CN101587746B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101587746B
CN101587746B CN2009101513831A CN200910151383A CN101587746B CN 101587746 B CN101587746 B CN 101587746B CN 2009101513831 A CN2009101513831 A CN 2009101513831A CN 200910151383 A CN200910151383 A CN 200910151383A CN 101587746 B CN101587746 B CN 101587746B
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China
Prior art keywords
semiconductor device
bit lines
memory
lines
node
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Expired - Fee Related
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CN2009101513831A
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English (en)
Chinese (zh)
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CN101587746A (zh
Inventor
长田健一
竹村理一郎
高浦则克
松崎望
河原尊之
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NEC Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN101587746A publication Critical patent/CN101587746A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
CN2009101513831A 2004-02-20 2005-02-18 半导体器件 Expired - Fee Related CN101587746B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2004043948 2004-02-20
JP2004043948 2004-02-20
JP2004-043948 2004-02-20
JP2005001979 2005-01-07
JP2005-001979 2005-01-07
JP2005001979A JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100093026A Division CN100533596C (zh) 2004-02-20 2005-02-18 半导体器件

Publications (2)

Publication Number Publication Date
CN101587746A CN101587746A (zh) 2009-11-25
CN101587746B true CN101587746B (zh) 2011-01-26

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009101513831A Expired - Fee Related CN101587746B (zh) 2004-02-20 2005-02-18 半导体器件
CNB2005100093026A Expired - Fee Related CN100533596C (zh) 2004-02-20 2005-02-18 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2005100093026A Expired - Fee Related CN100533596C (zh) 2004-02-20 2005-02-18 半导体器件

Country Status (5)

Country Link
US (2) US7206216B2 (enExample)
JP (1) JP4646636B2 (enExample)
KR (2) KR101109883B1 (enExample)
CN (2) CN101587746B (enExample)
TW (1) TW200534469A (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498493B1 (ko) * 2003-04-04 2005-07-01 삼성전자주식회사 저전류 고속 상변화 메모리 및 그 구동 방식
JP4646636B2 (ja) * 2004-02-20 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US8335103B2 (en) * 2004-09-30 2012-12-18 Nxp B.V. Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
KR100657944B1 (ko) * 2005-01-12 2006-12-14 삼성전자주식회사 상전이 램 동작 방법
US8036013B2 (en) * 2005-03-30 2011-10-11 Ovonyx, Inc. Using higher current to read a triggered phase change memory
US7453715B2 (en) * 2005-03-30 2008-11-18 Ovonyx, Inc. Reading a phase change memory
US20060284156A1 (en) * 2005-06-16 2006-12-21 Thomas Happ Phase change memory cell defined by imprint lithography
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
JP4867297B2 (ja) * 2005-11-08 2012-02-01 ソニー株式会社 記憶装置のベリファイ方法
KR100738092B1 (ko) * 2006-01-05 2007-07-12 삼성전자주식회사 상전이 메모리 소자의 멀티-비트 동작 방법
US7859896B2 (en) 2006-02-02 2010-12-28 Renesas Electronics Corporation Semiconductor device
JP4922645B2 (ja) * 2006-03-31 2012-04-25 ルネサスエレクトロニクス株式会社 半導体装置
KR100763253B1 (ko) * 2006-05-30 2007-10-04 삼성전자주식회사 반도체 메모리 장치 및 그에 따른 프리차아지 방법
WO2007141865A1 (ja) * 2006-06-08 2007-12-13 Renesas Technology Corp. 半導体装置及びその製造方法
JP5072843B2 (ja) * 2006-07-21 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置
EP1898425A1 (fr) * 2006-09-05 2008-03-12 Stmicroelectronics Sa Mémoire à changement de phase comprenant un décodeur de colonne basse tension
WO2008029446A1 (fr) * 2006-09-05 2008-03-13 Fujitsu Limited Procédé d'écriture d'appareil de stockage a semi-conducteur non volatil
US7885102B2 (en) 2006-09-15 2011-02-08 Renesas Electronics Corporation Semiconductor device
WO2008035392A1 (en) * 2006-09-19 2008-03-27 Renesas Technology Corp. Semiconductor integrated circuit device
KR100827703B1 (ko) * 2006-12-14 2008-05-07 삼성전자주식회사 상변화메모리 장치의 테스트 방법
KR100843144B1 (ko) * 2006-12-20 2008-07-02 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
US8139432B2 (en) * 2006-12-27 2012-03-20 Samsung Electronics Co., Ltd. Variable resistance memory device and system thereof
KR100886215B1 (ko) * 2006-12-27 2009-03-02 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
US7626860B2 (en) * 2007-03-23 2009-12-01 International Business Machines Corporation Optimized phase change write method
US7817454B2 (en) 2007-04-03 2010-10-19 Micron Technology, Inc. Variable resistance memory with lattice array using enclosing transistors
KR100843242B1 (ko) * 2007-04-04 2008-07-02 삼성전자주식회사 플래시 메모리 장치 및 그 구동방법
JP5413938B2 (ja) * 2007-05-08 2014-02-12 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその書き込み制御方法
US7929332B2 (en) * 2007-06-29 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
WO2009013819A1 (ja) * 2007-07-25 2009-01-29 Renesas Technology Corp. 半導体記憶装置
JP2009032349A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 不揮発性メモリ制御システム
US8179739B2 (en) * 2007-08-10 2012-05-15 Renesas Electronics Corporation Semiconductor device and its manufacturing method
JP5291311B2 (ja) * 2007-08-31 2013-09-18 株式会社アイ・オー・データ機器 Ｕｓｂストレージシステムおよびデータ転送制御用のプログラム
KR101384357B1 (ko) * 2007-11-20 2014-04-15 삼성전자주식회사 상 변화 메모리 장치 및 이의 비트라인 디스차지 방법
US7791933B2 (en) * 2007-12-21 2010-09-07 International Business Machines Corporation Optimized phase change write method
US20090046499A1 (en) * 2008-02-05 2009-02-19 Qimonda Ag Integrated circuit including memory having limited read
KR101452957B1 (ko) * 2008-02-21 2014-10-21 삼성전자주식회사 리드 와일 라이트 동작시 커플링 노이즈를 방지할 수 있는상 변화 메모리 장치
DE102008015585B4 (de) 2008-03-19 2022-05-25 Samsung Electronics Co., Ltd. Nichtflüchtiges Speicherbauelement
US7990761B2 (en) 2008-03-31 2011-08-02 Ovonyx, Inc. Immunity of phase change material to disturb in the amorphous phase
EP2107571B1 (en) * 2008-04-03 2012-04-25 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR101415877B1 (ko) 2008-05-19 2014-07-07 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치
US8094485B2 (en) 2008-05-22 2012-01-10 Panasonic Corporation Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
JP5221222B2 (ja) * 2008-06-25 2013-06-26 株式会社東芝 半導体記憶装置
WO2010004652A1 (ja) * 2008-07-11 2010-01-14 株式会社ルネサステクノロジ 相変化メモリ、半導体装置及びｒｆｉｄモジュール
KR101412941B1 (ko) 2008-07-29 2014-06-26 누모닉스 비.브이. 프로그래밍 후 복구 지연을 감소시키기 위한 상-변화 셀 판독용 포텐셜 극성 반전
WO2010021134A1 (ja) 2008-08-20 2010-02-25 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
US8228714B2 (en) * 2008-09-09 2012-07-24 Qualcomm Incorporated Memory device for resistance-based memory applications
TWI453744B (zh) * 2008-10-09 2014-09-21 Micron Technology Inc 反轉極性以讀取相變單元致使縮短程式化後之延遲
JP5127661B2 (ja) * 2008-10-10 2013-01-23 株式会社東芝 半導体記憶装置
JP5127665B2 (ja) * 2008-10-23 2013-01-23 株式会社東芝 半導体記憶装置
KR101537316B1 (ko) * 2008-11-14 2015-07-16 삼성전자주식회사 상 변화 메모리 장치
JP2010123209A (ja) * 2008-11-20 2010-06-03 Elpida Memory Inc メモリ装置及びその書き込み方法
KR20100064714A (ko) * 2008-12-05 2010-06-15 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
US8194441B2 (en) * 2010-09-23 2012-06-05 Micron Technology, Inc. Phase change memory state determination using threshold edge detection
US8885399B2 (en) * 2011-03-29 2014-11-11 Nxp B.V. Phase change memory (PCM) architecture and a method for writing into PCM architecture
TW201417102A (zh) * 2012-10-23 2014-05-01 Ind Tech Res Inst 電阻式記憶體裝置
JP5647722B2 (ja) * 2013-11-07 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US9530523B2 (en) * 2014-06-25 2016-12-27 Intel Corporation Thermal disturb as heater in cross-point memory
JP6426940B2 (ja) * 2014-08-19 2018-11-21 ルネサスエレクトロニクス株式会社 半導体装置及びフォーミング方法
KR102514045B1 (ko) * 2016-04-21 2023-03-24 삼성전자주식회사 저항성 메모리 장치 및 이를 포함하는 메모리 시스템
IT201600098496A1 (it) 2016-09-30 2018-03-30 St Microelectronics Srl Decodificatore di indirizzo per una matrice di memoria non volatile utilizzante transistori mos di selezione
KR102634322B1 (ko) * 2016-10-10 2024-02-07 삼성전자주식회사 양방향 스위치를 갖는 가변 저항 메모리 장치, 메모리 시스템, 그리고 그것의 동작 방법
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
US10311921B1 (en) * 2017-12-29 2019-06-04 Sandisk Technologies Llc Multiple-mode current sources for sense operations
US10727275B2 (en) * 2018-05-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Memory layout for reduced line loading
CN111276177B (zh) * 2020-02-21 2022-05-03 京东方科技集团股份有限公司 移位寄存器及其驱动方法、栅极驱动电路、显示装置
WO2023212887A1 (en) * 2022-05-06 2023-11-09 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd Memory peripheral circuit having recessed channel transistors with elevated sources/drains and method for forming thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1372689A (zh) * 1999-09-02 2002-10-02 先进微装置公司 Eeprom使用的单一晶体管存储单元
CN1385860A (zh) * 2001-05-16 2002-12-18 三菱电机株式会社 具有磁性隧道接合部的薄膜磁体存储装置
CN1467743A (zh) * 2002-07-11 2004-01-14 ������������ʽ���� 基于选择存储单元与基准单元的电阻差读出数据的存储器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172761A (en) * 1981-04-17 1982-10-23 Hitachi Ltd Semiconductor integrated circuit
JPH0729996A (ja) * 1993-07-12 1995-01-31 Seiko Epson Corp 半導体記憶装置
JP2001015704A (ja) * 1999-06-29 2001-01-19 Hitachi Ltd 半導体集積回路
TW584976B (en) * 2000-11-09 2004-04-21 Sanyo Electric Co Magnetic memory device
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
JP2003100084A (ja) 2001-09-27 2003-04-04 Toshiba Corp 相変化型不揮発性記憶装置
JP2003179162A (ja) * 2001-12-12 2003-06-27 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7116593B2 (en) * 2002-02-01 2006-10-03 Hitachi, Ltd. Storage device
JP4294256B2 (ja) * 2002-03-28 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
JP4282314B2 (ja) * 2002-06-25 2009-06-17 シャープ株式会社 記憶装置
US6903965B2 (en) * 2002-07-18 2005-06-07 Renesas Technology Corp. Thin film magnetic memory device permitting high precision data read
JP4376495B2 (ja) * 2002-08-13 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体メモリ
US6903982B2 (en) * 2002-10-10 2005-06-07 Infineon Technologies Ag Bit line segmenting in random access memories
JP4355136B2 (ja) * 2002-12-05 2009-10-28 シャープ株式会社 不揮発性半導体記憶装置及びその読み出し方法
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
JP4322645B2 (ja) * 2003-11-28 2009-09-02 株式会社日立製作所 半導体集積回路装置
JP4385778B2 (ja) * 2004-01-29 2009-12-16 ソニー株式会社 記憶装置
JP4646636B2 (ja) * 2004-02-20 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US7064670B2 (en) 2004-02-25 2006-06-20 Dmatek, Ltd. Method and apparatus for portable transmitting devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1372689A (zh) * 1999-09-02 2002-10-02 先进微装置公司 Eeprom使用的单一晶体管存储单元
CN1385860A (zh) * 2001-05-16 2002-12-18 三菱电机株式会社 具有磁性隧道接合部的薄膜磁体存储装置
CN1467743A (zh) * 2002-07-11 2004-01-14 ������������ʽ���� 基于选择存储单元与基准单元的电阻差读出数据的存储器

Also Published As

Publication number Publication date
CN101587746A (zh) 2009-11-25
JP4646636B2 (ja) 2011-03-09
KR101149273B1 (ko) 2012-05-25
US20070159871A1 (en) 2007-07-12
TW200534469A (en) 2005-10-16
KR20110090861A (ko) 2011-08-10
JP2005267837A (ja) 2005-09-29
KR20060042055A (ko) 2006-05-12
US7206216B2 (en) 2007-04-17
US20050185445A1 (en) 2005-08-25
CN1658328A (zh) 2005-08-24
KR101109883B1 (ko) 2012-03-13
US7385838B2 (en) 2008-06-10
CN100533596C (zh) 2009-08-26
TWI359491B (enExample) 2012-03-01

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Owner name: NEC CORP.

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