JP4685104B2 - 低温シリコン化合物堆積 - Google Patents
低温シリコン化合物堆積 Download PDFInfo
- Publication number
- JP4685104B2 JP4685104B2 JP2007530121A JP2007530121A JP4685104B2 JP 4685104 B2 JP4685104 B2 JP 4685104B2 JP 2007530121 A JP2007530121 A JP 2007530121A JP 2007530121 A JP2007530121 A JP 2007530121A JP 4685104 B2 JP4685104 B2 JP 4685104B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- process chamber
- batch
- trisilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 150000003377 silicon compounds Chemical class 0.000 title claims description 20
- 230000008021 deposition Effects 0.000 title description 57
- 238000000034 method Methods 0.000 claims description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 100
- 229910052710 silicon Inorganic materials 0.000 claims description 100
- 239000010703 silicon Substances 0.000 claims description 98
- 239000007789 gas Substances 0.000 claims description 90
- 230000008569 process Effects 0.000 claims description 89
- 238000000151 deposition Methods 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 62
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 62
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 60
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 55
- 239000002210 silicon-based material Substances 0.000 claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 43
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- 150000003254 radicals Chemical class 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010923 batch production Methods 0.000 claims description 11
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 230000036961 partial effect Effects 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 187
- 239000010408 film Substances 0.000 description 75
- 239000002243 precursor Substances 0.000 description 32
- 239000012686 silicon precursor Substances 0.000 description 31
- 235000012431 wafers Nutrition 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 238000010926 purge Methods 0.000 description 17
- 239000000376 reactant Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 238000005121 nitriding Methods 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 238000011065 in-situ storage Methods 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 9
- 229920000548 poly(silane) polymer Polymers 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000007845 reactive nitrogen species Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- -1 thickness Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- JUINSXZKUKVTMD-UHFFFAOYSA-N hydrogen azide Chemical compound N=[N+]=[N-] JUINSXZKUKVTMD-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000003642 reactive oxygen metabolite Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3148—Silicon Carbide layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Luminescent Compositions (AREA)
Description
図1〜6は、オランダ国ビルトホーヘン(Bilthoven,The Netherlands)のASMインターナショナル(International)N.V.から商品名アドバンス(Advance)412TMまたはA412TMで市販されている、例示的なバッチリアクタの2つの異なる型を図示する。図示のリアクタは垂直炉タイプのリアクタであり、効率的な加熱および装填シーケンスの利点があるが、当業者には本明細書に開示した原理および利点が他のタイプのリアクタに適用され得ることは理解されよう。
シランをシリコン前駆体として用いることが好適である。シランをモノシラン(SiH4)、ポリシラン、およびクロロシラン(SiH4−nCln(式中、n=1〜4))からなる群から選択することができる。
以下により詳細に説明するように、シリコン含有化合物層を形成する際、基板をシリコン前駆体に露出することにより薄いシリコン層をまず基板上に堆積させる。そしてシリコン層を他の反応種と反応させてシリコン含有化合物層を形成することができる。これらの堆積および反応の多数の連続サイクルを行うことによりシリコン含有化合物層を所望の厚さに積み重ねることができる。
図9はトリシランによるシリコン層と反応するとともにシリコン化合物層を形成するラジカルの使用に対するある局面においてより具体的な方法で窒化シリコン層の堆積のプロセスを図示する。
トリシラン堆積に好適な非常に低い温度条件下で非反応性であるが、プラズマパワーをチューニングすることにより活性化してシリコン層と反応するラジカルを形成するとともにシリコン化合物を形成することができる、多くの他の反応物についても同じことが言えることは当業者には理解できよう。さらにリモートプラズマ発生器(図4)に対して、またはインサイチュプラズマ源(図5〜6)に対してプラズマパワーをチューニングすることができる。
好適な実施形態による好適なシリコン含有化合物膜は、膜の表面にわたって高均一な厚さを有することが望ましい。膜厚均一性は多数点厚さ測定、例えば偏光解析法または断面切片法を行い、様々な厚さ測定値を平均することにより平均厚さを決定し、さらにrms厚さ変動を決定することにより判定することが好ましい。所与の表面積にわたる比較を可能にするためにその結果を、rms厚さ変化を平均厚さで割って100を掛けて算出しその結果をパーセンテージとして表わす、パーセント非均一性として表現することができる。厚さ非均一性は約20%以下であることが好適であり、約10%以下であることがより好適であり、約5%以下であることがさらに好適であり、約2%以下であることが最も好適である。
オランダ国ビルトホーヘン(Bilthoven,The Netherlands)のASMインターナショナル(International)N.V.のバッチA412TMリアクタ内で窒化シリコン層を形成した。ウェハのバッチをボート内に装填するとともに、そのボートを反応チャンバ内に装填してトリシラン堆積の準備をした。ウェハの温度は各ウェハにわたる温度が約435℃で均一になるように安定させる。ボートを反応チャンバ内で垂直軸について5rpmの速度で回転させた。圧力を約1.3Torrに設定した。不活性ガスで希釈されたトリシランを、3.3mTorrのトリシラン分圧で1.5分間反応チャンバ内に流した。アモルファスシリコンの薄層が生じる。トリシラン流を遮断した。そして電力を3000Wに設定して、10分間MKSリモートマイクロ波ラジカル発生器(MRG)を介して5slmN2を供給することにより窒化を行った。このサイクルを約50回繰り返した。
窒化中にマイクロ波ラジカル発生器(MRG)を介して5slmN2に加えて反応チャンバ内にNH3を別にさらに供給したことを除き、実施例1のプロセスを用いて窒化シリコン層を形成した。
オランダ国ビルトホーヘン(Bilthoven,The Netherlands)のASMインターナショナル(International)N.V.のバッチA412TMリアクタ内で窒化シリコン層を形成した。ウェハのバッチを、垂直方向に分離され且つ主面が水平に配向されているボート内に装填するとともに、そのボートを反応チャンバ内に装填してトリシラン堆積の準備をした。ウェハの温度は各ウェハにわたる温度が約435℃で均一になるように安定させた。ボートを反応チャンバ内で垂直軸について5rpmの速度で回転させた。プロセス条件は表1に規定した通りであった。4つの異なる窒化条件、すなわち1−窒化なし、2−N2による窒化、3−N2+90sccmNH3による窒化、4−N2+180sccmNH3による窒化を詳細に調べた。すべての場合においてトリシラン露出ステップの50回のサイクルを用いてアモルファスシリコン膜を堆積し、各トリシラン露出ステップはパージステップと交互に行った。アモルファスシリコン堆積ステップ中、トリシランおよびN2を第1の多数穴注入器を介して注入した。窒化ステップ中、N2(およびNH3)を、炉の垂直高さにわたって延びている一対の電極を有し、2.45GHzの周波数の高周波数電力により駆動されるインサイチュラジカル発生器に近接する第2の多数穴注入器を介して注入した。プラズマ点火のためにより高流量およびより高圧力を選択してプラズマの点火を容易にした。後続のプラズマ露出ステップ中、より低流量およびより低圧力を用いてラジカルの拡散長を増大し、垂直積層ウェハ間により容易に浸透できるようにした。
Claims (21)
- 複数の基板をトリシランの供給に露出することによりバッチホットウォールプロセスチャンバ内で前記基板上にシリコン層を堆積することであって、前記バッチホットウォールプロセスチャンバ内のプロセス条件は、前記シリコン層の反応速度により制限された堆積を達成するように選択されること、
前記トリシランの供給を遮断すること、及び
前記供給の遮断後に、前記バッチバッチホットウォールプロセスチャンバ内において、電流を導体コイルに供給し、かつ活性化させたプラズマ活性化反応種に前記シリコン層を露出することによりシリコン化合物層を形成することを含み、
前記導体コイルは、真空絶縁スリーブ内に収容されており、
前記プラズマ活性化反応種は、前記真空絶縁スリーブの外側かつ前記バッチホットウォールプロセスチャンバ内で形成される
集積回路の作製方法。 - 前記シリコン層を堆積することが、約600℃以下の温度で行われる請求項1に記載の方法。
- 前記温度が約500℃以下である請求項2に記載の方法。
- 前記基板を前記トリシランの供給に露出することが、約10mTorr以下のトリシラン分圧を設定することを含む請求項1に記載の方法。
- 前記プラズマ活性化反応種が窒素ラジカルを含む請求項1に記載の方法。
- 前記バッチホットウォールプロセスチャンバにアンモニアを供給することをさらに含む請求項1に記載の方法。
- 前記アンモニアを供給することが、前記バッチホットウォールプロセスチャンバ内でまず前記アンモニアを前記プラズマ活性化反応種と混合することを含み、前記アンモニアを前記プラズマ活性化反応種と混合することが、前記アンモニアを活性化して前記アンモニアから窒素ラジカルを形成する請求項6に記載の方法。
- 前記シリコン層を堆積することが、1を超えるシリコン原子層を形成することを含む請求項1に記載の方法。
- 前記プラズマ活性化反応種が窒素種を含み、前記シリコン含有化合物層が窒化シリコンを含む請求項1に記載の方法。
- 前記シリコン含有化合物層が約5%以下の厚さ非均一性を有する請求項1に記載の方法。
- 前記シリコン含有化合物層が約80%以上のステップカバレージを有する請求項10に記載の方法。
- ホットウォールバッチプロセスチャンバと、
前記ホットウォールバッチプロセスチャンバ内の真空チューブを備え、前記真空チューブが絶縁スリーブにより形成され、前記絶縁スリーブが電源に接続された導電性材料のコイルを収容し、前記真空チューブが前記絶縁スリーブの外側であるが前記ホットウォールバッチプロセスチャンバ内にプラズマを発生するように構成され、
導電性コアをさらに含み、前記コイルが前記導電性コアに巻き付いている、
バッチ半導体リアクタ。 - 前記真空チューブが前記ホットウォールバッチプロセスチャンバ内で垂直積層ウェハボートに隣接して作動するように構成されている請求項12に記載の半導体リアクタ。
- 前記真空チューブの高さが前記垂直積層ウェハボートの高さの約90%より大きい請求項13に記載の半導体リアクタ。
- 前記導電性材料が銅を含む請求項12に記載の半導体リアクタ。
- 前記導電性コアが鉄を含む請求項12に記載の半導体リアクタ。
- 前記電源が高周波(RF)電源である請求項12に記載の半導体リアクタ。
- 前記ホットウォールバッチプロセスチャンバがウェハボートを収容するように構成されている請求項12に記載の半導体リアクタ。
- 前記ホットウォールバッチプロセスチャンバとガス連通しているガス源をさらに含み、ここで前記ガス源がトリシラン源を含む請求項12に記載の半導体リアクタ。
- 前記ガス源がN2源をさらに含む請求項19に記載の半導体リアクタ。
- 前記ガス源がNH3源をさらに含む請求項20に記載の半導体リアクタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60506804P | 2004-08-27 | 2004-08-27 | |
PCT/US2005/030243 WO2006026350A2 (en) | 2004-08-27 | 2005-08-25 | Low temperature silicon compound deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008511993A JP2008511993A (ja) | 2008-04-17 |
JP4685104B2 true JP4685104B2 (ja) | 2011-05-18 |
Family
ID=36000573
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007530121A Active JP4685104B2 (ja) | 2004-08-27 | 2005-08-25 | 低温シリコン化合物堆積 |
JP2005245398A Withdrawn JP2006086521A (ja) | 2004-08-27 | 2005-08-26 | リモートプラズマアクティベーテッドナイトライデーション |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005245398A Withdrawn JP2006086521A (ja) | 2004-08-27 | 2005-08-26 | リモートプラズマアクティベーテッドナイトライデーション |
Country Status (5)
Country | Link |
---|---|
US (1) | US7629270B2 (ja) |
JP (2) | JP4685104B2 (ja) |
KR (2) | KR101193628B1 (ja) |
TW (1) | TW200618109A (ja) |
WO (1) | WO2006026350A2 (ja) |
Families Citing this family (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007281082A (ja) * | 2006-04-04 | 2007-10-25 | Tokyo Electron Ltd | 成膜方法及び成膜装置並びに記憶媒体 |
US20070277734A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7825038B2 (en) * | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US7790634B2 (en) * | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
US7902080B2 (en) * | 2006-05-30 | 2011-03-08 | Applied Materials, Inc. | Deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
US8232176B2 (en) * | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
JP2008202107A (ja) * | 2007-02-21 | 2008-09-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US7745352B2 (en) * | 2007-08-27 | 2010-06-29 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process |
US7943531B2 (en) | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
US7803722B2 (en) * | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
US7867923B2 (en) * | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8298628B2 (en) | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
KR101266135B1 (ko) * | 2008-06-03 | 2013-05-27 | 도쿄엘렉트론가부시키가이샤 | 실리콘 함유 막의 저온 증착 |
CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
US8481433B2 (en) * | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US7935643B2 (en) * | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US7989365B2 (en) * | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
JP5797790B2 (ja) * | 2009-09-30 | 2015-10-21 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP5467007B2 (ja) * | 2009-09-30 | 2014-04-09 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
JP5421736B2 (ja) * | 2009-11-13 | 2014-02-19 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、及びプログラム |
JP2013516763A (ja) | 2009-12-30 | 2013-05-13 | アプライド マテリアルズ インコーポレイテッド | フレキシブルな窒素/水素比を使用して生成されるラジカルを用いる誘電体膜成長 |
US8329262B2 (en) * | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
JP2013517616A (ja) | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | 酸化物ライナを使用する流動可能な誘電体 |
SG182333A1 (en) | 2010-01-07 | 2012-08-30 | Applied Materials Inc | In-situ ozone cure for radical-component cvd |
US8748259B2 (en) * | 2010-03-02 | 2014-06-10 | Applied Materials, Inc. | Method and apparatus for single step selective nitridation |
JP2013521650A (ja) | 2010-03-05 | 2013-06-10 | アプライド マテリアルズ インコーポレイテッド | ラジカル成分cvdによる共形層 |
US8236708B2 (en) | 2010-03-09 | 2012-08-07 | Applied Materials, Inc. | Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor |
US7994019B1 (en) | 2010-04-01 | 2011-08-09 | Applied Materials, Inc. | Silicon-ozone CVD with reduced pattern loading using incubation period deposition |
US8476142B2 (en) | 2010-04-12 | 2013-07-02 | Applied Materials, Inc. | Preferential dielectric gapfill |
US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8524004B2 (en) | 2010-06-16 | 2013-09-03 | Applied Materials, Inc. | Loadlock batch ozone cure |
US8318584B2 (en) | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
US7994070B1 (en) * | 2010-09-30 | 2011-08-09 | Tokyo Electron Limited | Low-temperature dielectric film formation by chemical vapor deposition |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
JP5604316B2 (ja) * | 2011-01-19 | 2014-10-08 | 株式会社アルバック | 成膜方法 |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
TW201319299A (zh) * | 2011-09-13 | 2013-05-16 | Applied Materials Inc | 用於低溫電漿輔助沉積的活化矽前驅物 |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
JP6022276B2 (ja) * | 2012-09-20 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
KR102207992B1 (ko) | 2012-10-23 | 2021-01-26 | 램 리써치 코포레이션 | 서브-포화된 원자층 증착 및 등각막 증착 |
SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 感受性基材上にフィルムを蒸着するための方法 |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9824881B2 (en) * | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US20150024152A1 (en) * | 2013-07-19 | 2015-01-22 | Agilent Technologies, Inc. | Metal components with inert vapor phase coating on internal surfaces |
US10767259B2 (en) | 2013-07-19 | 2020-09-08 | Agilent Technologies, Inc. | Components with an atomic layer deposition coating and methods of producing the same |
JP6113626B2 (ja) * | 2013-10-21 | 2017-04-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
JP5883049B2 (ja) * | 2014-03-04 | 2016-03-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
JP6560924B2 (ja) | 2015-07-29 | 2019-08-14 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
US10121655B2 (en) | 2015-11-20 | 2018-11-06 | Applied Materials, Inc. | Lateral plasma/radical source |
US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
US10629435B2 (en) | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
US10170322B1 (en) | 2017-11-16 | 2019-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition based process for contact barrier layer |
US11404275B2 (en) | 2018-03-02 | 2022-08-02 | Lam Research Corporation | Selective deposition using hydrolysis |
US10971357B2 (en) * | 2018-10-04 | 2021-04-06 | Applied Materials, Inc. | Thin film treatment process |
US10950428B1 (en) | 2019-08-30 | 2021-03-16 | Mattson Technology, Inc. | Method for processing a workpiece |
KR20220081905A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 증착용 실리콘 전구체 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03134175A (ja) * | 1989-10-19 | 1991-06-07 | Res Dev Corp Of Japan | ディジタルcvd方法 |
JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2008518092A (ja) * | 2004-08-14 | 2008-05-29 | アールスリーティー・ゲーエムベーハー・ラピッド・リアクティブ・ラジカルス・テクノロジ | 励起された、および/またはイオン化された粒子をプラズマ内で発生するための装置 |
Family Cites Families (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4363828A (en) | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
JPS57209810A (en) | 1981-06-17 | 1982-12-23 | Asahi Chem Ind Co Ltd | Preparation of silicon nitride |
JPS5958819A (ja) | 1982-09-29 | 1984-04-04 | Hitachi Ltd | 薄膜形成方法 |
JPS5978918A (ja) | 1982-10-26 | 1984-05-08 | Mitsui Toatsu Chem Inc | 広バンドギャップアモルファスシリコン膜の形成方法 |
JPS5978919A (ja) | 1982-10-26 | 1984-05-08 | Mitsui Toatsu Chem Inc | アモルフアスシリコン膜の形成方法 |
JPS5989407A (ja) | 1982-11-15 | 1984-05-23 | Mitsui Toatsu Chem Inc | アモルフアスシリコン膜の形成方法 |
JPS6043485A (ja) | 1983-08-19 | 1985-03-08 | Mitsui Toatsu Chem Inc | アモルフアスシリコン膜の形成方法 |
JPS61153277A (ja) | 1984-12-27 | 1986-07-11 | Agency Of Ind Science & Technol | 微結晶シリコン薄膜の製造方法 |
JPH0650730B2 (ja) | 1985-09-30 | 1994-06-29 | 三井東圧化学株式会社 | 半導体薄膜の製造方法 |
JPS633414A (ja) | 1986-06-24 | 1988-01-08 | Agency Of Ind Science & Technol | シリコン膜の製造方法 |
JP2592238B2 (ja) | 1986-06-24 | 1997-03-19 | セイコー電子工業株式会社 | 薄膜トランジスタの製造方法 |
US4684542A (en) | 1986-08-11 | 1987-08-04 | International Business Machines Corporation | Low pressure chemical vapor deposition of tungsten silicide |
JP2835723B2 (ja) | 1988-02-26 | 1998-12-14 | 富士通株式会社 | キャパシタ及びキャパシタの製造方法 |
JPH01268064A (ja) | 1988-04-20 | 1989-10-25 | Hitachi Ltd | 多結晶シリコン薄膜の形成方法 |
JPH02225399A (ja) | 1988-11-11 | 1990-09-07 | Fujitsu Ltd | エピタキシャル成長方法および成長装置 |
JPH02155225A (ja) | 1988-12-08 | 1990-06-14 | Mitsui Toatsu Chem Inc | 非晶質半導体薄膜の形成方法 |
JP2947828B2 (ja) | 1989-09-04 | 1999-09-13 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5214002A (en) | 1989-10-25 | 1993-05-25 | Agency Of Industrial Science And Technology | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step |
JPH03185817A (ja) | 1989-12-15 | 1991-08-13 | Seiko Epson Corp | 半導体膜の形成方法 |
JPH03187215A (ja) | 1989-12-15 | 1991-08-15 | Sharp Corp | シリコン薄膜の製造方法 |
JP2917392B2 (ja) | 1990-04-10 | 1999-07-12 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US5316844A (en) | 1990-04-16 | 1994-05-31 | Hoya Electronics Corporation | Magnetic recording medium comprising an aluminum alloy substrate, now magnetic underlayers, magnetic layer, protective layer, particulate containing protective layer and lubricant layer |
JP3193402B2 (ja) | 1990-08-31 | 2001-07-30 | 株式会社日立製作所 | 半導体装置の製造方法 |
KR100209856B1 (ko) | 1990-08-31 | 1999-07-15 | 가나이 쓰도무 | 반도체장치의 제조방법 |
SG63578A1 (en) | 1990-11-16 | 1999-03-30 | Seiko Epson Corp | Thin film semiconductor device process for fabricating the same and silicon film |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US5356673A (en) | 1991-03-18 | 1994-10-18 | Jet Process Corporation | Evaporation system and method for gas jet deposition of thin film materials |
JP3200863B2 (ja) | 1991-04-23 | 2001-08-20 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US5695819A (en) | 1991-08-09 | 1997-12-09 | Applied Materials, Inc. | Method of enhancing step coverage of polysilicon deposits |
JP3121131B2 (ja) | 1991-08-09 | 2000-12-25 | アプライド マテリアルズ インコーポレイテッド | 低温高圧のシリコン蒸着方法 |
US5614257A (en) | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
JP3181357B2 (ja) | 1991-08-19 | 2001-07-03 | 株式会社東芝 | 半導体薄膜の形成方法および半導体装置の製造方法 |
JPH0562911A (ja) | 1991-09-04 | 1993-03-12 | Fujitsu Ltd | 半導体超格子の製造方法 |
US5352636A (en) | 1992-01-16 | 1994-10-04 | Applied Materials, Inc. | In situ method for cleaning silicon surface and forming layer thereon in same chamber |
JP2740087B2 (ja) | 1992-08-15 | 1998-04-15 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
DE4419074C2 (de) | 1993-06-03 | 1998-07-02 | Micron Semiconductor Inc | Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung |
US5648293A (en) | 1993-07-22 | 1997-07-15 | Nec Corporation | Method of growing an amorphous silicon film |
US5471330A (en) | 1993-07-29 | 1995-11-28 | Honeywell Inc. | Polysilicon pixel electrode |
JP2641385B2 (ja) | 1993-09-24 | 1997-08-13 | アプライド マテリアルズ インコーポレイテッド | 膜形成方法 |
US6083810A (en) | 1993-11-15 | 2000-07-04 | Lucent Technologies | Integrated circuit fabrication process |
US5656531A (en) | 1993-12-10 | 1997-08-12 | Micron Technology, Inc. | Method to form hemi-spherical grain (HSG) silicon from amorphous silicon |
JPH07249618A (ja) | 1994-03-14 | 1995-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
US5698771A (en) | 1995-03-30 | 1997-12-16 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Varying potential silicon carbide gas sensor |
JP3169337B2 (ja) | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US6161498A (en) | 1995-09-14 | 2000-12-19 | Tokyo Electron Limited | Plasma processing device and a method of plasma process |
US5869389A (en) | 1996-01-18 | 1999-02-09 | Micron Technology, Inc. | Semiconductor processing method of providing a doped polysilicon layer |
JP3109570B2 (ja) | 1996-01-27 | 2000-11-20 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
US5786027A (en) | 1996-02-14 | 1998-07-28 | Micron Technology, Inc. | Method for depositing polysilicon with discontinuous grain boundaries |
US5789030A (en) | 1996-03-18 | 1998-08-04 | Micron Technology, Inc. | Method for depositing doped amorphous or polycrystalline silicon on a substrate |
JPH09270421A (ja) | 1996-04-01 | 1997-10-14 | Mitsubishi Electric Corp | 表面処理装置および表面処理方法 |
JP2795313B2 (ja) | 1996-05-08 | 1998-09-10 | 日本電気株式会社 | 容量素子及びその製造方法 |
JPH1197667A (ja) | 1997-09-24 | 1999-04-09 | Sharp Corp | 超微粒子あるいは超細線の形成方法およびこの形成方法による超微粒子あるいは超細線を用いた半導体素子 |
US6228181B1 (en) | 1997-10-02 | 2001-05-08 | Shigeo Yamamoto | Making epitaxial semiconductor device |
KR100268936B1 (ko) | 1997-12-16 | 2000-10-16 | 김영환 | 반도체 소자의 양자점 형성 방법 |
US6027705A (en) | 1998-01-08 | 2000-02-22 | Showa Denko K.K. | Method for producing a higher silane |
JP3854731B2 (ja) | 1998-03-30 | 2006-12-06 | シャープ株式会社 | 微細構造の製造方法 |
KR100363083B1 (ko) | 1999-01-20 | 2002-11-30 | 삼성전자 주식회사 | 반구형 그레인 커패시터 및 그 형성방법 |
JPH11317530A (ja) | 1999-02-22 | 1999-11-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US6197669B1 (en) | 1999-04-15 | 2001-03-06 | Taiwan Semicondcutor Manufacturing Company | Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process |
EP1965431A2 (en) | 1999-06-22 | 2008-09-03 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and method for fabricating the same |
JP4192353B2 (ja) | 1999-09-21 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6337289B1 (en) * | 1999-09-24 | 2002-01-08 | Applied Materials. Inc | Method and apparatus for integrating a metal nitride film in a semiconductor device |
US6613695B2 (en) | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
EP1421607A2 (en) | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Improved process for deposition of semiconductor films |
WO2004009861A2 (en) | 2002-07-19 | 2004-01-29 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
US6809370B1 (en) * | 2003-07-31 | 2004-10-26 | Texas Instruments Incorporated | High-k gate dielectric with uniform nitrogen profile and methods for making the same |
US7132338B2 (en) | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
-
2005
- 2005-08-24 US US11/212,503 patent/US7629270B2/en active Active
- 2005-08-25 JP JP2007530121A patent/JP4685104B2/ja active Active
- 2005-08-25 WO PCT/US2005/030243 patent/WO2006026350A2/en active Application Filing
- 2005-08-25 KR KR1020077003856A patent/KR101193628B1/ko active IP Right Grant
- 2005-08-26 TW TW094129189A patent/TW200618109A/zh unknown
- 2005-08-26 JP JP2005245398A patent/JP2006086521A/ja not_active Withdrawn
- 2005-08-26 KR KR1020050078919A patent/KR20060050712A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03134175A (ja) * | 1989-10-19 | 1991-06-07 | Res Dev Corp Of Japan | ディジタルcvd方法 |
JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2008518092A (ja) * | 2004-08-14 | 2008-05-29 | アールスリーティー・ゲーエムベーハー・ラピッド・リアクティブ・ラジカルス・テクノロジ | 励起された、および/またはイオン化された粒子をプラズマ内で発生するための装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2006026350A2 (en) | 2006-03-09 |
TW200618109A (en) | 2006-06-01 |
JP2008511993A (ja) | 2008-04-17 |
KR20060050712A (ko) | 2006-05-19 |
KR20070051279A (ko) | 2007-05-17 |
WO2006026350A3 (en) | 2006-10-12 |
KR101193628B1 (ko) | 2012-10-24 |
JP2006086521A (ja) | 2006-03-30 |
US7629270B2 (en) | 2009-12-08 |
US20060110943A1 (en) | 2006-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4685104B2 (ja) | 低温シリコン化合物堆積 | |
US7294582B2 (en) | Low temperature silicon compound deposition | |
US7629267B2 (en) | High stress nitride film and method for formation thereof | |
US7964513B2 (en) | Method to form ultra high quality silicon-containing compound layers | |
KR102451694B1 (ko) | 기판 상의 구조물 형성 방법 | |
US9349587B2 (en) | Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus | |
US9984868B2 (en) | PEALD of films comprising silicon nitride | |
US7919416B2 (en) | Method of forming conformal dielectric film having Si-N bonds by PECVD | |
US6348420B1 (en) | Situ dielectric stacks | |
US7405453B2 (en) | Incorporation of nitrogen into high k dielectric film | |
US8409988B2 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
JP5294694B2 (ja) | シリコン及びチタン窒化物のインサイチュ蒸着 | |
KR101732187B1 (ko) | 플라즈마 강화된 화학기상 증착법에 의해 규소-질소 결합을 갖는 등각성 유전체 막을 형성하는 방법 | |
KR20060054387A (ko) | 증착 전 게르마늄 표면 처리 방법 | |
JP2009545138A (ja) | 金属シリケート膜のald | |
KR20090016403A (ko) | 실리콘 산화막 증착 방법 | |
WO2017158848A1 (ja) | 半導体装置の製造方法、基板処理装置、および記録媒体 | |
KR20030041088A (ko) | 유전체 박막 제조 방법 및 시스템 | |
KR101046757B1 (ko) | 반도체소자의 캐패시터 및 그 제조 방법 | |
WO2022245641A1 (en) | Flowable cvd film defect reduction | |
JP2004186210A (ja) | 窒素含有ケイ素化合物膜の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090703 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20091210 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20091210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110125 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110209 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140218 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4685104 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |