JP4886869B2 - 半導体発光素子およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims description 154
- 229910052751 metal Inorganic materials 0.000 claims description 93
- 239000002184 metal Substances 0.000 claims description 93
- 150000004767 nitrides Chemical class 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910015365 Au—Si Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 42
- 239000000853 adhesive Substances 0.000 description 36
- 230000001070 adhesive effect Effects 0.000 description 36
- 239000013078 crystal Substances 0.000 description 27
- 238000000605 extraction Methods 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
前記n型窒化物半導体層の上面における前記保護層を、外周領域を除き除去し、前記保護層が形成されている領域を除いて前記n型窒化物半導体層の上面を露出する工程と、前記n型窒化物半導体層の露出された上面に、前記複数の素子に対応してn電極を形成する工程と、前記n型窒化物半導体層の露出された上面をウェットエッチングすることにより、前記露出された上面に凹凸を形成する工程と、前記第2基板の、前記第1メタル層と反対側の面にp電極を設ける工程と、を備えていることを特徴とする。
続いて、公知のリソグラフィー技術を用いて、窒化物半導体結晶膜12、14、16、18をパターニングし、半導体発光素子毎に分離する。このとき、接着メタル22はパターニングされず、半導体発光素子毎に分離された窒化物半導体結晶膜間には、接着メタル22が露出した状態となる。また、パターニングされた窒化物半導体結晶膜は、GaN層12からp型GaN層18に向かうにつれて膜面の面積が連続的に増大する、断面がテーパー形状のメサとなる(図3(a))。
12 GaN層(バッファ層)
14 n型GaN層
16 多重量子井戸構造の活性層(InGaN層)
18 p型GaN層
20 p電極(反射コンタクト電極)
22 接着メタル
30 支持基板
32 接着メタル
40 保護層
44 n電極
46 p電極
Claims (9)
- 基板上に設けられた第1メタル層と、
前記第1メタル層上に設けられたp型窒化物半導体層と、前記p型窒化物半導体層上に設けられ窒化物半導体の多重量井戸構造を有する活性層と、前記活性層上に設けられたn型窒化物半導体層と、を有し、前記n型窒化物半導体層から前記p型窒化物半導体層に向かうにつれて膜面の面積が連続的に増大し、断面がテーパー形状である積層膜と、
前記n型窒化物半導体層の上面の一部の領域に設けられたn電極と、
前記基板の、前記第1メタル層と反対側の面に設けられたp電極と、
前記第1メタル層側における前記p型窒化物半導体層の下面の一部の領域に設けられたコンタクト電極と、
前記p型窒化物半導体層と前記第1メタル層との間に、前記コンタクト電極を覆うとともに前記コンタクト電極および前記第1メタル層に接するように設けられ、前記第1メタル層の最小直径よりも小さくかつ前記p型窒化物半導体層の下面の最小直径よりも大きな最小直径を有する第2メタル層と、
前記n型窒化物半導体層の上面の外周領域、前記積層膜の側面、前記第2メタル層の上面における前記p型窒化物半導体層と接する領域以外の領域、および前記第1メタル層の上面における前記第2メタル層と接する領域以外の領域を覆う保護膜と、
を備え、前記n電極が設けられた領域および前記保護膜によって覆われている領域を除く、前記n型窒化物半導体層の上面の領域に、凹凸が形成されていることを特徴とする半導体発光素子。 - 前記基板は、シリコン基板、シリコンカーバイド基板、シリコン基板にゲルマニウムを接合した基板、銅基板のいずれかであることを特徴とする請求項1記載の半導体発光素子。
- 前記コンタクト電極は、銀またはアルミニウムのいずれかを含むことを特徴とする請求項1または2記載の半導体発光素子。
- 前記第2メタル層は、チタン、白金、金、およびタングステンのいずれかを含むことを特徴とする請求項1乃至3のいずれかに記載の半導体発光素子。
- 前記保護層は、二酸化ケイ素、窒化ケイ素、酸化ジルコニウム、酸化ニオブ、酸化アルミニウムのいずれかであることを特徴とする請求項1乃至4のいずれかに記載の半導体発光素子。
- 前記第1メタル層は、Au−Sn層、Au−Si層、Ag−Sn−Cu層、Sn−Bi層、Au層、Sn層、Cu層のいずれかであることを特徴とする請求項1乃至5のいずれかに記載の半導体発光素子。
- 第1基板上に、n型窒化物半導体層、窒化物半導体の多重量井戸構造を有する活性層、およびp型窒化物半導体層を、この順序で積層された積層膜を形成する工程と、
前記p型窒化物半導体層の上面に、コンタクト電極を形成する工程と、
前記コンタクト電極および前記積層膜の上面上に、前記積層膜の上面の最小直径よりも大きな最小直径を有する第1メタル層を形成する工程と、
前記第1メタル層をパターニングする工程と、
前記積層膜を、上面から下面に向かうにつれて膜面の面積が増大する、断面がテーパー形状となるようにパターニングする工程と、
第2基板の上面に、前記第1メタル層の最小直径よりも大きな最小直径を有し、前記第1メタル層よりも融点の低い材料の第2メタル層を形成する工程と、
前記第2メタル層の上面に、前記第1メタル層の上面が対向するように前記第1基板を配置し、前記第2メタル層の上面と前記第1メタル層の上面とを張り合わせる工程と、
前記第1基板側からレーザを照射し前記第1基板を前記積層膜から剥離し、前記積層膜を前記第2基板に転写する工程と、
前記n型窒化物半導体層から前記p型窒化物半導体層に向かうにつれて膜面の面積が大きくなり、断面がテーパー形状となるように前記積層膜をパターニングする工程と、
前記n型窒化物半導体層の上面、前記積層膜の側面、前記第1メタル層の前記p型窒化物半導体層と接する領域以外の領域、および前記第2メタル層の前記第1メタル層と接する領域以外の領域を覆う保護膜を形成する工程と、
前記n型窒化物半導体層の上面における前記保護層を、外周領域を除き除去し、前記保護層が形成されている領域を除いて前記n型窒化物半導体層の上面を露出する工程と、
前記n型窒化物半導体層の露出された上面に、前記複数の素子に対応してn電極を形成する工程と、
前記n型窒化物半導体層の露出された上面をウェットエッチングすることにより、前記露出された上面に凹凸を形成する工程と、
前記第2基板の、前記第1メタル層と反対側の面にp電極を設ける工程と、
を備えていることを特徴とする半導体発光素子の製造方法。 - 前記レーザは、UVレーザであることを特徴とする請求項7記載の半導体発光素子の製造方法。
- 前記ウェットエッチングは、アルカリ溶液を用いて行うことを特徴とする請求項7または8記載の半導体発光素子の製造方法。
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JP2010046905A JP4886869B2 (ja) | 2010-03-03 | 2010-03-03 | 半導体発光素子およびその製造方法 |
US12/874,475 US8178891B2 (en) | 2010-03-03 | 2010-09-02 | Semiconductor light emitting device and method for manufacturing the same |
US13/450,063 US8735925B2 (en) | 2010-03-03 | 2012-04-18 | Semiconductor light emitting device and method for manufacturing the same |
US14/252,843 US8981398B2 (en) | 2010-03-03 | 2014-04-15 | Semiconductor light emitting device and method for manufacturing the same |
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JP2010046905A JP4886869B2 (ja) | 2010-03-03 | 2010-03-03 | 半導体発光素子およびその製造方法 |
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US8853668B2 (en) * | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
JP5992702B2 (ja) * | 2012-03-21 | 2016-09-14 | スタンレー電気株式会社 | 半導体発光素子、および、車両用灯具、ならびに、半導体発光素子の製造方法 |
US8759128B2 (en) * | 2012-03-22 | 2014-06-24 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having recessed electrode and light extraction structures and method of fabrication |
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CN105428475B (zh) * | 2015-12-17 | 2018-05-01 | 映瑞光电科技(上海)有限公司 | 垂直led芯片结构及其制备方法 |
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