KR101193628B1 - 저온 실리콘 화합물 증착 - Google Patents

저온 실리콘 화합물 증착 Download PDF

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KR101193628B1
KR101193628B1 KR1020077003856A KR20077003856A KR101193628B1 KR 101193628 B1 KR101193628 B1 KR 101193628B1 KR 1020077003856 A KR1020077003856 A KR 1020077003856A KR 20077003856 A KR20077003856 A KR 20077003856A KR 101193628 B1 KR101193628 B1 KR 101193628B1
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silicon
delete delete
layer
trisilane
process chamber
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KR20070051279A (ko
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루벤 하베르코트
유엣 메이 완
마리누스 제이. 드 블랑크
자코부스 요한네스 뷰렌스
미하엘 에이. 토드
케이스 디. 윅스
크리스챤 제이. 베르크호벤
크리스토프 에프. 포마레데
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에이에스엠 인터내셔널 엔.브이.
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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    • H10D64/01332—Making the insulator
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    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
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    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
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    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Luminescent Compositions (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020077003856A 2004-08-27 2005-08-25 저온 실리콘 화합물 증착 Expired - Lifetime KR101193628B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60506804P 2004-08-27 2004-08-27
US60/605,068 2004-08-27
PCT/US2005/030243 WO2006026350A2 (en) 2004-08-27 2005-08-25 Low temperature silicon compound deposition

Publications (2)

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KR20070051279A KR20070051279A (ko) 2007-05-17
KR101193628B1 true KR101193628B1 (ko) 2012-10-24

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KR1020050078919A Withdrawn KR20060050712A (ko) 2004-08-27 2005-08-26 원격 플라즈마 활성 질화물 형성방법

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US (1) US7629270B2 (https=)
JP (2) JP4685104B2 (https=)
KR (2) KR101193628B1 (https=)
TW (1) TW200618109A (https=)
WO (1) WO2006026350A2 (https=)

Cited By (1)

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KR20150104037A (ko) * 2014-03-04 2015-09-14 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
KR101676558B1 (ko) * 2014-03-04 2016-11-15 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US9613798B2 (en) 2014-03-04 2017-04-04 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

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JP4685104B2 (ja) 2011-05-18
KR20060050712A (ko) 2006-05-19
WO2006026350A3 (en) 2006-10-12
TW200618109A (en) 2006-06-01
US20060110943A1 (en) 2006-05-25
JP2008511993A (ja) 2008-04-17
US7629270B2 (en) 2009-12-08
WO2006026350A2 (en) 2006-03-09
KR20070051279A (ko) 2007-05-17

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