JP4646636B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4646636B2
JP4646636B2 JP2005001979A JP2005001979A JP4646636B2 JP 4646636 B2 JP4646636 B2 JP 4646636B2 JP 2005001979 A JP2005001979 A JP 2005001979A JP 2005001979 A JP2005001979 A JP 2005001979A JP 4646636 B2 JP4646636 B2 JP 4646636B2
Authority
JP
Japan
Prior art keywords
mos transistor
memory
circuit
source
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005001979A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005267837A (ja
JP2005267837A5 (enExample
Inventor
健一 長田
理一郎 竹村
則克 高浦
望 松崎
尊之 河原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2005001979A priority Critical patent/JP4646636B2/ja
Priority to TW094101903A priority patent/TW200534469A/zh
Priority to US11/057,682 priority patent/US7206216B2/en
Priority to KR1020050013190A priority patent/KR101109883B1/ko
Priority to CNB2005100093026A priority patent/CN100533596C/zh
Priority to CN2009101513831A priority patent/CN101587746B/zh
Publication of JP2005267837A publication Critical patent/JP2005267837A/ja
Priority to US11/715,918 priority patent/US7385838B2/en
Publication of JP2005267837A5 publication Critical patent/JP2005267837A5/ja
Application granted granted Critical
Publication of JP4646636B2 publication Critical patent/JP4646636B2/ja
Priority to KR1020110062555A priority patent/KR101149273B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2005001979A 2004-02-20 2005-01-07 半導体装置 Expired - Fee Related JP4646636B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2005001979A JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置
TW094101903A TW200534469A (en) 2004-02-20 2005-01-21 Semiconductor device
US11/057,682 US7206216B2 (en) 2004-02-20 2005-02-15 Semiconductor device with a non-erasable memory and/or a nonvolatile memory
KR1020050013190A KR101109883B1 (ko) 2004-02-20 2005-02-17 반도체 장치
CNB2005100093026A CN100533596C (zh) 2004-02-20 2005-02-18 半导体器件
CN2009101513831A CN101587746B (zh) 2004-02-20 2005-02-18 半导体器件
US11/715,918 US7385838B2 (en) 2004-02-20 2007-03-09 Semiconductor device with a non-erasable memory and/or a nonvolatile memory
KR1020110062555A KR101149273B1 (ko) 2004-02-20 2011-06-27 반도체 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004043948 2004-02-20
JP2005001979A JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010224722A Division JP5135406B2 (ja) 2004-02-20 2010-10-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2005267837A JP2005267837A (ja) 2005-09-29
JP2005267837A5 JP2005267837A5 (enExample) 2008-02-14
JP4646636B2 true JP4646636B2 (ja) 2011-03-09

Family

ID=34863502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005001979A Expired - Fee Related JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置

Country Status (5)

Country Link
US (2) US7206216B2 (enExample)
JP (1) JP4646636B2 (enExample)
KR (2) KR101109883B1 (enExample)
CN (2) CN101587746B (enExample)
TW (1) TW200534469A (enExample)

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Also Published As

Publication number Publication date
CN101587746A (zh) 2009-11-25
KR101149273B1 (ko) 2012-05-25
US20070159871A1 (en) 2007-07-12
TW200534469A (en) 2005-10-16
KR20110090861A (ko) 2011-08-10
JP2005267837A (ja) 2005-09-29
KR20060042055A (ko) 2006-05-12
CN101587746B (zh) 2011-01-26
US7206216B2 (en) 2007-04-17
US20050185445A1 (en) 2005-08-25
CN1658328A (zh) 2005-08-24
KR101109883B1 (ko) 2012-03-13
US7385838B2 (en) 2008-06-10
CN100533596C (zh) 2009-08-26
TWI359491B (enExample) 2012-03-01

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