JP5604316B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
- Publication number
- JP5604316B2 JP5604316B2 JP2011008849A JP2011008849A JP5604316B2 JP 5604316 B2 JP5604316 B2 JP 5604316B2 JP 2011008849 A JP2011008849 A JP 2011008849A JP 2011008849 A JP2011008849 A JP 2011008849A JP 5604316 B2 JP5604316 B2 JP 5604316B2
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- JP
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- Prior art keywords
- gas
- film
- reaction
- reaction chamber
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000151 deposition Methods 0.000 title description 3
- 239000007789 gas Substances 0.000 claims description 75
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 35
- 239000012495 reaction gas Substances 0.000 claims description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 29
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 109
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000009751 slip forming Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229960001730 nitrous oxide Drugs 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (2)
- 反応室に処理すべき基板を設置し、真空雰囲気中にてシリコンを含む原料ガスと窒素を含む一の反応ガスとを反応室内に導入し、放電用の高周波電力を投入してプラズマCVD法にて窒化シリコン膜を成膜する第1工程と、
前記一の反応ガスを供給しながらプラズマ放電を維持した状態で、反応室内の窒素分圧を高める第2工程と、
前記一の反応ガスの供給のみを停止し、酸素を含む他の反応ガスを反応室内に供給してプラズマCVD法にて酸化シリコン膜を成膜する第3工程とを含むことを特徴とする成膜方法。 - 前記第2工程を、反応室からの排気速度を低下させて行うことを特徴とする請求項1記載の成膜方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011008849A JP5604316B2 (ja) | 2011-01-19 | 2011-01-19 | 成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011008849A JP5604316B2 (ja) | 2011-01-19 | 2011-01-19 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012151278A JP2012151278A (ja) | 2012-08-09 |
JP5604316B2 true JP5604316B2 (ja) | 2014-10-08 |
Family
ID=46793266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011008849A Active JP5604316B2 (ja) | 2011-01-19 | 2011-01-19 | 成膜方法 |
Country Status (1)
Country | Link |
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JP (1) | JP5604316B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6232219B2 (ja) * | 2013-06-28 | 2017-11-15 | 東京エレクトロン株式会社 | 多層保護膜の形成方法 |
US20160268299A1 (en) | 2015-03-13 | 2016-09-15 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
CN114975113B (zh) * | 2022-04-25 | 2022-12-13 | 上海陛通半导体能源科技股份有限公司 | 形成氧化硅和氮化硅复合薄膜的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227891A (ja) * | 1995-02-21 | 1996-09-03 | Casio Comput Co Ltd | 絶縁膜の形成方法 |
JP4955848B2 (ja) * | 2000-02-28 | 2012-06-20 | エルジー ディスプレイ カンパニー リミテッド | 電子素子用基板製造方法 |
JP3989666B2 (ja) * | 2000-03-09 | 2007-10-10 | セイコーエプソン株式会社 | アクティブマトリクス基板とその製造方法、及び電気光学装置とその製造方法 |
JP2002368084A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US7629270B2 (en) * | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
JP4320652B2 (ja) * | 2005-09-08 | 2009-08-26 | エプソンイメージングデバイス株式会社 | 層間絶縁膜の形成方法及び基板 |
JP2007165395A (ja) * | 2005-12-09 | 2007-06-28 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2010180434A (ja) * | 2009-02-03 | 2010-08-19 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
-
2011
- 2011-01-19 JP JP2011008849A patent/JP5604316B2/ja active Active
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Publication number | Publication date |
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JP2012151278A (ja) | 2012-08-09 |
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