TW200905912A - Light emitting diode packaging structure and manufacturing method thereof - Google Patents

Light emitting diode packaging structure and manufacturing method thereof Download PDF

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Publication number
TW200905912A
TW200905912A TW96126839A TW96126839A TW200905912A TW 200905912 A TW200905912 A TW 200905912A TW 96126839 A TW96126839 A TW 96126839A TW 96126839 A TW96126839 A TW 96126839A TW 200905912 A TW200905912 A TW 200905912A
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Taiwan
Prior art keywords
package
emitting diode
light emitting
recess
light
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TW96126839A
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Chinese (zh)
Inventor
Kuo-Yuin Li
Hsiang-Chih Shih
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Chi Mei Lighting Tech Corp
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Priority to TW96126839A priority Critical patent/TW200905912A/en
Publication of TW200905912A publication Critical patent/TW200905912A/en

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Abstract

A light emitting diode packaging structure and a manufacturing method thereof are disclosed. The manufacturing method comprises: providing a packaging base, wherein two electrode contacts are embedded in the packaging base; mounting a light emitting diode chip in the packaging base, wherein the light emitting diode chip is electrically connected to the electrode contacts; and forming a package body on the packaging base, thereby achieving the light emitting diode packaging structure.

Description

200905912 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種發光二極體封裝結構及其製造方 - 法’且特別是有關於具有結合凹部之發光二極體封裝結構及 其製造方法。 【先前技術】 發光二極體(Light Emitting Diode; LED)具有工作電壓 f、 低,耗電量小,發光效率高,反應時間短,光色純,結構牢 固,抗衝擊,耐振動,性能穩定可靠,重量輕,體積小及成 本低等特點。隨著技術的進步,LED可展現的亮度等級越來 越尚,其應用領域也越來越廣泛,例如:大面積圖文顯示全 彩屏,狀態指示、標誌照明、信號顯示、液晶顯示器的背光 源或車内照明。 S知的LED係以金屬導電支架(Lead Frame)配合塑料射 出成形方式製作出封裝基座。導電支架係用以電性連接lED 曰曰片之電極封裝基座係以射出成形方式形成,藉以使封裝 材料包覆及固定住導電支架。封裝基座内形成一凹口區域用 以放置LED晶片。在LED晶片置入封裝基座内後,接著, 填入一透明封裝材料(例如環氧樹脂)於封裝基座内,並結合 光學透鏡於封裝基座上,以提高發光效率。 然而,習知LED封裝結構中,由於光學透鏡和封裝基座 係個别進行製造,再結合成一體。因此,當進行封裝時,光 千透鏡必須個別地組裝於封裝基座上,而影響整體生產效率 和速度。再者,光學透鏡係藉由黏著材料來結合於封裝基座 200905912 上因而增加led封裝結構中的介200905912 IX. Description of the Invention: [Technical Field] The present invention relates to a light emitting diode package structure and a method for fabricating the same, and more particularly to a light emitting diode package structure having a bonding recess and manufacturing thereof method. [Prior Art] Light Emitting Diode (LED) has a working voltage f, low, low power consumption, high luminous efficiency, short reaction time, pure light color, firm structure, impact resistance, vibration resistance and stable performance. Reliable, light weight, small size and low cost. With the advancement of technology, LEDs can display more and more brightness levels, and their application fields are more and more extensive, such as: large-area graphic display full color screen, status indication, logo illumination, signal display, backlight of liquid crystal display Or interior lighting. The known LEDs are fabricated by a metal conductive bracket (Lead Frame) in combination with a plastic injection molding method. The conductive support is formed by an injection molding method for electrically connecting the electrode package base of the lED film, so that the package material covers and fixes the conductive support. A recessed region is formed in the package base for placing the LED wafer. After the LED chip is placed in the package base, a transparent encapsulating material (such as epoxy) is then filled in the package base and combined with the optical lens on the package base to improve luminous efficiency. However, in the conventional LED package structure, since the optical lens and the package base are separately manufactured, they are integrated into one. Therefore, when packaged, the lens must be individually assembled on the package base, affecting overall productivity and speed. Furthermore, the optical lens is bonded to the package base 200905912 by an adhesive material, thereby increasing the dielectric in the LED package structure.

ΛΑ ^ 4, ., 的&quot;質和介面,而降低LED 的發先效率。另外,當黏著材料 人 則容易由封f美座上钊&amp; eQ 蚪,光學透鏡 展基座上^,因而影響製程良率。 【發明内容】 結構因Ϊ本^之—方面係在於提供—種發光二極體封裝 。錯以’、略設置光學透鏡,並形成穩固的結合結構。 構的製又—方面係在於提供—種發光:極體封裝結 構的製造方法’藉以簡化製師驟,並提升生產效率。 =據本發明之實施例,本發明之發光二極體封裝結構至 有封裝基座、電極接點、發光二極體晶片及封膠體。 =裝基座設有凹陷部和至少—結合凹部,其中結合凹部呈有 導流結構’料通至㈣部。電極接點係㈣於封裝基座 發光二極體晶片係設置於凹陷部内’並與電極接點形成 電性連接,封㈣係包覆並㈣此些電極接師發光二極體 晶片’其中封膠體係至少包覆至封裝基座的結合凹部,且封 膠體具有至少-光學透鏡結構,其係對應於發光二極體 來設置。 又,根據本發明之實施例,本發明之發光二極體封裝結 構的製造方法至少包含··提供封裝基座,其巾封裝基座設有 ^部和結合凹部,結合㈣具有—導流結構,以連通至凹 陷部’且封裝基座内建有電極接點;設置發光二極體晶片於 封裝基座的凹陷部内,並與電極接點形成電性連接;以及形 成封膠體於封裝基座上,用以包覆並密封電極接點和發光二 極體晶片’其中封膠體係至少包覆至封裝基座的結合凹部, 200905912 且封膠體具有光學透鏡結構,其係對應於發光二極體 士η» m. · e又置。 又,根據本發明之實施例,本發明之發光二極體封裝結 構的製造方法至少包含:提供封I基座陣列,其中封裝基座 陣列係由複數個封裝基座所組成,每—此些封裝基座設有凹 陷部和結合凹m凹部具有一導流結構,以連通至凹陷 邛且每&amp;些封裝基座内建有電極接點;設置發光二極體 晶片於每—此些封裝基座的凹陷部内,並與此些電極接點形 成電性連接;形成封膠體於封裝基座陣列上,用以包覆並密 封每-此些封裝基座中的電極接點和發光二極體晶片,盆中 封膠體係至少包覆至每一此些封裝基座的結合凹部,且封膠 體具有複數個光學透鏡結構,其係對應於每—此些封裝基座 中的發光二極體晶片來設置;以及對封裝基座陣列和封膠體 進行-分割步驟,以形成複數個發光二極體封裝結構。 、因此’本發明之發光二極體封裝結構可藉由封膠體來一 體成型光學透鏡結構,並藉由結合凹部來穩固地結合於封带 基座上,以省略設置光學透鏡,並形成穩固的結合結構,增 加封裝結構強度’因而可簡化製程,且提升生產效率和製程 良率。 【實施方式】 為讓本發明之上述和其他目的、特徵、優點與實施例能 更明顯易懂,本說明書將特舉出—系列實施例來加以說明。 但值得注意的是,此些實施例只是用以說明本發明之實施方 式’而非用以限定本發明。 200905912 —:第1圖和第2圖’帛1圖係繪示依照本發明之第 —貫丨之發光_極體封裝結構的剖面示意圖,第2圖係綠 =照本發明之第—實施例之發光二極體封裝結構的立體 不意圖。本實施例之發光二極體封裝結構1GG包含有封裝λ -座110/電極接點120、發光二極體晶片uo、封膠體【仙二 散熱單元150。電極接•點12(M系内建於封裝基座ιι〇中,發 光二極體晶片130係設置於封裝基座m中,並與電極接點 120形成電性連接,封膠體刚係用以包覆並密封住電極接 ( 點120和發光二極體晶片130,其中封膝體14〇具有光學透 鏡結構141,其係對應於發光二極體晶片130來設置,用以 提升發^效率。散熱單元15〇係設置於封裝基座ιι〇中,用 以使熱量由本實施例之發光二極體封裝結構1〇〇導出外界, 避免影響發光二極體晶片130的發光效率。 如第1圖和第2圖所示’本實施例之封裝基座11〇的材 料例如為:環氧樹脂 '玻璃纖維、聚_鄰_苯二甲醯胺(ppA)、 氮化删、IUIlIs、氧化ls或㈣等絕緣材f,且較佳為具有 (ί 請導熱性的材料,例如:氮化删、1化紹、氧化銘、陶£ 或上述之任意組合,藉以提升散熱效果。封裝基座110的製 造方式例如可為:射出成型或共燒成型(當例如使用陶瓷材料 時)。封裝基座110設有凹陷部11丨和結合凹部i丨2,凹陷部 111例如係呈圓杯形凹陷結構,用以設置發光二極體晶片 130’並使發光二極體晶片13〇的發光可由凹陷部的開口 來發出。其令凹陷部1U的表面可塗佈一高反射率材料 111a ’例如:Ag、A1、Au、Ti〇2、Si〇2或上述之任意組合, 藉以增加凹陷部111的表面反射率,因而可反射大部分的側 200905912 向光’減少發光二極體13G在側向出光方面的發光耗損。結 ::部11:係用以提升封膠體14〇與封裝基i ιι〇之間的結 «此力藉以使封膠體14G與封裝基座UG形成穩固的結合 •結構。在本實施例中,結合凹部112例如係開設;^封裳基座 的上表面,且較佳係呈勾槽結構(例如呈倒T形勾槽結 構)藉以使封膠體140可填充入結合凹冑112巾,而形成穩 固的結合結構。其中,結合凹部112可具有導流結構,在: 實_中’結合凹部112係連通於封裝基座11G的外側面和 Γ 凹陷部ill之間’藉以t形成封膠體14G於封裝基座⑽上, 封膠體140的材料可由結合凹部112來導入凹陷部⑴中, 以包覆並密封住電極接點12〇和發光二極體晶片13〇。 如第1圖所示,本實施例之電極接點120係内建於封裝 土座110中,並與發光二極體晶片i 3〇形成電性連接,例如 利用焊線、共晶焊接或表面黏著(SMD)的方式來形成電性連 接藉以接出發光二極體晶片130的電極來對外連接至例 如·印刷電路板或電路基板。舉例而言,電極接點12〇可以 、 係形成於封裝基座中的電路層(未繪示)上,並配合導電 通孔和導電膏來電性連接至印刷電路板(未繪示)。又,例如 電極接點120亦可以係導電支架(例如係以金屬板材所沖壓 形成)的電極接腳,用以使發光二極體晶片13〇可對外形成電 性連接。 如第1圖所示,本實施例之發光二極體晶片13〇例如係 高功率的發光二極體,其設置於凹陷部U1的底部,而與電 極接點120形成電性連接,並藉由凹陷部U1的開口來出光。 發光二極體晶片丨30可直接設置於凹陷部lu的底部,亦可 200905912 以覆晶(Flip Chip)的方式來設置,以提升發光二極體晶片13 〇 的發光效率。另外,發光二極體晶片13〇可設有螢光層131, 其形成於發光二極體晶片130的表面上,藉以達到混光效 - 果,可形成例如白光發光二極體。 如第1圖所示,本實施例之封膠體140的材質例如為: 環氧樹脂、ΡΜΜΑ、聚碳酸酯(P〇iycarb〇nate)或矽膠,用以包 覆並密封電極接點120和發光二極體晶片13〇,並穩固電極 接點120和發光二極體晶片130的電性連接結構。在本實施 例中,封膠體140係利用模鑄的方式來一體成型於封裝基座 110上,並至少包覆於封裝基座110的結合凹部112,藉以使 封膠體140和封裝基座110形成穩固的結合結構。且封膠體 140具有光學透鏡結構141,其係藉由模鑄的方式來一體成 型,並對應於發光二極體晶片13〇,藉以提升發光二極體晶 片130的光學效果,例如提升發光二極體晶片13〇的正向出 光效果。光學透鏡結構141例如係呈凸透鏡、凹錐透鏡、球 鏡、菲涅爾透鏡或組合式透鏡結構。由於封膠體14〇本身具 〇 有光學透鏡結構141 ’因此本實施例之發光二極體封裝結構 1〇〇可無需再加裝光學透鏡,藉以提升生產效率,節省光學 透鏡的設置成本。 如第1圖所示,本實施例之散熱單元150係以具有良導 熱率的材料(例如:銘、銅或陶曼)所製成散熱片、散熱塊、 散熱基板或散熱鰭片,其例如係設置於封裝基座ιι〇的底 部,且較佳係直接接觸於發光二極體晶片13(),藉以傳導發 光二極體W 130的熱量至外界’減少元件的熱阻抗。林 實施例中,電極接點120與散熱單元15〇可未形成連接,藉 200905912 以分離電和熱的傳導路捏, 片130的工作效率。 因而可進—步確保發光 極體ΛΑ ^ 4, ., &quot;Quality and interface, while reducing the efficiency of LEDs. In addition, when the adhesive material is used, it is easy to be used by the 美 钊 &amp; eQ 蚪, the optical lens is on the pedestal, thus affecting the process yield. SUMMARY OF THE INVENTION The structure of the structure is based on the provision of a light-emitting diode package. Wrong, the optical lens is slightly set, and a stable bonding structure is formed. The structure is also based on the provision of a kind of illumination: the manufacturing method of the polar package structure, which simplifies the manufacturing process and improves production efficiency. According to an embodiment of the present invention, the light emitting diode package structure of the present invention has a package base, an electrode contact, a light emitting diode wafer, and a sealant. The mounting base is provided with a recess and at least a coupling recess, wherein the coupling recess has a flow guiding structure & is passed to the (four) portion. The electrode contact system (4) is disposed in the recessed portion of the package pedestal light-emitting diode chip and electrically connected to the electrode contact, and the sealing (4) is coated and (4) the electrode is connected to the light-emitting diode chip. The glue system covers at least the bonding recess of the package base, and the sealant has at least an optical lens structure that is disposed corresponding to the light emitting diode. Moreover, according to an embodiment of the present invention, a method for fabricating a light emitting diode package structure of the present invention at least includes providing a package base, the towel package base having a portion and a coupling recess, and (4) having a flow guiding structure Connected to the recessed portion' and the electrode base is built in the package base; the light-emitting diode chip is disposed in the recessed portion of the package base, and is electrically connected with the electrode contact; and the sealant is formed on the package base And a bonding recess for covering and sealing the electrode contact and the light emitting diode chip, wherein the sealing system is at least coated to the package base, 200905912, and the sealing body has an optical lens structure corresponding to the light emitting diode士η» m. · e again. Moreover, in accordance with an embodiment of the present invention, a method of fabricating a light emitting diode package structure according to the present invention includes at least providing an array of packaged pedestals, wherein the package pedestal array is composed of a plurality of package pedestals, each of which The package base is provided with a recessed portion and the recessed portion of the recessed recess has a flow guiding structure for communicating to the recessed dome and each of the package bases has an electrode contact therein; and the light emitting diode chip is disposed in each of the packages a recessed portion of the pedestal and electrically connected to the electrode contacts; forming a sealant on the package pedestal array for covering and sealing the electrode contacts and the light emitting diodes in each of the package pedestals The body wafer, the potting sealing system covers at least the bonding recess of each of the package bases, and the sealing body has a plurality of optical lens structures corresponding to the light emitting diodes in each of the package bases The wafer is disposed; and the package base array and the encapsulant are subjected to a dividing step to form a plurality of light emitting diode packages. Therefore, the light-emitting diode package structure of the present invention can integrally form an optical lens structure by an encapsulant, and is firmly bonded to the tape base by combining the recesses, thereby omitting the optical lens and forming a stable shape. Combined with the structure, the strength of the package structure is increased', which simplifies the process and improves production efficiency and process yield. The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; It is to be understood that the embodiments are merely illustrative of the invention and are not intended to limit the invention. 200905912—: FIG. 1 and FIG. 2 '帛1 diagram showing a cross-sectional view of a light-emitting body package structure according to the first aspect of the present invention, and FIG. 2 is a green color according to the first embodiment of the present invention. The stereoscopic structure of the LED package structure is not intended. The light emitting diode package structure 1GG of the present embodiment includes a package λ-seat 110/electrode contact 120, a light-emitting diode wafer uo, and a sealant body. The electrode connection point 12 (the M system is built in the package base ιι, the light-emitting diode chip 130 is disposed in the package base m, and is electrically connected with the electrode contact 120, and the sealant is used for The electrode contacts (points 120 and LEDs 130) are coated and sealed, wherein the enclosing body 14 has an optical lens structure 141 which is disposed corresponding to the LED chip 130 for improving the efficiency. The heat dissipating unit 15 is disposed in the package base , , , , , , , , , , 〇〇 〇〇 〇〇 〇〇 〇〇 〇〇 〇〇 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 And the material of the package base 11A of the present embodiment shown in FIG. 2 is, for example, epoxy resin, glass fiber, poly-o-phthalamide (ppA), nitriding, IUIlIs, oxidized ls or (4) The insulating material f, and preferably has a material of thermal conductivity, for example, nitriding, oxidizing, oxidizing, or any combination thereof, thereby improving the heat dissipation effect. The manufacturing method can be, for example, injection molding or co-firing (when for example In the case of a ceramic material, the package base 110 is provided with a recess 11 丨 and a coupling recess i 丨 2, and the recess 111 is, for example, a cup-shaped recessed structure for arranging the light-emitting diode chip 130 ′ and enabling the light-emitting diode The light emission of the wafer 13 can be emitted by the opening of the depressed portion, so that the surface of the depressed portion 1U can be coated with a high reflectivity material 111a 'eg, Ag, A1, Au, Ti〇2, Si〇2, or any combination thereof. In order to increase the surface reflectance of the depressed portion 111, the majority of the side 200905912 can be reflected to reduce the illuminating loss of the light-emitting diode 13G in the lateral light output. Junction: Part 11: used to lift the sealant 14 The junction between the crucible and the package base i ιι〇 is used to form a stable joint structure of the encapsulant 14G and the package base UG. In the present embodiment, the coupling recess 112 is opened, for example; The upper surface, and preferably a hook-and-groove structure (for example, an inverted T-shaped groove structure), allows the sealant 140 to be filled into the joint recess 112 to form a stable joint structure. The joint recess 112 can have a guide. Flow structure, in: _ _ 'in combination with recess 1 12 is connected between the outer side surface of the package base 11G and the 凹陷 recess ill ′ to form the sealant 14G on the package base (10) by t, and the material of the sealant 140 can be introduced into the recess (1) by the joint recess 112 to package The electrode contact 12A and the LED substrate 13 are covered and sealed. As shown in FIG. 1, the electrode contact 120 of the embodiment is built in the package earth 110 and is printed with the LED chip. i 3 〇 forming an electrical connection, for example, by wire bonding, eutectic soldering or surface adhesion (SMD) to form an electrical connection to take out the electrodes of the light emitting diode chip 130 for external connection to, for example, a printed circuit board or circuit Substrate. For example, the electrode contacts 12 can be formed on a circuit layer (not shown) in the package base, and electrically connected to the printed circuit board (not shown) with the conductive vias and the conductive paste. Further, for example, the electrode contact 120 may be an electrode pin of a conductive support (for example, formed by stamping a metal plate) for electrically connecting the light-emitting diode chip 13 to the outside. As shown in FIG. 1 , the light-emitting diode chip 13 of the present embodiment is, for example, a high-power light-emitting diode, which is disposed at the bottom of the recess U1 and electrically connected to the electrode contact 120. Light is emitted from the opening of the recess U1. The LED wafer 30 can be directly disposed at the bottom of the recess lu, or can be placed in a flip chip manner to improve the luminous efficiency of the LED chip 13 . In addition, the light-emitting diode chip 13 can be provided with a phosphor layer 131 formed on the surface of the light-emitting diode wafer 130 to achieve a light-mixing effect, for example, a white light-emitting diode can be formed. As shown in FIG. 1 , the material of the encapsulant 140 of the present embodiment is, for example, epoxy resin, tantalum, polycarbonate or silicone rubber for covering and sealing the electrode contacts 120 and the light. The diode chip is 13 turns and the electrical connection structure of the electrode contact 120 and the LED chip 130 is stabilized. In this embodiment, the encapsulant 140 is integrally molded on the package base 110 by a die-casting method, and is at least covered on the coupling recess 112 of the package base 110, so that the encapsulant 140 and the package base 110 are formed. A solid combination of structures. The encapsulant 140 has an optical lens structure 141 which is integrally molded by molding and corresponds to the LED chip 13 to improve the optical effect of the LED chip 130, for example, to enhance the LED. The positive light output effect of the body wafer 13〇. The optical lens structure 141 is, for example, a convex lens, a concave conical lens, a spherical mirror, a Fresnel lens, or a combined lens structure. Since the encapsulant 14 〇 itself has the optical lens structure 141 ′, the illuminating diode package structure of the embodiment can eliminate the need for an optical lens, thereby improving production efficiency and saving the installation cost of the optical lens. As shown in FIG. 1 , the heat dissipation unit 150 of the present embodiment is a heat sink, a heat dissipation block, a heat dissipation substrate or a heat dissipation fin made of a material having a good thermal conductivity (for example, Ming, Tong or Tao Man), for example, The system is disposed at the bottom of the package pedestal, and preferably directly contacts the illuminating diode chip 13 (), thereby conducting heat of the illuminating diode W 130 to the outside world to reduce the thermal impedance of the component. In the embodiment, the electrode contact 120 and the heat dissipating unit 15 may not be connected, and the operating efficiency of the sheet 130 is pinched by separating the electrical and thermal conduction paths by 200905912. Therefore, it is possible to further ensure the illuminating body

提供本實施例之發光二極體封裝結構1⑼時,首先, 棱供封裝基座110,此時,封首先 接荖,m 4 裝基座110⑽有電極接點120。 &amp;置發先二極體晶片130於封裝基IU0的凹陷部lu =部,並使發光二極體晶片⑽與電極接點12G形i電性 接。接者,形成-封膠體140於封裝基座110上, Γ中’封膠體14G係利用模鑄的方式來-體成型於封裝i 丄110上,並形成有光學透鏡結構⑷。封膠體140係至少 包覆於封裝基座110的結合凹部112。當形成封膠體140時, 封膠體140的材料可藉由結合凹部112㈣流結構來填入於 凹陷部111中,以包覆並密封住電極接點120和發光二極體 晶片130。在封膠體140完成後,封膠體14〇可藉由結合凹 部112來穩固地形成於封裝基座11〇上。 因此,本實施例之發光二極體封裝結構1〇()可藉由封裝 基座110的結合凹部112使封膠體140穩固地形成於封裝基 座110上’且由於封膠體14〇具有光學透鏡結構14ι,因而 可省略設置光學透鏡,藉以簡化製程和提升生產效率,並避 免光學透鏡脫落的情形。另外,由於光學透鏡結構14丨係一 體成型於發光二極體晶片130,因而在出光路徑上減少不必 要的介質或介面,進而提升發光二極體晶片130的發光效率。 請參照第3圖,其繪示依照本發明之第二實施例之發光 二極體封裝結構的俯視示意圖。以下僅就本實施例與第一實 施例之相異處進行說明,關於相似處在此不再贅述。相較於 第一實施例,第二實施例可同時製造複數個發光二極體封裝 11 200905912 結構100。當製造此些發光二極體封裝結構1〇〇時,首先, 提供-封裝基座陣列101a,其係由複數個封裝基座110a所 組成、,且此此封裝基座11Ga之結合凹部112a的導流結構係 -相互連通。接著,設置複數個發光二極體晶片13〇於此些封 裝基座UOa的凹陷部lu。接著,形成封膠體14〇於封裝基 座陣列101a上,此時,封膠體14〇的材料可藉由結合凹部 112a的導流結構來導入每一此此封裝基座ii〇a的凹陷部⑴ 中,並形成光學透鏡結構141於每一此此封裝基座上。 D 在形成封膠體ho後,接著,對封裝基座陣列1〇1進行一分 割步驟,藉以形成複數個發光二極體封裝結構1〇〇。因此, 第二實施例可同時製造複數個發光二極體封裝結構ι〇〇,而 方便進行量產,進一步提高效能。 凊參照第4圖和第5圖’其繪示依照本發明之第三實施 例之發光二極體封裝結構的俯視示意圖。以下僅京尤本實施例 與第一實施例之相異處進行說明,關於相似處在此不再贅 述。相較於第一實施例,第三實施例之封裝基座u〇b之凹陷 〇 •部lllb的開口形狀係呈長矩形或楕圓形、三角形或不規則 形,此時,發光二極體晶片13〇的發光可形成特定的形狀, 例如:長矩形或楕圓形、三角形或不規則形,並集中在特定 方向上,因而可適用於例如液晶顯示裝置(L c D)的側背光源。 請參照第6圖,其繪示依照本發明之第四實施例之發光 二極體封裝結構的立體示意圖。以下僅就本實施例與第一實 施例之相異處進行說明,關於相似處在此不再贅述。、相較二 第—實施例,第四實施例之封裝基座11〇的結合凹部u2c 進步凹設形成於凹陷部111的開口處,且具有導流結構。 12 200905912 因此,當形成封膠體140時,封膠體140的材料可填入凹陷 部111和結合凹部112c中,並形成光學透鏡結構141和穩固 的結合結構。 - 請參照第7圖至第9圖,第7圖係繪示依照本發明之第 . 五實施例之複數個發光二極體封裝結構的立體示意圖,第8 圖係繪示依照本發明之第五實施例之單一發光二極體封裝 結構的立體示意圖’第9圖係繪示依照本發明之第五實施例 之單一發光二極體封裝結構的剖面示意圖。以下僅就本實施 Γ4 例與第一實施例之相異處進行說明’關於相似處在此不再贅 述。相較於第二實施例,第五實施例之封裝基座110d的結合 凹部112d係凹設於封裝基座u〇d的外側面,當製造複數個 發光二極體封裝結構100時,首先,提供一封裝基座陣列 l〇ld,其係由複數個封裝基座110d所組成,且此此封裝基座 ll〇d之結合凹部112d的導流結構係相互連通。接著,設置 發光二極體晶片13〇。接著,形成封膠體14〇d於封裝基座陣 列l〇ld上,此時,封膠體14〇d的材料可藉由結合凹部112己 〇 的導流結構來導入每一此此封裝基座ll〇d的凹陷部111中, 並至少包覆於封裝基座11〇d的結合凹部U2d,藉以形成穩 固的結合結構。在形成封膠體140d後,接著,對封裝基座 陣列101d進行一分割步驟,藉以形成複數個發光二極體封 裝結構剛。值得注意的是,在第五實施例中,由於結合凹 郤U2d係5又置於封裝基座ll〇d的外側面,且封膠體i4〇d 具有光學透鏡結構141,因此封膠體14〇d係包覆於封裝基座 ll〇d的上側面和外側面。 第10圖’其緣示依照本發明之第六實施例之發 13 200905912 光二極體封裝結構的剖面示意圖。以下僅就本實施例與第一 貫施例之相異處進行說明,關於相似處在此不再贅述。相較 於第一實施例’第六實施例之封裝基座ll〇e的結合凹部112e 係形成於封裝基座11 〇e中,並連通於凹陷部111。因此,當 形成封膠體140時,封膠體140的材料可導入於凹陷部U1 中’並形成光學透鏡結構141和穩固的結合結構。 由上述本發明的實施例可知,本發明之發光二極體封裝 結構的封膠體可一體成型光學透鏡結構,並藉由結合凹部來 穩固地結合於封裝基座上。因此,本發明之發光二極體封裝 結構可省略設置光學透鏡,並形成穩固的結合結構,以增加 封裝結構強度,因而可簡化製程,且提升生產效率和製程良 率〇 雖然本發明已以實施例揭露如上,然其並非用以限定本 發明,任何熟習此技藝者,在不脫離本發明之精神和範圍 内,當可作各種之更動與潤飾,因此本發明之保護範圍當視 後附之申請專利範圍所界定者為準。 胃 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例能 更明顯易懂,所附圖式之詳細說明如下: 第1圖係繪示依照本發明之第—眘 裝結構的剖面示意圖。 實-例之發光二極體封 第2圖係㈣依照本發明之第—實施例之發光二極 政結構的立體示意圖。 二極體封 苐3圖係繪示依照本發明之楚_ 200905912 裝結構的俯視示意圖。 第4圖和第5圖係繪示依照本發明之第三實施例之發光 二極體封裝結構的俯視示意圖。 第6圖係繪示依照本發明之第四實施例之發光二極體封 裝結構的立體示意圖。 第7圖係繪示依照本發明之第五實施例之複數個發光二 極體封裝結構的立體示意圖。 第8圖係繪示依照本發明之第五實施例之單一發光二極 體封裝結構的立體示意圖。 第9圖係繪示依照本發明之第五實施例之單一發光二極 體封裝結構的剖面示意圖。 第10圖係繪示依照本發明之第六實施例之發光二極體 封裝結構的剖面示意圖。 【主要元件符號說明】When the light-emitting diode package structure 1 (9) of the present embodiment is provided, first, the pedestal 110 is packaged. At this time, the package is first connected, and the m 4 package base 110 (10) has electrode contacts 120. &amp; the first diode chip 130 is placed on the recess portion lu = portion of the package base IU0, and the light-emitting diode chip (10) is electrically connected to the electrode contact 12G. Then, the encapsulant 140 is formed on the package base 110, and the encapsulant 14G is formed on the package i 丄 110 by molding, and an optical lens structure (4) is formed. The encapsulant 140 is at least covered by the coupling recess 112 of the package base 110. When the encapsulant 140 is formed, the material of the encapsulant 140 can be filled in the recess 111 by the bonding recess 112 (four) flow structure to cover and seal the electrode contact 120 and the LED wafer 130. After the encapsulant 140 is completed, the encapsulant 14 can be firmly formed on the package base 11 by the bonding recess 112. Therefore, the LED package structure 1 of the present embodiment can form the encapsulant 140 firmly on the package base 110 by the bonding recess 112 of the package base 110 and has an optical lens due to the encapsulant 14 The structure 14i can be omitted, so that the optical lens can be omitted, thereby simplifying the process and improving the production efficiency, and avoiding the situation in which the optical lens is detached. In addition, since the optical lens structure 14 is integrally formed on the light-emitting diode wafer 130, an unnecessary medium or interface is reduced in the light-emitting path, thereby improving the light-emitting efficiency of the light-emitting diode wafer 130. Please refer to FIG. 3, which is a top plan view of a light emitting diode package structure according to a second embodiment of the present invention. In the following, only the differences between the embodiment and the first embodiment will be described, and the similarities will not be described herein. In contrast to the first embodiment, the second embodiment can simultaneously fabricate a plurality of light emitting diode packages 11 200905912 structures 100. When manufacturing the light emitting diode package structure 1 first, a package base array 101a is provided, which is composed of a plurality of package bases 110a, and the package recess 11a of the package base 11Ga is The flow guiding structures are interconnected. Next, a plurality of light-emitting diode chips 13 are disposed on the depressed portions lu of the package base UOa. Then, the encapsulant 14 is formed on the package base array 101a. At this time, the material of the encapsulant 14〇 can be introduced into the recess (1) of each of the package bases ii〇a by the flow guiding structure of the bonding recess 112a. And forming an optical lens structure 141 on each of the package bases. After forming the encapsulant ho, a step of dividing the package pedestal array 1 〇 1 is performed to form a plurality of illuminating diode packages 1 〇〇. Therefore, the second embodiment can simultaneously manufacture a plurality of light emitting diode package structures ι, which is convenient for mass production and further improves the performance. Referring to Figures 4 and 5, there is shown a top plan view of a light emitting diode package structure in accordance with a third embodiment of the present invention. In the following, only the differences between the embodiment of the present invention and the first embodiment will be described, and the similarities will not be described herein. Compared with the first embodiment, the opening shape of the recessed portion 11b of the package base u〇b of the third embodiment is a long rectangle or an elliptical circle, a triangle or an irregular shape. At this time, the light emitting diode The light emission of the wafer 13 can be formed into a specific shape, for example, a long rectangle or an elliptical circle, a triangle or an irregular shape, and concentrated in a specific direction, and thus can be applied to, for example, a side backlight of a liquid crystal display device (L c D). . Referring to FIG. 6, a perspective view of a light emitting diode package structure according to a fourth embodiment of the present invention is shown. In the following, only the differences between the embodiment and the first embodiment will be described, and the similarities will not be described herein. In contrast to the second embodiment, the coupling recess u2c of the package base 11A of the fourth embodiment is formed to be recessed at the opening of the recess 111 and has a flow guiding structure. 12 200905912 Therefore, when the encapsulant 140 is formed, the material of the encapsulant 140 can be filled into the recessed portion 111 and the coupling recess 112c, and the optical lens structure 141 and the stable bonding structure are formed. - FIG. 7 is a perspective view showing a plurality of light emitting diode package structures according to a fifth embodiment of the present invention, and FIG. 8 is a view showing a plurality of light emitting diode package structures according to the fifth embodiment of the present invention. FIG. 9 is a schematic cross-sectional view showing a single light emitting diode package structure according to a fifth embodiment of the present invention. FIG. 9 is a perspective view showing a single light emitting diode package structure according to a fifth embodiment of the present invention. In the following, only the differences between the present embodiment and the first embodiment will be described. The similarities will not be described herein. Compared with the second embodiment, the coupling recess 112d of the package base 110d of the fifth embodiment is recessed on the outer side surface of the package base u〇d. When manufacturing a plurality of LED packages 100, firstly, A package base array 10d is formed, which is composed of a plurality of package bases 110d, and the flow guiding structures of the joint recesses 112d of the package bases 110d are in communication with each other. Next, a light-emitting diode wafer 13 is provided. Then, the encapsulant 14 〇d is formed on the package pedestal array 〇ld. At this time, the material of the encapsulant 14 〇d can be introduced into each of the package pedestals by the diversion structure that is coupled to the recess 112. The recessed portion 111 of the 〇d is covered at least with the coupling recess U2d of the package base 11〇d, thereby forming a stable bonding structure. After forming the encapsulant 140d, a step of dividing the package pedestal array 101d is then performed to form a plurality of LED packages. It should be noted that, in the fifth embodiment, since the U2d system 5 is placed on the outer side of the package base 11〇d, and the encapsulant i4〇d has the optical lens structure 141, the encapsulant 14〇d It is coated on the upper side and the outer side of the package base 110d. Figure 10 is a cross-sectional view showing a photodiode package structure according to a sixth embodiment of the present invention. In the following, only the differences between the present embodiment and the first embodiment will be described, and the similarities will not be described herein. The coupling recess 112e of the package base 11〇e of the sixth embodiment of the first embodiment is formed in the package base 11 〇e and communicates with the recess 111. Therefore, when the encapsulant 140 is formed, the material of the encapsulant 140 can be introduced into the recess U1 and form the optical lens structure 141 and the stable bonding structure. It can be seen from the above embodiments of the present invention that the encapsulant of the LED package structure of the present invention can integrally form an optical lens structure and is firmly bonded to the package base by combining the recesses. Therefore, the light emitting diode package structure of the present invention can omit the provision of the optical lens and form a stable bonding structure to increase the strength of the package structure, thereby simplifying the process and improving the production efficiency and the process yield. Although the present invention has been implemented The disclosure of the present invention is not intended to limit the present invention, and various modifications and refinements can be made without departing from the spirit and scope of the present invention. The scope defined in the scope of application for patent application shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; Schematic diagram of the structure of the carefully installed structure. Fig. 2 is a perspective view showing a light-emitting dipole structure according to a first embodiment of the present invention. The diode package 3 is a top view of the structure of the _200905912 package according to the present invention. 4 and 5 are schematic plan views showing a light emitting diode package structure according to a third embodiment of the present invention. Fig. 6 is a perspective view showing a light emitting diode package structure according to a fourth embodiment of the present invention. Figure 7 is a perspective view showing a plurality of light emitting diode package structures in accordance with a fifth embodiment of the present invention. Figure 8 is a perspective view showing a single light emitting diode package structure in accordance with a fifth embodiment of the present invention. Figure 9 is a cross-sectional view showing a single light emitting diode package structure in accordance with a fifth embodiment of the present invention. Figure 10 is a cross-sectional view showing a light emitting diode package structure in accordance with a sixth embodiment of the present invention. [Main component symbol description]

101 a、101 d :封裝基座陣列 100 :發光二極體封裝結構 110、110a、ll〇b、ll〇d、ll〇e:封裝基座 111、 111 b .凹陷部 111 a :高反射率材料 112、 112a、112c、112d、112e :結合凹部 130 :發光二極體晶片 120 :電極接點 131 :螢光層 140、140d :封膠體 141 :光學透鏡結構 150 :散熱單元101 a, 101 d: package base array 100: light emitting diode package structure 110, 110a, 11〇b, 11〇d, 11〇e: package base 111, 111 b. recess 111 a : high reflectivity Materials 112, 112a, 112c, 112d, 112e: bonding recess 130: light emitting diode wafer 120: electrode contact 131: fluorescent layer 140, 140d: encapsulant 141: optical lens structure 150: heat dissipating unit

Claims (1)

200905912 十、申請專利範圍: h —種發光二極體封裝結構,至少包含: -封裝基座,設有-凹陷部和至少一結合凹部,其中該 結合凹部具有—導流結構’以連通至該凹陷部; 二電極接點,内建於該封裝基座内; 毛光-極體晶片’設置於該凹陷部内,並與該些電極 接點形成電性連接;以及 -封膠體,包覆並密封該些電極接點和該發光二極體晶 片’其中該封膠體係至少包覆至該封裝基座的該結合凹部, 且該封膠體具有至少—光學透鏡結構,其係對應於該發光二 極體晶片來設置。 2. 如申請專利範圍第i項所述之發光二極體封裝結 構’其中該封裝基座的材料係選自由環氧樹脂、玻璃纖維、 聚-鄰-苯二甲醯胺(PPA)、氮化爛、氣化銘、氧化鋁、陶究及 其他具有良好導熱性的電性絕緣材料所組成的一族群。 3. 如申請專利範圍第丨項所述之發光二極體封骏結 構,其中該凹陷部的開口形狀係呈圓形、矩形、楕圓形、= 角形或不規則形。 — 4. 如申請專利範圍帛i項所述之發光二極體封裝結 構,其中該凹陷部的表面形成有一高反射率材料。 。 5. 如申印專利範圍第4項所述之發光二極體封萝妗 16 200905912 構,其中該高反射率材料係選自由Ag、A1、Au、Ti02、Si02 及上述之任意組合所組成之—族群。 6. 如申請專利範圍第1項所述之發光二極體封裝結 構’其中該結合凹部係呈勾槽結構。 7. 如申請專利範圍第1項所述之發光二極體封裝結 構’其中該結合凹部係凹設形成於該凹陷部的開口處。 8. 如申請專利範圍第丨項所述之發光二極體封裝結 構,其中該結合凹部係凹設於該封裝基座的上表面,且該結 合凹部的導流結構係連通於該封裝基座的外側面和該凹陷 部之間。 9.如申請專利範圍第丨項所述之發光二極體封裝結 構,其中該結合凹部係凹設於該封裝基座中,且該結合凹部 的導流結構係連通於該凹陷部。 10.如申請專利範圍第丨項所述之發光二極體封裝結 構,其中該結合凹部係凹設於該封裝基座的外側面。 二極體封裝結 該電路層係形 11.如申請專利範圍第1項所述之發光 構,其中該些電極接點係形成於一電路層上, 成於該封裝基座中。 17 200905912 12.如申請專利範圍第〗項所述之發光二極體封裝結 構’其中該些電極接點係一導電支架的二個電極接腳。 • 13.如申請專利範圍第1項所述之發光二極體封裝結 . 構,其中該封膠體的材質係選自由環氧樹脂、PMMA、聚碳 酸酯(Polycarbonate)及矽膠所組成的一族群。 14.如申請專利範圍第丨項所述之發光二極體封裝結 p 構’其中該封膠體係利用模鑄的方式來—體成型於該封裝基 座上。 15.如中請專利範圍第丨項所述之發光二極體封裝結 構’其中該絲透鏡結構係選自由凸透鏡結構、凹錐透鏡結 構、=鏡結構、菲㈣透鏡結構及組合式魏結構所組成之 一族群。200905912 X. Patent application scope: h-light emitting diode package structure, comprising at least: - a package base, provided with a depressed portion and at least one combined concave portion, wherein the combined concave portion has a flow guiding structure to communicate with the a recessed portion; a two-electrode contact, built in the package base; a matte-pole wafer is disposed in the recess and electrically connected to the electrode contacts; and a sealant, coated Sealing the electrode contacts and the light emitting diode wafer, wherein the sealing system covers at least the bonding recess of the package base, and the sealing body has at least an optical lens structure corresponding to the light emitting The polar body wafer is set. 2. The light emitting diode package structure of claim i wherein the material of the package base is selected from the group consisting of epoxy resin, glass fiber, poly-o-phthalamide (PPA), nitrogen A group of oxidized, gasified, alumina, ceramics and other electrically insulating materials with good thermal conductivity. 3. The light-emitting diode sealing structure according to the above aspect of the invention, wherein the opening has a circular shape, a rectangular shape, an elliptical shape, an angular shape or an irregular shape. 4. The light-emitting diode package structure of claim 1, wherein the surface of the recess is formed with a high reflectivity material. . 5. The light-emitting diode enclosure 16200905912 according to claim 4, wherein the high reflectivity material is selected from the group consisting of Ag, A1, Au, Ti02, SiO2 and any combination thereof. - Ethnic groups. 6. The light emitting diode package structure of claim 1, wherein the bonding recess is a hook groove structure. 7. The light emitting diode package structure of claim 1, wherein the bonding recess is recessed at an opening of the recess. 8. The light emitting diode package structure of claim 2, wherein the bonding recess is recessed on an upper surface of the package base, and the guiding structure of the bonding recess is connected to the package base Between the outer side and the recess. 9. The LED package structure of claim 2, wherein the coupling recess is recessed in the package base, and the flow guiding structure of the coupling recess is in communication with the recess. 10. The light emitting diode package of claim 2, wherein the bonding recess is recessed on an outer side of the package base. The illuminating structure of the first embodiment of the invention, wherein the electrode contacts are formed on a circuit layer and formed in the package pedestal. 17 200905912 12. The LED package structure as described in claim </ RTI> wherein the electrode contacts are two electrode pins of a conductive support. The light-emitting diode package structure according to claim 1, wherein the sealant is made of a group selected from the group consisting of epoxy resin, PMMA, polycarbonate (polycarbonate) and silicone rubber. . 14. The LED package of the invention of claim </ RTI> wherein the encapsulation system is molded onto the package substrate by means of molding. 15. The light emitting diode package structure according to the invention of claim 2, wherein the wire lens structure is selected from the group consisting of a convex lens structure, a concave cone lens structure, a mirror structure, a phenanthrene (tetra) lens structure, and a combined Wei structure. Form a group of people. 16.如申請專利範圍第 構’更至少包含: 1項所述之發光二極體封裝結 一散熱單元,設置 於該封裝基座中。 17.如申請專利範園第 構,其中該散熱單元係選自項所述之發光二極體封褒結 散熱鰭片所組成的一族群。散熱片、散熱塊、散熱基板及 18· —種發光二極體 封骏結構 的製造方法,至少包含: 18 200905912 一 .Γ:封裝基座’其中該封裝基座設有-凹陷部和至少 凹部具有一導流結構’以連通至該凹陷 4,且該封裝基座内建有二電極接點; 設置-發光二極體晶片於朗裝基座的該凹 與該些電極接點形成電性連接;以及 &quot; 垃形成-封㈣於該封裝基座上,用以包覆並密封該此電 C 封裝基座的該結合凹部,且二至少包覆至該 其係對應於該發光二極體:::=具有一光學透鏡結構, 構的.、二申明專利耗圍第18項所述之發光二極體封裝結 破璃输=其中該封裝基座的材料係選自由環氧樹脂、 :璃纖維、聚-鄰·笨二甲醯胺(ΡΡΑ)、氮化硕、氮化链、氧化 族群陶克及其他具有良好導熱性的電性絕緣材料所組成的一 々申咕專利範圍第18項所述之發光二極體封裝結 傅的_ i止t、土 4J·丄 、八中该凹陷部的開口形狀係呈圓形、矩形、 月圓形、三角形或不規則形狀。 構的製▲々申叫專利範圍第1 8項所述之發光二極體封裝結 料。,方去,其中該凹陷部的表面形成有一高反射率材 如申印專利範圍第21項所述之發光二極體封裝結 19 200905912 構的製造方法’其中該高反射率材料係選自由Ag、A卜Au、 Ti02 Si〇2及上述之任意組合所組成之一族群。 - 认如申請專利範圍帛18項所述之發光二極體封裝处 構的製造方法,其中該結合凹部係呈勾槽結構。 24.如中請專利範圍帛18項所述之發光二極體封裝結 構的製ia方去’其中该結合凹部係凹設形成於該凹陷部 () 口處。 幵 25·如申s青專利範圍第18項所述之發光二極體封裝結 構的製造方法,其中該結合凹部係凹設於該封裝基座的上表 面,且該結合凹部的導流結構係連通於該封裝基座的外侧面 和該凹陷部之間。 26. 如申請專利範圍第18項所述之發光二極體封裝結 〇 構的製造方法,其中該結合凹部係凹設於該封裝基座中,且 β亥結合凹部的導流結構係連通於該凹陷部。 27. 如申請專利範圍第18項所述之發光二極體封裝結 構的製造方法,其中該結合凹部係凹設於該封裝基座的外側 面。 28. 如申請專利範圍第a項所述之發光二極體封裝結 構的製造方法,其中該些電極接點係形成於一電路層上,該 20 200905912 電路層係形成於該封裝基座中。 29. 如申請專利範圍第μ項所述之發光二極體封裝結 ’ 構的製造方法’其中該些電極接點係一導電支架的二個電極 接腳。 30. 如申請專利範圍第μ項所述之發光二極體封裝結 構的製造方法,其中該封膠體的材質係選自由環氧樹脂、 ( PMMA、聚碳酸酯(p〇lycarb〇nate)及矽膠所組成的一族群。 31. 如申請專利範圍第18項所述之發光二極體封裝結 構的製造方法,其中該形成該封膠體的步驟中該封膠體係利 用模鑄的方式來一體成型於該封裝基座上。 32. 如申請專利範圍第18項所述之發光二極體封裝結 構的製方法,其中該光學透鏡結構係選自由凸透鏡結構、 凹錐透鏡結構、球鏡結構、菲㈣透鏡結構及組合式透鏡結 構所組成之一族群。 33·如申請專利範圍第18項所述之發光二極體封裝結 構的製造方法,其中該封裝基座更設有一散熱單元。 34.如申請專利範圍第33項所述之發光二極體封裝結 構的製造方法,其中該散熱單福選自由散熱片、散熱塊、 散熱基板及散熱鰭片所組成的一族群。 21 200905912 35. —種發光二極體封裝結構的製造方法,至少包含: 提供一封裝基座陣列,其中該封裝基座陣列係由複數個 封A基座所組成,母一該些封裝基座設有一凹陷部和至少一 結合凹部,該結合凹部具有一導流結構,以連通至該凹陷 部’且每一該些封裝基座内建有二電極接點; 设置一發光二極體晶片於每一該些封裝基座的該凹陷 部内,並與該些電極接點形成電性連接; 形成一封膠體於該封裝基座陣列上,用以包覆並密封每 一該些封裝基座中的該些電極接點和該發光二極體晶片,其 中該封㈣係至少&amp;覆至每一該些封裝基座的該結合= 部’且該封#體具有複數個光學透鏡結構,其係對應於每一 該些封裝基座中的該發光二極體晶片來設置;以及 對該封裝基座陣列和該封膠體進行一分割步冑,以形成 複數個發光二極體封裝結構。 36.如中請專利範圍第35項所述之發光二極體封裝灶 構的製造方法,其中該些封裝基座的材料係選自由環氧: 脂、玻璃纖維、聚♦苯二甲醯胺(ppA)、氮化 的氧=群料及其他具有良好導熱性的電性絕緣材料所組成 37.如申請專利範圍第 構的製造方法,其中每一該 狀係呈圓形、矩形或楕圓形 35項所述之發光二極體封裝結 些封裝基座之該凹陷部的開口形 、二角形或不規則形。 22 200905912 38.如申請專利範圍第35項所述之發光二極體封 ^製造方法,其中每—該些封裝基座之該凹陷部的表面形° 成有一高反射率材料。 39_如申請專利範圍第38項所述之發光二極 構的製造方法,其中該高反射率材料係選自由Ag、AI ^ Ti02、SK32及上述之任意組合所組成之—族群。 40.如申請專利範圍第%項所述之發光二極 構的製造方法,並中备一嗲此 體封裝、,« 枰 、 十裝基座之該結合凹部係呈勾 構:發光,封裝結 形成於該凹陷部的開σ處。—^之該結合凹部係凹設 構的:造:Γ1Γ圍第35項所述之發光二極體封裝結 ===該結合凹部係凹設於每-該些封裝基座 基座的外侧二:::流結構係連通於每-該些封裝 構的:造3請=二3:項所述之發光二極體結 中,且該結合二::::::凹設於每-該些封裝基座 旳導抓結構係連通於該凹陷部。 23 200905912 44. 如申凊專利範圍第35項所述之發光二極體封裝結 冓的裝:^方法’其中該結合凹部係凹設於每—該些封裝基座 的外側面。 45. 如申請專利範圍第35項所述之發光二極體封裝結 構的製造方法,其中該些電極接關形成於—電路層上,該 電路層係形成於每一該些封裝基座中。 46. 如申叫專利範圍第35項所述之發光二極體封裝結 構的製造方法’其中該些電極接點係—導電支架的二個電極 接腳。 47. 如申凊專利範圍第35項所述之發光二極體封裝結 構的製造方法,其中該封膠體的材質係選自由環氧樹脂、 PMMA、聚碳酸酯(Polycarbonate)及矽膠所組成的一族群。 48. 如申請專利範圍第35項所述之發光二極體封裝結 構的製造方法,其中該形成該封膠體的步驟中該封膠體係利 用模鑄的方式來一體成型於該封裝基座陣列上。 49. 如申請專利範圍第35項所述之發光二極體封裝結 構的製造方法,其中該光學透鏡結構係選自由凸透鏡結構、 凹錐透鏡結構、球鏡結構、鋒㈣鏡結構及纟a合式透鏡結 構所組成之一族群。 24 200905912 5〇·如申請專利範圍35項所述之發光二極體封裝結構 的製造方法,其中每一該些封裝基座更設有一散熱單元。 極體封裝結 、散熱塊、 51.如申請專利範圍第%項所述之發光二 構的製造方法’其中該散熱單元係 : 散熱基板及散熱鰭片所組成的—族群。月…、 〇 2516. The invention as claimed in claim </ RTI> further comprising: a light-emitting diode package as described in claim 1 , a heat dissipating unit disposed in the package base. 17. The method of claiming a patent, wherein the heat dissipating unit is selected from the group consisting of a light-emitting diode-sealed heat-dissipating fin. The heat sink, the heat dissipating block, the heat dissipating substrate, and the manufacturing method of the light emitting diode sealing structure include at least: 18 200905912 I. 封装: package base ' wherein the package base is provided with a depressed portion and at least a concave portion Having a flow guiding structure 'to communicate with the recess 4, and the package base has two electrode contacts; the recess of the light-emitting diode chip on the mounting base forms electrical properties with the electrode contacts Connecting and sealing (four) on the package base to cover and seal the bonding recess of the electric C package base, and at least covering the system to correspond to the light emitting diode The body:::= has an optical lens structure, the structure of the light-emitting diode package of claim 18, wherein the material of the package base is selected from epoxy resin, : Glass fiber, poly-o-, dioxin, bismuth, nitriding chain, oxidized group, earthenware, and other electrical insulating materials with good thermal conductivity The light-emitting diode package described in the item is _i stop t, The opening shape of the depression portion of the soil 4J·丄 and the eighth is circular, rectangular, moon-shaped, triangular or irregular. The structure of the structure ▲ 々 is called the luminescent diode package described in the patent scope of item 18. , the surface of the depressed portion is formed with a high reflectivity material, such as the method of manufacturing the light emitting diode package of the invention of claim 21, wherein the high reflectivity material is selected from the group consisting of Ag , Abu Au, Ti02 Si〇2, and any combination of the above. The manufacturing method of the light emitting diode package structure according to claim 18, wherein the bonding recess is a hook groove structure. 24. The illuminating diode package structure of claim 18, wherein the bonding recess is recessed at the opening of the recess. The manufacturing method of the light emitting diode package structure according to Item 18, wherein the bonding recess is recessed on an upper surface of the package base, and the guiding structure of the bonding recess is Connected between the outer side of the package base and the recess. 26. The method of fabricating a light-emitting diode package structure according to claim 18, wherein the bonding recess is recessed in the package base, and the flow guiding structure of the β-coupling recess is connected to The recess. 27. The method of fabricating a light emitting diode package according to claim 18, wherein the bonding recess is recessed on an outer side of the package base. 28. The method of fabricating a light emitting diode package according to claim a, wherein the electrode contacts are formed on a circuit layer, and the circuit layer is formed in the package base. 29. The method of fabricating a light emitting diode package structure according to the invention of claim 5, wherein the electrode contacts are two electrode pins of a conductive holder. 30. The method for manufacturing a light emitting diode package structure according to the invention, wherein the material of the sealant is selected from the group consisting of epoxy resin, (PMMA, polycarbonate, and silicone). The method for manufacturing a light-emitting diode package structure according to claim 18, wherein in the step of forming the sealant, the sealant system is integrally molded by means of molding. The method of fabricating a light emitting diode package structure according to claim 18, wherein the optical lens structure is selected from the group consisting of a convex lens structure, a concave cone lens structure, a spherical mirror structure, and a phenanthrene (IV) A method of manufacturing a light-emitting diode package structure according to claim 18, wherein the package base is further provided with a heat dissipation unit. The method for manufacturing a light emitting diode package structure according to Item 33, wherein the heat dissipation unit is selected from the group consisting of a heat sink, a heat dissipation block, a heat dissipation substrate, and a heat dissipation fin. 21 200905912 35. A method for fabricating a light emitting diode package structure, comprising: providing a package base array, wherein the package base array is composed of a plurality of package A bases, and the mother package The pedestal is provided with a recessed portion and at least one combined recessed portion having a flow guiding structure for communicating to the recessed portion ′ and each of the package pedestals has two electrode contacts; and a light emitting diode is disposed Was in the recessed portion of each of the package bases and electrically connected to the electrode contacts; forming a gel on the package base array for covering and sealing each of the package bases The electrode contacts and the light emitting diode chip in the socket, wherein the sealing layer (4) is at least &amp; covering the bonding portion of each of the package bases and the sealing body has a plurality of optical lens structures Corresponding to the LED array in each of the package bases; and performing a splitting step on the package base array and the encapsulant to form a plurality of LED packages 36. If The method for manufacturing a light-emitting diode packaged stove according to claim 35, wherein the materials of the package base are selected from the group consisting of epoxy: glass fiber, poly(phthalamide) (ppA), Nitrided oxygen = group material and other electrically insulating materials having good thermal conductivity. 37. A manufacturing method according to the scope of the patent application, wherein each of the shapes is circular, rectangular or rounded as described in item 35 The light-emitting diode package is provided with an opening shape, a square shape or an irregular shape of the recessed portion of the package base. The method for manufacturing the light-emitting diode package according to claim 35, wherein The surface of the recess of each of the package bases is formed with a high reflectivity material. 39. The method of fabricating a light-emitting diode according to claim 38, wherein the high reflectivity material is selected from the group consisting of Ag, AI^Ti02, SK32, and any combination thereof. 40. The method for manufacturing a light-emitting diode according to claim 5% of the patent application, and preparing the package of the body, the joint recess of the 枰 and ten-mounted pedestal is hooked: light-emitting, encapsulating Formed at the opening σ of the depressed portion. The combination of the concave portion and the concave portion is formed by: Γ1Γ 发光 发光 发光 发光 = = ======================================================================= ::: The flow structure is connected to each of the package structures: the light-emitting diode junction described in the item 3:=3:3, and the combination two:::::: recessed in each-the The package base 旳 guiding structure is connected to the recess. 23 200905912 44. The method of claim 2, wherein the bonding recess is recessed on an outer side of each of the package bases. 45. A method of fabricating a light emitting diode package according to claim 35, wherein the electrode contacts are formed on a circuit layer formed in each of the package pedestals. 46. The method of fabricating a light emitting diode package structure according to claim 35, wherein the electrode contacts are two electrode pins of the conductive holder. The method for manufacturing a light emitting diode package according to claim 35, wherein the material of the sealant is selected from the group consisting of epoxy resin, PMMA, polycarbonate (polycarbonate) and silicone rubber. Ethnic group. The manufacturing method of the light emitting diode package structure according to claim 35, wherein in the step of forming the sealant, the sealing system is integrally molded on the package base array by die casting. . 49. The method of fabricating a light emitting diode package structure according to claim 35, wherein the optical lens structure is selected from the group consisting of a convex lens structure, a concave cone lens structure, a spherical mirror structure, a front (four) mirror structure, and a 纟a combination A group of lenses consisting of a group of lenses. The manufacturing method of the light emitting diode package structure according to claim 35, wherein each of the package bases further comprises a heat dissipating unit. The method of manufacturing a light-emitting diode according to the invention of claim 1 wherein the heat-dissipating unit is a group of heat-dissipating substrates and heat-dissipating fins. Month..., 〇 25
TW96126839A 2007-07-23 2007-07-23 Light emitting diode packaging structure and manufacturing method thereof TW200905912A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8496357B2 (en) 2009-03-02 2013-07-30 Everlight Electronics Co., Ltd. Dissipation module for a light emitting device and light emitting diode device having the same
TWI412697B (en) * 2009-12-09 2013-10-21 Asda Technology Co Ltd Light device with multiple led light source
CN103367598A (en) * 2012-03-29 2013-10-23 展晶科技(深圳)有限公司 Light emitting diode packaging structure
TWI484668B (en) * 2012-03-08 2015-05-11 Kenly Prec Ind Co Ltd Manufacturing method of light emitting diodes
TWI773884B (en) * 2018-03-06 2022-08-11 立碁電子工業股份有限公司 Uv led package structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8496357B2 (en) 2009-03-02 2013-07-30 Everlight Electronics Co., Ltd. Dissipation module for a light emitting device and light emitting diode device having the same
TWI412697B (en) * 2009-12-09 2013-10-21 Asda Technology Co Ltd Light device with multiple led light source
TWI484668B (en) * 2012-03-08 2015-05-11 Kenly Prec Ind Co Ltd Manufacturing method of light emitting diodes
CN103367598A (en) * 2012-03-29 2013-10-23 展晶科技(深圳)有限公司 Light emitting diode packaging structure
TWI489663B (en) * 2012-03-29 2015-06-21 Advanced Optoelectronic Tech Led package
TWI773884B (en) * 2018-03-06 2022-08-11 立碁電子工業股份有限公司 Uv led package structure

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