a p-GaN layer (11); a passivation layer (3) formed around the semiconductor epitaxial structure; a conductive frame (5) formed on the passivation layer (3) and contacted with the edge of the n-GaN layer (7) on the upper surface of the semiconductor epitaxial structure, an electricity connection generated between the conductive frame (5) and the semiconductor epitaxial structure.
PCT/IB2010/002775 2009-11-06 2010-10-29 Vertical light emitting diode having an outward frame-type electrode and equipment thereof WO2011055203A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2010800016616A CN102282685B (en) 2009-11-06 2010-10-29 Vertical light emitting diode having an outwardly disposed electrode
JP2012535952A JP2013510421A (en) 2009-11-06 2010-10-29 Vertical light emitting diode with outwardly arranged electrodes
KR1020127011706A KR101296353B1 (en) 2009-11-06 2010-10-29 Vertical light emitting diode having an outward frame-type electrode and equipment thereof
EP10827985.2A EP2498304A4 (en) 2009-11-06 2010-10-29 Vertical light emitting diode having an outward frame-type electrode and equipment thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW098137665A TWI394299B (en) 2009-11-06 2009-11-06 Vertical light emitting diode having an outwardly relocated eletrode
TW98137665 2009-11-06

Publications (2)

Publication Number Publication Date
WO2011055203A2 WO2011055203A2 (en) 2011-05-12
WO2011055203A3 true WO2011055203A3 (en) 2011-06-30

Family

ID=43970460

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/002775 WO2011055203A2 (en) 2009-11-06 2010-10-29 Vertical light emitting diode having an outward frame-type electrode and equipment thereof

Country Status (7)

Country Link
US (1) US8384088B2 (en)
EP (1) EP2498304A4 (en)
JP (1) JP2013510421A (en)
KR (1) KR101296353B1 (en)
CN (1) CN102282685B (en)
TW (1) TWI394299B (en)
WO (1) WO2011055203A2 (en)

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* Cited by examiner, † Cited by third party
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TW201222878A (en) * 2010-11-23 2012-06-01 Siliconware Precision Industries Co Ltd Light-permeating cover board, fabrication method thereof, and package structure having LED
US9299743B2 (en) 2011-04-20 2016-03-29 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus, backlight unit, liquid crystal display apparatus, and illumination apparatus
JP6006525B2 (en) * 2012-05-15 2016-10-12 スタンレー電気株式会社 Semiconductor light emitting device and lamp using the same
CN108140688B (en) * 2015-09-28 2021-01-29 曜晟光电有限公司 Semiconductor structure
JP6732586B2 (en) * 2016-07-28 2020-07-29 ローム株式会社 LED package
CN106407967B (en) * 2016-12-02 2019-11-08 信利光电股份有限公司 A kind of fingerprint mould group and its applying method and application
DE102018121338A1 (en) * 2018-08-31 2020-03-05 Osram Opto Semiconductors Gmbh OPTOELECTRONIC LIGHTING DEVICE, OPTOELECTRONIC LIGHTING DEVICE AND MANUFACTURING METHOD
DE102019204358A1 (en) * 2019-03-28 2020-10-01 Robert Bosch Gmbh Light-emitting semiconductor component

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CN101256989A (en) * 2008-01-31 2008-09-03 金芃 Semiconductor epitaxial thin film encapsulation of vertical structure

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EP2270875B1 (en) * 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Sermiconductor light emitting device and method of manufacturing the same
US6674096B2 (en) 2001-06-08 2004-01-06 Gelcore Llc Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution
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Also Published As

Publication number Publication date
US20110108851A1 (en) 2011-05-12
JP2013510421A (en) 2013-03-21
EP2498304A4 (en) 2014-03-05
KR20120068036A (en) 2012-06-26
KR101296353B1 (en) 2013-08-14
EP2498304A2 (en) 2012-09-12
TW201117423A (en) 2011-05-16
TWI394299B (en) 2013-04-21
WO2011055203A2 (en) 2011-05-12
US8384088B2 (en) 2013-02-26
CN102282685A (en) 2011-12-14
CN102282685B (en) 2013-05-29

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