KR101109883B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101109883B1
KR101109883B1 KR1020050013190A KR20050013190A KR101109883B1 KR 101109883 B1 KR101109883 B1 KR 101109883B1 KR 1020050013190 A KR1020050013190 A KR 1020050013190A KR 20050013190 A KR20050013190 A KR 20050013190A KR 101109883 B1 KR101109883 B1 KR 101109883B1
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South Korea
Prior art keywords
delete delete
memory
mos transistor
circuit
voltage
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Expired - Fee Related
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KR1020050013190A
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English (en)
Korean (ko)
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KR20060042055A (ko
Inventor
겐이찌 오사다
리이찌로 다께무라
노리까쯔 다까우라
노조무 마쯔자끼
다까유끼 가와하라
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20060042055A publication Critical patent/KR20060042055A/ko
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Publication of KR101109883B1 publication Critical patent/KR101109883B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
KR1020050013190A 2004-02-20 2005-02-17 반도체 장치 Expired - Fee Related KR101109883B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004043948 2004-02-20
JPJP-P-2004-00043948 2004-02-20
JPJP-P-2005-00001979 2005-01-07
JP2005001979A JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110062555A Division KR101149273B1 (ko) 2004-02-20 2011-06-27 반도체 장치

Publications (2)

Publication Number Publication Date
KR20060042055A KR20060042055A (ko) 2006-05-12
KR101109883B1 true KR101109883B1 (ko) 2012-03-13

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020050013190A Expired - Fee Related KR101109883B1 (ko) 2004-02-20 2005-02-17 반도체 장치
KR1020110062555A Expired - Fee Related KR101149273B1 (ko) 2004-02-20 2011-06-27 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110062555A Expired - Fee Related KR101149273B1 (ko) 2004-02-20 2011-06-27 반도체 장치

Country Status (5)

Country Link
US (2) US7206216B2 (enExample)
JP (1) JP4646636B2 (enExample)
KR (2) KR101109883B1 (enExample)
CN (2) CN101587746B (enExample)
TW (1) TW200534469A (enExample)

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Also Published As

Publication number Publication date
CN101587746A (zh) 2009-11-25
JP4646636B2 (ja) 2011-03-09
KR101149273B1 (ko) 2012-05-25
US20070159871A1 (en) 2007-07-12
TW200534469A (en) 2005-10-16
KR20110090861A (ko) 2011-08-10
JP2005267837A (ja) 2005-09-29
KR20060042055A (ko) 2006-05-12
CN101587746B (zh) 2011-01-26
US7206216B2 (en) 2007-04-17
US20050185445A1 (en) 2005-08-25
CN1658328A (zh) 2005-08-24
US7385838B2 (en) 2008-06-10
CN100533596C (zh) 2009-08-26
TWI359491B (enExample) 2012-03-01

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