KR101183850B1 - 노광 장치 및 노광 방법, 디바이스 제조 방법 - Google Patents

노광 장치 및 노광 방법, 디바이스 제조 방법 Download PDF

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Publication number
KR101183850B1
KR101183850B1 KR1020067006560A KR20067006560A KR101183850B1 KR 101183850 B1 KR101183850 B1 KR 101183850B1 KR 1020067006560 A KR1020067006560 A KR 1020067006560A KR 20067006560 A KR20067006560 A KR 20067006560A KR 101183850 B1 KR101183850 B1 KR 101183850B1
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South Korea
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substrate
liquid
stage
board
dummy
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Expired - Fee Related
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KR1020067006560A
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English (en)
Korean (ko)
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KR20060120651A (ko
Inventor
마사히코 야스다
다카히로 마사다
유호 가나야
다다시 나가야마
겐이치 시라이시
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020067006560A 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법 Expired - Fee Related KR101183850B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003350628 2003-10-09
JPJP-P-2003-00350628 2003-10-09
JPJP-P-2004-00045103 2004-02-20
JP2004045103 2004-02-20
PCT/JP2004/015332 WO2005036624A1 (ja) 2003-10-09 2004-10-12 露光装置及び露光方法、デバイス製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020117024988A Division KR101183851B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020127013752A Division KR101261774B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20060120651A KR20060120651A (ko) 2006-11-27
KR101183850B1 true KR101183850B1 (ko) 2012-09-18

Family

ID=34436914

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020127033864A Expired - Fee Related KR101476903B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020067006560A Expired - Fee Related KR101183850B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020187005006A Abandoned KR20180021920A (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020127013752A Expired - Fee Related KR101261774B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020117024988A Expired - Fee Related KR101183851B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020167009409A Expired - Fee Related KR101832713B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020137022692A Expired - Fee Related KR101523456B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020147016498A Expired - Fee Related KR101613062B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Family Applications Before (1)

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KR1020127033864A Expired - Fee Related KR101476903B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020187005006A Abandoned KR20180021920A (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020127013752A Expired - Fee Related KR101261774B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020117024988A Expired - Fee Related KR101183851B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020167009409A Expired - Fee Related KR101832713B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020137022692A Expired - Fee Related KR101523456B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020147016498A Expired - Fee Related KR101613062B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Country Status (10)

Country Link
US (5) US8130361B2 (enExample)
EP (6) EP3206083B1 (enExample)
JP (9) JP5136565B2 (enExample)
KR (8) KR101476903B1 (enExample)
CN (1) CN102360167B (enExample)
HK (1) HK1259349A1 (enExample)
IL (1) IL174854A (enExample)
SG (3) SG147431A1 (enExample)
TW (4) TW201738932A (enExample)
WO (1) WO2005036624A1 (enExample)

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TW201738932A (zh) * 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
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KR101309428B1 (ko) * 2004-02-04 2013-09-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
CN100462845C (zh) * 2005-11-11 2009-02-18 台湾积体电路制造股份有限公司 具有晶圆密封机构的改良型浸润式微影系统及其方法
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JP4704221B2 (ja) * 2006-01-26 2011-06-15 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
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JP2008283052A (ja) * 2007-05-11 2008-11-20 Toshiba Corp 液浸露光装置および半導体装置の製造方法
JP5266855B2 (ja) * 2008-04-21 2013-08-21 日本電気株式会社 光学式外観検査装置
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JP2009295933A (ja) * 2008-06-09 2009-12-17 Canon Inc ダミー露光基板及びその製造方法、液浸露光装置、並びに、デバイス製造方法
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JP2012004490A (ja) * 2010-06-21 2012-01-05 Tokyo Electron Ltd 基板搬送装置及び基板搬送方法
US9083863B2 (en) 2012-04-20 2015-07-14 Hewlett-Packard Development Company, L.P. Alignment system for a digital image capture device
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US9217917B2 (en) * 2014-02-27 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Three-direction alignment mark
HK1246871A1 (en) * 2015-02-23 2018-09-14 Nikon Corporation Measurement device, lithography system and exposure device, and management method, superposition measurement method and device manufacturing method
JP6506153B2 (ja) * 2015-10-27 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 変位検出装置および変位検出方法ならびに基板処理装置
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP6307730B1 (ja) * 2016-09-29 2018-04-11 株式会社新川 半導体装置の製造方法、及び実装装置
JP2018116036A (ja) * 2017-01-13 2018-07-26 株式会社エンプラス マーカ搭載用ユニット
KR102161185B1 (ko) * 2017-02-24 2020-09-29 어플라이드 머티어리얼스, 인코포레이티드 기판의 진공 프로세싱을 위한 장치, 기판의 진공 프로세싱을 위한 시스템, 및 진공 챔버에서의 기판 캐리어 및 마스크 캐리어의 운송을 위한 방법
JP7297878B2 (ja) * 2018-10-01 2023-06-26 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置におけるオブジェクト
JP2022502709A (ja) 2018-10-05 2022-01-11 エーエスエムエル ネザーランズ ビー．ブイ． 冷却フードの高速温度制御のためのガス混合
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KR102227885B1 (ko) * 2020-06-02 2021-03-15 주식회사 기가레인 패턴 정렬 가능한 전사 장치
DE102020216518B4 (de) * 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas

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