1251352 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種具螢光體之模封材料之製造方、、 使用於發光二極體元件之製造方法，尤係關於—種包含螢 光體之發光二極體元件之製造方法。 【先前技術】</ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> A method of manufacturing a light-emitting diode element. [Prior Art]
圖1係習知之發光二極體元件之示意圖。發光二極體元 件10主要包含固定於導線架(1㈡d frame 杯型構造處 之半導體元件的M (dle@，該晶粒12藉由金屬導= 1 5刀別與導線架1 3之陰極1 3a及陽極1 3b電性相連，而形 成一發光元件。該晶粒丨2可以是發光二極體或雷射二極 體，其中以氮化物為發光層之發光半導體為最多。於該杯 型構造處有螢光體11填滿，因此當晶粒12接收外部電力 供應會發出初始光線，而覆蓋於四周之螢光體丨丨會被初始 光線激發，並會產生異於該初始光線之螢光光線。該初始 光線與該螢光光線會混合為一多波長光線，最後該多波長 光線會穿透模封材料14而射出。 σ亥勞光體11大多係利用點膠機（dispenser)將膠狀勞光 體11適量吐出，並覆蓋（potting)於杯型構造内。然而每 -人吐出之膠量常隨著參數設定、黏度及時間而改變，因此 保^持其均一性並非容易之事。.另外，膠狀螢光體11中固體 顆粒會因重力而沈澱至杯型構造處底部，若距固化（ curing ) 之洪烤（bake )時間愈久則沈澱現象愈嚴重。很明顯地， 依據傳統之製程生產之發光二極體元件1 〇會隨著貨批 H:\HU\LGC\A34276\ 101475\ 101475., 1251352 (lot)而改變光線特性，因此已無法滿足色度及相關品質 上低變異之基本要求。 、”不上所述，市场上亟需要一種使發光二極體元件品質穩 定之製造方法，俾能改善發光二極體元件之生產良率。 【發明内容】 本發明之目的係提供一種使螢光體均勻分佈之發光二極 體元件的製造方法，在模封材料内已混合均勻之螢光體， 藉由傳遞模封使模封材料覆蓋於發光二極體上。 本發明之另一目的係提供一種簡化發光二極體元件製程 之方法，其係將螢光體混合於模封材料内，如此較傳統製 程可省去覆蓋膠狀螢光體之步驟。 為達上述目的，本發明揭示一種具螢光體之模封材料之 製造方法及其使用於發光二極體元件之製造方法，首先提 供一種發光二極體晶片，再將發光二極體晶片固接及電性 連接於基板或導線架。並以模封方式將混合有螢光體之模 封材料覆蓋於該發光二極體晶片上，其中該螢光體係由一 銪致活之驗土知氧化物、一銪致活石夕酸鹽、一銪致活準石夕 酸鹽及一銪致活過氧磷酸鹽中至少一種化合物所組成，又 該螢光體係與模封材料於混練時或混練前混合。模封完之 基板或導線架切斷為獨立之複數個發光二極體元件。該螢 光體吸收該發光二極體晶片發出之初始光線，而產生波長 異於該初始光線之螢光，如此可混合該初始光線及螢光而 調出所需之白光或顏色光。 該銪致活之鹼土族氧化物係以氧化鎂（MgO )、氧化舞 H:\HU\LGC\A34276\ 101475\101475.doc 1251352 C Ca〇）、氧化锶（sr〇 )及氧化鋇（Ba〇）其中至少一種物 質為主體，其活化劑（actlvator )為二價銪Eu2+。 該銪致活矽酸鹽之主體化學式為A2Sl〇4，其中A係選自 鳃、鈣、鋇、鎂（Mg)、鋅（Zn)及鎘（cd)中至少一者。 該銪致活準矽酸鹽之主體化學式為Asi〇3，其中A係選自 I思、約、鋇、錤、辞及鑛中至少一者。 该銪致活過氧碟酸鹽之主體化學式為 _ (Ai + yBxCyhP^，其中A係選自鳃、鈣、鋇、鎂、鋅及鎘 中至少一者；B係選自銪、猛（Μη )、鉬（Mo )及鈽（Ce ) 中至少一者；C係選自銪、錳、鉬及鈽中至少一者；又χ 及y需滿足0<X< 1及〇<y< 1。 發光二極體晶片可以是氮化物系（InGaAiN )半導體之發 光二極體或硒化鋅（ZnSe)系之發光二極體，尤其以氮化 物系半導體之發光二極體為較佳。 【實施方式】 • 一般半導體封裝用模封材料多為環氧樹脂（epoxy resin)組成物，其係由環氧樹脂及其硬化劑（hardener)、 催化劑（accelerator)、脫模劑（m〇ld release agent)及耐 燃劑（flame retardant)等之添加劑，和佔組成比7〇〜9〇 ， ％重量之填充材料（filler)所構成，具有電氣特性佳、耐 _ 熱性優及適合量產之優點。該環氧樹脂組成物之製造方法 ㈣上述組成物依指定比例混合，再以輥輪、㈣混練機、 單軸混練機及輥輪之系列組合進行混練步驟，或者以雙軸 混練機亦可進行混練。混練物經過札壓會形成薄片狀物 [：\KU\LGC\A34276\ 1 〇 1475\ 101475.doc 1251352 體，該薄片狀物體冷卻後可再進行粉碎，最後就加工產生 - 常見圓柱狀之環氧樹脂組成物。 本發明係將銪致活之鹼土族氧化物、銪致活矽酸鹽、銪 致活準矽酸鹽及銪致活過氧磷酸鹽中至少一種化合物與環 氧樹脂、添加劑及填充材料先行混合，然後才進行上述混 練步驟，或者是於混練過程中才混合上述螢光體。之後， 進订札壓成型及粉碎，並依照所需要之形狀形成環氧樹脂 • 模封材料（EMC)。常見之形式有板狀模封材料（SheetMC; SMC)’或塊狀模封材料（Bulk MC; BlvlC)。 銷致活之驗土族氧化物係以氧化鎂（Mg〇 )、氧化妈 (CaO )、氧化锶（Sr〇 )及氧化鋇（Ba〇 )其中至少一種物 質為主體，其活化劑（activat〇r )為二價銪Eu2+。 該銪致活矽酸鹽之主體化學式為AiSi〇4，其中A係選自 鋰、鈣、鋇、鎂（Mg)、鋅（Zn)及鎘（Cd)中至少一者。 銪致活準矽酸鹽之主體化學式為ASi〇3,其中A係選自 • 鳃、鈣、鋇、鎂' 辞及鎘中至少一者。 銪致活過氧磷酸鹽之主體化學式為（AixyBxCy)2P2〇7，其 中A係選自锶、鈣、鋇、鎂、鋅及鎘中至少一者；b係選 自銪、錳（Μη )、鉬（Mo )及鈽（Ce )中至少一者；c係 - 選自銪、猛、钥及鋪中至少一者；又X及y需滿足0<x< i - 及 0 < y < 1 〇 圖2係本發明之製造方法製作之發光二極體元件之剖面 不思圖。發光二極體兀件20主要包含固定於導線架23杯 型構造處之半導體元件的晶粒22，該晶粒22藉由金屬導線 H:\HU\LGC\A34276\丨 0 丨475\丨 〇 丨 475 d〇c 1251352 刀別與導線架2 3之陰極2 3 a及陽極2 3 b電性相連，而幵） 成發光兀件。該晶粒22可以是發光二極體或雷射二極 體尤其以氮化物為發光層之發光半導體為較佳。又晶粒 22多藉由銀膠（silver adhesive)固定於導線架^杯型構 造處之表面。 於該杯型構造處有螢光體21填滿，因此當晶粒22接收 外。卩電力供應會發出初始光線。覆蓋於四周之螢光體21會 破初始光線激發，並因而產生異於該初始光線之 2 線；。該初始光線與該榮光光線會混合為一多波長光線，最 後3玄多波長光線會穿透模封材料24而射出。若該晶粒Μ 發出藍色之初始光線，則榮光體21可選擇發出紅色或綠色 螢光之螢光物質’最後所有光線調和形成人眼所看見多波 長之白色光線。 该模封材料24係一均勻混合螢光 蛩九體21之透明環氧樹脂 、，且成物’再-同注射入一彈頭狀之模 蓋於晶粒22之表面。 」凡王復 相較於上述圖2中針腳（ln) it封裝外觀，圖3 一表面黏著（SMD)型式之恭止丄 ’、 1式之务先二極體元件30。晶粒32 固定於P型導電銅箔33a上， 電1猎由金屬導線35與1>型導 電銅治及N型導電銅羯33b .电r玍相運，其申P型導雷 銅、治33a、N型導電銅帛33b及絕緣層33 基板33。當晶粒32接收外$雷 /、 “路之 ^ 邛電力時會發出初始顏色朵綠 该初始光線會激發模封材料3 八 /先線， 生榮n么 中句勻刀佈之螢光體31產 地光'線^刀始顏色光與該螢光光線會混合為-多波 H:\HU\LGC\A34276\ 101475\ 101475.doc 10- 1251352 長光線，最後該多波長光線會穿透包覆整個基 模封材料34而射出。 上方之 量產針腳型式或表面黏著型式之發光二極體元件 壓模後，大多仍需要沖帛（tnmming)或切割才 極體兀件。在沖模及切割· ’因環氧樹脂 尚未元王父鍊（cross_link)反應 材料34使其真正硬化。 斤、要烘烤固化模封Figure 1 is a schematic illustration of a conventional light emitting diode component. The LED component 10 mainly comprises M (dle@, which is fixed to the semiconductor component of the lead frame of the lead frame (1). The die 12 is connected to the cathode 13 3 of the lead frame 13 by a metal guide = 15 5 And the anode 13b is electrically connected to form a light-emitting element. The die 2 can be a light-emitting diode or a laser diode, wherein a light-emitting semiconductor having a nitride as a light-emitting layer is the most. The phosphor 11 is filled, so that when the crystal chip 12 receives the external power supply, it will emit initial light, and the fluorescent material covering the surrounding area will be excited by the initial light, and will generate fluorescence different from the initial light. The initial light and the fluorescent light are mixed into a multi-wavelength light, and finally the multi-wavelength light passes through the molding material 14. The σHaiguang body 11 mostly uses a dispenser to apply the glue. The smear 11 is spit out and potted in the cup structure. However, the amount of glue spit out per person often changes with parameter setting, viscosity and time, so it is not easy to maintain its uniformity. In addition, the colloidal phosphor 11 is solid The particles will settle to the bottom of the cup structure due to gravity, and the longer the bake time from curing, the more severe the precipitation phenomenon. Obviously, the light-emitting diode element produced according to the conventional process 1 〇 The light characteristics will change with the shipment batch H:\HU\LGC\A34276\ 101475\ 101475., 1251352 (lot), so the basic requirements of low variation of color and related quality can not be satisfied. In the market, there is a need for a manufacturing method for stabilizing the quality of a light-emitting diode element, which can improve the production yield of a light-emitting diode element. SUMMARY OF THE INVENTION The object of the present invention is to provide a light-emitting device that uniformly distributes a phosphor. In the manufacturing method of the diode element, a uniform phosphor is mixed in the molding material, and the molding material is covered on the light emitting diode by transfer molding. Another object of the present invention is to provide a simplified light emitting diode. The method for manufacturing a polar body component, which is a method of mixing a phosphor in a molding material, so that the step of covering the colloidal phosphor can be omitted compared with the conventional process. To achieve the above object, the present invention discloses a firefly. The manufacturing method of the body molding material and the manufacturing method thereof for the light emitting diode element firstly provide a light emitting diode chip, and then fix and electrically connect the light emitting diode chip to the substrate or the lead frame. Coating a phosphor-filled molding material on the light-emitting diode wafer in a mold-sealing manner, wherein the fluorescent system is made of a living earth-sensing oxide, a bismuth-active oxide a composition of at least one compound of a living peroxate and a living peroxyphosphate, and the fluorescent system and the molding material are mixed during mixing or before mixing. The molded substrate or lead frame Cutting into a plurality of independent light-emitting diode elements. The phosphor absorbs the initial light emitted by the light-emitting diode chip to generate a fluorescent light having a wavelength different from the initial light, so that the initial light and the fluorescent light can be mixed. And bring out the desired white or color light. The alkaline earth oxides of the alkaloids are magnesium oxide (MgO), oxidized dance H:\HU\LGC\A34276\101475\101475.doc 1251352 C Ca〇), strontium oxide (sr〇) and barium oxide (Ba 〇) at least one of the substances is the main body, and the activator thereof is divalent europium Eu2+. The main chemical formula of the bismuth citrate is A2Sl〇4, wherein the A is selected from at least one of strontium, calcium, barium, magnesium (Mg), zinc (Zn) and cadmium (cd). The main chemical formula of the bismuth bismuth citrate is Asi 〇 3, wherein the A is selected from at least one of I think, about, 钡, 錤, 辞 and mine. The main chemical formula of the bismuth-activated peroxyacid salt is _ (Ai + yBxCyhP^, wherein the A is selected from at least one of strontium, calcium, barium, magnesium, zinc and cadmium; and the B is selected from the group consisting of 铕, 猛 (Μη And at least one of molybdenum (Mo) and cerium (Ce); the C system is selected from at least one of lanthanum, manganese, molybdenum and lanthanum; and y and y are required to satisfy 0 <X<1 and 〇<y<1 The light-emitting diode wafer may be a light-emitting diode of a nitride-based (InGaAiN) semiconductor or a light-emitting diode of a zinc selenide (ZnSe) type, and particularly preferably a light-emitting diode of a nitride-based semiconductor. Embodiments] • Generally, the molding materials for semiconductor packaging are mostly epoxy resin compositions, which are made of epoxy resin and hardener, accelerator, and release agent (m〇ld release). Additives such as an agent) and a flame retardant, and a filler having a composition ratio of 7 〇 to 9 〇, % by weight, have the advantages of good electrical characteristics, excellent heat resistance, and suitable mass production. The method for producing the epoxy resin composition (4) mixing the above components in a specified ratio, and then using a roller (4) Mixing machine, single-axis kneading machine and roller combination for mixing, or mixing with double-axis kneading machine. The kneading material will form a sheet by pressing [:\KU\LGC\A34276\ 1 〇1475\101475.doc 1251352 body, the flakes can be further pulverized after cooling, and finally processed to produce a common cylindrical epoxy resin composition. The present invention is an alkaline alkaline earth oxide At least one compound of the active citrate, the bismuth bismuth citrate and the bismuth-activated peroxyphosphate is mixed with the epoxy resin, the additive and the filler before the above-mentioned mixing step, or during the mixing process. The above phosphors are mixed, and then formed and pressed, and epoxy resin molding materials (EMC) are formed according to the desired shape. A common form of sheet molding material (SheetMC; SMC)' or Bulk molding material (Bulk MC; BlvlC). The soil-killing soil oxides are made of magnesium oxide (Mg〇), oxidized mother (CaO), strontium oxide (Sr〇) and cerium oxide (Ba〇). a substance is the main body, The activator (activat〇r) is divalent europium Eu2+. The main chemical formula of the active bismuth citrate is AiSi〇4, wherein the A is selected from the group consisting of lithium, calcium, barium, magnesium (Mg), zinc (Zn) and cadmium. At least one of (Cd). The main chemical formula of bismuth bismuth citrate is ASi〇3, wherein A is selected from at least one of 鳃, calcium, strontium, magnesium, and cadmium. The main chemical formula of the phosphate is (AixyBxCy)2P2〇7, wherein the A is selected from at least one of strontium, calcium, barium, magnesium, zinc and cadmium; and the b is selected from the group consisting of strontium, manganese (Mn), molybdenum (Mo) and At least one of 钸(Ce); c-system - selected from at least one of 铕, 猛, key, and 铺; and X and y need to satisfy 0 <x< i - and 0 < y < 1 〇 Figure 2 The cross section of the light-emitting diode element produced by the manufacturing method of the present invention is not considered. The LED device 20 mainly comprises a die 22 of a semiconductor component fixed at a cup-shaped configuration of the lead frame 23, the die 22 being passed through a metal wire H:\HU\LGC\A34276\丨0 丨475\丨〇丨475 d〇c 1251352 The knife is electrically connected to the cathode 2 3 a of the lead frame 2 3 and the anode 2 3 b, and the 幵) is a light-emitting element. The crystal grain 22 may be a light emitting diode or a laser diode, particularly a light emitting semiconductor having a nitride as a light emitting layer. Further, the crystal grains 22 are fixed to the surface of the lead frame type by a silver adhesive. At the cup configuration, the phosphor 21 is filled, so that the die 22 is received.卩The power supply will emit initial light. The phosphor 21 covering the surrounding area will be excited by the initial light and thus produce a line different from the initial light; The initial light and the glory light are mixed into a multi-wavelength light, and the last 3 Xuan multi-wavelength light passes through the molding material 24 to be emitted. If the grain Μ emits a blue initial light, the glare body 21 can select a red or green fluorescent material. Finally, all the light harmonizes to form a white light of a plurality of wavelengths seen by the human eye. The molding material 24 is a transparent epoxy resin which uniformly mixes the fluorescent iridium body 21, and the resultant is re-injected into a warhead-like mold to cover the surface of the crystal grain 22. In addition to the pin (ln) it package appearance in Figure 2 above, Figure 3 is a surface-adhesive (SMD) type of 恭 ’ ', 1 type bisexual element 30. The die 32 is fixed on the P-type conductive copper foil 33a, and the electric 1 is hunted by the metal wire 35 and the 1> type conductive copper and the N-type conductive copper 羯 33b. 33a, N-type conductive copper crucible 33b and insulating layer 33 substrate 33. When the die 32 receives the outer $Ray/, "the road's ^ 邛 power will give off the initial color green, the initial light will stimulate the molding material 3 八 / first line, Sheng Rong n 中 匀 匀 之 之 之 体31 origin light 'line ^ knife start color light and the fluorescent light will be mixed into - multi-wave H: \ HU \ LGC \ A34276 \ 101475 \ 101475.doc 10- 1251352 long light, and finally the multi-wavelength light will penetrate the package The entire base mold sealing material 34 is coated and ejected. After the above-mentioned mass-produced pin type or surface-adhesive type light-emitting diode element is molded, most of them still need to be tnmming or cut into a pole piece. · 'Because the epoxy resin has not yet passed through the cross-link reaction material 34, it really hardens.
本發明之技術内容及技術特點已揭示如上，然而孰悉本 顿術之人士仍可能基於本發明之教示及揭示而作㈣不 :離本發明精神之替換及修飾。因此，本發明之保護範圍 :不限於實施例所揭示者，而應包括各種不背離本發明之 "奐及修飾’並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 圖1係習知之發光二極體元件之示意圖. 圖2係本發明之製造方法製作之二極體元件之剖 面示意圖；以及 一發光二極體元件之 圖3係本發明之製造方法製作之另 剖面示意圖。 【主要元件符號說明】 11 螢光體 13 導線架 13b 陽極 15 金屬導線 21 螢光體 10 發光二極體元件 12 晶粒 13a 陰極 14 模封材料 20 發光二極體元件 H.\HU\LGC\A34276\ 101475\ I 〇 1475.doc 1251352 22 晶粒 23a 陰極 24 权封材料 30 發光二極體元件 32 晶粒 33a P型導電銅箔 33c 絕緣層 35 金屬導線The technical content and technical features of the present invention have been disclosed as above, however, those skilled in the art can still make a substitute or modification from the spirit of the present invention based on the teachings and disclosures of the present invention. Therefore, the scope of the invention is not limited by the scope of the invention, and the invention is intended to be included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a conventional light-emitting diode element. FIG. 2 is a schematic cross-sectional view of a diode element fabricated by the manufacturing method of the present invention; and FIG. 3 of a light-emitting diode element is the present invention. A schematic cross-sectional view of the manufacturing method. [Main component symbol description] 11 Phosphor 13 Lead frame 13b Anode 15 Metal wire 21 Phosphor 10 Light-emitting diode element 12 Die 13a Cathode 14 Molding material 20 Light-emitting diode element H.\HU\LGC\ A34276\ 101475\ I 〇1475.doc 1251352 22 Grain 23a Cathode 24 Weighting material 30 Light-emitting diode element 32 Grain 33a P-type conductive copper foil 33c Insulation layer 35 Metal wire
23 導線架 23b 陽極 25 金屬導線 31 螢光體 33 基板 33b N型導電銅箔 34 模封材料23 lead frame 23b anode 25 metal wire 31 phosphor 33 substrate 33b N-type conductive copper foil 34 molding material
H:\KU\LGC\A34276\101475\10l475.doc -12 -H:\KU\LGC\A34276\101475\10l475.doc -12 -