TW200735407A - Light-emitting diode structure having bonding-pad reflection layer - Google Patents

Light-emitting diode structure having bonding-pad reflection layer

Info

Publication number
TW200735407A
TW200735407A TW095108585A TW95108585A TW200735407A TW 200735407 A TW200735407 A TW 200735407A TW 095108585 A TW095108585 A TW 095108585A TW 95108585 A TW95108585 A TW 95108585A TW 200735407 A TW200735407 A TW 200735407A
Authority
TW
Taiwan
Prior art keywords
light
bonding
electrode
reflection layer
layer
Prior art date
Application number
TW095108585A
Other languages
Chinese (zh)
Other versions
TWI302757B (en
Inventor
yin-cheng Zhu
Shri-Ming Pan
Fen-Ren Chien
Original Assignee
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Priority to TW095108585A priority Critical patent/TW200735407A/en
Publication of TW200735407A publication Critical patent/TW200735407A/en
Application granted granted Critical
Publication of TWI302757B publication Critical patent/TWI302757B/zh

Links

Abstract

The present invention relates to a light-emitting diode (LED) structure having a bonding-pad reflection layer, which comprises a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, an ITO layer, a first bonding-pad reflection layer, a second bonding-pad reflection layer, a third electrode, and a fourth electrode. When a bias voltage is applied to the third electrode and the fourth electrode of LED, and the bias voltage is the operating voltage, the light-emitting layer emits light, wherein the light emitted from the light-emitting layer to the electrode is reflected by the first bonding-pad reflection layer and the second bonding-pad reflection layer so as to prevent the third electrode and the fourth electrode from absorbing the light emitted from the light-emitting layer and thereby further promote the light-emitting performance of the LED.
TW095108585A 2006-03-14 2006-03-14 Light-emitting diode structure having bonding-pad reflection layer TW200735407A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095108585A TW200735407A (en) 2006-03-14 2006-03-14 Light-emitting diode structure having bonding-pad reflection layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095108585A TW200735407A (en) 2006-03-14 2006-03-14 Light-emitting diode structure having bonding-pad reflection layer

Publications (2)

Publication Number Publication Date
TW200735407A true TW200735407A (en) 2007-09-16
TWI302757B TWI302757B (en) 2008-11-01

Family

ID=45070555

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108585A TW200735407A (en) 2006-03-14 2006-03-14 Light-emitting diode structure having bonding-pad reflection layer

Country Status (1)

Country Link
TW (1) TW200735407A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394299B (en) * 2009-11-06 2013-04-21 Semileds Optoelectronics Co Vertical light emitting diode having an outwardly relocated eletrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394299B (en) * 2009-11-06 2013-04-21 Semileds Optoelectronics Co Vertical light emitting diode having an outwardly relocated eletrode

Also Published As

Publication number Publication date
TWI302757B (en) 2008-11-01

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