TWI359491B - - Google Patents

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Publication number
TWI359491B
TWI359491B TW094101903A TW94101903A TWI359491B TW I359491 B TWI359491 B TW I359491B TW 094101903 A TW094101903 A TW 094101903A TW 94101903 A TW94101903 A TW 94101903A TW I359491 B TWI359491 B TW I359491B
Authority
TW
Taiwan
Prior art keywords
memory
semiconductor device
node
lines
information
Prior art date
Application number
TW094101903A
Other languages
English (en)
Chinese (zh)
Other versions
TW200534469A (en
Inventor
Kenichi Osada
Riichiro Takemura
Norikatsu Takaura
Nozomu Matsuzaki
Takayuki Kawahara
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200534469A publication Critical patent/TW200534469A/zh
Application granted granted Critical
Publication of TWI359491B publication Critical patent/TWI359491B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
TW094101903A 2004-02-20 2005-01-21 Semiconductor device TW200534469A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004043948 2004-02-20
JP2005001979A JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置

Publications (2)

Publication Number Publication Date
TW200534469A TW200534469A (en) 2005-10-16
TWI359491B true TWI359491B (enExample) 2012-03-01

Family

ID=34863502

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094101903A TW200534469A (en) 2004-02-20 2005-01-21 Semiconductor device

Country Status (5)

Country Link
US (2) US7206216B2 (enExample)
JP (1) JP4646636B2 (enExample)
KR (2) KR101109883B1 (enExample)
CN (2) CN101587746B (enExample)
TW (1) TW200534469A (enExample)

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Also Published As

Publication number Publication date
CN101587746A (zh) 2009-11-25
JP4646636B2 (ja) 2011-03-09
KR101149273B1 (ko) 2012-05-25
US20070159871A1 (en) 2007-07-12
TW200534469A (en) 2005-10-16
KR20110090861A (ko) 2011-08-10
JP2005267837A (ja) 2005-09-29
KR20060042055A (ko) 2006-05-12
CN101587746B (zh) 2011-01-26
US7206216B2 (en) 2007-04-17
US20050185445A1 (en) 2005-08-25
CN1658328A (zh) 2005-08-24
KR101109883B1 (ko) 2012-03-13
US7385838B2 (en) 2008-06-10
CN100533596C (zh) 2009-08-26

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