M342618 八、新型說明： 【新型所屬之技術領域】 鐘=係有關於一種發光二極體晶片封裝， 一種具有㈣率散熱基板之發光二極體“封裝結構 【先前技術】 请苓閱第一圖至第一 B圖所示，習知習知一网 正極導電執跡12 3與負極導電執跡ί:1 狀基=體?:？數個發;二極趙晶片2、設置於該條 -、負極端(2〇:=τ r光二極體晶片〜之 板本體1 a之正別電性連接於該條狀基 (Si〇2)n 負導電執跡（1 2 a、工3 a ) 應之該等發㈣光W 3 a分職蓋於相對 個不透光框半^ 片 （S1〇4);最後，將複數 兀i木層4a分別圍繞該光 ^ 母-個瑩光膠體3 a只露出體h，以使得 然而，由於兮政^ 尤面30a (S106)〇 由低導熱性質之:邑緩二板^體1 a之絕緣本體1 〇 a係 生之熱能將無法有效地傳導至: 體晶片的封裝結以、;^ 筹疋王無法達到有效之散熱目的。 M342618 【新型内容】 1本創作所要解決的技術問題，在於提供一種具有高效 率散熱基板之發光二極體晶片封裝結構。本創作之發光二 才亟體晶片封裝結構係使用一具有高導熱性質之基板單 元，並且該基板單元係直接分割成一正極導電基板、一負 極導電基板、及複數個彼此分開且分別設置於該正極導電 ^板及5亥負極導電基板之間之架橋基板。因此，複數個發 ，二極體晶片係可直接電性地設置於該基板單元上，以使 传ϋ亥寺發光一極體晶片能透過該基板單元以達到良好之 散熱效果。. 再者，本創作係透過晶片直接封裝（Chip〇nBoard， C〇B)製程並利用壓模（die mold)的方式，以使得本創 作可有效地縮短其製程時間，而能進行大量生產。此外， 本創作之結構設計更適用於各種光源，諸如背光模組、事 飾燈條、照明用燈、或是掃描器光源等應用，皆為本創$ 所應用之範圍與產品。 為了解決上述技術問題，根據本創作之其中一種方 案，提供一種具有高效率散熱基板之發光二極體晶片封壯 結構，其包括：一基板單元、一黏著膠體、複數個發光: 極體晶片、複數個封裝膠體、及複數個框架層。 丹Y，琢泰孤平凡妳六'一此独導電基板、一負極 電基板、及至少一設置於該正極導電基板及該負極導電 板之間之架橋基板。該黏著膠體係填充於該正極導電 板、該負極導電基板及該架橋基板之間，以連結並固: 正極導電基板、該負極導電基板及該架橋基板在一 等發光二極體晶片係分別設置於該架橋基板上，並且气 M342618 麵該正轉㈣板與該負極 ¥電基板之間该專封裝膠體係分別覆蓋於該等發光 f晶片上。該雜架層#、分·繞該等縣龍，以使得 •裝膠體形成複數個相對應該等發光二極體晶片 之牧无面〇 另外該等發光—極體晶#及該等 例兩種實施態樣·· 不7版货~、有下 ，’第-严實施態樣:該等封裝膠體係為複數個螢光膠 「 Γ: 二 Τΐ二極體晶片係為一藍色發光二極體晶 δ而^或「由-純樹脂與_s光粉混合而成」。 種實《樣：料龍_係為魏個透光膠 一極脰日曰片組（例如由紅多、蛑洛 ^ 晶片所組合而成之發光^體=ft種發光二極體 #膜鲈在ϋ 、*nn% 日日片組）。此外，每一個透 光务體係可為-透明鄉或—透明環氧樹脂。 於發光二極體晶片直接電性地設置 於該基板早兀上，以使得該等發光二 板單元以達到良好之散熱效 ^ “透過該基 接封裝製程並利用顧的方式/ β ϋ乍係透過晶片直 短其製程時間，而能進行3= 使仔本創作可有效地縮 之技I了手能/及進=瞭解本創作為達成預定目的所採取 與附圖，相信本創作之目的、㈣“士補作之汗細°允月 、而所附圖式僅提供參寺盘說明用， 亚非用來對本創作加以限制者。 、 7 M342618 【貫施方式】M342618 VIII, new description: [New technology field] Clock = related to a light-emitting diode chip package, a light-emitting diode with (four) rate heat sink "package structure [previous technology] Please refer to the first figure As shown in the first B diagram, it is known that a positive electrode conductive trace 12 3 and a negative electrode conductive trace ί: 1 base = body?: number of hair; 2 pole Zhao chip 2, set in the strip - The negative terminal (2〇:=τ r photodiode wafer ~ the plate body 1 a is electrically connected to the strip base (Si〇2) n negative conduction trace (1 2 a, work 3 a ) The hairs of the four (4) light W 3 a are placed on the opposite opaque frame half (S1〇4); finally, the plurality of 兀i wood layers 4a are respectively surrounded by the light-mother-glued colloids 3 a only exposes the body h, so that, due to the low thermal conductivity of the 兮 ^ 30 30 a a S S S S S S S 邑 邑 邑 邑 邑 邑 二 二 二 二 二 二 二 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系To: The package of the body wafer is not to be able to achieve effective heat dissipation. M342618 [New content] 1 The technical problem to be solved in this creation is to provide a A light-emitting diode package structure having a highly efficient heat-dissipating substrate. The light-emitting diode chip package structure of the present invention uses a substrate unit having high thermal conductivity, and the substrate unit is directly divided into a positive conductive substrate, a negative electrode conductive substrate, and a plurality of bridge substrates separated from each other and disposed between the positive electrode conductive plate and the negative electrode conductive substrate. Therefore, a plurality of hair and diode chips can be directly electrically disposed on the substrate. In the unit, the light-emitting one-pole wafer of the Chuanhai Temple can pass through the substrate unit to achieve good heat dissipation effect. Furthermore, the creation process is directly packaged by a chip (Chip〇nBoard, C〇B) process and utilizes pressure. The way of the die mold, so that the creation can effectively shorten the processing time, and can be mass-produced. In addition, the structural design of the creation is more suitable for various light sources, such as backlight modules, lighting strips, lighting Applications such as lamps or scanner light sources are the scope and products of the application. In order to solve the above technical problems, according to the creation of this One embodiment provides a light-emitting diode wafer sealing structure with a highly efficient heat-dissipating substrate, comprising: a substrate unit, an adhesive body, and a plurality of light-emitting layers: a polar body wafer, a plurality of encapsulants, and a plurality of frame layers Dan Y, 琢泰孤平凡六's one unique conductive substrate, a negative electrode substrate, and at least one bridging substrate disposed between the positive conductive substrate and the negative conductive plate. The adhesive system is filled in the positive electrode Between the conductive plate, the negative conductive substrate, and the bridge substrate, the positive conductive substrate, the negative conductive substrate, and the bridge substrate are respectively disposed on the bridge substrate, and the gas is disposed on the bridge substrate. The special encapsulant system on the M342618 surface between the forward (four) plate and the negative electrode and the electric substrate is respectively covered on the illuminating f-wafer. The miscellaneous layer #, the sub-circle of the county, so that the colloid is formed into a plurality of relatively light-emitting diode wafers, and the other types of light-emitting body crystals and the like Implementation Aspect·· No 7 version of the product~, there are, 'the first strict implementation: the package system is a plurality of fluorescent glues. Γ: The diode diode is a blue light-emitting diode Body crystal δ and ^ or "mixed with - pure resin and _s light powder". The kind of "sample: material dragon _ is a Wei light-transparent glue one-pole 脰 曰 film group (for example, the combination of red, 蛑 ^ ^ wafers of light-emitting body = ft kind of light-emitting diodes #膜鲈In ϋ, *nn% day film group). In addition, each of the permeable systems can be - transparent or transparent epoxy. The light-emitting diode chip is directly electrically disposed on the substrate, so that the light-emitting two-plate unit can achieve a good heat dissipation effect through the base package process and utilize the method/β system Through the wafer to shorten the processing time of the wafer, and can carry out 3 = to make the creation of the book can be effectively reduced. I can understand the purpose of this creation for the purpose of achieving the intended purpose, I believe that the purpose of this creation, (4) "The sweat of the scholars is fine, and the drawings are only for the explanation of the temple. The Asian and African are used to limit the creation." , 7 M342618 [Practical method]
請參間笛_ A 作第一f〜A圖至第二D圖、及第二E圖所示，本創 極體晶片供一種具有高效率散熱基板之發光二 Α圖所心，其包括下列步m請配合第二 0、一 ，、一基板皁701，其具有一正極導電基板1 於_正朽電基板1 1、及複數個彼此分開且分別設置 電基板1Ό及該負極導電基板η之間之架 Ζ (S200) ’該基板單元1係可為一軟基板、一 、，土陶瓷基板、或一銅基板。 ， 正極導月配合第二B圖所示’填充一黏著膠體2於該 1 hpl土板1 ◦、該負極導電基板1 1及該等架橋基板 雷其被^以連結並固定該正極導電基板1 0、該負極導 ^二 及該等架橋基板1 2在一起（S202)，立中嗜 #· 係了為一導熱黏著膠體（heat-conducting adhesiveec)lk)id) .’其係由高導熱材料所製成。 士接著，請配合第二C圖所示， 個光一 極體晶片3於該基板單元工上，廿曰予叫九一 炼栌日ϋ qm 並且電性連接該等發光二 桎Κ3於該正極導電基板i σ與 該 1之間（S204)，其中每一個恭止-上、七电基板1 备办止一 么光—極體晶片3係為一藍 並:每一個發光二極體晶片3係透過 相對應之¥麟並以打線的方式，以與該 正、負極導電基板（1 0、工工） + 土 1之 s 丄1义產生電性連接。 緊接著，請配合第二D圖及第二E圖所示，分別F罢 複數個螢光膠體4於該等發光二極體晶片覆- 最後，透過複數個框架層5分別圍繞該等螢光勝體）以 使得每-個f光膠體4形成複數個相對應該等發光二極 M342618 4係4 〇 (S2。8)。再者’每-個螢光膠體 樹㈣—勞光^勝舆一螢光粉混合而成」或者「由—環氧 複數個不、ί么 成」。此外，該等框架層5係可為 數们不^框架層，例如··白色框架層。 施例係提供二::圖/二::Ε圖广’本創作第-實 封裝結構，1包括、有基板之發光二極體晶片 ^ 3、複數個螢光勝體4、及複數個框架Please refer to the flute _ A as the first f~A to the second D and the second E. The imaginary body wafer is provided with a light-emitting diode having a high-efficiency heat-dissipating substrate, which includes the following Step m, please cooperate with the second 0, a, a substrate soap 701, which has a positive conductive substrate 1 on the positive electrode substrate 1 1 , and a plurality of separate and separately disposed electrical substrate 1 and the negative conductive substrate η Between the frames (S200) 'The substrate unit 1 can be a flexible substrate, a ceramic earth substrate, or a copper substrate. The positive electrode guide is matched with the second adhesive material 2 to fill the adhesive body 2 to the 1 hpl soil plate 1 , the negative conductive substrate 1 1 and the bridge substrate are connected to and fix the positive conductive substrate 1 0. The negative electrode guide and the bridge substrate 12 are together (S202), and the Lizhong is a heat-conducting adhesive lk) id). Made. Then, in conjunction with the second C diagram, a photo-polar body wafer 3 is placed on the substrate unit, and the illuminating diodes are electrically connected to the positive electrodes. Between the substrate i σ and the 1 (S204), each of the singular-upper and seven-electrode substrates 1 is provided with a light--the polar body wafer 3 is a blue color: each of the light-emitting diode chips 3 is transmitted through The corresponding cymbal is electrically connected to the positive and negative conductive substrates (10, gong) + soil 1 by means of wire bonding. Then, as shown in the second D diagram and the second E diagram, a plurality of phosphor colloids 4 are respectively applied to the LED arrays. Finally, the phosphor layers are respectively surrounded by the plurality of frame layers 5. The body is formed such that each of the optical colloids 4 forms a plurality of corresponding light-emitting diodes M342618 4 series 4 〇 (S2. 8). In addition, each of the fluorescent colloidal trees (four) - Laoguang ^ Shengyi and a fluorescent powder are mixed" or "by - epoxy multiples,". Further, the frame layers 5 may be a number of frame layers, for example, a white frame layer. The application system provides two:: Fig. 2:: Ε图广' The first-real package structure of the creation, 1 includes a light-emitting diode chip with a substrate ^ 3, a plurality of fluorescent bodies 4, and a plurality of frames
導電基板土i !早;Γ 1係具?一正極導電基板10、—負極 負極導電美们^少一設置於該正極導電基板Γ0及該 埴充於ΐ二^之間之架橋基板1 2。該黏著朦體2係 振^，正極¥電基板1 0、該負極導電基板1工及該架 橋土板.1 2之間，以連結並固定該正 D 負極導電基板U及該架橋基板12在^基=^光該 ，體晶片3係分別設置於該架橋基板1 2上，並且^等發 等發光二二θ H f間。該^光膠體4係分別覆蓋於該 光^:^。該等框架層5係分_^^ 4,以使件母-個s光膠體4形成複數個、談 專發光二極體晶片3之投光面4 〇。 ' 請參閱第三A圖及第三B圖所示，第二實施例面的 步驟（可視為步驟S300至S304)係盥第一丧i、 S200至顯相同。 ^例之步驟 請參閱第三A圖及第三B圖所示，第二實施例之驟 S304之後，更進-步包括：分別覆蓋複數個透光膠體 於該等發光二極體晶片3,上（S3〇6);最後，透過複數個 M342618 框架層5分別圍繞該等透光膠體4f，以使得每一個透光 .膠體4 f形成複數個相對應該尊發光二極體晶片3 '之投光 ' 面4 (T (S308 )。再者，每一個發光二極體晶片3 '係為一 ^ 可產生白光之發光二極體晶片組（例如由紅色、綠色、藍 色三種發光二極體晶片所組合而成之發光二極體晶片 組），並且每一個透光膠體4 '係可為一透明矽膠或透明環 氧樹脂。所以，本創作之第二實施例與第一實施例最大的 -不同在於：於第二實施例中，由於每一個發光二極體晶片 / 係為一可產生白光之發光二極體晶片組（例如由紅 • 色、綠色、藍色三種發光二極體晶片所組合而成之發光二 極體晶片組），所以該等透光膠體4喺可為透明的。 因此，由第三A圖配合第三B圖可知，本創作第二實 施例係提供一種具有高效率散熱基板之發光二極體晶片 封裝結構，其包括：一基板單元1、一黏著膠體2、複數 個發光二極體晶片：T、複數個透光膠體4〜及複數個框 架層5。該基板單元1係具有一正極導電基板1 0、一負 極導電基板1 1、及至少一設置於該正極導電基板1 0及 Φ 該負極導電基板1 1之間之架橋基板1 2。該黏著膠體2 係填充於該正極導電基板10、該負極導電基板1 1及該 架橋基板12之間，以連結並固定該正極導電基板1 0、 ' 該負極導電基板1 1及該架橋基板1 2在一起。該等發光 - 二極體晶片3 '係分別設置於該架橋基板1 2上’並且該 • 等發光二極體晶片3'係電性連接於該正極導電基板1 0 • 與該負極導電基板1 1之間。該等透先膠體4"係分別覆 蓋於該等發光二極體晶片：T上。該等框架層5係分別圍 繞該等透光膠體47 ,以使得每一個透光膠體4 f形成複數 M342618 個相對應料發光二極體晶片3,之投光面4 Q,。 請麥閱第四圖.所示，.一第一個發 具有一正極端(+)及-二 極端(-)v=:)2bi、下兩端係具有-負 3 3 b的卜 …弟三個發光二極體晶片 (二）上、下兩端係具有一正極端（+ )及一負極端 於-Ϊί嚴該第；個發光二極體晶片3 1 Μ電性地設置 第一^^士113之一第一架橋基板12 lb上，並且該Conductive substrate soil i; early; Γ 1 system? A positive electrode conductive substrate 10, a negative electrode, a negative electrode, a conductive device, and a bridge substrate 12 disposed between the positive electrode conductive substrate Γ0 and the 埴2. The adhesive body 2 is vibrating, the positive electrode is electrically connected to the substrate 10, the negative conductive substrate 1 and the bridged earth plate are connected to each other to connect and fix the positive D negative electrode conductive substrate U and the bridge substrate 12 ^基=^光的, the bulk wafer 3 is respectively disposed on the bridging substrate 12, and the light is emitted between the two θ H f. The photo-colloid 4 is covered by the light ^: ^, respectively. The frame layers 5 are divided into _^^ 4 so that the mother-slael colloids 4 form a plurality of light-emitting surfaces 4 of the dedicated light-emitting diode chip 3. Referring to the third A diagram and the third B diagram, the steps of the second embodiment (which can be regarded as steps S300 to S304) are the first to be the same as i, S200 to the same. For the steps of the example, please refer to the third A and third B. After the step S304 of the second embodiment, the further step includes: covering a plurality of transparent colloids on the LEDs 3, respectively. Upper (S3〇6); finally, the light-transmitting colloids 4f are respectively surrounded by a plurality of M342618 frame layers 5, so that each of the light-transmitting colloids 4f forms a plurality of corresponding light-emitting diode chips 3' Light 'face 4 (T (S308). Further, each of the light-emitting diode chips 3' is a light-emitting diode chip set capable of generating white light (for example, three kinds of light-emitting diodes of red, green, and blue) a light-emitting diode chip set in which the wafers are combined, and each of the light-transmitting colloids 4' may be a transparent silicone or a transparent epoxy resin. Therefore, the second embodiment of the present invention is the largest of the first embodiment. - the difference is that in the second embodiment, each of the LED chips is a light-emitting diode chip group capable of generating white light (for example, three kinds of light-emitting diode chips of red, green, and blue) The combined light-emitting diode chip set), so The photo-colloid 4 喺 can be transparent. Therefore, the third embodiment of the present invention is related to the third B-picture. The second embodiment of the present invention provides a light-emitting diode package structure having a high-efficiency heat-dissipating substrate, which includes: The substrate unit 1, an adhesive body 2, a plurality of light emitting diode chips: T, a plurality of transparent colloids 4~ and a plurality of frame layers 5. The substrate unit 1 has a positive conductive substrate 10 and a negative conductive substrate. 1 and at least one bridging substrate 12 disposed between the positive conductive substrate 10 and the negative conductive substrate 1 1. The adhesive 2 is filled in the positive conductive substrate 10, the negative conductive substrate 1 and The positive electrode conductive substrate 10, 'the negative conductive substrate 1 1 and the bridge substrate 12 are connected and fixed between the bridge substrates 12. The light-emitting diodes 3' are respectively disposed on the bridge. The light-emitting diode chip 3' is electrically connected between the positive electrode conductive substrate 10 and the negative electrode conductive substrate 1 1. The first colloidal bodies 4" are respectively covered by the substrate Equal-emitting diode chip: on T The frame layers 5 respectively surround the light-transmitting colloids 47 such that each of the light-transmitting colloids 4 f forms a plurality of M342618 corresponding light-emitting diode chips 3, and the light-emitting surface 4 Q, please In the four diagrams, the first one has a positive terminal (+) and a second terminal (-) v=:) 2bi, and the lower two ends have a negative 3 3 b. The upper and lower ends of the polar body wafer (2) have a positive terminal (+) and a negative terminal at - the first; the second LED chip 3 1 is electrically disposed first. a first bridge substrate 12 lb, and the
h v币il —極體晶片3 1 b之正極端係透過一導線W b’H/1 該基板單元1 正極導電基板10 連接於兮宾x力光一極體晶片31b之負極端係直接電性 逆接於該弟-架橋基板1 2 1 b。 於該美1卜，第1—個發光二極體晶片3 2 b係電性地設置 -極卿日Η。。 橋基板121 b，該第二個發光 ;i:r22b2,之正極购 於該^單該第λ個發極體日日日片3 3、細生地設置 三=3早;01 b之—負極導電基板lib上，並且該第 :電片加 極體曰曰片？ = /卞橋基板12 2 b，該第三個發光二 基板『丄b。之、極端係直接電性連接於該負極導電 11 M342618 f續第五圖所示，一第一個發光二極體晶片3工c 二個ίΐ係具有—正極端（+ )及—負極端（―)。一第 '、-極體晶片3 2 C的上表面係具有一負極端 Γ —正極端（+ )。—第三個發光二極體晶片3 3 勺表面係具有—正極端（+ )及一負極端（一）。 再者’該第-個發光二極體晶片3工c係設置於一基 蘇C之一第一架橋基板1 2 1 c上，並且該第一個Hv coin il — the positive electrode end of the polar body chip 3 1 b is transmitted through a wire W b 'H/1. The substrate unit 1 The positive electrode conductive substrate 10 is connected to the negative electrode end of the x x 力 力 力 一 一 一 31 31 31 31 31 31 On the brother-bridge substrate 1 2 1 b. In the US, the first light-emitting diode chip 3 2 b is electrically provided - extremely fine. . The bridge substrate 121 b, the second light emitting; i: r22b2, the positive electrode is purchased from the single λ electrode body day and day piece 3 3 , the finely set three = 3 early; 01 b - the negative electrode is conductive On the substrate lib, and the first: the film plus the polar body? = / 卞 bridge substrate 12 2 b, the third illuminating two substrate "丄b. The extreme is directly electrically connected to the negative electrode. 11 M342618 f. As shown in the fifth figure, a first light-emitting diode chip has two positive electrodes (+) and a negative terminal ( ―). The upper surface of a 'th-pole wafer 3 2 C has a negative terminal Γ - a positive terminal (+ ). - The surface of the third LED chip has a positive terminal (+) and a negative terminal (one). Further, the first light-emitting diode chip is disposed on one of the first bridge substrates 1 2 1 c of a base C, and the first one
r以命f版日日片3 1 C之正、負極端係分別透過兩導線W ^連接於該基板單元1 c之一正極導雷臬；η c及該第-嶋板121〇 私電基板10 杯》^ 外該第一個發光二極體晶片3 2 c係設置於一基 = 之一第二架橋基板12 2 c上，並且該第二個r is the positive and negative end of the Japanese version of the Japanese film 3 1 C, which is connected to the positive electrode lead of the substrate unit 1 c through two wires W ^; η c and the first plate 121 10 cups of the first light-emitting diode chip 3 2 c is disposed on a base = one of the second bridge substrates 12 2 c, and the second
C以帝日日片3 2 C之負、正極端係分別透過兩導線W 基板於該第—架橋基板121 c及該第二架橋 被星另f該第二個發光二極體晶片3 3 ^係設置於-基 光二:二以極導電气板11 c上，並且該第三個發 以電性、查：认3 3正、負極端係分別透過兩導線Wc 板！ j接於該第：㈣基板1 2 2 e及該負極導電基 的下圖所示’一第一個發光二極體晶片3 “ -:ί! 極端（+)及-負極端㈠。-第 體晶片32d的下表面係具有一負極： d的下。一第三個發光二極體晶片33 )下表面係具有一正極端⑴及一負極端㈠。 12 M342618 /再者’該第-個發光二極體晶片3工d之正、負極端 係分別透過兩錫球b以電性.連接於—基板單元^ d之一 正極導電基板1〇 d及-第一架橋基板丄2工d。此外， 該第二個發光二極體晶片3 2 d之負、正極端係分別透過 兩錫球bM性連接於該第—架橋基W 2〗d及該基 板單元1d之-第二架橋基板丄22d。另外，該第三個 發光-極體晶片3 3 d之正、負極端係分別透過兩錫球b 以電性連接於該第二架橋基板122d及該基板單元i d之一負極導電基板1工廿。 當然，上述該等發夯-托雕曰u 用以限定本創作。另外;片之電性連接方式係非 二極體晶片（圖未示的广需求’該等發光 . ”」之正、負極端係可以串聯 3 e 以 Ck :enal)、或串聯加並聯(parallel/serial) 的方與祕板單元（圖未 產生電性連接。 貝炫命包巷敬 綜上所述，本創作夕政μ -具有高導鱗質之μΙ赌w封裝結構係使用 劍成-正極導電基板f 2、土且該基板單元係直揍分 開且分別設置於該正極霉、甩基板、及複數個彼此分 之架橋基板。因此，複板及該負極導電基板之間 地設置於該基板單以/\光二歸晶#係可直接電性 過該基板單元以x使㈣等發光二極體晶片能透 再者，本創作係散熱效果。 COB)製程並利用壓桓,:·片直接封裝（Chip 0nB〇ard， 作π有效地縮短其製程^mold)白勺方式，則吏得本創 本創作之結構設計更適=，而能進行大量生產。此外， 用於各種光源，諸如背光模組、 M342618 飾燈條、照明用燈、或9搞 、 所應用之範圍與產㈣、源等應用，皆為本創作 惟，以上所述’僅為本創— •詳細說明與圖式，惟本創作之特徵二不柄具體實施例之 以限制本創作，本創作之所有^ 侷限於此’並非用 圍為準，凡合於本創作申圍應以下述之申請專利範 之貝_，皆應、包含於本創作之貝似又化 :蓋藝在者==二，思及之變化 i 【谓式簡單說明】 弟-A圖係為習知發光二極上 為第一 A圖之1B—1B=視圖’ f：E®^^D^2E^E^w； 日„作具有高效率散熱基板之發光二極體 第-Β 結構的第二實施例之立體示意圖，· f二圖之3β〜3Β剖面圖； 弟四圖高效率散熱基板之發光二極體晶 片^衣…構透過打線的方式達成電性連接之 種示意圖，· 第五圖係為本創作具有高效率散熱基板之發光二極體曰 片封裝結構制打線的方式達成電性賴之第: 14 M342618 種示意圖；以及 第/、圖料摘作具有高效率賴基板之發光二極體晶 片封裝結構透過覆晶的方式達成電性連接之示音 圖0 ^ 【主要元件符號說明】 [習知] 條狀基板本體 1 發光二極體晶片 螢光膠體 不透光框架層. [本創作] 基板單元 黏著膠體 發光二極體晶片 3 發光二極體晶片 3, 螢光膠體 4 透光膠體 4, 框架層 $ 第一個發光二極體晶片C is the negative of the 3D C of the Di Ri Ri 3 and the positive end is respectively transmitted through the two wires W substrate on the first bridge substrate 121 c and the second bridge is the star of the second LED chip 3 3 ^ The system is disposed on the base light two: two on the pole conductive gas plate 11 c, and the third one is electrically connected, and the negative end is respectively transmitted through the two wires Wc plate! j is connected to the first: (4) the substrate 1 2 2 e and the negative electrode conductive base shown in the following figure 'a first light-emitting diode chip 3' -: ί! Extreme (+) and - negative terminal (1). - The lower surface of the bulk wafer 32d has a negative electrode: d. The lower surface of a third LED substrate 33 has a positive terminal (1) and a negative terminal (1). 12 M342618 / again 'the first one The positive and negative ends of the light-emitting diode wafer 3 are respectively electrically connected to the positive electrode conductive substrate 1〇d and the first bridge substrate d2 through the two solder balls b. In addition, the negative and positive terminals of the second LED chip 32 d are respectively connected to the first bridging base W 2 d and the second bridging substrate of the substrate unit 1 d through two solder balls. In addition, the positive and negative ends of the third illuminator-electrode wafer 3 3 d are electrically connected to the second bridging substrate 122d and one of the substrate unit id of the negative electrode conductive substrate 1 through the two solder balls b, respectively. Of course, the above-mentioned hairpins are used to define the creation. In addition, the electrical connection of the sheets is a non-diode wafer (Fig. The wide demand 'the luminescence. 》" positive and negative ends can be connected in series 3 e to Ck : enal), or in series and parallel (parallel / serial) square and secret board unit (the figure does not produce electrical connection. According to the above, the creation of Xizheng μ - has a high-conductivity squamous μ Ι w package structure using the sword-positive conductive substrate f 2, the substrate and the substrate unit are separated and set separately The positive electrode mold, the ruthenium substrate, and a plurality of bridge substrates which are separated from each other. Therefore, the double plate and the negative electrode conductive substrate are disposed on the substrate, and the light is directly passed through the substrate unit. In order to make the (four) and other light-emitting diode chips transparent, the creation system is used for heat dissipation. COB) process and use of compression,: · Chip direct packaging (Chip 0nB〇ard, π effectively shortens its process ^mold) In this way, the structure design of this creation is more suitable, and it can be mass produced. In addition, for various light sources, such as backlight modules, M342618 lighting strips, lighting lights, or 9 applications, the scope of application and production (four), source and other applications, are the only creations, the above mentioned only for this Creativity - • Detailed description and schema, but the characteristics of this creation are not specific to the specific examples to limit the creation, all of the creations of this creation are limited to this, which is not subject to the scope of the creation. The application for the patent Fan Fan _, all should be included in the creation of the shell and the like: cover art in the == two, think of the change i [predicate simple description] brother - A picture is the familiar light two The first embodiment is 1B-1B=view 'f:E®^^D^2E^E^w; the second embodiment of the light-emitting diode first-Β structure having a highly efficient heat-dissipating substrate 3D to 3Β cross-sectional view of the f-picture; the light-emitting diode chip of the high-efficiency heat-dissipating substrate of the four-figure diagram of the brothers, the structure of the electrical connection is achieved by means of wire bonding, and the fifth figure is Create a light-emitting diode package structure with high-efficiency heat-dissipating substrate to achieve wire bonding Lai Zhidi: 14 M342618 kinds of schematic diagrams; and the /, the picture material is extracted as a high-efficiency light-emitting diode package structure of the substrate through the flip-chip way to achieve electrical connection of the sound map 0 ^ [main symbol description 】 [General] strip substrate body 1 light-emitting diode wafer fluorescent colloid opaque frame layer. [This creation] substrate unit adhesive colloidal light-emitting diode chip 3 light-emitting diode chip 3, fluorescent colloid 4 Photocolloid 4, frame layer $ first LED chip
絕緣本體 散熱層 正極導電軌跡 負極導電執跡 正極端 負極端 投光面 正極導電基板 負極導電基板 架橋基板 投光面 投光面 3 1b 1 0 a 1 1 a 1 2 a 13 aInsulating body Heat sink Layer Positive conductive track Negative electrode conductive trace Positive pole Negative end Projection surface Positive conductive substrate Negative conductive substrate Bridge substrate Projection surface Projection surface 3 1b 1 0 a 1 1 a 1 2 a 13 a
15 M342618 第二個發光二極體晶片 第三個發光二極體晶片 基板單元 - 正極導電基板 負極導電基板 第一架橋基板 第二架橋基板 - 導線 第一個發光二極體晶片 _ 第二個發光二極體晶片 第三個發光二極體晶片 基板單元 正極導電基板 負極導電基板 第一架橋基板 第二架橋基板 導線 Φ 第一個發光二極體晶片 第二個發光二極體晶片 第三個發光二極體晶片 基板單元 . 正極導電基板 . 負極導電基板 第一架橋基板 第二架橋基板 錫球 b b c c d d b b b b 1 2 ccc c c 1 2 d d d d d 1 2 2 3bol22bl 23 col 2 2 c 1 2 3 d o 1 2 2 oo oo IX IX IX IX 1± w- oo oo oo ^~i t-h t—i τ—ι τ—~ oo oo ηύ 1± 1± 1± 1± 1± b 1615 M342618 Second Light Emitting Diode Wafer Third Light Emitting Diode Wafer Substrate Unit - Positive Conductive Substrate Negative Conductive Substrate First Bridge Substrate Second Bridging Substrate - Conductor First Light Emitting Diode Wafer _ Second Illumination Diode wafer third LED substrate unit positive electrode substrate negative electrode conductive substrate first bridge substrate second bridge substrate wire Φ first light-emitting diode chip second light-emitting diode chip third light Diode wafer substrate unit. Positive electrode conductive substrate. Negative electrode conductive substrate First bridge substrate Second bridge substrate Tin ball bbccddbbbb 1 2 ccc cc 1 2 ddddd 1 2 2 3bol22bl 23 col 2 2 c 1 2 3 do 1 2 2 oo oo IX IX IX IX 1± w- oo oo oo ^~i th t—i τ—ι τ—~ oo oo ηύ 1± 1± 1± 1± 1± b 16